TY - GEN A1 - Pérez-Bosch Quesada, Emilio A1 - Romero-Zaliz, Rocío A1 - Perez, Eduardo A1 - Mahadevaiah, Mamathamba Kalishettyhalli A1 - Reuben, John A1 - Schubert, Markus Andreas A1 - Jiménez-Molinos, Francisco A1 - Roldán, Juan Bautista A1 - Wenger, Christian T1 - Toward Reliable Compact Modeling of Multilevel 1T-1R RRAM Devices for Neuromorphic Systems T2 - Electronics (MDPI) N2 - In this work, three different RRAM compact models implemented in Verilog-A are analyzed and evaluated in order to reproduce the multilevel approach based on the switching capability of experimental devices. These models are integrated in 1T-1R cells to control their analog behavior by means of the compliance current imposed by the NMOS select transistor. Four different resistance levels are simulated and assessed with experimental verification to account for their multilevel capability. Further, an Artificial Neural Network study is carried out to evaluate in a real scenario the viability of the multilevel approach under study. KW - RRAM KW - multilevel switching KW - compact modeling KW - Verilog-A Y1 - 2021 U6 - https://doi.org/10.3390/electronics10060645 SN - 2079-9292 VL - 10 IS - 6 ER - TY - GEN A1 - Franck, Max A1 - Dabrowski, Jaroslaw A1 - Schubert, Markus Andreas A1 - Wenger, Christian A1 - Lukosius, Mindaugas T1 - Towards the Growth of Hexagonal Boron Nitride on Ge(001)/Si Substrates by Chemical Vapor Deposition T2 - Nanomaterials N2 - The growth of hexagonal boron nitride (hBN) on epitaxial Ge(001)/Si substrates via high-vacuum chemical vapor deposition from borazine is investigated for the first time in a systematic manner. The influences of the process pressure and growth temperature in the range of 10−7–10−3 mbar and 900–980 °C, respectively, are evaluated with respect to morphology, growth rate, and crystalline quality of the hBN films. At 900 °C, nanocrystalline hBN films with a lateral crystallite size of ~2–3 nm are obtained and confirmed by high-resolution transmission electron microscopy images. X-ray photoelectron spectroscopy confirms an atomic N:B ratio of 1 ± 0.1. A three-dimensional growth mode is observed by atomic force microscopy. Increasing the process pressure in the reactor mainly affects the growth rate, with only slight effects on crystalline quality and none on the principle growth mode. Growth of hBN at 980 °C increases the average crystallite size and leads to the formation of 3–10 well-oriented, vertically stacked layers of hBN on the Ge surface. Exploratory ab initio density functional theory simulations indicate that hBN edges are saturated by hydrogen, and it is proposed that partial de-saturation by H radicals produced on hot parts of the set-up is responsible for the growth KW - Boron nitride KW - 2d materials KW - Chemical vapour deposition Y1 - 2022 U6 - https://doi.org/10.3390/nano12193260 SN - 2079-4991 VL - 12 IS - 19 ER - TY - GEN A1 - Perez-Bosch Quesada, Emilio A1 - Rizzi, Tommaso A1 - Gupta, Aditya A1 - Mahadevaiah, Mamathamba Kalishettyhalli A1 - Schubert, Andreas A1 - Pechmann, Stefan A1 - Jia, Ruolan A1 - Uhlmann, Max A1 - Hagelauer, Amelie A1 - Wenger, Christian A1 - Perez, Eduardo T1 - Multi-Level Programming on Radiation-Hard 1T1R Memristive Devices for In-Memory Computing T2 - 14th Spanish Conference on Electron Devices (CDE 2023), Valencia, Spain, 06-08 June 2023 N2 - This work presents a quasi-static electrical characterization of 1-transistor-1-resistor memristive structures designed following hardness-by-design techniques integrated in the CMOS fabrication process to assure multi-level capabilities in harsh radiation environments. Modulating the gate voltage of the enclosed layout transistor connected in series with the memristive device, it was possible to achieve excellent switching capabilities