TY - GEN A1 - Hayat, Ahsan A1 - Ratzke, Markus A1 - Alvarado Chavarin, Carlos A1 - Zöllner, Marvin Hartwig A1 - Corley-Wiciak, Agnieszka Anna A1 - Schubert, Markus Andreas A1 - Wenger, Christian A1 - Fischer, Inga Anita T1 - Structural and morphological properties of CeO2 films deposited by radio frequency magnetron sputtering for back-end-of-line integration T2 - Thin Solid Films Y1 - 2024 U6 - https://doi.org/10.1016/j.tsf.2024.140547 SN - 0040-6090 VL - 807 ER - TY - GEN A1 - Hayat, Ahsan A1 - Spirito, Davide A1 - Corley-Wiciak, Agnieszka Anna A1 - Schubert, Markus Andreas A1 - Masood, Maria A1 - Reichmann, Felix A1 - Ratzke, Markus A1 - Capellini, Giovanni A1 - Fischer, Inga Anita T1 - MBE-based growth of Sn-rich quantum wells and dots at low Sn deposition rates T2 - Materials Science in Semiconductor Processing Y1 - 2023 U6 - https://doi.org/10.1016/j.mssp.2023.107693 SN - 1873-4081 VL - 165 ER - TY - GEN A1 - Uhlmann, Max A1 - Pérez-Bosch Quesada, Emilio A1 - Fritscher, Markus A1 - Pérez, Eduardo A1 - Schubert, Markus Andreas A1 - Reichenbach, Marc A1 - Ostrovskyy, Philip A1 - Wenger, Christian A1 - Kahmen, Gerhard T1 - One-Transistor-Multiple-RRAM Cells for Energy-Efficient In-Memory Computing T2 - 21st IEEE Interregional NEWCAS Conference (NEWCAS) N2 - The use of resistive random-access memory (RRAM) for in-memory computing (IMC) architectures has significantly improved the energy-efficiency of artificial neural networks (ANN) over the past years. Current RRAM-technologies are physically limited to a defined unambiguously distinguishable number of stable states and a maximum resistive value and are compatible with present complementary metal-oxide semiconductor (CMOS)-technologies. In this work, we improved the accuracy of current ANN models by using increased weight resolutions of memristive devices, combining two or more in-series RRAM cells, integrated in the back end of line (BEOL) of the CMOS process. Based on system level simulations, 1T2R devices were fabricated in IHP's 130nm SiGe:BiCMOS technology node, demonstrating an increased number of states. We achieved an increase in weight resolution from 3 bit in ITIR cells to 6.5 bit in our 1T2R cell. The experimental data of 1T2R devices gives indications for the performance and energy-efficiency improvement in ITNR arrays for ANN applications. KW - RRAM KW - In-Memory Computing Y1 - 2023 SN - 979-8-3503-0024-6 SN - 979-8-3503-0025-3 U6 - https://doi.org/10.1109/NEWCAS57931.2023.10198073 SN - 2474-9672 SN - 2472-467X PB - Institute of Electrical and Electronics Engineers (IEEE) ER - TY - GEN A1 - Kalra, Amanpreet A1 - Alvarado Chavarin, Carlos A1 - Nitsch, Paul-Gregor A1 - Tschammer, Rudi A1 - Flege, Jan Ingo A1 - Ratzke, Markus A1 - Zoellner, Marvin Hartwig A1 - Schubert, Markus Andreas A1 - Wenger, Christian A1 - Fischer, Inga Anita T1 - Deposition of CeOₓ/SnOₓ-based thin films via RF magnetron sputtering for resistive gas sensing applications T2 - Physica B, Condensed matter N2 - Cerium oxide-tin oxide (CeOx/SnOx) thin films with varying Sn content were deposited using RF magnetron sputtering and investigated for hydrogen sensing applications. Structural, compositional, and morphological properties were characterized using