TY - GEN
A1 - Niu, Gang
A1 - Capellini, Giovanni
A1 - Lupina, Grzegorz
A1 - Niermann, Tore
A1 - Salvalaglio, Marco
A1 - Marzegalli, Anna
A1 - Schubert, Markus Andreas
A1 - Zaumseil, Peter
A1 - Krause, Hans-Michael
A1 - Skibitzki, Oliver
A1 - Lehmann, Michael
A1 - Montalenti, Francesco
A1 - Xie, Ya-Hong
A1 - Schröder, Thomas
T1 - Photodetection in hybrid single layer graphene/fully coherent Ge island nanostructures selectively grown on Si nano-tip patterns
T2 - ACS Applied Materials and Interfaces
Y1 - 2016
SN - 1944-8252
VL - 8
IS - 3
SP - 2017
EP - 2026
ER -
TY - GEN
A1 - Niu, Gang
A1 - Capellini, Giovanni
A1 - Schubert, Markus Andreas
A1 - Niermann, Tore
A1 - Zaumseil, Peter
A1 - Katzer, Jens
A1 - Krause, Hans-Michael
A1 - Skibitzki, Oliver
A1 - Lehmann, Michael
A1 - Xie, Ya-Hong
A1 - Känel, Hans von
A1 - Schröder, Thomas
T1 - Dislocation-free Ge nano-crystals via pattern dependent selective Ge heteroepitaxy on Si nano-tip wafers
T2 - Scientific Reports
Y1 - 2016
U6 - https://doi.org/10.1038/srep22709
SN - 2045-2322
VL - 6
SP - 22709
ER -
TY - GEN
A1 - Niu, Gang
A1 - Capellini, Giovanni
A1 - Hatami, Fariba
A1 - Bartolomeo, Antonio di
A1 - Niermann, Tore
A1 - Hameed, Hussein Emad
A1 - Schubert, Markus Andreas
A1 - Krause, Hans-Michael
A1 - Zaumseil, Peter
A1 - Skibitzki, Oliver
A1 - Masselink, William T.
A1 - Lehmann, Michael
A1 - Xie, Ya-Hong
A1 - Schröder, Thomas
T1 - Selective Epitaxy of InP on Si and Rectification in Graphene/InP/Si Hybrid Structure
T2 - ACS Applied Materials and Interfaces
Y1 - 2016
U6 - https://doi.org/10.1021/acsami.6b09592
SN - 1944-8244
SN - 1944-8252
VL - 8
IS - 40
SP - 26948
EP - 26955
ER -
TY - RPRT
A1 - Hollweg, Heinz-Dieter
A1 - Böhm, Uwe
A1 - Fast, Irina
A1 - Hennemuth, Barbara
A1 - Keuler, Klaus
A1 - Keup-Thiel, Elke
A1 - Lautenschlager, Michael
A1 - Legutke, Stephanie
A1 - Radtke, Kai
A1 - Rockel, Burkhardt
A1 - Schubert, Martina
A1 - Will, Andreas
A1 - Woldt, Michael
A1 - Wunram, Claudia
T1 - Ensemble Simulations over Europe with the Regional Climate Model CLM forced with IPCC AR4 Global Scenarios
N2 - Regional climate projections have been performed for Europe with the climate version CLM (version 3.1) of the 'Lokal-Modell' (LM) of the German Meteorological Service. CLM has been forced with output of the ECHAM5/MPIOM global climate model of the Max Planck Institute for Meteorology, which contributed to the fourth climate assessment report (AR4) of the International Panel on Climate Change (IPCC). The results of the global model for the IPCC A1B and B1 scenarios as well as the reconstruction of the last four decades of the 20th century (20C3M) for the AR4 are dynamically scaled down to the CLM grid cell size of about 18×18 km2. Climatological parameters including all model variables and additional quantities characterising the climate are available from the World Data Centre for Climate database run by the German climate service group Model and Data. They can be accessed by the general public at no costs with the help of M and D. In particular, the 'Service Group Adaptation' (SGA) has been established at M and D to assist adaptation projects funded by the German Federal Ministry of Education and Research (BMBF) giving advice on the interpretation of the CLM model results.
