TY - CHAP A1 - Yfantis, Alexandros D. A1 - Tsiniarakis, G. A1 - Labrakopoulos, S. A1 - Yfantis, Alexandros D. A1 - Schmeißer, Dieter T1 - Conductive polymers of pyrrole as pigments in organic anticorrosive coatings-application for aluminium alloys Y1 - 2001 ER - TY - GEN A1 - Lewerenz, Hans-Joachim A1 - Aggour, Mohammed A1 - Murrell, Chris A1 - Kanis, M. A1 - Jungblut, H. A1 - Jakubowicz, J. A1 - Cox, P. A. A1 - Campbell, S. A. A1 - Hoffmann, Patrick A1 - Schmeißer, Dieter T1 - Initial stages of structure formation on silicon electrodes investigated by photoelectron spectroscopy using synchrotron radiation and in-situ atomic force microscopy T2 - Journal of the Electrochemical Society N2 - The surface condition of electrochemically H-terminated Si is compared with the situation at the first photocurrent maximum in dilute acidic ammonium fluoride solution where the divalent dissolution converts into the four-valence process. The first high spectral-resolution photoelectron spectroscopy data using synchrotron radiation of electrochemically hydrogenated Si are presented. A combined electrochemistry/ultrahigh vacuum surface analysis system, attached to the U 49/2 beamline at the synchrotron Bessy II, is used for photoelectron spectroscopy (PES) of the electrochemically conditioned samples. We analyze the Si 2p, O 1s, and F 1s core levels. A comparison of a density functional theory calculation of the reaction sequence, proposed in the dissolution model of Gerischer and co-workers, with the PES results supports this model. The anodized sample is characterized by a residual H coverage of 0.35 monolayers evidenced by a surface core level shift, Si-OH and Si-Fx species, F-, and a higher oxidized Si species. SiO2 is not found. Even on very well H-terminated surfaces, we find residual Si-OH complexes, fluoride and water. In situ atomic force microscopy shows a roughening with a root mean square roughness parameter of 2.6 nm. %A92003 The Electrochemical Society. All rights reserved. Y1 - 2003 SN - 1945-7111 VL - 150 IS - 3 SP - E185 EP - E189 ER - TY - GEN A1 - Hoffmann, Patrick A1 - Schmeißer, Dieter A1 - Roters, G. A1 - Nenyei, Z. T1 - Non-destructive probing of interfacial oxidation and nitridation states at RTA Si-oxides T2 - Thin Solid Films N2 - The quality of the SiO2/Si interface is of crucial importance in the development and performance of sub 0.1 small mu, Greekm technologies. The knowledge of the chemical composition of the interface is an important piece of information in the preparation of ultra-thin oxides and high-k dielectrics, in order to maintain a high-quality interface and channel mobility. Here we report on investigations of 2 nm oxide layers formed by a RTP process under various gas mixtures containing N2O and NH3 at different concentrations. We studied the SiO2/Si(001) interface by a non-destructive depth profiling using Synchrotron radiation photoelectron spectroscopy. We determine the thickness of the oxide layer, the relative content and chemical state of nitrogen within the oxide, the thickness of the interface layer, and the relative abundance of Si intermediate oxides within. In all systems we find the thickness of the intermediate layer to be approximately 0.17 nm. The intermediate layer contains Si atoms in the oxidation states +1, +2 and +3 with similar relative abundance. Nitrogen is found predominantly close to the intermediate layer forming Si---N as well as Si---N---O bonds. Within the oxide there are only spurious nitrogen content with predominately Si---N---O bonds. Our method is able to detect a nitrogen content within the intermediate layer as low as approximately 5%. KW - Silicon KW - Oxynitride KW - N20 KW - NH3 KW - Photoelectron spectroscopy KW - Ultrathin oxide Y1 - 2003 SN - 0040-6090 VL - 428 IS - 1-2 SP - 216 EP - 222 ER - TY - JOUR A1 - Schmeißer, Dieter A1 - Paloumpa, Ioanna A1 - Hoffmann, Patrick A1 - Burkov, Yevgen A1 - Yfantis, Alexandros D. A1 - Yfantis, Alexandros D. T1 - Preventing Corrosion of Aluminium Alloys by Polymeric Coatings N2 - Aluminium is a material of everyday use in many applications,like automobile,aero-space or cookware,due to its specialproperties (low density,low weight,strength,easy to form and cast,abundance etc).Although aluminium is a reactive metal,italso has a significant corrosion resistance because of a thin,protective oxide layer which is generally stable in air and aqueous solutions.However,pores within the oxide film and other defects caused from alloying elements can lead to local corrosion and the formation of pits. Y1 - 2003 ER - TY - JOUR A1 - Müller, Klaus A1 - Milko, S. A1 - Schmeißer, Dieter T1 - Preparation of stoichiometric CuInS2-surfaces - an XPS, UPS-study JF - Thin Solid Films N2 - CuInS2 films are investigated with photoelectron spectroscopy. We find significant deviation from the stoichiometric composition depending on the preparation on the films. For Cu-rich films (start composition) we show that by Ar sputtering and annealing the surface composition varies along a binary cut of the Cu-In-S ternary phase diagram. We also present a novel technique which brings the surface composition close to the stoichiometric stability range of the CuInS2 phase. The technique used the evaporation of Cu on the sputter cleaned surface. KW - Stoichiometric CuInS2-films KW - Annealing KW - XPS KW - UPS Y1 - 2003 SN - 0040-6090 VL - 431-432 SP - 312 EP - 316 ER - TY - GEN A1 - Müller, Klaus A1 - Burkov, Yevgen A1 - Schmeißer, Dieter T1 - PEEM and my-NEXAFS of Cu-In-S2-surfaces T2 - Thin Solid Films N2 - Polycrystalline CuInS2 samples are an ideal system for photoemission electron microscope studies. The polycrystalline grains have a diameter of approximately 5 small mu, Greekm and the system is expected to be highly inhomogeneous because of the existence of many sub-phases. We used a recently established procedure to reproducibly obtain stoichiometric CuInS2-surfaces and follow the changes in the morphology, the elemental