TY - GEN A1 - Schmidt, Juliana J. A1 - Schmidt, Guilherme J. A1 - Tolentino, Julio C. A1 - Simoes, Eunice N. A1 - Obongo, Angela A1 - Tolentino, Yolanda A1 - Coelho, Francisco A. A1 - Landesmann, Maria C. P. P. A1 - Fonseca, Lea M. B. A1 - Lacerda, Glenda C. B. A1 - Schmidt, Sergio L. T1 - A serial SPECT-CT study in a celiac disease patient with cerebellar ataxia and psychiatric symptoms T2 - Neurological sciences N2 - Celiac disease (CD) is an immune-mediated systemic disorder triggered by gluten and related prolamins in genetically predisposed individuals. Here, we described a case of a 31-year-old Caucasian woman who exhibited cerebellar and psychiatric dysfunctions. The patient underwent single-photon emission computed tomography (SPECT-CT) before and after a gluten-free diet (GFD). There was an improvement in cerebellar perfusion accompanied by a remission of cerebellar manifestations. The maintenance of the psychiatric manifestations was related to the persistence of the hypoperfusion in the frontal lobes. The patient's psychiatric symptoms did not change after 4 months under a GFD in the hospital. To our knowledge, this is the first case that shows the relationship between improvement in cerebellar perfusion and remission of cerebellar clinical manifestations in a CD patient under a GFD. KW - Celiac disease KW - Cerebellar perfusion KW - Cerebellum KW - SPECT-CT Y1 - 2021 UR - https://pubmed.ncbi.nlm.nih.gov/33230758/ U6 - https://doi.org/10.1007/s10072-020-04908-2 SN - 1590-3478 VL - 42 SP - 1545 EP - 1548 ER - TY - CHAP A1 - Berg, R. A1 - Cordsen, J. A1 - Heuer, J. A1 - Nolte, Jörg A1 - Oestmann, B. A1 - Sander, M. A1 - Schmidt, Heiko A1 - Schön, F. A1 - Schröder-Preikschat, Wolfgang T1 - The PEACE Family of Distributed Operating Systems Y1 - 1991 ER - TY - CHAP A1 - Berg, R. A1 - Cordsen, J. A1 - Hastedt, Ch. A1 - Heuer, J. A1 - Nolte, Jörg A1 - Sander, M. A1 - Schmidt, Heiko A1 - Schön, F. A1 - Schröder-Preikschat, Wolfgang T1 - Making Massively Parallel Systems Work Y1 - 1991 ER - TY - GEN A1 - Sonia, G. A1 - Richter, E. A1 - Brunner, F. A1 - Denker, A. A1 - Lossy, R. A1 - Mai, M. A1 - Lenk, Friedrich A1 - Bundesmann, J. A1 - Pensl, G. A1 - Schmidt, J. A1 - Zeimer, U. A1 - Wang, L. A1 - Baskar, K. A1 - Weyers, M. A1 - Würfl, Joachim A1 - Tränkle, Günther T1 - 2 MeV ion irradiation effects on AlGaN/GaN HFET devices T2 - Solid-State Electronics N2 - AlGaN/GaN heterostructure field effect transistors (HFETs) were irradiated with 2 MeV protons, carbon, oxygen, iron and krypton ions with fluences ranging from 1 × 109 cm−2 to 1 × 1013 cm−2. DC, pulsed I–V characteristics, loadpull and S-parameters of the AlGaN HFET devices were measured before and after irradiation. In parallel, a thick GaN reference layer was also irradiated with the same ions and was characterized by X-ray diffraction, photoluminescence, Hall measurements before and after irradiation. Small changes in the device performance were observed after irradiation with carbon and oxygen at a fluence of 5 × 1010 cm−2. Remarkable changes in device characteristics were seen at a fluence of 1 × 1012 cm−2 for carbon, oxygen, iron and krypton irradiation. Similarly, remarkable changes were also observed in the GaN layer for irradiations with fluence of 1 × 1012 cm−2. The results found on devices and on the GaN layer were compared and correlated. Y1 - 2008 UR - http://www.sciencedirect.com/science/article/pii/S0038110108000671 SN - 0038-1101 VL - 52 IS - 7 SP - 1011 EP - 1017 