TY - GEN
A1 - Mahadevaiah, Mamathamba Kalishettyhalli
A1 - Pérez, Eduardo
A1 - Lisker, Marco
A1 - Schubert, Markus Andreas
A1 - Perez-Bosch Quesada, Emilio
A1 - Wenger, Christian
A1 - Mai, Andreas
T1 - Modulating the Filamentary-Based Resistive Switching Properties of HfO2 Memristive Devices by Adding Al2O3 Layers
T2 - Electronics : open access journal
N2 - The resistive switching properties of HfO2 based 1T-1R memristive devices are electrically modified by adding ultra-thin layers of Al2O3
into the memristive device. Three different types of memristive stacks are fabricated in the 130 nm CMOS technology of IHP. The switching properties of the memristive devices are discussed with respect to forming voltages, low resistance state and high resistance state characteristics and their variabilities. The experimental I–V characteristics of set and reset operations are evaluated by using the quantum point contact model. The properties of the conduction filament in the on and off states of the memristive devices are discussed with respect to the model parameters obtained from the QPC fit.
KW - RRAM
KW - HfO2
KW - filamentary switching
Y1 - 2022
U6 - https://doi.org/10.3390/electronics11101540
SN - 2079-9292
VL - 11
IS - 10
ER -
TY - GEN
A1 - Seifarth, Olaf
A1 - Schubert, Markus Andreas
A1 - Giussani, A.
A1 - Klenov, D. O.
A1 - Schmeißer, Dieter
A1 - Schroeder, Thomas
T1 - Single crystalline Pr2-xYxO3 (x=0-2)dielectrics on Si with tailored electronic and crystallographic structure
KW - crystalline
KW - dielectric
KW - structure
Y1 - 2010
SN - 1089-7550
VL - 108
IS - 10
SP - 103709
ER -
TY - GEN
A1 - Zaumseil, Peter
A1 - Yamamoto, Yuji
A1 - Bauer, Joachim
A1 - Schubert, Markus Andreas
A1 - Matejova, Jana
A1 - Kozłowski, Grzegorz
A1 - Schröder, Thomas
A1 - Tillack, Bernd
T1 - Preparation and Characterization of Ge Epitaxially Grown on Nano-structured Periodic Si Pillars and Bars on Si(001) Substrate
T2 - Thin Solid Films
Y1 - 2012
U6 - https://doi.org/10.1016/j.tsf.2011.10.178
SN - 0040-6090
VL - 520
IS - 8
SP - 3240
EP - 3244
ER -
TY - GEN
A1 - Kozłowski, Grzegorz
A1 - Zaumseil, Peter
A1 - Schubert, Markus Andreas
A1 - Yamamoto, Yuji
A1 - Schülli, Tobias U.
A1 - Tillack, Bernd
A1 - Schroeder, Thomas
T1 - Growth and relaxation processes in Ge nanocrystals on free-standing Si(001) nanopillars
T2 - Nanotechnology
Y1 - 2012
U6 - https://doi.org/10.1088/0957-4484/23/11/115704
SN - 0957-4484
VL - 23
IS - 11
SP - 115704
EP - 115711
ER -
TY - GEN
A1 - Zöllner, Marvin Hartwig
A1 - Dabrowski, Jarek Marek
A1 - Zaumseil, Peter
A1 - Giussani, A.
A1 - Schubert, Markus Andreas
A1 - Lupina, Grzegorz
A1 - Wilkens, Henrik
A1 - Wollschläger, Joachim
A1 - Bäumer, Marcus
A1 - Reichling, M.
A1 - Schröder, Thomas
T1 - On the unusual stacking behavior of twin-free, type B oriented CeO2(111) films on hexagonal Pr2O3(0001) / Si(111) systems
T2 - Physical Review
Y1 - 2012
UR - http://link.aps.org/doi/10.1103/PhysRevB.85.035302
U6 - https://doi.org/10.1103/PhysRevB.85.035302
SN - 1098-0121
VL - 85
IS - 3
SP - 035302
EP - 035311
ER -
TY - GEN
A1 - Skibitzki, Oliver
A1 - Hatami, Fariba
A1 - Yamamoto, Yuji
A1 - Zaumseil, Peter
A1 - Trampert, A.
A1 - Schubert, Markus Andreas
A1 - Tillack, Bernd
A1 - Schroeder, Thomas
T1 - GaP collector development for SiGe HBT performance increase: A heterostructure growth study
T2 - Journal of Applied Physics
Y1 - 2012
U6 - https://doi.org/10.1063/1.3701583
SN - 0021-8979
VL - 111
IS - 7
SP - 073515
EP - 073515-9
ER -
TY - GEN
A1 - Tarnawska, Lidia Lupina
A1 - Zaumseil, Peter
A1 - Schubert, Markus Andreas
A1 - Okur, S.
A1 - Morkoc, H.
A1 - Paszkiewicz, R.
A1 - Storck, Peter
A1 - Schroeder, Thomas
T1 - Structural and optical quality of GaN on Sc2O3 / Y2O3 / Si(111)
T2 - Journal of Applied Physics
Y1 - 2012
U6 - https://doi.org/10.1063/1.3699201
SN - 0021-8979
VL - 111
IS - 7
SP - 073509
EP - 073509-4
ER -
TY - GEN
A1 - Zaumseil, Peter
A1 - Kozłowski, Grzegorz
A1 - Yamamoto, Yuji
A1 - Bauer, J.