from a single high resistance state to a total of eight different low resistance states (more than 3 bits). Thus, the fabricated devices are suitable for their integration in larger in-memory computing systems and in multi-level memory applications. Index Terms—radiation-hard, hardness-by-design, memristive devices, Enclosed Layout Transistor, in-memory computing KW - RRAM Y1 - 2023 SN - 979-8-3503-0240-0 U6 - https://doi.org/10.1109/CDE58627.2023.10339525 PB - Institute of Electrical and Electronics Engineers (IEEE) ER - TY - GEN A1 - Schlykow, Viktoria A1 - Manganelli, Constanza Lucia A1 - Römer, Friedhard A1 - Clausen, Caterina J. A1 - Augel, Lion A1 - Schulze, Jörg A1 - Katzer, Jens A1 - Schubert, Michael Andreas A1 - Witzigmann, Bernd A1 - Schroeder, Thomas A1 - Capellini, Giovanni A1 - Fischer, Inga Anita T1 - Ge(Sn) nano-island/Si heterostructure photodetectors with plasmonic antennas T2 - Nanotechnology Y1 - 2020 U6 - https://doi.org/10.1088/1361-6528/ab91ef SN - 1361-6528 VL - 31 IS - 34 ER - TY - GEN A1 - Zöllner, Marvin Hartwig A1 - Dabrowski, Jarek Marek A1 - Zaumseil, Peter A1 - Giussani, A. A1 - Schubert, Markus Andreas A1 - Lupina, Grzegorz A1 - Wilkens, Henrik A1 - Wollschläger, Joachim A1 - Bäumer, Marcus A1 - Reichling, M. A1 - Schröder, Thomas T1 - On the unusual stacking behavior of twin-free, type B oriented CeO2(111) films on hexagonal Pr2O3(0001) / Si(111) systems T2 - Physical Review Y1 - 2012 UR - http://link.aps.org/doi/10.1103/PhysRevB.85.035302 U6 - https://doi.org/10.1103/PhysRevB.85.035302 SN - 1098-0121 VL - 85 IS - 3 SP - 035302 EP - 035311 ER - TY - GEN A1 - Hayat, Ahsan A1 - Spirito, Davide A1 - Corley-Wiciak, Agnieszka Anna A1 - Schubert, Markus Andreas A1 - Masood, Maria A1 - Reichmann, Felix A1 - Ratzke, Markus A1 - Capellini, Giovanni A1 - Fischer, Inga Anita T1 - MBE-based growth of Sn-rich quantum wells and dots at low Sn deposition rates T2 - Materials Science in Semiconductor Processing Y1 - 2023 U6 - https://doi.org/10.1016/j.mssp.2023.107693 SN - 1873-4081 VL - 165 ER - TY - GEN A1 - Niu, Gang A1 - Zaumseil, Peter A1 - Schubert, Markus Andreas A1 - Zöllner, Marvin Hartwig A1 - Dabrowski, Jarek Marek A1 - Schroeder, Thomas T1 - Lattice-matched single crystalline ternary PrxY2-xO3 films on SrO-passivated Si (001): interface engineering and crystallography tailoring T2 - Applied Physics Letters Y1 - 2013 VL - 102 SP - 011906-1 EP - 011906-5 ER - TY - GEN A1 - Zaumseil, Peter A1 - Yamamoto, Yuji A1 - Bauer, Joachim A1 - Schubert, Markus Andreas A1 - Matejova, Jana A1 - Kozłowski, Grzegorz A1 - Schröder, Thomas A1 - Tillack, Bernd T1 - Preparation and Characterization of Ge Epitaxially Grown on Nano-structured Periodic Si Pillars and Bars on Si(001) Substrate T2 - Thin Solid Films Y1 - 2012 U6 - https://doi.org/10.1016/j.tsf.2011.10.178 SN - 0040-6090 VL - 520 IS - 8 SP - 3240 EP - 3244 ER - TY - GEN A1 - Kozłowski, Grzegorz A1 - Zaumseil, Peter A1 - Schubert, Markus Andreas A1 - Yamamoto, Yuji A1 - Schülli, Tobias U. A1 - Tillack, Bernd A1 - Schroeder, Thomas T1 - Growth and relaxation processes in Ge nanocrystals on free-standing Si(001) nanopillars T2 - Nanotechnology Y1 - 2012 U6 - https://doi.org/10.1088/0957-4484/23/11/115704 SN - 0957-4484 VL - 23 IS - 11 SP - 115704 EP - 115711 ER - TY - GEN A1 - Reiter, Sebastian A1 - Han, Weijia A1 - Mai, Christian A1 - Spirito, Davide A1 - Jose, Josmy A1 - Zöllner, Marvin Hartwig A1 - Fursenko, Oksana A1 - Schubert, Markus Andreas A1 - Stemmler, Ivo A1 - Wenger, Christian A1 - Fischer, Inga Anita T1 - Titanium Nitride Plasmonic Nanohole Arrays for CMOS-Compatible Integrated Refractive Index Sensing: Influence of Layer Thickness on Optical Properties T2 - Plasmonics Y1 - 2023 U6 - https://doi.org/10.1007/s11468-023-01810-3 SN - 1557-1963 SP - 1 EP - 13 ER -