inhomogeneous distribution, and the development of the electronic structure upon its preparation. We find that the individual grains trend to coagulate, the surface composition becomes more homogeneous, and identify characteristic features of the unoccupied DOS. KW - CuInS2 films KW - Annealing-process KW - PEEM KW - small mu KW - NEXAFS Y1 - 2003 SN - 0040-6090 VL - 431-432 SP - 307 EP - 311 ER - TY - GEN A1 - Schmeißer, Dieter T1 - Valence states of poly(3-hexyl-thiophene) as probed by photoelectron spectra at resonant excitation T2 - Synthetic Metals N2 - Photoelectron spectroscopy employing synchrotron radiation is applied to learn about the electronic structure of regio-regular poly(3-hexyl-thiophene) (P3hT). We study the valence band photoelectron spectra around the carbon 1s threshold. This technique is equivalent to resonant excitation of core electrons into empty valence states. We probe the properties of these carriers in the conduction band and also learn about valence band states involved in the carbon (K L L) Auger transitions. The data give evidence that monomeric orbital energies are dominating in such processes. We conclude that poly(3-hexyl-thiophene) is a polymer with a rather short conjugation length. KW - Resonant photoelectron spectroscopy KW - Semi-conducting polymers KW - Organic field effect Y1 - 2003 SN - 0379-6779 VL - 138 IS - 1-2 SP - 135 EP - 140 ER - TY - GEN A1 - Müller, Klaus A1 - Paloumpa, Ioanna A1 - Schmeißer, Dieter T1 - Carbon-plot-microstructuring for all-polymer-transistors T2 - Synthetic Metals N2 - This contribution describes the use of a low-cost technology to produce organic microstructures for electronically applications. With a computer driven plotter, substrates like printing foil and colloidal graphite (diluted in water) for the electrodes, we realised channel lengths of 20±10 microm. Compared with transistor devices, fabricated using conventional photolithographic methods and the same semiconducting material, this technique is a hopeful approach to produce microelectronic structures that are low-cost and all-organic. KW - Ten micrometer carbon-plot KW - Organic field-effect-transistors KW - Low-cost-technique Y1 - 2003 SN - 0379-6779 VL - 138 IS - 1-2 SP - 271 EP - 273 ER - TY - GEN A1 - Riess, W. A1 - Schmeißer, Dieter T1 - Organic Materials for Device Applications - Preface T2 - Synthetic Metals Y1 - 2003 SN - 0379-6779 VL - 138 IS - 1–2 ER - TY - GEN A1 - Schmeißer, Dieter A1 - Pressel, Klaus A1 - Yamamoto, Yuji A1 - Tillack, Bernd A1 - Krüger, D. T1 - Ge instabilities near interfaces in Si-SiGe-Si heterostructures T2 - Materials Science & Engineering B N2 - Compositional characterization of interfaces in Si-cap/SixGe1-x/Si heterostructures is an important topic in SiGe based advanced microelectronics and in quantum wells. Extremely high depth resolution is required to detect and optimize near-interface compositional gradients which are crucial for high circuit performance. We report on non-destructive, high-resolution, near-interface depth profiling using SR photoelectron spectroscopy at an undulator beamline. We measured the Ge content at the SixGe1-x interface towards the native SiO2 layer and investigated the influence of additional (1nm and 2nm) Si capping layers (Si-cap). For the uncapped samples we found near the oxide/ SiGe interface region a strong mixing of Ge-oxides and SiOx. This indicates a high instability of the Ge atoms at those interfaces while silicon capped (1nm, 2nm) SixGe1-x films are more stable. We detect sharp Ge concentration gradients within the first 1nm at the Si/SixGe1-x interface. These results open new possibilities for Ge profile optimization in Si-cap/SixGe1-x/Si heterostructures. In the Ge3d spectra we differentiate the Ge atoms to occupy three different lattice sites and are able to follow their relative occupation within the Ge gradient. KW - SiGe KW - Depth profiling KW - Interfaces KW - XPS Y1 - 2003 SN - 0921-5107 SN - 1873-4944 VL - 101 IS - 1-3 SP - 208 EP - 211 ER - TY - GEN A1 - Schmeißer, Dieter A1 - Müssig, Hans-Joachim T1 - The Pr2O3 / Si (001) interface studied by synchrotron radiation photo-electron spectroscopy T2 - Solid State Electronics N2 - Pr2O3 is currently under consideration as a potential replacement for SiO2 as the gate-dielectric material for sub-0.1micro m complementary metal-oxide-semiconductor (CMOS) technology. We studied the Pr2O3/Si(0 0 1) interface by a non-destructive depth profiling using synchrotron radiation photoelectron spectroscopy. Our data suggests that there is no silicide formation at the interface. Based on reported results, a chemical reactive interface exists, consisting of a mixed Si-Pr oxide such as (Pr2O3)x(SiO2)1?x, i.e. as a silicate phase with variable silicon content. This pseudo-binary alloy at the interface offers large flexibility toward successful integration of Pr2O3 into future CMOS technologies. KW - High-k dielectric material KW - Pr2O3 KW - Interface KW - Silicate Y1 - 2003 SN - 0038-1101 VL - 47 IS - 10 SP - 1607 EP - 1611 ER - TY - GEN A1 - Schmeißer, Dieter A1 - Irmscher, Klaus A1 - Wagner, Gerd T1 - Photoelectron spectra of Al dopants in 4H-SiC T2 - Materials Science & Engineering B N2 - Al-doped 4H-SiC epitaxial layers were grown in a hot-wall chemical vapor deposition (CVD) system on commercial 4H-SiC substrates (CREE). The incorporation of Aluminum has been studied in the concentration range from 2*1014cm-3 up to 3*1020cm-3. Epitaxial layers with doping concentration NA-ND> 1019cm-3 were studied by HV-TEM and synchrotron radiation investigations. In the concentration range from 1*1019cm-3 to 3*1020 cm-3, measured by SIMS and Hall investigations, no Aluminum precipitation were detected in the grown layers. For SiC samples with an Al concentration of 1020cm-3 we have been able to detect the Al2p photoemission signal. The Al2p signal is recorded through the oxide layer (thickness of about 0.4nm), it has a main contribution at a binding energy