ER - TY - GEN A1 - Gnanapragasam, S. A1 - Richter, E. A1 - Brunner, F. A1 - Denker, A. A1 - Lossy, R. A1 - Mai, M. A1 - Lenk, Friedrich A1 - Opitz-Coutureau, J. A1 - Pensl, G. A1 - Schmidt, J. A1 - Zeimer, U. A1 - Wang, L. A1 - Krishnan, B. A1 - Weyers, M. A1 - Würfl, Joachim A1 - Tränkle, Günther T1 - Irradiation effects on AlGaN HFET devices and GaN layers T2 - Journal of Materials Science: Materials in Electronics N2 - AlGaN/GaN heterostructure field effect transistors (HFETs) were irradiated with protons as well as carbon, oxygen, iron and krypton ions of high (68 and 120 MeV) and low (2 MeV) energy with fluences in the range from 1x107 to 1x1013 cm-2. High energy irradiation with protons, carbon and oxygen produced no degradation in devices while krypton irradiation at the fluence of 1x1010 cm-2 resulted in a small reduction of 2% in the transconductance. Similarly, for GaN samples irradiated with protons, carbon and oxygen at high energy no changes were seen by XRD, PL and Hall effect, while changes in lattice constant and a reduction in PL intensity were observed after irradiation with high energy krypton. Low energy irradiation with carbon and oxygen at a fluence of 5x1010 cm-2 results in small change in the device performance while remarkable changes in device characteristics are seen at a fluence of 1x1012 cm-2 for carbon, oxygen, iron and krypton irradiation. Similarly changes are also observed by XRD, PL and Hall effect for the thick GaN layer irradiated at the fluence of 1x1012 cm-2. The device results and GaN layer properties are strongly correlated. Y1 - 2008 U6 - https://doi.org/10.1007/s10854-008-9589-1 SN - 1573-482X VL - 19 IS - 1 SP - 64 EP - 67 ER - TY - GEN A1 - Sonia, G. A1 - Richter, E. A1 - Brunner, F. A1 - Denker, A. A1 - Lossy, R. A1 - Lenk, Friedrich A1 - Opitz-Coutureau, J. A1 - Mai, M. A1 - Schmidt, J. A1 - Zeimer, U. A1 - Wang, L. A1 - Baskar, K. A1 - Weyers, M. A1 - Würfl, Joachim A1 - Tränkle, Günther T1 - High energy irradiation effects on AlGaN/GaN HFET devices T2 - Semiconductor Science and Technology N2 - The effect of proton, carbon, oxygen and krypton irradiation on AlGaN HFET devices has been studied. Irradiation was performed at 68 and 120 MeV with fluences in the range from 1 × 10^7 to 1 × 10^13 cm2 . Before and after irradiation, dc and pulsed I – V characteristics, loadpull and S -parameters of the AlGaN HFET devices were measured. A thick GaN reference layer was characterized by x-ray diffraction, photoluminescence and Hall measurements before and after irradiation. Proton, carbon and oxygen irradiation show no degradation in devices while krypton irradiation shows a small change at a fluence of 1 × 10 10 cm2 in the device characteristics. The device results are correlated with the thick GaN results. Y1 - 2007 U6 - https://doi.org/10.1088/0268-1242/22/11/007 SN - 0268-1242 VL - 22 IS - 11 SP - 1220 EP - 1224 ER - TY - CHAP A1 - Schmidt, J.-R. A1 - Egbers, Christoph A1 - Rath, H. J. T1 - Experiments on the isothermal flow in wide spherical gaps Y1 - 2001 ER - TY - GEN A1 - Noack, J. A1 - Schmidt, L. A1 - Gläsel, H.