A1 - Schubert, Markus Andreas
A1 - Schülli, Tobias U.
A1 - Tillack, Bernd
A1 - Schroeder, Thomas
T1 - Compliant Si nanostructures on SOI for Ge nanoheteroepitaxy – a case study for lattice mismatched semiconductor integration on Si(001)
T2 - Journal of Applied Physics
Y1 - 2012
SN - 0021-8979
VL - 112
IS - 4
SP - 043506
EP - 043511
ER -
TY - GEN
A1 - Zaumseil, Peter
A1 - Kozłowski, Grzegorz
A1 - Schubert, Markus Andreas
A1 - Yamamoto, Yuji
A1 - Bauer, J.
A1 - Schülli, Tobias U.
A1 - Tillack, Bernd
A1 - Schroeder, Thomas
T1 - The role of SiGe buffer in growth and relaxation of Ge on free-standing Si(001) nanopillars
T2 - Nanotechnology
Y1 - 2012
SN - 1361-6528
VL - 23
IS - 35
SP - 355706
ER -
TY - GEN
A1 - Bauer, J.
A1 - Yamamoto, Yuji
A1 - Zaumseil, Peter
A1 - Fursenko, Oksana
A1 - Schulz, K.
A1 - Kozłowski, Grzegorz
A1 - Schubert, Markus Andreas
A1 - Schroeder, Thomas
A1 - Tillack, Bernd
T1 - Nanostructured Silicon for Ge Nanoheteroepitaxy
T2 - Microelectronics Engineering
Y1 - 2012
SN - 0167-9317
VL - 97
SP - 169
EP - 172
ER -
TY - GEN
A1 - Sowinska, Małgorzata
A1 - Bertaud, Thomas
A1 - Walczyk, Damian
A1 - Thiess, Sebastian
A1 - Schubert, Markus Andreas
A1 - Lukosius, Mindaugas
A1 - Drube, W.
A1 - Walczyk, Christian
A1 - Schröder, Thomas
T1 - Hard X-ray Photoelectron Spectroscopy study of the electroforming in Ti/HfO2-based resistive switching structures
T2 - Applied Physics Letters
Y1 - 2012
SN - 0003-6951
VL - 100
IS - 23
SP - 233509
EP - 233514
ER -
TY - GEN
A1 - Zaumseil, Peter
A1 - Kozłowski, Grzegorz
A1 - Yamamoto, Yuji
A1 - Schubert, Markus Andreas
A1 - Schroeder, Thomas
T1 - X-ray Characterization of Ge Dots Epitaxially Grown on Nano-structured Si Islands on SOI Substrates
T2 - Journal of Applied Crystallography
Y1 - 2013
SN - 0021-8898
VL - 46
IS - 4
SP - 868
EP - 873
ER -
TY - GEN
A1 - Niu, Gang
A1 - Zaumseil, Peter
A1 - Schubert, Markus Andreas
A1 - Zöllner, Marvin Hartwig
A1 - Dabrowski, Jarek Marek
A1 - Schroeder, Thomas
T1 - Lattice-matched single crystalline ternary PrxY2-xO3 films on SrO-passivated Si (001): interface engineering and crystallography tailoring
T2 - Applied Physics Letters
Y1 - 2013
VL - 102
SP - 011906-1
EP - 011906-5
ER -
TY - GEN
A1 - Kleeberg, Andreas
A1 - Schubert, Hendrik
A1 - Koschorreck, Matthias
A1 - Nixdorf, Brigitte
T1 - Abundance and primary production of filamentous green algae Zygogonium ericetorum in an extremly acid (pH 2.9) mining lake and its impact on alkalinity generation
T2 - Freshwater Biology
KW - carbon
KW - Chlorophyta
Y1 - 2006
U6 - https://doi.org/10.1111/j.1365-2427.2006.01542.x
SN - 1365-2427
VL - 51
IS - 5
SP - 925
EP - 937
ER -
TY - CHAP
A1 - Kleeberg, Andreas
A1 - Schubert, Hendrik
A1 - Koschorreck, Matthias
A1 - Nixdorf, Brigitte
T1 - Biomasse und Primär-produktion der fädigen Grünalge Zygogonium ericetorum in einem extrem sauren (pH 2,9) Tagebausee und ihr Einfluss auf die biogene Alkalinitätsbildung
T2 - Erweiterte Zusammenfassung der Jahrestagung der DGL 2004 in Potsdam
KW - Tagebauseen
Y1 - 2005
SN - 3-89998-060-3
SP - 199
EP - 2003
PB - Weißensee Verlag
CY - Berlin
ER -
TY - GEN
A1 - Kleeberg, Andreas
A1 - Schubert, Hendrik
T1 - Vertical gradients in particle distribution and its elemental composition under oxic and anoxic conditions in a eutrophic lake, Scharmützelsee
T2 - Archiv für Hydrobiologie
KW - eutrophic lake
Y1 - 2000
SN - 0003-9136
VL - 148
IS - 2
SP - 187
EP - 207
ER -
TY - GEN
A1 - Zaumseil, Peter
A1 - Yamamoto, Yuji
A1 - Schubert, Markus Andreas
A1 - Schröder, Thomas
A1 - Tillack, Bernd
T1 - Heteroepitaxial Growth of Ge on compliant strained nano-structured Si lines and dots on (001) SOI substrates
T2 - Thin Solid Films
Y1 - 2014
SN - 0040-6090