of 73eV which corresponds to the energy typical for elemental Al0. In spectra excited with higher photon energies the sampled photoelectrons originate from deeper layers. In these data we notice an additional shoulder in the Al2p signal at around 71eV. The evidence of two contributions is attributed to the fact that Al is incorporated at different lattice sites. As the latter data represent more bulk like properties we argue that Al in the bulk SiC occupies both, substitutional lattice sites and interstitial sites while in the surface near regions Al is found only at substitutional lattice sites. KW - Photoelectron KW - Spectra KW - 4H-SiC Y1 - 2003 SN - 0921-5107 SN - 1873-4944 VL - 102 IS - 1-3 SP - 284 EP - 288 ER - TY - JOUR A1 - Schmeißer, Dieter T1 - Resonant photoemission at the Pr2O3 /Si(001) interface N2 - In resonant photoemission studies photoelectron spectroscopy (PES) is done at photon ener-giesthat enable the excitation from a deep core hole to the empty conduction band states. Atresonant condition only such states are selectively enhanced which allow an optical couplingof the core hole to the empty conduction band states. Information is to be gained from theshape of the particular resonance and by a comparison of the valence band data at excitationenergies off and on resonance. Such studies provide information on the electronic structure, inparticular how to separate individual contributions in the valence band and conduction bandregime. Y1 - 2003 ER - TY - CHAP A1 - Müller, Klaus A1 - Bär, Werner A1 - Henkel, Karsten A1 - Jahnke, Agnes A1 - Schwiertz, Carola A1 - Schmeißer, Dieter T1 - Organische Feldeffekttransistoren als Transducer in der Biosensorik Y1 - 2003 SN - 3-935712-92-8 SP - 119 EP - 223 PB - w.e.b.-Univ.-Verl. CY - Dresden ER - TY - GEN A1 - Schmeißer, Dieter A1 - Müssig, Hans-Joachim T1 - Stability and electronic properties of silicates in the system SiO2 - Pr2O3 - Si(001) T2 - Journal of Physics: Condensed Matter N2 - Pr2O3 is one of the most promising hetero-oxides that are the candidates of choice to replace SiO2 as the gate dielectric material for sub-0.1 micrometer CMOS technology. In order to enable process integration, however, hetero-oxides require substantial characterization. In particular, the basic interaction mechanisms at the interface to the silicon substrate are the key issues. A solid knowledge of these mechanisms is required to address reliability arguments. The challenges in material science are to understand the chemical bonding of the hetero-oxides and Si on a microscopic scale. We report on the specific variations in the electronic structure which are evident in the valence band features around resonant excitation at the Pr 4d threshold. We also determine the valance band discontinuities at the Pr2O3/Si(001) interface and follow the changes in the surface potentials to develop a band scheme, a prerequisite to understanding the properties of charge transport across that interface. Y1 - 2004 SN - 1361-648X VL - 16 IS - 2 SP - 153 EP - 160 ER - TY - JOUR A1 - Paloumpa, Ioanna A1 - Yfantis, Alexandros D. A1 - Hoffmann, Patrick A1 - Burkov, Yevgen A1 - Yfantis, Alexandros D. A1 - Schmeißer, Dieter T1 - Mechanisms to inhibit corrosion of Al alloys by polymeric conversion coatings N2 - We introduce a recently developed novel polypyrrole-based coating, which can be formed on the aluminium surface from an aqueous pyrrole solution of fluorozirconic and fluorotitanic acid neutralised with zinc oxide. The composite layer consists of polypyrrole (Ppy) chemisorbed on titanium and zinc oxides and exhibits advanced corrosion resistance. For the investigation of the structure and the corrosion mechanism of the composite corrosion resistant layer we use a photo-electron emission microscope (PEEM). PEEM is especially suitable because it can deliver topographic contrast as well as elemental contrast and chemical information in connection with a variable X-ray source. Additionally, in order to investigate further the corrosion mechanism, but also the role of the alloy in the corrosion process, we examine the aluminium samples with SEM/EDX. The structure of the corrosion resistant layer was investigated before and after accelerated corrosion tests. Our results pointed out the important role of titanium oxide and zinc in the corrosion resistance of our Ppy coating on aluminium. KW - Polypyrrole KW - Fluorozirconates KW - Fluorotitanates KW - Aluminium KW - Corrosion Y1 - 2004 ER - TY - GEN A1 - Schmeißer, Dieter A1 - Müssig, Hans-Joachim A1 - Dabrowski, Jarek Marek T1 - Silicate Layer Formation at the Pr2O3 / Si(001) Interfaces T2 - Applied Physics Letters N2 - We studied Pr2O3/Si(001) interfaces by synchrotron radiation photoelectron spectroscopy and by ab initio calculations. We show that the interface formed during molecular-beam epitaxy under the oxygen partial pressure above 1%D710-8 mbar consists of a mixed Si-Pr oxide, such as (Pr2O3)(SiO)x(SiO2)y. Neither an interfacial SiO2 nor an interfacial silicide is formed. The silicate formation is driven by a low energy of O in a PrOSi bond and by the strain in the subsurface SiOx layer. We expect that this natural interfacial Pr silicate will facilitate the integration of the high-k dielectric Pr2O3 into future complementary metal-oxide-semiconductor technologies. Y1 - 2004 SN - 1077-3118 VL - 85 IS - 1 SP - 88 EP - 90 ER - TY - JOUR A1 - Schmeißer, Dieter T1 - Covalent and localized contributions of Pr4f states at the interface of Pr2O3 to Si(001) N2 - Resonant photoelectron spectroscopy (PES) at the Pr4d and O1 s absorption edges is used to study the electronic properties at the interface of epitaxially grown Pr2O3 on Si(001).In the electronic structure of bulk Pr2O3, the valence band (VB) states are predominant of Pr6s and O2p atomic parentage. The contribution of Pr4f states is identified from the strong increase of the VB features at the Pr4d resonances. The data at the O1s edge are caused by Raman scattering and