-J. A1 - Bauer, Monika A1 - Kemnitz, E. T1 - Inorganic-organic Nanocomposites Based on Sol-Gel Derived Magnesium Flouride Y1 - 2011 ER - TY - CHAP A1 - Killat, Dirk A1 - Schmidt, J. A1 - Baumgartner, A. A1 - Baraniecki, Robert A1 - Salzmann, O. T1 - One-chip solution in 0.35 µm standard CMOS for electronic ballasts for fluorescent lamps Y1 - 2003 ER - TY - GEN A1 - Schmidt, Heiko A1 - Kerstein, Alan R. A1 - Nédélec, Renaud A1 - Wunsch, Scott A1 - Sayler, Ben J. T1 - Numerical study of radiatively induced entrainment T2 - Journal of Physics: Conference Series Y1 - 2011 U6 - https://doi.org/10.1088/1742-6596/318/7/072017 SN - 1742-6588 VL - 318 SP - 072017 ER - TY - GEN A1 - Schmidt, Heiko A1 - Kerstein, Alan R. A1 - Nédélec, Renaud A1 - Wunsch, Scott A1 - Sayler, Ben J. T1 - Analysis and numerical simulation of a laboratory analog of radiatively induced cloud-top entrainment T2 - Theoretical Computational Fluid Dynamics Y1 - 2012 U6 - https://doi.org/10.1007/s00162-012-0288-4 SN - 1432-2250 ER - TY - CHAP A1 - Jimenez, Carmen A1 - Moeck, J. A1 - Schmidt, Heiko T1 - Comparison of transfer functions of acoustically forced planar premixed hydrogen and methane flames T2 - 13th International Conference on Numerical Combustion, April 27-29, 2011, Corfu, Greece Y1 - 2011 UR - https://www-docs.b-tu.de/fg-stroemungsmodellierung/public/2011_ICNC_Corfu.pdf ER - TY - CHAP A1 - Nédélec, Renaud A1 - Schmidt, Heiko A1 - Wunsch, Scott A1 - Sayler, Ben J. A1 - Kerstein, Alan R. T1 - Comparison of Entrainment Rates from a Tank Experiment with Results Us- ing the One-Dimensional-Turbulence Model T2 - EGU General Assembly 2010, held in Vienna, Austria, 02 – 07 May 2010 Y1 - 2010 UR - http://meetingorganizer.copernicus.org/EGU2010/EGU2010-378-1.pdf N1 - EGU2010-378-1 ER - TY - GEN A1 - Kerstein, Alan R. A1 - Schmidt, Heiko A1 - Nédélec, Renaud A1 - Wunsch, Scott A1 - Sayler, Ben J. T1 - Analysis and numerical simulation of a laboratory analog of radiatively induced cloud-top entrainment T2 - Bulletin of the American Physical Society Dynamics Y1 - 2010 UR - http://meetings.aps.org/Meeting/DFD10/Event/133814 N1 - 63rd Annual Meeting of the APS Division of Fluid Dynamics, November 21–23, 2010, Long Beach, California VL - 55 IS - 16 ER - TY - GEN A1 - Müller, Carola J. A1 - Schwarz, Ulrich A1 - Schmidt, Peer A1 - Schnelle, Walter A1 - Doert, Thomas T1 - High-Pressure Synthesis, Crystal Structure, and Properties of GdS2 with Thermodynamic Investigations in the Phase Diagram Gd-S, T2 - Zeitschrift für anorganische und allgemeine Chemie N2 - Gadolinium disulfide was prepared by high-pressure synthesis at 8 GPa and 1173 K. It crystallizes in the monoclinic space group P121/a1 (No. 14) with lattice parameters a = 7.879(1) Å; b = 3.936(1) Å, c = 7.926(1) Å and β = 90.08(1)°. The crystal structure is a twofold superstructure of the aristotype ZrSSi and consists of puckered cationic [GdS]+ double slabs that are sandwiched by planar sulfur sheets containing S22– dumbbells. The thermal decomposition of GdS2 proceeds via the sulfur-deficient polysulfides GdS1.9, GdS1.85 and GdS1.77 and eventually results in the sesquisulfide Gd2S3. GdS2 is a paramagnetic semiconductor which orders antiferromagnetically at TN = 7.7(1) K. A metamagnetic transition is observed in the magnetically ordered state. KW - Polysulfides KW - Gadolinium KW - High-pressure synthesis KW - X-ray diffraction KW - Phase diagrams Y1 - 2010 UR - http://onlinelibrary.wiley.com/doi/10.1002/zaac.201000015/full U6 - https://doi.org/10.1002/zaac.201000015 SN - 1521-3749 VL - 636 IS - 6 SP - 947 EP - 953 ER - TY - GEN A1 - Grzela, Tomasz A1 - Capellini, Giovanni A1 - Koczorowski, Wojciech A1 - Schubert, Markus Andreas A1 - Czajka, Ryszard A1 - Curson, Neil J. A1 - Heidmann, Inga A1 - Schmidt, Thomas A1 - Falta, Jens A1 - Schröder, Thomas T1 - Growth and evolution of nickel – germanide