VL - 557
SP - 50
EP - 54
ER -
TY - GEN
A1 - Kaletta, Udo Christian
A1 - Wipf, Christian
A1 - Fraschke, Mirko
A1 - Wolansky, Dirk
A1 - Schubert, Markus Andreas
A1 - Schroeder, Thomas
A1 - Wenger, Christian
T1 - AlN/SiO2/Si3N4/Si(100) based CMOS compatible surface acoustic wave filter with -12.8 dB minimum insertion loss
T2 - IEEE Transactions on Electron Devices
Y1 - 2015
U6 - https://doi.org/10.1109/TED.2015.2395443
SN - 0018-9383
VL - 62
IS - 3
SP - 764
EP - 768
ER -
TY - GEN
A1 - Niu, Gang
A1 - Capellini, Giovanni
A1 - Lupina, Grzegorz
A1 - Niermann, Tore
A1 - Salvalaglio, Marco
A1 - Marzegalli, Anna
A1 - Schubert, Markus Andreas
A1 - Zaumseil, Peter
A1 - Krause, Hans-Michael
A1 - Skibitzki, Oliver
A1 - Lehmann, Michael
A1 - Montalenti, Francesco
A1 - Xie, Ya-Hong
A1 - Schröder, Thomas
T1 - Photodetection in hybrid single layer graphene/fully coherent Ge island nanostructures selectively grown on Si nano-tip patterns
T2 - ACS Applied Materials and Interfaces
Y1 - 2016
SN - 1944-8252
VL - 8
IS - 3
SP - 2017
EP - 2026
ER -
TY - GEN
A1 - Zaumseil, Peter
A1 - Schubert, Markus Andreas
A1 - Yamamoto, Yuji
A1 - Skibitzki, Oliver
A1 - Capellini, Giovanni
A1 - Schröder, Thomas
T1 - Misfit dislocation-free epitaxial growth of SiGe on compliant nanostructured Silicon
T2 - Solid State Phenomena
Y1 - 2016
U6 - https://doi.org/10.4028/www.scientific.net/SSP.242.402
SN - 1662-9779
SN - 0377-6883
VL - 242
SP - 402
EP - 407
ER -
TY - GEN
A1 - Taoka, Noriyuki
A1 - Capellini, Giovanni
A1 - Driesch, Nils von den
A1 - Buca, Dan
A1 - Zaumseil, Peter
A1 - Schubert, Markus Andreas
A1 - Klesse, Wolfgang Matthias
A1 - Montanari, Michele
A1 - Schröder, Thomas
T1 - Sn Migration Control at High Temperature Due to High Deposition Speed for Forming High Quality GeSn Layer
T2 - Applied Physics Express
Y1 - 2016
U6 - https://doi.org/10.7567/APEX.9.031201
SN - 1882-0786
SN - 1882-0778
VL - 9
IS - 3
SP - 031201
ER -
TY - GEN
A1 - Niu, Gang
A1 - Capellini, Giovanni
A1 - Schubert, Markus Andreas
A1 - Niermann, Tore
A1 - Zaumseil, Peter
A1 - Katzer, Jens
A1 - Krause, Hans-Michael
A1 - Skibitzki, Oliver
A1 - Lehmann, Michael
A1 - Xie, Ya-Hong
A1 - Känel, Hans von
A1 - Schröder, Thomas
T1 - Dislocation-free Ge nano-crystals via pattern dependent selective Ge heteroepitaxy on Si nano-tip wafers
T2 - Scientific Reports
Y1 - 2016
U6 - https://doi.org/10.1038/srep22709
SN - 2045-2322
VL - 6
SP - 22709
ER -
TY - GEN
A1 - Niu, Gang
A1 - Capellini, Giovanni
A1 - Hatami, Fariba
A1 - Bartolomeo, Antonio di
A1 - Niermann, Tore
A1 - Hameed, Hussein Emad
A1 - Schubert, Markus Andreas
A1 - Krause, Hans-Michael
A1 - Zaumseil, Peter
A1 - Skibitzki, Oliver
A1 - Masselink, William T.
A1 - Lehmann, Michael
A1 - Xie, Ya-Hong
A1 - Schröder, Thomas
T1 - Selective Epitaxy of InP on Si and Rectification in Graphene/InP/Si Hybrid Structure
T2 - ACS Applied Materials and Interfaces
Y1 - 2016
U6 - https://doi.org/10.1021/acsami.6b09592
SN - 1944-8244
SN - 1944-8252
VL - 8
IS - 40
SP - 26948
EP - 26955
ER -
TY - GEN
A1 - Skibitzki, Oliver
A1 - Capellini, Giovanni
A1 - Yamamoto, Yuji
A1 - Zaumseil, Peter
A1 - Schubert, Markus Andreas
A1 - Schröder, Thomas
A1 - Ballabio, Andrea
A1 - Bergamaschini, Roberto
A1 - Salvalaglio, Marco
A1 - Miglio, Leo
A1 - Montalenti, Francesco
T1 - RP-CVD growth of isolated Ge crystals and suspended layers on micrometric Si pillars
T2 - ACS Applied Materials and Interfaces
Y1 - 2016
U6 - https://doi.org/10.1021/acsami.6b07694
SN - 1944-8244
SN - 1944-8252
VL - 8
IS - 39
SP - 26374
EP - 26380
ER -
TY - GEN
A1 - Schlykow, Viktoria
A1 - Klesse, Wolfgang Matthias
A1 - Niu, Gang
A1 - Taoka, Noriyuki
A1 - Yamamoto, Yuji
A1 - Skibitzki, Oliver
A1 - Barget, M. R.
