TY - GEN A1 - Dudek, Piotr T. A1 - Lupina, Grzegorz A1 - Kozłowski, Grzegorz A1 - Zaumseil, Peter A1 - Bauer, Jakob A1 - Fursenko, Oksana A1 - Dabrowski, Jarek Marek A1 - Schmidt, R. A1 - Lippert, Gunther A1 - Müssig, Hans-Joachim A1 - Schröder, Thomas A1 - Schmeißer, Dieter A1 - Zschech, Ehrenfried T1 - Atomic-scale engineering of future high-k dynamic random access memory dielectrics: The example of partial Hf substitution by Ti in BaHfO3 T2 - Journal of Vacuum Science and Technology / B Y1 - 2011 SN - 2166-2754 VL - 29 IS - 1 ER - TY - GEN A1 - Zöllner, Marvin Hartwig A1 - Dabrowski, Jarek Marek A1 - Zaumseil, Peter A1 - Giussani, A. A1 - Schubert, Markus Andreas A1 - Lupina, Grzegorz A1 - Wilkens, Henrik A1 - Wollschläger, Joachim A1 - Bäumer, Marcus A1 - Reichling, M. A1 - Schröder, Thomas T1 - On the unusual stacking behavior of twin-free, type B oriented CeO2(111) films on hexagonal Pr2O3(0001) / Si(111) systems T2 - Physical Review Y1 - 2012 UR - http://link.aps.org/doi/10.1103/PhysRevB.85.035302 U6 - https://doi.org/10.1103/PhysRevB.85.035302 SN - 1098-0121 VL - 85 IS - 3 SP - 035302 EP - 035311 ER - TY - GEN A1 - Tarnawska, Lidia Lupina A1 - Dabrowski, Jarek Marek A1 - Grzela, Tomasz A1 - Niermann, T. A1 - Lehmann, M. A1 - Storck, Peter A1 - Schröder, Thomas T1 - Interface science of virtual GaN substrates on Si(111) via Sc2O3/Y2O3 buffers: Experiment and Theory T2 - Journal of Applied Physics Y1 - 2013 SN - 0021-8979 VL - 113 IS - 21 SP - 213507 EP - 213507 ER - TY - GEN A1 - Dabrowski, Jarek Marek A1 - Lippert, Gunther A1 - Avila, J. A1 - Baringhaus, Jens A1 - Colambo, I. A1 - Dedkov, Yu. S. A1 - Herziger, Felix A1 - Lupina, Grzegorz A1 - Maultzsch, J. A1 - Schaffus, T. A1 - Schröder, Thomas A1 - Sowinska, Małgorzata A1 - Tegenkamp, Christoph A1 - Vignaud, D. A1 - Asensio, Maria Carmen T1 - Understanding the growth mechanism of graphene on Ge/Si(001) surfaces T2 - Scientific Reports Y1 - 2016 U6 - https://doi.org/10.1038/srep31639 SN - 2045-2322 IS - 6 SP - Art. 31639 ER - TY - GEN A1 - Sana, Prabha A1 - Tetzner, Henriette A1 - Dabrowski, Jarek Marek A1 - Tarnawska, Lidia Lupina A1 - Costina, Ioan A1 - Thapa, Sarad A1 - Storck, Peter A1 - Schröder, Thomas A1 - Zöllner, Marvin Hartwig T1 - Growth of ScN(111) on Sc₂O₃ (111) for GaN integration on Si(111): Experiment and ab initio calculations T2 - Journal of Applied Physics Y1 - 2016 U6 - https://doi.org/10.1063/1.4963826 SN - 1089-7550 SN - 0021-8979 VL - 120 SP - 135103 ER - TY - GEN A1 - Lukosius, Mindaugas A1 - Lippert, Gunther A1 - Dabrowski, Jarek Marek A1 - Kitzmann, Julia A1 - Lisker, Marco A1 - Kulse, Philipp A1 - Krüger, Andreas A1 - Fursenko, Oksana A1 - Costina, Ioan A1 - Trusch, Andreas A1 - Yamamoto, Yuji A1 - Wolff, Andre A1 - Mai, Andreas A1 - Schröder, Thomas T1 - Graphene Synthesis and Processing on Ge Substrates T2 - ECS transactions Y1 - 2016 U6 - https://doi.org/10.1149/07508.0533ecst SN - 1938-6737 SN - 1938-5862 VL - 75 IS - 8 SP - 533 EP - 540 ER - TY - GEN A1 - Lukosius, Mindaugas A1 - Dabrowski, Jarek Marek A1 - Lisker, Marco A1 - Kitzmann, Julia A1 - Schulze, Sebastian A1 - Lippert, Gunther A1 - Fursenko, Oksana A1 - Yamamoto, Yuji A1 - Schubert, Markus Andreas A1 - Krause, Hans-Michael A1 - Wolff, Andre A1 - Mai, A. A1 - Schröder, Thomas A1 - Lupina, Grzegorz T1 - Metal-free, CVD Graphene synthesis on 200 mm Ge / Si(001) substrates T2 - ACS Applied Materials and Interfaces Y1 - 2016 U6 - https://doi.org/10.1021/acsami.6b11397 SN - 1944-8244 SN - 1944-8252 VL - 8 IS - 49 SP - 33786 EP - 33793 ER - TY - GEN A1 - Noatschk, Katharina A1 - Hofmann, E. V. S. A1 - Dabrowski, Jarek Marek A1 - Curson, Neil J. A1 - Schröder, Thomas A1 - Klesse, Wolfgang Matthias A1 - Seibold, Götz T1 - Ge(001) surface reconstruction with Sn impurities T2 - Surface Science N2 - Defects play an important role for surface reconstructions and therefore also influence the substrate growth. In this work we present a first principle calculation for the Ge(001) surface without and with tin impurities incorporated into the top surface layer. By mapping the system onto an Ising-type model, with interaction constants taken from density functional theory, the stability of the surface reconstructions under the influence of different concentrations of tin impurities is explored. This approach allows us to simulate the possible phase transitions for the different surface reconstructions including the local structure around the tin impurity atoms. In addition, we compare our theoretical results with experimental STM images on clean and Sn-doped Ge(100) surfaces. KW - Gesn KW - DFT KW - Monte carlo simulations KW - Surface reconstruction KW - Impurities Y1 - 2021 UR - https://www.sciencedirect.com/science/article/pii/S0039602821001163?dgcid=author U6 - https://doi.org/10.1016/j.susc.2021.121912 VL - 713 SP - 1 EP - 8 ER -