resonant Auger decay and reflect the existence of charge transfer (CT) complexes. These complexes are the consequence of a mixed valency caused by ligand-to-Pr4f charge transfer states. The decrease of their intensity is attributed to an increase in covalent bandwidth between the ligand (O2p, Si3p) and Pr4f states. The CT complexes, originally localized now, become broadened and form gap states which fill the gap towards a metallic density of states. The metallic phase may be hindered upon alloying with SiO2 or other oxides. Y1 - 2004 ER - TY - GEN A1 - Lupina, Grzegorz A1 - Dabrowski, Jarek Marek A1 - Formanek, Peter A1 - Schmeißer, Dieter A1 - Sorge, Roland A1 - Wenger, Christian A1 - Zaumseil, Peter A1 - Müssig, Hans-Joachim T1 - Solid-state reaction between Pr and SiO2 studied by photoelectron spectroscopy and ab initio calculations T2 - Materials Science in Semiconductor Processing N2 - We report on the structural and electrical properties of Pr-based high-k dielectric films fabricated by solid-state reaction between metallic Pr and SiO2 underlayers. A non-destructive depth profiling using synchrotron radiation excited photoelectron spectroscopy (SR-PES), X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM) were employed to examine the chemical composition and microstructure. Ab initio calculations were done to gain insight into the physical processes involved. SR-PES results indicate that Pr deposition at room temperature (RT) leads to the formation of a Pr silicide and a Pr oxide, what is in good agreement with the scenario expected from ab initio calculations. As revealed by TEM and electrical measurements, oxidation of the reacted structures, followed by annealing, results in a stacked dielectric composed of a SiO2-based buffer with an enhanced permittivity and a Pr silicate film with a high dielectric constant. The leakage current density of 10-4 A/cm2 was measured for stacks with capacitance equivalent thickness (CET) of 1.5 nm prepared by evaporation of the Pr layer on a 1.8 nm SiO2 film, followed by oxidation in air ambient and annealing in N2 atmosphere. The capacitance-voltage (C-V) curves exhibit a large flatband voltage (VFB) shift indicating the presence of a positive charge in the stack. Switching away from the Al contacts to Au gate electrodes introduces a significant reduction of the VFB by 1.3 eV, what is much more than the change expected from the work function difference between Al and Au (not, vert, similar0.9 eV). This in turn implies that VFB is strongly affected by the gate interface electrode. KW - High-k dielectrics KW - Photoelectron spectroscopy KW - Interface reaction Y1 - 2004 SN - 1369-8001 VL - 7 IS - 4-6 SP - 215 EP - 220 ER - TY - GEN A1 - Yfantis, Alexandros D. A1 - Tzalas, B. A1 - Lambrakopoulos, S. A1 - Anagnostaki, E. A1 - Schmeißer, Dieter T1 - New chrome free, environmentally friendly methods in chemical processes N2 - It gives an overview of the research work to develop chrom-free methods in different chemical processes. A new class of materials, the conductive polymers, have been studied extensively for their anticorrosion properties. KW - Alloys KW - Polypyrrole KW - Polymers Y1 - 2002 ER - TY - GEN A1 - Lewerenz, Hans-Joachim A1 - Murrell, Chris A1 - Jakubowicz, J. A1 - Aggour, Mohammed A1 - Kanis, M. A1 - Campbell, S. A. A1 - Cox, P. A. A1 - Hoffmann, Patrick A1 - Jungblut, H. A1 - Schmeißer, Dieter T1 - High Resolution Surface analysis of Si Roughenning in Dilute Ammonium Fluoride Solution T2 - Journal of Electroanalytical Chemistry N2 - The initial stages of porous Si formation on Si(111) in dilute ammonium fluoride solution are analysed by photoelectron spectroscopy using synchrotron radiation (SRPES). The PES results in the por-Si formation regime partly support a recent dissolution model. The contribution from the Si 2p surface core level shift shows that 0.35 ML of the surface is still H-terminated after interruption of the conditioning process at the first photocurrent maximum. Two signals shifted in binding energy by 0.8 and 1 eV, respectively, are attributed to reaction intermediates expected from the proposed reaction mechanism and from theoretical calculations using density functional theory (DFT). A distinct roughening is found in in-situ AFM measurements, with a calculated RMS roughness parameter of 2.6 nm. KW - Porous Si KW - transistors KW - Electropolishing KW - Photoelectron spectroscopy KW - AFM KW - Synchrotron radiation Y1 - 2003 SN - 1873-2569 VL - 540 SP - 3 EP - 6 ER - TY - GEN A1 - Appel, Günter A1 - Ade, H. A1 - Gürek, A. G. A1 - Stadler, S. A1 - Mikalo, Ricardo Pablo A1 - Schmeißer, Dieter T1 - Orientation studies of Si-Phthalocyanines sulfonic acids cast on SiOx substrates T2 - Applied Physics / A N2 - Layers of dihydroxy silicon phthalocyanine tetrasulfonic acid and oligo-7-oxo silicon phthalocyanine tetrasulfonic acid were prepared by solution-casting methods. The purity of the material was checked by X-ray photoemission spectroscopy. The orientation of the molecules in respect to the substrate plane was investigated by angle-dependent near-edge X-ray absorption fine-structure spectroscopy. The morphology was characterized by atomic force microscopy. Most samples exhibited a significant orientation that was accompanied by crystalline structures; others had no orientation at all with a dominant amorphous morphology. This behavior indicates that several preparation parameters affect the crystallinity and the orientation of the phthalocyanines. Y1 - 2003 U6 - https://doi.org/10.1007/s003390201320 SN - 1432-0630 VL - 76 IS - 2 SP - 177 EP - 182 ER - TY - GEN A1 - Müller, Klaus A1 - Goryachko, Andriy A1 - Burkov, Yevgen A1 - Schwiertz, Carola A1 - Ratzke, Markus A1 - Köble, J. A1 - Reif, Jürgen A1 - Schmeißer, Dieter T1 - Scanning Kelvin Probe Microscopy and Photoemission electron microscopy of organic source-drain structures T2 - Synthetic Metals N2 - n order to optimize organic field effect transistors (OFETs), the