A1 - Zaumseil, Peter
A1 - Känel, Hans von
A1 - Schubert, Markus Andreas
A1 - Capellini, Giovanni
A1 - Schroeder, Thomas
T1 - Selective growth of fully relaxed GeSn nano-islands by nanoheteroepitaxy on patterned Si(001)
T2 - Applied Physics Letters
Y1 - 2016
U6 - https://doi.org/10.1063/1.4967500
SN - 1077-3118
VL - 109
IS - 20
SP - 202102
ER -
TY - GEN
A1 - Lukosius, Mindaugas
A1 - Dabrowski, Jarek Marek
A1 - Lisker, Marco
A1 - Kitzmann, Julia
A1 - Schulze, Sebastian
A1 - Lippert, Gunther
A1 - Fursenko, Oksana
A1 - Yamamoto, Yuji
A1 - Schubert, Markus Andreas
A1 - Krause, Hans-Michael
A1 - Wolff, Andre
A1 - Mai, A.
A1 - Schröder, Thomas
A1 - Lupina, Grzegorz
T1 - Metal-free, CVD Graphene synthesis on 200 mm Ge / Si(001) substrates
T2 - ACS Applied Materials and Interfaces
Y1 - 2016
U6 - https://doi.org/10.1021/acsami.6b11397
SN - 1944-8244
SN - 1944-8252
VL - 8
IS - 49
SP - 33786
EP - 33793
ER -
TY - GEN
A1 - Grzela, Tomasz
A1 - Capellini, Giovanni
A1 - Koczorowski, Wojciech
A1 - Schubert, Markus Andreas
A1 - Czajka, Ryszard
A1 - Curson, Neil J.
A1 - Heidmann, Inga
A1 - Schmidt, Thomas
A1 - Falta, Jens
A1 - Schröder, Thomas
T1 - Growth and evolution of nickel – germanide nanonstructures on Ge(001)
T2 - Nanotechnology
Y1 - 2015
SN - 1361-6528
SN - 0957-4484
VL - 26
IS - 38
SP - 385701
ER -
TY - GEN
A1 - Schlykow, Viktoria
A1 - Manganelli, Constanza Lucia
A1 - Römer, Friedhard
A1 - Clausen, Caterina J.
A1 - Augel, Lion
A1 - Schulze, Jörg
A1 - Katzer, Jens
A1 - Schubert, Michael Andreas
A1 - Witzigmann, Bernd
A1 - Schroeder, Thomas
A1 - Capellini, Giovanni
A1 - Fischer, Inga Anita
T1 - Ge(Sn) nano-island/Si heterostructure photodetectors with plasmonic antennas
T2 - Nanotechnology
Y1 - 2020
U6 - https://doi.org/10.1088/1361-6528/ab91ef
SN - 1361-6528
VL - 31
IS - 34
ER -
TY - GEN
A1 - Morales, Carlos
A1 - Mahmoodinezhad, Ali
A1 - Schubert, Andreas Markus
A1 - Wenger, Christian
A1 - Henkel, Karsten
A1 - Flege, Jan Ingo
T1 - Functional ultra-thin oxide films deposited by atomic layer deposition on structured substrates
T2 - Verhandlungen der DPG - SurfaceScience21
N2 - In the last decades, atomic layer deposition (ALD) has gained prominence in the materials and surface science communities owing to its high potential for integration as a scalable process in microelectronics. ALD's largest strengths are its well-controlled layer-by-layer deposition and growth conformity on 3D structures. Yet, the ALD technique is also well known to lead to amorphous and defective, non-stoichiometric thin films, resulting in modified materials properties that may even preferentially be used in certain applications. To study these issues, we have developed an in-situ ALD reactor attached to an X-ray photoelectron spectroscopy (XPS) system, capable of switching between both pump and flow-type operation. This novel tool allows to cover the entire range of compounds and recipes used in ALD, thus clarifying the role of such defects at different deposition stages, growth conditions and film/substrate interfaces. To exemplify these sorts of studies, we show the deposition of Al2O3 5-10 nm films on nanostructured Si, and their use as substrates for functional CeOx ALD deposits.
KW - Atomic layer deposition
KW - sensors
KW - structured substrates
KW - in-situ X-ray photoelectron spectroscopy
Y1 - 2021
UR - https://www.dpg-verhandlungen.de/year/2021/conference/surfacescience/part/o/session/74/contribution/5
VL - 2021
PB - Deutsche Physikalische Gesellschaft e.V.
CY - Bad Honnef
ER -
TY - GEN
A1 - Pérez-Bosch Quesada, Emilio
A1 - Romero-Zaliz, Rocío
A1 - Pérez, Eduardo
A1 - Mahadevaiah, Mamathamba Kalishettyhalli
A1 - Reuben, John
A1 - Schubert, Markus Andreas
A1 - Jiménez-Molinos, Francisco
A1 - Roldán, Juan Bautista
A1 - Wenger, Christian
T1 - Toward Reliable Compact Modeling of Multilevel 1T-1R RRAM Devices for Neuromorphic Systems
T2 - Electronics (MDPI)
N2 - In this work, three different RRAM compact models implemented in Verilog-A are analyzed and evaluated in order to reproduce the multilevel approach based on the switching capability of
experimental devices. These models are integrated in 1T-1R cells to control their analog behavior by means of the compliance current imposed by the NMOS select transistor. Four different resistance
levels are simulated and assessed with experimental verification to account for their multilevel capability. Further, an Artificial Neural Network study is carried out to evaluate in a real scenario the viability of the multilevel approach under study.