nanonstructures on Ge(001) T2 - Nanotechnology Y1 - 2015 SN - 1361-6528 SN - 0957-4484 VL - 26 IS - 38 SP - 385701 ER - TY - GEN A1 - Pozarowska, Emilia A1 - Pleines, Linus A1 - Prieto, Mauricio J. A1 - Tănase, Liviu Christian A1 - Souza Caldas, Lucas de A1 - Tiwari, Aarti A1 - Schmidt, Thomas A1 - Falta, Jens A1 - Morales, Carlos A1 - Flege, Jan Ingo T1 - The relation between structure sensitivity and doping of ceria(111) vs. ceria(100) T2 - Verhandlungen der DPG N2 - CeOx-Cu inverse catalysts have been shown to convert CO2 into valuable chemicals through catalytic hydrogenation. The catalytic activity may further be enhanced by alloying ceria with trivalent, catalytically active metals, such as Sm, promoting the formation of Ce3+ active sites. In this work, the structural and chemical properties of (111)- and (100)- oriented CeOx islands alloyed with samarium were explored by low-energy electron microscopy and X-ray photoemission electron microscopy. After Sm deposition on the as-grown CeOx islands, the near-surface region of (100)-oriented CeOx is reduced after exposure to H2 at 470 ∘C, whereas the deeper layers as well as the whole (111)-oriented islands retain the Ce4+ state. Subsequent reoxidation with O2 leads to the complete Ce4+ state recovery, suggesting the healing of oxygen vacancies. Additional annealing at 470 ∘C induces samarium diffusion into the ceria matrix. Yet, subsequent exposure to H2 reduces neither the (111)- nor the (100)-oriented CeSmOx islands, suggesting a quite unexpected stability of this system. KW - catalytic hydrogenation KW - Samarium alloying of cerium oxide KW - low-energy electron microscopy (LEEM) KW - X-ray photoemission electron microscopy (PEEM) KW - healing of oxygen vacancies Y1 - 2022 UR - https://www.dpg-verhandlungen.de/year/2022/conference/regensburg/part/o/session/52/contribution/11 SN - 0420-0195 PB - Deutsche Physikalische Gesellschaft CY - Bad Honnef ER - TY - GEN A1 - Pożarowska, Emilia A1 - Pleines, Linus A1 - Ewert, Moritz A1 - Prieto, Mauricio J. A1 - Tănase, Liviu Christian A1 - Souza Caldas, Lucas de A1 - Tiwari, Aarti A1 - Schmidt, Thomas A1 - Falta, Jens A1 - Krasovskii, Eugene A1 - Morales, Carlos A1 - Flege, Jan Ingo T1 - Preparation and stability of the hexagonal phase of samarium oxide on Ru(0001) T2 - Ultramicroscopy N2 - We have used low-energy electron microscopy (LEEM), micro-illumination low-energy electron diffraction (µLEED) supported by ab initio calculations, and X-ray absorption spectroscopy (XAS) to investigate in-situ and in real-time the structural properties of Sm2O3 deposits grown on Ru(0001), a rare-earth metal oxide model catalyst. Our results show that samarium oxide grows in a hexagonal A-Sm2O3 phase on Ru(0001), exhibiting a (0001) oriented-top facet and (113) side facets. Upon annealing, a structural transition from the hexagonal to cubic phase occurs, in which the Sm cations exhibit the +3 oxidation state. The unexpected initial growth in the A-Sm2O3 hexagonal phase and its gradual transition to a mixture with cubic C-Sm2O3 showcases the complexity of the system and the critical role of the substrate in the stabilization of the hexagonal phase, which was previously reported only at high pressures and temperatures for bulk samaria. Besides, these results highlight the potential interactions that Sm could have with other catalytic compounds with respect to the here gathered insights on the preparation conditions and the specific compounds with which it