characterisation of active-layer surfaces in terms of their roughness, chemical composition and distribution of surface potentials is important. We report on high-resolution microscopic mapping of organic source-drain structures with P3HT as the semiconductor by scanning Kelvin probe microscopy (SKPM) and photoemission electron microscopy (PEEM). It was shown that PEEM is able to characterise the surface morphology (roughness), the chemical homogeneity and the composition of organic structures. The two-dimensional mapping of surface potentials by SKPM with applied source-drain voltages is shown to be an important ingredient of OFETs failure mode analysis. KW - Photoemission electron microscopy (PEEM) KW - Scanning Kelvin probe microscopy (SKPM) KW - OFET Y1 - 2004 SN - 0379-6779 VL - 146 IS - 3 SP - 377 EP - 382 ER - TY - GEN A1 - Müssig, Hans-Joachim A1 - Dabrowski, Jarek Marek A1 - Wenger, Christian A1 - Lupina, Grzegorz A1 - Sorge, Roland A1 - Formanek, Peter A1 - Zaumseil, Peter A1 - Schmeißer, Dieter T1 - Ultrathin Dielectric Films Grown by Solid Phase Reaction of Pr with SiO2 T2 - MRS Proceedings Y1 - 2004 SN - 1946-4274 VL - 811 ER - TY - GEN A1 - Schmeißer, Dieter A1 - Müssig, Hans-Joachim T1 - Pr4f occupancy and VB/CB band offsets of Pr2O3 at the interface to Si(001) and SiC(0001) surfaces T2 - MRS Proceedings Y1 - 2004 SN - 1946-4274 VL - 811 ER - TY - JOUR A1 - Hoffmann, Patrick A1 - Schmeißer, Dieter A1 - Soinski, M. S. T1 - Promieniowanie synchrotronowe jako uniwersalne narzedzie badawcze - Proby jego wykorzystania w badaniach struktury zeliwa Y1 - 2004 ER - TY - GEN A1 - Yfantis, Alexandros D. A1 - Paloumpa, Ioanna A1 - Schmeißer, Dieter ED - Kainer, Karl Ulrich T1 - Corrosion Protection by Conductive Polymers for Magnesium Alloys T2 - Magnesium, proceedings of the 6th International Conference on Magnesium Alloys and their Applications, November 2003 in Wolfsburg N2 - In this work, we present the experimental data related to the effect of the polypyrrole concentration and the film thickness on the corrosion inhibition properties of these novel polymer coatings. The relative corrosion resistance properties of the films formed from the matrix solutions, where polypyrrole was in situ polymerized and in cases where polypyrrole is dispersed in a form of powder (pigment) in the polyaclylic polymer, are further examined. The evaluation of the experimental data provides significant evidence regarding the mechanism of corrosion inhibition, as well as the optimization of the synthesis and application conditions. KW - corrosion protection KW - conductive polymers for magnesium alloys KW - polypyrrole Y1 - 2004 SN - 3-527-30975-6 SP - 605 EP - 610 PB - Wiley-VCH CY - Weinheim ER - TY - CHAP A1 - Sidorenko, Alexander A1 - Tokarev, Igor A1 - Krenek, Radim A1 - Burkov, Yevgen A1 - Schmeißer, Dieter A1 - Minko, S. A1 - Stamm, Manfred ED - Champion, Yannick ED - Fecht, Hans-Jörg T1 - Generation of Nanostructured Materials from Thin Films of Block Copolymer Assembles T2 - Nano-architectured and manostructured materials, fabrication, control and properties, EUROMAT 2003 Y1 - 2004 SN - 3-527-31008-8 SP - 143 EP - 150 PB - Wiley-VCH CY - Weinheim ER - TY - GEN A1 - Tokarev, Igor A1 - Krenek, Radim A1 - Burkov, Yevgen A1 - Schmeißer, Dieter A1 - Sidorenko, Alexander A1 - Minko, Sergiy A1 - Stamm, Manfred T1 - Microphase separation in thin films of poly(styrene-block-4-vinylpyridine) Copolymer-2-(4-Hydroxybenzeneazo) benzoic Acid Assembly T2 - Macromolecules N2 - The fine structure of thin films of poly(styrene-block-4-vinylpyridine) copolymer-2-(4'-hydroxybenzeneazo)benzoic acid (PS-PVP+HABA) assembly has been studied using the combination of atomic force microscopy, ellipsometry, X-ray reflectivity, GISAXS, XPS, and XPEEM. The films consist of cylindrical nanodomains formed by PVP+HABA associates surrounded by PS matrix. Alignment of the domains can be switched upon exposure to vapors of different solvents from the parallel to perpendicular orientation and vice versa with respect to the surface plane. Swelling in 1,4-dioxane leads the system from the cylindrical to the spherical morphology. Solvent evaporation results in a shrinkage of the matrix in the vertical direction and subsequent merging of the spheres into the perpendicularly aligned cylinders. The cylinders form a regular hexagonal lattice with a spatial period of 25.5 nm. On the other hand, vapors of chloroform induce in-plane alignment. The films consist of parallel layers of the cylinders separated by PS matrix and demonstrate the fingerprint-like structure. The nanocylinders of PVP+HABA are packed into a distorted hexagonal lattice exhibiting 31 nm in plane and 17 nm vertical periodicity. In both cases a thin wetting layer is found at the polymer-substrate interface. The free surface is enriched with PS. Y1 - 2005 SN - 1520-5835 VL - 38 IS - 2 SP - 507 EP - 516 ER - TY - CHAP A1 - Henkel, Karsten A1 - Schwiertz, Carola A1 - Wagner, S. A1 - Valdeig, A. A1 - List, M. A1 - Schmeißer, Dieter T1 - Partikel- und Tropfendetektion im Mikrometerbereich mittels Schwingquarzen Y1 - 2003 SN - 3-935712-92-8 SP - 291 EP - 294 PB - w.e.b.-Univ.