X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), transmission electron microscopy (TEM), and energy-dispersive X-ray spectroscopy (EDX). Gas sensing measurements showed effective hydrogen detection at room temperature, with the sensitivity strongly influenced by Sn content and oxygen vacancy concentration. Higher Sn concentration enhanced the sensing response, which was correlated with microstructural features obtained from AFM and EDX, as well as with the presence of Ce3+ and Ce4+ oxidation states identified by XPS. This study highlights the potential of CeOx/SnOx thin films for possible back-end-of-line integration and provides proof-of-principle for room-temperature hydrogen sensing. KW - RF magnetron sputtering KW - CeOx/SnOx thin film KW - Room temperature KW - Hydrogen sensing Y1 - 2026 U6 - https://doi.org/10.1016/j.physb.2025.418098 SN - 0921-4526 VL - 723 SP - 1 EP - 7 PB - Elsevier BV CY - Amsterdam ER - TY - GEN A1 - Mahadevaiah, Mamathamba Kalishettyhalli A1 - Pérez, Eduardo A1 - Lisker, Marco A1 - Schubert, Markus Andreas A1 - Perez-Bosch Quesada, Emilio A1 - Wenger, Christian A1 - Mai, Andreas T1 - Modulating the Filamentary-Based Resistive Switching Properties of HfO2 Memristive Devices by Adding Al2O3 Layers T2 - Electronics : open access journal N2 - The resistive switching properties of HfO2 based 1T-1R memristive devices are electrically modified by adding ultra-thin layers of Al2O3 into the memristive device. Three different types of memristive stacks are fabricated in the 130 nm CMOS technology of IHP. The switching properties of the memristive devices are discussed with respect to forming voltages, low resistance state and high resistance state characteristics and their variabilities. The experimental I–V characteristics of set and reset operations are evaluated by using the quantum point contact model. The properties of the conduction filament in the on and off states of the memristive devices are discussed with respect to the model parameters obtained from the QPC fit. KW - RRAM KW - HfO2 KW - filamentary switching Y1 - 2022 U6 - https://doi.org/10.3390/electronics11101540 SN - 2079-9292 VL - 11 IS - 10 ER - TY - GEN A1 - Seifarth, Olaf A1 - Schubert, Markus Andreas A1 - Giussani, A. A1 - Klenov, D. O. A1 - Schmeißer, Dieter A1 - Schroeder, Thomas T1 - Single crystalline Pr2-xYxO3 (x=0-2)dielectrics on Si with tailored electronic and crystallographic structure KW - crystalline KW - dielectric KW - structure Y1 - 2010 SN - 1089-7550 VL - 108 IS - 10 SP - 103709 ER - TY - GEN A1 - Zaumseil, Peter A1 - Yamamoto, Yuji A1 - Bauer, Joachim A1 - Schubert, Markus Andreas A1 - Matejova, Jana A1 - Kozłowski, Grzegorz A1 - Schröder, Thomas A1 - Tillack, Bernd T1 - Preparation and Characterization of Ge Epitaxially Grown on Nano-structured Periodic Si Pillars and Bars on Si(001) Substrate T2 - Thin Solid Films Y1 - 2012 U6 - https://doi.org/10.1016/j.tsf.2011.10.178 SN - 0040-6090 VL - 520 IS - 8 SP - 3240 EP - 3244 ER - TY - GEN A1 - Kozłowski, Grzegorz A1 - Zaumseil, Peter A1 - Schubert, Markus Andreas A1 - Yamamoto, Yuji A1 - Schülli, Tobias U. A1 - Tillack, Bernd A1 - Schroeder, Thomas T1 - Growth and relaxation processes in Ge nanocrystals on free-standing Si(001) nanopillars T2 - Nanotechnology Y1 - 2012 U6 - https://doi.org/10.1088/0957-4484/23/11/115704 SN - 0957-4484 VL - 23 IS - 11 SP - 115704 EP - 115711 ER - TY - GEN A1 - Zöllner, Marvin Hartwig A1 - Dabrowski, Jarek Marek A1 - Zaumseil, Peter A1 - Giussani, A. A1 - Schubert, Markus Andreas A1 - Lupina, Grzegorz A1 - Wilkens, Henrik A1 - Wollschläger, Joachim A1 - Bäumer, Marcus A1 - Reichling, M. A1 - Schröder, Thomas T1 - On the unusual stacking behavior of twin-free, type B oriented CeO2(111) films on hexagonal Pr2O3(0001) / Si(111) systems T2 - Physical Review Y1 - 2012 UR - http://link.aps.org/doi/10.1103/PhysRevB.85.035302 U6 - https://doi.org/10.1103/PhysRevB.85.035302 SN - 1098-0121 VL - 85 IS - 3 SP - 035302 EP - 035311 ER - TY - GEN A1 - Skibitzki, Oliver A1 - Hatami, Fariba A1 - Yamamoto, Yuji A1 - Zaumseil, Peter A1 - Trampert, A. A1 - Schubert, Markus Andreas A1 - Tillack, Bernd A1 - Schroeder, Thomas T1 - GaP collector development for SiGe HBT performance increase: A heterostructure growth study T2 - Journal of Applied Physics Y1 - 2012 U6 - https://doi.org/10.1063/1.3701583 SN - 0021-8979 VL - 111 IS - 7 SP - 073515 EP - 073515-9 ER - TY - GEN A1 - Tarnawska, Lidia Lupina A1 - Zaumseil, Peter A1 - Schubert, Markus Andreas A1 - Okur, S. A1 - Morkoc, H. A1 - Paszkiewicz, R. A1 - Storck, Peter A1 - Schroeder, Thomas T1 - Structural and optical quality of GaN on Sc2O3 / Y2O3 / Si(111) T2 - Journal of Applied Physics Y1 - 2012 U6 - https://doi.org/10.1063/1.3699201 SN - 0021-8979 VL - 111 IS - 7 SP - 073509 EP - 073509-4 ER - TY - GEN A1 - Zaumseil, Peter A1 - Kozłowski, Grzegorz A1 - Yamamoto, Yuji A1 - Bauer, J. A1 - Schubert, Markus Andreas A1 - Schülli, Tobias U. A1 - Tillack, Bernd A1 - Schroeder, Thomas T1 - Compliant Si nanostructures on SOI for Ge nanoheteroepitaxy – a case study for lattice mismatched semiconductor integration on Si(001) T2 - Journal of Applied Physics Y1 - 2012 SN - 0021-8979 VL - 112 IS - 4 SP - 043506 EP - 043511 ER - TY - GEN A1 - Zaumseil, Peter A1 - Kozłowski, Grzegorz A1 - Schubert, Markus Andreas A1 - Yamamoto, Yuji A1 - Bauer, J. A1 - Schülli, Tobias U. A1 - Tillack, Bernd A1 - Schroeder, Thomas T1 - The role of SiGe buffer in growth and relaxation of Ge on free-standing Si(001) nanopillars T2 - Nanotechnology Y1 - 2012 SN - 1361-6528 VL - 23 IS - 35 SP - 355706 ER - TY - GEN A1 - Bauer, J. A1 - Yamamoto, Yuji A1 - Zaumseil, Peter A1 - Fursenko, Oksana A1 - Schulz, K. A1 - Kozłowski, Grzegorz A1 - Schubert, Markus Andreas A1 - Schroeder, Thomas A1 - Tillack, Bernd T1 - Nanostructured Silicon for Ge Nanoheteroepitaxy T2 - Microelectronics Engineering Y1 - 2012 SN - 0167-9317 VL - 97 SP - 169 EP - 172 ER - TY - GEN A1 - Sowinska, Małgorzata A1 - Bertaud, Thomas A1 - Walczyk, Damian A1 - Thiess, Sebastian A1 - Schubert, Markus Andreas A1 - Lukosius, Mindaugas A1 - Drube, W. A1 - Walczyk, Christian A1 - Schröder, Thomas T1 - Hard X-ray Photoelectron Spectroscopy study of the electroforming in Ti/HfO2-based resistive switching structures T2 - Applied Physics Letters Y1 - 2012 SN - 0003-6951 VL - 100 IS - 23 SP - 233509 EP - 233514 ER - TY - GEN A1 - Zaumseil, Peter A1 - Kozłowski, Grzegorz A1 - Yamamoto, Yuji A1 - Schubert, Markus Andreas A1 - Schroeder, Thomas T1 - X-ray Characterization