interacts. KW - Samarium oxide (Sm2O3) KW - low-energy electron microscopy (LEEM) KW - X-ray photoemission electron microscopy (XPEEM) KW - Facets KW - Epitaxy KW - Hexagonal phase Y1 - 2023 U6 - https://doi.org/10.1016/j.ultramic.2023.113755 SN - 0304-3991 SN - 1879-2723 VL - 250 ER - TY - GEN A1 - Krisponeit, Jon-Olaf A1 - Fischer, Simon A1 - Esser, Sven A1 - Moshnyaga, Vasily A1 - Schmidt, Thomas A1 - Piper, Louis F. J. A1 - Flege, Jan Ingo A1 - Falta, Jens T1 - The morphology of VO2/TiO2(001): terraces, facets, and cracks T2 - Scientific Reports N2 - Vanadium dioxide (VO2) features a pronounced, thermally-driven metal-to-insulator transition at 340 K. Employing epitaxial stress on rutile TiO2(001) substrates, the transition can be tuned to occur close to room temperature. Striving for applications in oxide-electronic devices, the lateral homogeneity of such samples must be considered as an important prerequisite for efforts towards miniaturization. Moreover, the preparation of smooth surfaces is crucial for vertically stacked devices and, hence, the design of functional interfaces. Here, the surface morphology of VO2/TiO2(001) films was analyzed by low-energy electron microscopy and diffraction as well as scanning probe microscopy. The formation of large terraces could be achieved under temperature-induced annealing, but also the occurrence of facets was observed and characterized. Further, we report on quasi-periodic arrangements of crack defects which evolve due to thermal stress under cooling. While these might impair some applicational endeavours, they may also present crystallographically well-oriented nano-templates of bulk-like properties for advanced approaches. KW - Vanadium dioxide (VO2) KW - rutile TiO2(001) KW - metal-to-insulator transition KW - morphology KW - crystallography KW - low-energy electron microscopy (LEEM) KW - low-energy electron diffraction (LEED) KW - scanning probe microscopy Y1 - 2020 U6 - https://doi.org/10.1038/s41598-020-78584-9 SN - 2045-2322 VL - 10 ER - TY - GEN A1 - Schmidt, Heiko A1 - Kerstein, Alan R. A1 - Nédélec, Renaud A1 - Wunsch, Scott A1 - Sayler, Ben J. T1 - One-dimensional turbulence simulation of a laboratory analog of radiatively induced cloud-top entrainment Y1 - 2011 UR - https://www-docs.b-tu.de/fg-stroemungsmodellierung/public/2011_Metstroem_Berlin.pdf N1 - MetStröm Conference 2011 on Multiple Scales in Fluid Dynamics and Meteorology ER - TY - CHAP A1 - Doynov, Nikolay A1 - Ossenbrink, Ralf A1 - Schmidt, J. A1 - Michailov, Vesselin T1 - Utilization of Weld Pool Models in Thermal-Mechanical Simulations T2 - Mathematical modelling of weld phenomena 8 KW - weld pool models KW - model KW - thermal-mechanical simulation KW - simulation KW - welding KW - fügen KW - schweißen KW - Fügetechnik Y1 - 2007 SN - 978-3-902465-69-6 PB - Verl. der Techn. Univ. Graz CY - Graz ER - TY - CHAP A1 - Bleh, D. A1 - Ostendorf, Ralf A1 - Merten, A. A1 - Grahmann, Jan A1 - Schenk, Harald A1 - Kunzer, M. A1 - Schmidt, R. A1 - Wagner, J. T1 - Miniaturization of a fast tunable external cavity QCL with customized gratings and MOEMS components T2 - International Quantum Cascade Lasers School & Workshop (IQCLSW), Policoro, Italy Y1 - 2014 UR - http://www.iqclsw2014.cnr.it/wp-content/uploads/2014/03/Bleh-IQCLSW2014.pdf?0f100a SP - 1 EP - 2 ER - TY - CHAP A1 - Ristau, R. A1 - Meier, M. A1 - Egbers, Christoph A1 - Schmidt, J.-R. A1 - Poppe, T. T1 - Partikelbeladene Strömungen : Simulation und Messtechnik Y1 - 2001 ER -