-Verl. CY - Dresden ER - TY - GEN A1 - Lamprakopoulos, Stelios A1 - Schmeißer, Dieter A1 - Anastassopoulou, Jane A1 - Theophanides, Theophile A1 - Yfantis, Alexandros D. T1 - An FTIR study of the role of H2O and D2O in the aging mechanism of conductive polypyrroles T2 - Synthetic Metals N2 - In the present work the role of H2O was studied by conductivity measurements and FTIR spectroscopy using the isotopic effect of deuterium in order to elucidate the aging mechanism of conductivity of polypyrroles. Polypyrrole was prepared with PTS as a dopant, by using deuterated water. Conductivity measurements showed changes due to structural water and atmospheric humidity. The FTIR absorption spectra indicated that the most probable structure of polypyrrole is the two-dimensional one. This finding could be attributed to the inhibition of polypyrrole's IR modes. The infrared spectrum analysis show that the gamma -NH bending mode of pyrrole has significantly changed after polymerization of pyrrole and this result is in accordance with XPS measurements. KW - Polypyrrole KW - Conductivity KW - FTIR KW - Isotopic effect Y1 - 2004 U6 - https://doi.org/10.1016/j.synthmet.2004.03.006 SN - 0379-6779 VL - 144 IS - 3 SP - 229 EP - 234 ER - TY - JOUR A1 - Schmeißer, Dieter T1 - Pr2O3/Si(001) interface reactions and stability N2 - We show that an interfacial silicate is formed in a natural way between Si(0 0 1) and the deposited Pr2O3 film if a sufficient amount of oxygen is provided during deposition, as during electron beam evaporation from Pr6O11 source. We provide arguments from results of ab initio calculations and we present a ternary phase diagram of the Pr-O-Si system obtained for epitaxial films from non-destructive depth profiling data acquired by synchrotron radiation and photoelectron spectroscopy (SR-PES) at the undulator beam line U49/2-PGM2. The composition of the interfacial layer is (Pr2O3)(SiO)x(SiO2)y, with x+y between 2 and 6 and depends on the growth condition and distance from the substrate. No interfacial SiO2 and no interfacial silicide is formed during growth. The ternary phase diagram indicates that this non-stoichiometric pseudobinary alloy is stable on Si up to high temperatures, without phase separation into Pr2O3 and SiO2. Therefore, a complete re-engineering of the CMOS process may be not necessary. KW - High-k-material KW - Pr2O3/Si(0 0 1) interface KW - Photoelectron spectroscopy KW - Ab initio calculations KW - CMOS Y1 - 2004 ER - TY - GEN A1 - Sidorenko, Alexander A1 - Tokarev, Igor A1 - Krenek, Radim A1 - Burkov, Yevgen A1 - Schmeißer, Dieter A1 - Stamm, Manfred T1 - XPEEM investigations of 2D hierachical array of Ni nanorods using block copolymer templates Y1 - 2004 ER - TY - JOUR A1 - Schmeißer, Dieter T1 - Cooper minimum observed for the Pr5s and Pr5p states in Pr2O3 Y1 - 2004 ER - TY - CHAP A1 - Schmeißer, Dieter A1 - Lupina, Grzegorz A1 - Müssig, Hans-Joachim T1 - High reactivity of Pr on oxide covered 4H-SiC T2 - Bessy annual report 2003 Y1 - 2004 SP - 408 EP - 409 PB - Bessy CY - Berlin ER - TY - JOUR A1 - Schmeißer, Dieter T1 - Interface reactivity of Pr and SiO2 at 4H-SiC(0001) N2 - We use photoelectron spectroscopy to characterize the reactivity of Pr evaporated on SiO2 covered 4H-SiC substrates. We analyze the Si2p, C1s, and O1s core levels and find that Pr reacts at RT with the SiO2 layer to form Pr-silicate. In addition also Pr-silizide is formed as well as Pr-carbides. While the latter are formed as reaction intermediates after Pr evaporation, the Pr-silicate layer is formed upon annealing to 300 °C and is stable up to 800 °C. KW - Photoelectron spectroscopy KW - 4H-SiC KW - Interface reactivity KW - High-k dielectric layer Y1 - 2005 ER - TY - JOUR A1 - Schmeißer, Dieter T1 - Pr4f occupancy and origin of gap states at the Pr2O3 / Si (001) interface Y1 - 2005 ER - TY - JOUR A1 - Seifarth, Olaf A1 - Burkov, Yevgen A1 - Goryachko, Andriy A1 - Schmeißer, Dieter A1 - Sydorenko, Alexander A1 - Krenek, Radim A1 - Stamm, Manfred T1 - Photoelectron spectroscopy and microscopy on Cr nano particels embedded into block copolymers Y1 - 2005 ER - TY - CHAP A1 - Schmeißer, Dieter A1 - Müssig, Hans-Joachim T1 - Pr-silicate formation on SiO2 covered 3C-SiC(111) T2 - Physics of semiconductors, 27th International Conference on the Physics of Semiconductors Y1 - 2005 SN - 0-7354-0257-4 SP - 75 EP - 76 PB - AIP, American Inst. of Physics CY - New York, NY ER - TY - JOUR A1 - Wehner, Stefan A1 - Schmeißer, Dieter A1 - Hoffmann, Patrick T1 - Spatiotemporal patterns of external noise-induced transitions in a bistable reaction-diffusion system : Photoelectron Emission Microscopy experiments and modeling Y1 - 2005 ER - TY - GEN A1 - Lupina, Grzegorz A1 - Schroeder, Thomas A1 - Dabrowski, Jarek Marek A1 - Schmeißer, Dieter A1 - Hoffmann, Patrick T1 - Praseodymium silicate layers with atomically abrupt interface on Si(100) T2 - Applied Physics Letters Y1 - 2005 SN - 0003-6951 VL - 87 IS - 5 ER - TY - JOUR A1 - Goryachko, Andriy A1 - Yeromenko, Y. A1 - Henkel, Karsten A1 - Wollweber, Jürgen A1 - Schmeißer, Dieter T1 - The Si(001)/C2H2 interaction to form a buffer layer for 3C-SiC growth JF - Physica status solidi / A N2 - The intial stages of Si(001) interaction with C2H2 were investigated with XPS and surface profilometry. The carbon enriched layer serves as a buffer between Si substrate and the 3C-SiC film aimed at growing on Si(001). Such parameters as substrate temperature and process duration come into a complicated interplay of C deposition, its reaction with Si and out-diffusion of the later from the substrate. Three distinct regimes, namely graphite dominated, carbide dominated and roughness dominated are found to result from this interplay. Y1 - 2004 SN - 0031-8965 VL - 201 IS - 2 SP - 245 EP - 248 ER - TY - JOUR A1 - Goryachko, Andriy A1 - Paloumpa, Ioanna A1 - Beuckert, Guido A1 - Burkov, Yevgen A1 - Schmeißer, Dieter T1 - The Interaction of Pr2O3 with 4H-SiC(0001)surface JF - Physica status solidi / C N2 - Praseodymium oxide (Pr2O3) as a hetero-oxide on SiC(0001) represents a promising semiconductor / high-K dielectric material combination. We prepared thin films (<3 nm) of Pr2O3 on 4H-SiC(0001) surfaces by a wet chemical process involving aqueous solutions of Pr(NO3)3. Synchrotron radiation photoelectron spectroscopy (SR-PES) is used to study the chemical composition of these films after deposition and annealing in 300-900 %B0C range. The Si2p and C1s core level emissions are analysed in detail and reveal that praseodymium-silicate is formed at the interface. Our data are compared to corresponding studies of the Pr2O3 interaction with Si(001) surfaces. Y1 - 2004 SN - 1610-1634 VL - 1 IS - 2 SP - 265 EP - 268 ER - TY - GEN A1 - Müller, Klaus A1 - Paloumpa, Ioanna A1 - Henkel, Karsten A1 - Schmeißer, Dieter T1 - A polymer high-k dielectric insulator for organic field effect Transistors T2 - Journal of Applied Physics Y1 - 2005 SN - 0021-8979 VL - 98 IS - 5 SP - S. 056104 ER - TY - GEN A1 - Henkel, Karsten A1 - Sohal, Rakesh A1 - Torche, Mohamed A1 - Paloumpa, Ioanna A1 - Müller, Klaus A1 - Hoffmann, Patrick A1 - Schmeißer, Dieter T1 - Grenzflächenoptimierung für funktionale Dünnschichtsysteme: Oxide und Polymere T2 - Forum der Forschung Y1 - 2005 SN - 0947-6989 VL - 9 IS - 18 SP - 49 EP - 56 ER - TY - GEN A1 - Schmeißer, Dieter A1 - Himpsel, Franz J. A1 - Denlinger, Jonathan D. A1 - Ederer, David L. T1 - Resonante Photoemission an der Cu2p Kante von Cu und CuO T2 - Forum der Forschung Y1 - 2005 SN - 0947-6989 VL - 9 IS - 18 SP - 57 EP - 62 ER - TY - CHAP A1 - Schmeißer, Dieter A1 - Hoffmann, Patrick A1 - Beuckert, Guido ED - Zschech, Ehrenfried ED - Whelan, Caroline T1 - Electronic Properties of the Interface Formed by Pr2o3 Growth on Si(001), Si(111)and SiC(0001) Surfaces Y1 - 2005 ER - TY - JOUR A1 - Müller, Klaus A1 - Scheer, R. A1 - Schmeißer, Dieter A1 - Burkov, Yevgen T1 - Preparation of stoichiometric CuInS2-Surfaces JF - Thin Solid Films KW - preparation Y1 - 2004 SN - 0040-6090 VL - 451–452 SP - 120 EP - 123 ER - TY - JOUR A1 - Müller, Klaus A1 - Burkov, Yevgen A1 - Schmeißer, Dieter T1 - Photo-Emission-Electron-Microscopy for Characterization of an Operating Organic Electronic Device KW - photo-emission-electron-microscopy Y1 - 2006 ER - TY - GEN A1 - Hoffmann, Patrick A1 - Schmeißer, Dieter T1 - Improvement of Nitrogen Incorporation into Oxynitrides on 4H-SiC(0001) T2 - Nuclear Instruments and Methods in Physics Research, Section B : Beam with Materials and Atoms Y1 - 2006 VL - 246 IS - 1 SP - 85 EP - 89 ER - TY - CHAP A1 - Schmeißer, Dieter T1 - Chemical Bonding in Low-k Dielectric Materials for Interconnect Isolation: Characterization using XAS and EELS KW - XAS KW - EELS KW - low-k Materials Y1 - 2006 ER - TY - JOUR A1 - Schmeißer, Dieter T1 - The Consequences of anisotropic Diffusion and Noise: PEEM at the CO Oxidation Reaction on Stepped Ir(111) Surfaces KW - Ir(111) Surfaces Y1 - 2006 ER - TY - JOUR A1 - Müller, Klaus A1 - Paloumpa, Ioanna A1 - Schmeißer, Dieter A1 - Henkel, Karsten T1 - Organic thin film transistors with polymer high-k dielectric insulator KW - high-k Y1 - 2006 ER - TY - GEN A1 - Seifarth, Olaf A1 - Schmeißer, Dieter A1 - Stamm, Manfred A1 - Krenek, Radim A1 - Sydorenko, Alexander T1 - Electron spectroscopy and microscopy on chromium oxide nanowires on templated block copolymers T2 - Progress in Solid State Chemistry KW - copolymers KW - nanowires Y1 - 2006 SN - 0079-6786 VL - 34 IS - 2-4 SP - 111 EP - 119 ER - TY - CHAP A1 - Hoffmann, Patrick A1 - Schmeißer, Dieter A1 - Engelmann, Hans-Jürgen A1 - Zschech, Ehrenfried A1 - Stegmann, Heiko A1 - Himpsel, Franz J. A1 - Denlinger, Jonathan D. ED - Tsui, Ting Y. T1 - Characterization of chemical bonding in low-k dielectric materials for interconnect isolation: A XAS and EELS Study T2 - Materials, technology and reliability of low-k dielectrics and copper interconnects, symposium held April 18 - 21, 2006, San Francisco, California Y1 - 2006 SN - 978-1-55899-870-5 SP - 55 EP - 62 PB - Materials Research Society CY - Warrendale, Pa. ER - TY - CHAP A1 - Schmeißer, Dieter A1 - Zheng, Fan A1 - Perez-Dieste, Virginia T1 - Silicate Formation at the Interface of Pr-Oxide as a High-K Dielectric and Si(001) surfaces Y1 - 2006 ER - TY - CHAP A1 - Domaradzki, Jarosław A1 - Schmeißer, Dieter A1 - Kaczmarek, Danuta A1 - Beuckert, Guido A1 - Prociow, E. L. A1 - Borkowska, Angnieszka A1 - Kudrawiec, Robert A1 - Misiewicz, J. T1 - Characterization of Nanocrystalline TiO2 - HfO2 Thin Films Prepared by Low Pressure Hot Target Reactive Magnetron Sputtering Y1 - 2006 ER - TY - JOUR A1 - Domaradzki, Jarosław A1 - Kaczmarek, Danuta A1 - Schmeißer, Dieter A1 - Beuckert, Guido T1 - Microstructure and Optical Properties of TiO2 Thin Films Prepared by Low Pressure Hot Target Reactive Magnetron Sputtering Y1 - 2006 ER - TY - CHAP A1 - Schmeißer, Dieter A1 - Zheng, Fan A1 - Himpsel, Franz J. A1 - Engelmann, Hans-Jürgen A1 - Zschech, Ehrenfried T1 - Silicate Formation at the Interface of High-k Dielectrics and Si(001) Surfaces Y1 - 2006 ER - TY - CHAP A1 - Zschech, Ehrenfried A1 - Stegmann, Heiko A1 - Schmeißer, Dieter A1 - Hoffmann, Patrick T1 - Chemical Bonding, Permittivity, and Elastic Properties in Locally Modified Organosilicate Glass Y1 - 2006 ER - TY - JOUR A1 - Hoffmann, Patrick A1 - Wehner, Stefan A1 - Schmeißer, Dieter T1 - Noise-Induced Spatiotemporal Patterns in a Bistable Reaction-Diffusion System: Photoelectron Emission Microscopy experiments and Modeling of the CO Oxidation Reaction on Ir(111) Y1 - 2006 ER - TY - JOUR A1 - Schmitt, Andrew L. A1 - Bierman, Matthew J. A1 - Schmeißer, Dieter A1 - Himpsel, Franz J. A1 - Jin, Song T1 - Synthesis and Properties of Single-Crystal FeSi Nanowires Y1 - 2006 ER - TY - JOUR A1 - Schmitt, Andrew L. A1 - Zhu, Lei A1 - Schmeißer, Dieter A1 - Himpsel, Franz J. A1 - Jin, Song T1 - Metallic Single-Crystal CoSi Nanowires via Chemical Vapor Deposition of Single-Source Precursor Y1 - 2006 ER - TY - JOUR A1 - Lupina, Grzegorz A1 - Schroeder, Thomas A1 - Schmeißer, Dieter A1 - Dabrowski, Jarek Marek T1 - Praseodymium Silicate Films on Si(100) for Gate Dielectric Applications: Physical and Electrical Characterization Y1 - 2006 ER - TY - CHAP A1 - Tallarida, Massimo A1 - Schmeißer, Dieter A1 - Zheng, Fan T1 - X-ray Absorption and Photoemission Spectroscopy of 3C- and 4H-SiC Y1 - 2006 ER - TY - CHAP A1 - Tallarida, Massimo A1 - Sohal, Rakesh A1 - Schmeißer, Dieter T1 - Resonant photoemission at the oxygen K edge as a tool to study the electronic properties of defects at SiO2/Si and SiO2/SiC interfaces Y1 - 2006 ER - TY - JOUR A1 - Schmeißer, Dieter A1 - Zschech, Ehrenfried T1 - Silicate Formation at the Interface of Hf-Oxide and Pr-Oxide as a High-k Dielectric and Si(001) surfaces Y1 - 2006 