Y1 - 2008
UR - https://cera-www.dkrz.de/WDCC/ui/cerasearch/entry?acronym=MaD_TeReport_No03
U6 - https://doi.org/10.2312/WDCC/MaD_TeReport_No03
PB - Max-Planck-Institut für Meteorologie
CY - Hamburg
ER -
TY - GEN
A1 - Lukosius, Mindaugas
A1 - Dabrowski, Jarek Marek
A1 - Lisker, Marco
A1 - Kitzmann, Julia
A1 - Schulze, Sebastian
A1 - Lippert, Gunther
A1 - Fursenko, Oksana
A1 - Yamamoto, Yuji
A1 - Schubert, Markus Andreas
A1 - Krause, Hans-Michael
A1 - Wolff, Andre
A1 - Mai, A.
A1 - Schröder, Thomas
A1 - Lupina, Grzegorz
T1 - Metal-free, CVD Graphene synthesis on 200 mm Ge / Si(001) substrates
T2 - ACS Applied Materials and Interfaces
Y1 - 2016
U6 - https://doi.org/10.1021/acsami.6b11397
SN - 1944-8244
SN - 1944-8252
VL - 8
IS - 49
SP - 33786
EP - 33793
ER -
TY - GEN
A1 - Schlykow, Viktoria
A1 - Manganelli, Constanza Lucia
A1 - Römer, Friedhard
A1 - Clausen, Caterina J.
A1 - Augel, Lion
A1 - Schulze, Jörg
A1 - Katzer, Jens
A1 - Schubert, Michael Andreas
A1 - Witzigmann, Bernd
A1 - Schroeder, Thomas
A1 - Capellini, Giovanni
A1 - Fischer, Inga Anita
T1 - Ge(Sn) nano-island/Si heterostructure photodetectors with plasmonic antennas
T2 - Nanotechnology
Y1 - 2020
U6 - https://doi.org/10.1088/1361-6528/ab91ef
SN - 1361-6528
VL - 31
IS - 34
ER -
TY - GEN
A1 - Weißhaupt, David
A1 - Sürgers, Christoph
A1 - Bloos, Dominik
A1 - Funk, Hannes Simon
A1 - Oehme, Michael
A1 - Fischer, Gerda
A1 - Schubert, Markus Andreas
A1 - Wenger, Christian
A1 - van Slageren, Joris
A1 - Fischer, Inga Anita
A1 - Schulze, Jörg
T1 - Lateral Mn5Ge3 spin-valve in contact with a high-mobility Ge two-dimensional hole gas
T2 - Semiconductor Science and Technology
N2 - Abstract
Ge two-dimensional hole gases (2DHG) in strained modulation-doped quantum-wells represent a promising material platform for future spintronic applications due to their excellent spin transport properties and the theoretical possibility of efficient spin manipulation. Due to the continuous development of epitaxial growth recipes extreme high hole mobilities and low effective masses can be achieved, promising an efficient spin transport. Furthermore, the Ge 2DHG can be integrated in the well-established industrial complementary metal-oxide-semiconductor (CMOS) devices technology. However, efficient electrical spin injection into a Ge 2DHG—an essential prerequisite for the realization of spintronic devices—has not yet been demonstrated. In this work, we report the fabrication and low-temperature magnetoresistance (MR) measurements of a laterally structured Mn5Ge3/Ge 2DHG/ Mn5Ge3 device. The ferromagnetic Mn5Ge3 contacts are grown directly into the Ge quantum well by means of an interdiffusion process with a spacing of approximately 130 nm, forming a direct electrical contact between the ferromagnetic metal and the Ge 2DHG. Here, we report for the first time a clear MR signal for temperatures below 13 K possibly arising from successful spin injection into the high mobility Ge 2DHG. The results represent a step forward toward the realization of CMOS compatible spintronic devices based on a 2DHG.
KW - two-dimensional hole gas
Y1 - 2024
U6 - https://doi.org/10.1088/1361-6641/ad8d06
SN - 0268-1242
VL - 39
IS - 12
SP - 1
EP - 10
PB - IOP Publishing
ER -