TY - GEN A1 - Schmidt, Juliana J. A1 - Schmidt, Guilherme J. A1 - Tolentino, Julio C. A1 - Simoes, Eunice N. A1 - Obongo, Angela A1 - Tolentino, Yolanda A1 - Coelho, Francisco A. A1 - Landesmann, Maria C. P. P. A1 - Fonseca, Lea M. B. A1 - Lacerda, Glenda C. B. A1 - Schmidt, Sergio L. T1 - A serial SPECT-CT study in a celiac disease patient with cerebellar ataxia and psychiatric symptoms T2 - Neurological sciences N2 - Celiac disease (CD) is an immune-mediated systemic disorder triggered by gluten and related prolamins in genetically predisposed individuals. Here, we described a case of a 31-year-old Caucasian woman who exhibited cerebellar and psychiatric dysfunctions. The patient underwent single-photon emission computed tomography (SPECT-CT) before and after a gluten-free diet (GFD). There was an improvement in cerebellar perfusion accompanied by a remission of cerebellar manifestations. The maintenance of the psychiatric manifestations was related to the persistence of the hypoperfusion in the frontal lobes. The patient's psychiatric symptoms did not change after 4 months under a GFD in the hospital. To our knowledge, this is the first case that shows the relationship between improvement in cerebellar perfusion and remission of cerebellar clinical manifestations in a CD patient under a GFD. KW - Celiac disease KW - Cerebellar perfusion KW - Cerebellum KW - SPECT-CT Y1 - 2021 UR - https://pubmed.ncbi.nlm.nih.gov/33230758/ U6 - https://doi.org/10.1007/s10072-020-04908-2 SN - 1590-3478 VL - 42 SP - 1545 EP - 1548 ER - TY - CHAP A1 - Berg, R. A1 - Cordsen, J. A1 - Heuer, J. A1 - Nolte, Jörg A1 - Oestmann, B. A1 - Sander, M. A1 - Schmidt, Heiko A1 - Schön, F. A1 - Schröder-Preikschat, Wolfgang T1 - The PEACE Family of Distributed Operating Systems Y1 - 1991 ER - TY - CHAP A1 - Berg, R. A1 - Cordsen, J. A1 - Hastedt, Ch. A1 - Heuer, J. A1 - Nolte, Jörg A1 - Sander, M. A1 - Schmidt, Heiko A1 - Schön, F. A1 - Schröder-Preikschat, Wolfgang T1 - Making Massively Parallel Systems Work Y1 - 1991 ER - TY - GEN A1 - Sonia, G. A1 - Richter, E. A1 - Brunner, F. A1 - Denker, A. A1 - Lossy, R. A1 - Mai, M. A1 - Lenk, Friedrich A1 - Bundesmann, J. A1 - Pensl, G. A1 - Schmidt, J. A1 - Zeimer, U. A1 - Wang, L. A1 - Baskar, K. A1 - Weyers, M. A1 - Würfl, Joachim A1 - Tränkle, Günther T1 - 2 MeV ion irradiation effects on AlGaN/GaN HFET devices T2 - Solid-State Electronics N2 - AlGaN/GaN heterostructure field effect transistors (HFETs) were irradiated with 2 MeV protons, carbon, oxygen, iron and krypton ions with fluences ranging from 1 × 109 cm−2 to 1 × 1013 cm−2. DC, pulsed I–V characteristics, loadpull and S-parameters of the AlGaN HFET devices were measured before and after irradiation. In parallel, a thick GaN reference layer was also irradiated with the same ions and was characterized by X-ray diffraction, photoluminescence, Hall measurements before and after irradiation. Small changes in the device performance were observed after irradiation with carbon and oxygen at a fluence of 5 × 1010 cm−2. Remarkable changes in device characteristics were seen at a fluence of 1 × 1012 cm−2 for carbon, oxygen, iron and krypton irradiation. Similarly, remarkable changes were also observed in the GaN layer for irradiations with fluence of 1 × 1012 cm−2. The results found on devices and on the GaN layer were compared and correlated. Y1 - 2008 UR - http://www.sciencedirect.com/science/article/pii/S0038110108000671 SN - 0038-1101 VL - 52 IS - 7 SP - 1011 EP - 1017 ER - TY - GEN A1 - Gnanapragasam, S. A1 - Richter, E. A1 - Brunner, F. A1 - Denker, A. A1 - Lossy, R. A1 - Mai, M. A1 - Lenk, Friedrich A1 - Opitz-Coutureau, J. A1 - Pensl, G. A1 - Schmidt, J. A1 - Zeimer, U. A1 - Wang, L. A1 - Krishnan, B. A1 - Weyers, M. A1 - Würfl, Joachim A1 - Tränkle, Günther T1 - Irradiation effects on AlGaN HFET devices and GaN layers T2 - Journal of Materials Science: Materials in Electronics N2 - AlGaN/GaN heterostructure field effect transistors (HFETs) were irradiated with protons as well as carbon, oxygen, iron and krypton ions of high (68 and 120 MeV) and low (2 MeV) energy with fluences in the range from 1x107 to 1x1013 cm-2. High energy irradiation with protons, carbon and oxygen produced no degradation in devices while krypton irradiation at the fluence of 1x1010 cm-2 resulted in a small reduction of 2% in the transconductance. Similarly, for GaN samples irradiated with protons, carbon and oxygen at high energy no changes were seen by XRD, PL and Hall effect, while changes in lattice constant and a reduction in PL intensity were observed after irradiation with high energy krypton. Low energy irradiation with carbon and oxygen at a fluence of 5x1010 cm-2 results in small change in the device performance while remarkable changes in device characteristics are seen at a fluence of 1x1012 cm-2 for carbon, oxygen, iron and krypton irradiation. Similarly changes are also observed by XRD, PL and Hall effect for the thick GaN layer irradiated at the fluence of 1x1012 cm-2. The device results and GaN layer properties are strongly correlated. Y1 - 2008 U6 - https://doi.org/10.1007/s10854-008-9589-1 SN - 1573-482X VL - 19 IS - 1 SP - 64 EP - 67 ER - TY - GEN A1 - Sonia, G. A1 - Richter, E. A1 - Brunner, F. A1 - Denker, A. A1 - Lossy, R. A1 - Lenk, Friedrich A1 - Opitz-Coutureau, J. A1 - Mai, M. A1 - Schmidt, J. A1 - Zeimer, U. A1 - Wang, L. A1 - Baskar, K. A1 - Weyers, M. A1 - Würfl, Joachim A1 - Tränkle, Günther T1 - High energy irradiation effects on AlGaN/GaN HFET devices T2 - Semiconductor Science and Technology N2 - The effect of proton, carbon, oxygen and krypton irradiation on AlGaN HFET devices has been studied. Irradiation was performed at 68 and 120 MeV with fluences in the range from 1 × 10^7 to 1 × 10^13 cm2 . Before and after irradiation, dc and pulsed I – V characteristics, loadpull and S -parameters of the AlGaN HFET devices were measured. A thick GaN reference layer was characterized by x-ray diffraction, photoluminescence and Hall measurements before and after irradiation. Proton, carbon and oxygen irradiation show no degradation in devices while krypton irradiation shows a small change at a fluence of 1 × 10 10 cm2 in the device characteristics. The device results are correlated with the thick GaN results. Y1 - 2007 U6 - https://doi.org/10.1088/0268-1242/22/11/007 SN - 0268-1242 VL - 22 IS - 11 SP - 1220 EP - 1224 ER - TY - CHAP A1 - Schmidt, J.-R. A1 - Egbers, Christoph A1 - Rath, H. J. T1 - Experiments on the isothermal flow in wide spherical gaps Y1 - 2001 ER - TY - GEN A1 - Noack, J. A1 - Schmidt, L. A1 - Gläsel, H.-J. A1 - Bauer, Monika A1 - Kemnitz, E. T1 - Inorganic-organic Nanocomposites Based on Sol-Gel Derived Magnesium Flouride Y1 - 2011 ER - TY - CHAP A1 - Killat, Dirk A1 - Schmidt, J. A1 - Baumgartner, A. A1 - Baraniecki, Robert A1 - Salzmann, O. T1 - One-chip solution in 0.35 µm standard CMOS for electronic ballasts for fluorescent lamps Y1 - 2003 ER - TY - GEN A1 - Schmidt, Heiko A1 - Kerstein, Alan R. A1 - Nédélec, Renaud A1 - Wunsch, Scott A1 - Sayler, Ben J. T1 - Numerical study of radiatively induced entrainment T2 - Journal of Physics: Conference Series Y1 - 2011 U6 - https://doi.org/10.1088/1742-6596/318/7/072017 SN - 1742-6588 VL - 318 SP - 072017 ER -