of Ge Dots Epitaxially Grown on Nano-structured Si Islands on SOI Substrates T2 - Journal of Applied Crystallography Y1 - 2013 SN - 0021-8898 VL - 46 IS - 4 SP - 868 EP - 873 ER - TY - GEN A1 - Niu, Gang A1 - Zaumseil, Peter A1 - Schubert, Markus Andreas A1 - Zöllner, Marvin Hartwig A1 - Dabrowski, Jarek Marek A1 - Schroeder, Thomas T1 - Lattice-matched single crystalline ternary PrxY2-xO3 films on SrO-passivated Si (001): interface engineering and crystallography tailoring T2 - Applied Physics Letters Y1 - 2013 VL - 102 SP - 011906-1 EP - 011906-5 ER - TY - GEN A1 - Zaumseil, Peter A1 - Yamamoto, Yuji A1 - Schubert, Markus Andreas A1 - Schröder, Thomas A1 - Tillack, Bernd T1 - Heteroepitaxial Growth of Ge on compliant strained nano-structured Si lines and dots on (001) SOI substrates T2 - Thin Solid Films Y1 - 2014 SN - 0040-6090 VL - 557 SP - 50 EP - 54 ER - TY - GEN A1 - Kaletta, Udo Christian A1 - Wipf, Christian A1 - Fraschke, Mirko A1 - Wolansky, Dirk A1 - Schubert, Markus Andreas A1 - Schroeder, Thomas A1 - Wenger, Christian T1 - AlN/SiO2/Si3N4/Si(100) based CMOS compatible surface acoustic wave filter with -12.8 dB minimum insertion loss T2 - IEEE Transactions on Electron Devices Y1 - 2015 U6 - https://doi.org/10.1109/TED.2015.2395443 SN - 0018-9383 VL - 62 IS - 3 SP - 764 EP - 768 ER - TY - GEN A1 - Niu, Gang A1 - Capellini, Giovanni A1 - Lupina, Grzegorz A1 - Niermann, Tore A1 - Salvalaglio, Marco A1 - Marzegalli, Anna A1 - Schubert, Markus Andreas A1 - Zaumseil, Peter A1 - Krause, Hans-Michael A1 - Skibitzki, Oliver A1 - Lehmann, Michael A1 - Montalenti, Francesco A1 - Xie, Ya-Hong A1 - Schröder, Thomas T1 - Photodetection in hybrid single layer graphene/fully coherent Ge island nanostructures selectively grown on Si nano-tip patterns T2 - ACS Applied Materials and Interfaces Y1 - 2016 SN - 1944-8252 VL - 8 IS - 3 SP - 2017 EP - 2026 ER - TY - GEN A1 - Zaumseil, Peter A1 - Schubert, Markus Andreas A1 - Yamamoto, Yuji A1 - Skibitzki, Oliver A1 - Capellini, Giovanni A1 - Schröder, Thomas T1 - Misfit dislocation-free epitaxial growth of SiGe on compliant nanostructured Silicon T2 - Solid State Phenomena Y1 - 2016 U6 - https://doi.org/10.4028/www.scientific.net/SSP.242.402 SN - 1662-9779 SN - 0377-6883 VL - 242 SP - 402 EP - 407 ER - TY - GEN A1 - Taoka, Noriyuki A1 - Capellini, Giovanni A1 - Driesch, Nils von den A1 - Buca, Dan A1 - Zaumseil, Peter A1 - Schubert, Markus Andreas A1 - Klesse, Wolfgang Matthias A1 - Montanari, Michele A1 - Schröder, Thomas T1 - Sn Migration Control at High Temperature Due to High Deposition Speed for Forming High Quality GeSn Layer T2 - Applied Physics Express Y1 - 2016 U6 - https://doi.org/10.7567/APEX.9.031201 SN - 1882-0786 SN - 1882-0778 VL - 9 IS - 3 SP - 031201 ER - TY - GEN A1 - Niu, Gang A1 - Capellini, Giovanni A1 - Schubert, Markus Andreas A1 - Niermann, Tore A1 - Zaumseil, Peter A1 - Katzer, Jens A1 - Krause, Hans-Michael A1 - Skibitzki, Oliver A1 - Lehmann, Michael A1 - Xie, Ya-Hong A1 - Känel, Hans von A1 - Schröder, Thomas T1 - Dislocation-free Ge nano-crystals via pattern dependent selective Ge heteroepitaxy on Si nano-tip wafers T2 - Scientific Reports Y1 - 2016 U6 - https://doi.org/10.1038/srep22709 SN - 2045-2322 VL - 6 SP - 22709 ER -