KW - RRAM
KW - multilevel switching
KW - compact modeling
KW - Verilog-A
Y1 - 2021
U6 - https://doi.org/10.3390/electronics10060645
SN - 2079-9292
VL - 10
IS - 6
ER -
TY - RPRT
A1 - Hollweg, Heinz-Dieter
A1 - Böhm, Uwe
A1 - Fast, Irina
A1 - Hennemuth, Barbara
A1 - Keuler, Klaus
A1 - Keup-Thiel, Elke
A1 - Lautenschlager, Michael
A1 - Legutke, Stephanie
A1 - Radtke, Kai
A1 - Rockel, Burkhardt
A1 - Schubert, Martina
A1 - Will, Andreas
A1 - Woldt, Michael
A1 - Wunram, Claudia
T1 - Ensemble Simulations over Europe with the Regional Climate Model CLM forced with IPCC AR4 Global Scenarios
N2 - Regional climate projections have been performed for Europe with the climate version CLM (version 3.1) of the 'Lokal-Modell' (LM) of the German Meteorological Service. CLM has been forced with output of the ECHAM5/MPIOM global climate model of the Max Planck Institute for Meteorology, which contributed to the fourth climate assessment report (AR4) of the International Panel on Climate Change (IPCC). The results of the global model for the IPCC A1B and B1 scenarios as well as the reconstruction of the last four decades of the 20th century (20C3M) for the AR4 are dynamically scaled down to the CLM grid cell size of about 18×18 km2. Climatological parameters including all model variables and additional quantities characterising the climate are available from the World Data Centre for Climate database run by the German climate service group Model and Data. They can be accessed by the general public at no costs with the help of M and D. In particular, the 'Service Group Adaptation' (SGA) has been established at M and D to assist adaptation projects funded by the German Federal Ministry of Education and Research (BMBF) giving advice on the interpretation of the CLM model results.
Y1 - 2008
UR - https://cera-www.dkrz.de/WDCC/ui/cerasearch/entry?acronym=MaD_TeReport_No03
U6 - https://doi.org/10.2312/WDCC/MaD_TeReport_No03
PB - Max-Planck-Institut für Meteorologie
CY - Hamburg
ER -
TY - GEN
A1 - Franck, Max
A1 - Dabrowski, Jaroslaw
A1 - Schubert, Markus Andreas
A1 - Wenger, Christian
A1 - Lukosius, Mindaugas
T1 - Towards the Growth of Hexagonal Boron Nitride on Ge(001)/Si Substrates by Chemical Vapor Deposition
T2 - Nanomaterials
N2 - The growth of hexagonal boron nitride (hBN) on epitaxial Ge(001)/Si substrates via high-vacuum chemical vapor deposition from borazine is investigated for the first time in a systematic manner. The influences of the process pressure and growth temperature in the range of 10−7–10−3 mbar and 900–980 °C, respectively, are evaluated with respect to morphology, growth rate, and crystalline quality of the hBN films. At 900 °C, nanocrystalline hBN films with a lateral crystallite size of ~2–3 nm are obtained and confirmed by high-resolution transmission electron microscopy images. X-ray photoelectron spectroscopy confirms an atomic N:B ratio of 1 ± 0.1. A three-dimensional growth mode is observed by atomic force microscopy. Increasing the process pressure in the reactor mainly affects the growth rate, with only slight effects on crystalline quality and none on the principle growth mode. Growth of hBN at 980 °C increases the average crystallite size and leads to the formation of 3–10 well-oriented, vertically stacked layers of hBN on the Ge surface. Exploratory ab initio density functional theory simulations indicate that hBN edges are saturated by hydrogen, and it is proposed that partial de-saturation by H radicals produced on hot parts of the set-up is responsible for the growth
KW - Boron nitride
KW - 2d materials
KW - Chemical vapour deposition
Y1 - 2022
U6 - https://doi.org/10.3390/nano12193260
SN - 2079-4991
VL - 12
IS - 19
ER -
TY - GEN
A1 - Weißhaupt, David
A1 - Sürgers, Christoph
A1 - Bloos, Dominik
A1 - Funk, Hannes Simon
A1 - Oehme, Michael
A1 - Fischer, Gerda
A1 - Schubert, Markus Andreas
A1 - Wenger, Christian
A1 - van Slageren, Joris
A1 - Fischer, Inga Anita
A1 - Schulze, Jörg
T1 - Lateral Mn5Ge3 spin-valve in contact with a high-mobility Ge two-dimensional hole gas
T2 - Semiconductor Science and Technology
N2 - Abstract
Ge two-dimensional hole gases (2DHG) in strained modulation-doped quantum-wells represent a promising material platform for future spintronic applications due to their excellent spin transport properties and the theoretical possibility of efficient spin manipulation. Due to the continuous development of epitaxial growth recipes extreme high hole mobilities and low effective masses can be achieved, promising an efficient spin transport. Furthermore, the Ge 2DHG can be integrated in the well-established industrial complementary metal-oxide-semiconductor (CMOS) devices technology. However, efficient electrical spin injection into a Ge 2DHG—an essential prerequisite for the realization of spintronic devices—has not yet been demonstrated. In this work, we report the fabrication and low-temperature magnetoresistance (MR) measurements of a laterally structured Mn5Ge3/Ge 2DHG/ Mn5Ge3 device. The ferromagnetic Mn5Ge3 contacts are grown directly into the Ge quantum well by means of an interdiffusion process with a spacing of approximately 130 nm, forming a direct electrical contact between the ferromagnetic metal and the Ge 2DHG. Here, we report for the first time a clear MR signal for temperatures below 13 K possibly arising from successful spin injection into the high mobility Ge 2DHG. The results represent a step forward toward the realization of CMOS compatible spintronic devices based on a 2DHG.
KW - two-dimensional hole gas
Y1 - 2024
U6 - https://doi.org/10.1088/1361-6641/ad8d06
SN - 0268-1242
VL - 39
IS - 12
SP - 1
EP - 10
PB - IOP Publishing
ER -
TY - GEN
A1 - Hayat, Ahsan
A1 - Ratzke, Markus
A1 - Alvarado Chavarin, Carlos
A1 - Zöllner, Marvin Hartwig
A1 - Corley-Wiciak, Agnieszka Anna
A1 - Schubert, Markus Andreas
A1 - Wenger, Christian
A1 - Fischer, Inga Anita
T1 - Structural and morphological properties of CeO2 films deposited by radio frequency magnetron sputtering for back-end-of-line integration
T2 - Thin Solid Films
Y1 - 2024
U6 - https://doi.org/10.1016/j.tsf.2024.140547
SN - 0040-6090
VL - 807
ER -
TY - GEN
A1 - Fritscher, Markus
A1 - Uhlmann, Max
A1 - Ostrovskyy, Philip
A1 - Reiser, Daniel
A1 - Chen, Junchao
A1 - Schubert, Andreas
A1 - Schulze, Carsten
A1 - Kahmen, Gerhard
A1 - Fey, Dietmar
A1 - Reichenbach, Marc
A1 - Krstic, Milos
A1 - Wenger, Christian
T1 - Area-efficient digital design using RRAM-CMOS standard cells
T2 - 2024 IEEE Computer Society Annual Symposium on VLSI (ISVLSI)
N2 - Extending the scalability of digital integrated circuits through novel device concepts is an attractive option. Among these concepts, resistive random access memory (RRAM) devices allow fast and nonvolatile operation. However, building large memristive systems is still challenging since large analog circuits have to be designed and integrated. In this paper, we propose a novel solution - the implementation of digital standard cells by the means of RRAM devices. While this methodology is universal, with applications ranging from few-device-circuits to large macroblocks, we demonstrate it for a 2T2R-cell. The benefits of using RRAM devices are demonstrated by implementing a NAND standard cell merely consuming the area of two transistors. This cell is about 25 % smaller than the equivalent CMOS NAND in the same technology. We use these cells to implement a half adder, beating the area of the equivalent CMOS implementation using more sophisticates gates by 15 %. Lastly, we fully integrate this novel standard cell into a digital standard cell library and perform a synthesis and layout of a RISC-V CPU core.
KW - RRAM
Y1 - 2024
SN - 979-8-3503-5411-9
SN - 979-8-3503-5412-6
U6 - https://doi.org/10.1109/ISVLSI61997.2024.00026
SN - 2159-3477
VL - 18
SP - 81
EP - 87
PB - IEEE
ER -
TY - GEN
A1 - Reiter, Sebastian
A1 - Han, Weijia
A1 - Mai, Christian
A1 - Spirito, Davide
A1 - Jose, Josmy
A1 - Zöllner, Marvin Hartwig
A1 - Fursenko, Oksana
A1 - Schubert, Markus Andreas
A1 - Stemmler, Ivo
A1 - Wenger, Christian
A1 - Fischer, Inga Anita
T1 - Titanium Nitride Plasmonic Nanohole Arrays for CMOS-compatible integrated refractive index sensing: influence of layer thickness on optical properties
T2 - Plasmonics
Y1 - 2023
U6 - https://doi.org/10.1007/s11468-023-01810-3
SN - 1557-1963
SP - 1
EP - 13
ER -
TY - GEN
A1 - Hayat, Ahsan
A1 - Spirito, Davide
A1 - Corley-Wiciak, Agnieszka Anna
A1 - Schubert, Markus Andreas
A1 - Masood, Maria
A1 - Reichmann, Felix
A1 - Ratzke, Markus
A1 - Capellini, Giovanni
A1 - Fischer, Inga Anita
T1 - MBE-based growth of Sn-rich quantum wells and dots at low Sn deposition rates
T2 - Materials Science in Semiconductor Processing
Y1 - 2023
U6 - https://doi.org/10.1016/j.mssp.2023.107693
SN - 1873-4081
VL - 165
ER -
TY - GEN
A1 - Uhlmann, Max
A1 - Pérez-Bosch Quesada, Emilio
A1 - Fritscher, Markus
A1 - Pérez, Eduardo
A1 - Schubert, Markus Andreas
A1 - Reichenbach, Marc
A1 - Ostrovskyy, Philip
A1 - Wenger, Christian
A1 - Kahmen, Gerhard
T1 - One-Transistor-Multiple-RRAM Cells for Energy-Efficient In-Memory Computing
T2 - 21st IEEE Interregional NEWCAS Conference (NEWCAS)
N2 - The use of resistive random-access memory (RRAM) for in-memory computing (IMC) architectures has significantly improved the energy-efficiency of artificial neural networks (ANN) over the past years. Current RRAM-technologies are physically limited to a defined unambiguously distinguishable number of stable states and a maximum resistive value and are compatible with present complementary metal-oxide semiconductor (CMOS)-technologies. In this work, we improved the accuracy of current ANN models by using increased weight resolutions of memristive devices, combining two or more in-series RRAM cells, integrated in the back end of line (BEOL) of the CMOS process. Based on system level simulations, 1T2R devices were fabricated in IHP's 130nm SiGe:BiCMOS technology node, demonstrating an increased number of states. We achieved an increase in weight resolution from 3 bit in ITIR cells to 6.5 bit in our 1T2R cell. The experimental data of 1T2R devices gives indications for the performance and energy-efficiency improvement in ITNR arrays for ANN applications.
KW - RRAM
KW - In-Memory Computing
Y1 - 2023
SN - 979-8-3503-0024-6
SN - 979-8-3503-0025-3
U6 - https://doi.org/10.1109/NEWCAS57931.2023.10198073
SN - 2474-9672
SN - 2472-467X
PB - Institute of Electrical and Electronics Engineers (IEEE)
ER -
TY - GEN
A1 - Morales, Carlos
A1 - Mahmoodinezhad, Ali
A1 - Tschammer, Rudi
A1 - Kosto, Yuliia
A1 - Alvarado Chavarin, Carlos
A1 - Schubert, Markus Andreas
A1 - Wenger, Christian
A1 - Henkel, Karsten
A1 - Flege, Jan Ingo
T1 - Combination of Multiple Operando and In-Situ Characterization Techniques in a Single Cluster System for Atomic Layer Deposition: Unraveling the Early Stages of Growth of Ultrathin Al2O3 Films on Metallic Ti Substrates
T2 - Inorganics
N2 - This work presents a new ultra-high vacuum cluster tool to perform systematic studies of the early growth stages of atomic layer deposited (ALD) ultrathin films following a surface science approach. By combining operando (spectroscopic ellipsometry and quadrupole mass spectrometry) and in situ (X-ray photoelectron spectroscopy) characterization techniques, the cluster allows us to follow the evolution of substrate, film, and reaction intermediates as a function of the total number of ALD cycles, as well as perform a constant diagnosis and evaluation of the ALD process, detecting possible malfunctions that could affect the growth, reproducibility, and conclusions derived from data analysis. The homemade ALD reactor allows the use of multiple precursors and oxidants and its operation under pump and flow-type modes. To illustrate our experimental approach, we revisit the well-known thermal ALD growth of Al2O3 using trimethylaluminum and water. We deeply discuss the role of the metallic Ti thin film substrate at room temperature and 200 °C, highlighting the differences between the heterodeposition (<10 cycles) and the homodeposition (>10 cycles) growth regimes at both conditions. This surface science approach will benefit our understanding of the ALD process, paving the way toward more efficient and controllable manufacturing processes.
KW - Atomic layer deposition (ALD)
KW - in-situ
KW - operando
KW - X-ray photoelectron spectroscopy
KW - ellipsometry
KW - quadrupol mass spectrometry (QMS)
Y1 - 2023
U6 - https://doi.org/10.3390/inorganics11120477
SN - 2304-6740
VL - 11
IS - 12
ER -
TY - GEN
A1 - Perez-Bosch Quesada, Emilio
A1 - Rizzi, Tommaso
A1 - Gupta, Aditya
A1 - Mahadevaiah, Mamathamba Kalishettyhalli
A1 - Schubert, Andreas
A1 - Pechmann, Stefan
A1 - Jia, Ruolan
A1 - Uhlmann, Max
A1 - Hagelauer, Amelie
A1 - Wenger, Christian
A1 - Pérez, Eduardo
T1 - Multi-Level Programming on Radiation-Hard 1T1R Memristive Devices for In-Memory Computing
T2 - 14th Spanish Conference on Electron Devices (CDE 2023), Valencia, Spain, 06-08 June 2023
N2 - This work presents a quasi-static electrical characterization of 1-transistor-1-resistor memristive structures designed following hardness-by-design techniques integrated in the CMOS fabrication process to assure multi-level capabilities in harsh radiation environments. Modulating the gate voltage of the enclosed layout transistor connected in series with the memristive device, it was possible to achieve excellent switching capabilities from a single high resistance state to a total of eight different low resistance states (more than 3 bits). Thus, the fabricated devices are suitable for their integration in larger in-memory computing systems and in multi-level memory applications.
Index Terms—radiation-hard, hardness-by-design, memristive
devices, Enclosed Layout Transistor, in-memory computing
KW - RRAM
Y1 - 2023
SN - 979-8-3503-0240-0
U6 - https://doi.org/10.1109/CDE58627.2023.10339525
PB - Institute of Electrical and Electronics Engineers (IEEE)
ER -
TY - GEN
A1 - Franck, Max
A1 - Dabrowski, Jarek
A1 - Schubert, Markus Andreas
A1 - Vignaud, Dominique
A1 - Achehboune, Mohamed
A1 - Colomer, Jean‐François
A1 - Henrard, Luc
A1 - Wenger, Christian
A1 - Lukosius, Mindaugas
T1 - Investigating Impacts of Local Pressure and Temperature on CVD Growth of Hexagonal Boron Nitride on Ge(001)/Si
T2 - Advanced Materials Interfaces
N2 - AbstractThe chemical vapor deposition (CVD) growth of hexagonal boron nitride (hBN) on Ge substrates is a promising pathway to high‐quality hBN thin films without metal contaminations for microelectronic applications, but the effect of CVD process parameters on the hBN properties is not well understood yet. The influence of local changes in pressure and temperature due to different reactor configurations on the structure and quality of hBN films grown on Ge(001)/Si is studied. Injection of the borazine precursor close to the sample surface results in an inhomogeneous film thickness, attributed to an inhomogeneous pressure distribution at the surface, as shown by computational fluid dynamics simulations. The additional formation of nanocrystalline islands is attributed to unfavorable gas phase reactions due to the radiative heating of the injector. Both issues are mitigated by increasing the injector‐sample distance, leading to an 86% reduction in pressure variability on the sample surface and a 200 °C reduction in precursor temperature. The resulting hBN films exhibit no nanocrystalline islands, improved thickness homogeneity, and high crystalline quality (Raman FWHM = 23 cm−1). This is competitive with hBN films grown on other non‐metal substrates but achieved at lower temperature and with a low thickness of only a few nanometers.
KW - Boron Nitride
KW - 2D material
Y1 - 2025
U6 - https://doi.org/10.1002/admi.202400467
SN - 2196-7350
VL - 12
IS - 1
PB - Wiley
ER -
TY - GEN
A1 - Morales, Carlos
A1 - Gertig, Max
A1 - Kot, Małgorzata
A1 - Alvarado, Carlos
A1 - Schubert, Markus Andreas
A1 - Zoellner, Marvin Hartwig
A1 - Wenger, Christian
A1 - Henkel, Karsten
A1 - Flege, Jan Ingo
T1 - In situ X‐ray photoelectron spectroscopy study of atomic layer deposited cerium oxide on SiO₂ : substrate influence on the reaction mechanism during the early stages of growth
T2 - Advanced materials interfaces
N2 - Thermal atomic layer deposition (ALD) of cerium oxide using commercial Ce(thd)4 precursor and O3 on SiO2 substrates is studied employing in‐situ X‐ray photoelectron spectroscopy (XPS). The system presents a complex growth behavior determined by the change in the reaction mechanism when the precursor interacts with the substrate or the cerium oxide surface. During the first growth stage, non‐ALD side reactions promoted by the substrate affect the growth per cycle, the amount of carbon residue on the surface, and the oxidation degree of cerium oxide. On the contrary, the second growth stage is characterized by a constant growth per cycle in good agreement with the literature, low carbon residues, and almost fully oxidized cerium oxide films. This distinction between two growth regimes is not unique to the CeOx/SiO2 system but can be generalized to other metal oxide substrates. Furthermore, the film growth deviates from the ideal layer‐by‐layer mode, forming micrometric inhomogeneous and defective flakes that eventually coalesce for deposit thicknesses above 10 nm. The ALD‐cerium oxide films present less order and a higher density of defects than films grown by physical vapor deposition techniques, likely affecting their reactivity in oxidizing and reducing conditions.
KW - Atomic Layer Deposition (ALD)
KW - Cerium oxide
KW - In-situ X-ray Photoelectron spectroscopy (in-situ XPS)
KW - Growth model
KW - Substrate influence
Y1 - 2025
U6 - https://doi.org/10.1002/admi.202400537
SN - 2196-7350
VL - 12
IS - 5
SP - 1
EP - 13
PB - Wiley
CY - Weinheim
ER -
TY - GEN
A1 - Kalra, Amanpreet
A1 - Alvarado Chavarin, Carlos
A1 - Nitsch, Paul-Gregor
A1 - Tschammer, Rudi
A1 - Flege, Jan Ingo
A1 - Ratzke, Markus
A1 - Zoellner, Marvin Hartwig
A1 - Schubert, Markus Andreas
A1 - Wenger, Christian
A1 - Fischer, Inga Anita
T1 - Deposition of CeOₓ/SnOₓ-based thin films via RF magnetron sputtering for resistive gas sensing applications
T2 - Physica B, Condensed matter
N2 - Cerium oxide-tin oxide (CeOx/SnOx) thin films with varying Sn content were deposited using RF magnetron sputtering and investigated for hydrogen sensing applications. Structural, compositional, and morphological properties were characterized using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), transmission electron microscopy (TEM), and energy-dispersive X-ray spectroscopy (EDX). Gas sensing measurements showed effective hydrogen detection at room temperature, with the sensitivity strongly influenced by Sn content and oxygen vacancy concentration. Higher Sn concentration enhanced the sensing response, which was correlated with microstructural features obtained from AFM and EDX, as well as with the presence of Ce3+ and Ce4+ oxidation states identified by XPS. This study highlights the potential of CeOx/SnOx thin films for possible back-end-of-line integration and provides proof-of-principle for room-temperature hydrogen sensing.
KW - RF magnetron sputtering
KW - CeOx/SnOx thin film
KW - Room temperature
KW - Hydrogen sensing
Y1 - 2026
U6 - https://doi.org/10.1016/j.physb.2025.418098
SN - 0921-4526
VL - 723
SP - 1
EP - 7
PB - Elsevier BV
CY - Amsterdam
ER -