ER - TY - CHAP A1 - Sohal, Rakesh A1 - Torche, Mohamed A1 - Schmeißer, Dieter T1 - Al-Oxynitrides as a Buffer Layer for Pr2O3/SiC Interfaces Y1 - 2006 ER - TY - JOUR A1 - Torche, Mohamed A1 - Henkel, Karsten A1 - Schmeißer, Dieter T1 - The interaction of Al, Ag, Au and Ti to Pr2O3 thin film dielectrics KW - thin films KW - Pr2O3 Y1 - 2006 ER - TY - GEN A1 - Seifarth, Olaf A1 - Burkov, Yevgen A1 - Schmeißer, Dieter A1 - Stamm, Manfred T1 - Metallic nickel nanorod arrays embedded into ordered block copolymer templates T2 - Thin Solid Films Y1 - 2007 SN - 0040-6090 VL - 515 IS - 16 SP - 6552 EP - 6556 ER - TY - GEN A1 - Schroeder, Thomas A1 - Lupina, Grzegorz A1 - Seifarth, Olaf A1 - Tallarida, Massimo A1 - Schmeißer, Dieter T1 - Synchrotron radiation x-ray photoelectron spectroscopy study on the interface chemistry of high-k PrxAl2-xO3 (x=0-2) dielectrics on TiN for dynamic random access memory applications T2 - Journal of Applied Physics Y1 - 2007 SN - 0021-8979 VL - 102 IS - 1 SP - 014103 ER - TY - JOUR A1 - Henkel, Karsten A1 - Sohal, Rakesh A1 - Schmeißer, Dieter A1 - Schwiertz, Carola A1 - Burkov, Yevgen A1 - Torche, Mohamed T1 - Al-oxynitride buffer layer facilities for PrOx/SiC interfaces Y1 - 2007 ER - TY - JOUR A1 - Müller, Klaus A1 - Henkel, Karsten A1 - Schmeißer, Dieter T1 - Organic field effect transistors with ferroelectric hysteresis Y1 - 2007 ER - TY - JOUR A1 - Müller, Klaus A1 - Mandal, Dipankar A1 - Schmeißer, Dieter T1 - No interfacial layer for PEDOT electrodes on PVDF: Characterization of reactions at the interface P(VDF/TrFE)/Al and P(VDF/TrFE)/PEDOT:PSS Y1 - 2007 ER - TY - JOUR A1 - Schmeißer, Dieter A1 - Bierman, Matthew J. T1 - Ferromagnetic Semiconducting EuO Nanorods Y1 - 2007 ER - TY - CHAP A1 - Schmeißer, Dieter A1 - Wehner, Stefan A1 - Hoffmann, Patrick A1 - Brand, Helmut R. A1 - Küppers, Jürgen ED - Descalzi, Orazio T1 - Influence of the Substrate on the Pattern Formation of a Surface Reaction T2 - Nonequilibrium statistical mechanics and nonlinear physics, XV Conference on Nonequilibrium Statistical Mechanics and Nonlinear Physics, Mar del Plata, Argentina, 4 - 8 December 2006 Y1 - 2007 SN - 978-0-7354-0421-2 SP - 121 EP - 126 PB - AIP Publishing CY - Melville, New York ER - TY - JOUR A1 - Müller, Sebastian A1 - Seibold, Götz A1 - Schmeißer, Dieter ED - Vierhaus, Heinrich Theodor T1 - Preparation and Characterization of TiO2 Thin Films and Cr and Co Doped TiO2 Thin Films Y1 - 2007 ER - TY - GEN A1 - Tallarida, Massimo A1 - Schmeißer, Dieter T1 - Study of Bulk and Interface Defects in Silicon Oxide with X-ray Absorption Spectroscopy T2 - Materials Science and Engineering : B Y1 - 2007 SN - 0921-5107 VL - 144 IS - 1-3 SP - 23 EP - 26 ER - TY - JOUR A1 - Beck, Romuald B. A1 - Hoffmann, Patrick A1 - Schmeißer, Dieter A1 - Bieniek, Tomasz A1 - Jakubowski, Andrzej T1 - Composition and Electrical Properties of Ultra-Thin SiOxNy Layers Formed by rf Plasma Nitrogen Implantation/Plasma Oxidation Processes Y1 - 2007 ER - TY - JOUR A1 - Mroczynski, Robert A1 - Hoffmann, Patrick A1 - Schmeißer, Dieter T1 - The Influence of Annealing (900 Grad C) of Ultra-Thin PECVD Silicon Oxynitride Layers Y1 - 2007 ER - TY - JOUR A1 - Schmeißer, Dieter A1 - Mroczynski, Robert A1 - Bieniek, Tomasz T1 - Comparison of Composition of Ultra-Thin Silicon Oxynitride Layers´ fabricated by PECVD and Ultrashallow rf Plasma Ion Implantation Y1 - 2007 ER - TY - JOUR A1 - Schmeißer, Dieter A1 - Burkov, Yevgen A1 - Paloumpa, Ioanna A1 - Mandal, Dipankar A1 - Henkel, Karsten T1 - Microscopic and Spectroscopic Characterization of Interfaces and Dielectric Layers for OFET Devices Y1 - 2008 ER - TY - JOUR A1 - Schmeißer, Dieter A1 - Henkel, Karsten A1 - Karavaev, Konstantin T1 - Al-Oxynitride Interfacial Layer Investigations for PrxOy on SiC and Si Y1 - 2008 ER - TY - JOUR A1 - Schmeißer, Dieter A1 - Domaradzki, Jarosław A1 - Kaczmarek, Danuta A1 - Borkowska, Angnieszka A1 - Müller, Sebastian T1 - Influence of Annealing on the Structure and Stoichiometry of Europium-Doped Titanium Dioxide Thin Films Y1 - 2008 ER - TY - GEN A1 - Schmeißer, Dieter A1 - Müller, S. A1 - Seifarth, Olaf A1 - Dabrowski, Jarek Marek A1 - Müssig, Hans-Joachim A1 - Schroeder, Thomas T1 - On the band gaps and electronic structure of thin single crystalline praseodymium oxide layers on Si(111) T2 - Journal of vacuum science & technology / B KW - band gabs KW - electronic structure KW - oxide layers Y1 - 2009 VL - 27 IS - 1 SP - 271 EP - 276 ER - TY - GEN A1 - Henkel, Karsten A1 - Torche, Mohamed A1 - Sohal, Rakesh A1 - Karavaev, Konstantin A1 - Burkov, Yevgen A1 - Schwiertz, Carola A1 - Schmeißer, Dieter T1 - Pr-O-Al-N dielectrics for metal insulator semiconductor stacks KW - semiconductor KW - dielectric Y1 - 2011 ER - TY - GEN A1 - Müller, Klaus A1 - Henkel, Karsten A1 - Mandal, Dipankar A1 - Seime, Bernd A1 - Paloumpa, Ioanna A1 - Schmeißer, Dieter T1 - Spin coated organic ferroelectric films for non volatile memories KW - organic KW - ferroelectric Y1 - 2011 ER - TY - GEN A1 - Seifarth, Olaf A1 - Schubert, Markus Andreas A1 - Giussani, A. A1 - Klenov, D. O. A1 - Schmeißer, Dieter A1 - Schroeder, Thomas T1 - Single crystalline Pr2-xYxO3 (x=0-2)dielectrics on Si with tailored electronic and crystallographic structure KW - crystalline KW - dielectric KW - structure Y1 - 2010 SN - 1089-7550 VL - 108 IS - 10 SP - 103709 ER - TY - GEN A1 - Mandal, Dipankar A1 - Henkel, Karsten A1 - Müller, Klaus A1 - Schmeißer, Dieter T1 - Band gab determination of P(VDF-TrFE) copolymer film by electron energy loss spectroscopy Y1 - 2010 ER - TY - GEN A1 - Sioncke, Sonja A1 - Lin, Hang-Chu A1 - Brammertz, Guy A1 - Delabie, Annelies A1 - Conard, Thierry A1 - Franquet, Alexis A1 - Caymax, Matty A1 - Meuris, Marc A1 - Schmeißer, Dieter A1 - Tallarida, Massimo T1 - ALD on high mobility channels: engineering the proper gate stack passivation T2 - ECS Transactions KW - ALD KW - engineering KW - gate stack KW - passivation Y1 - 2010 SN - 1938-5862 VL - 33 IS - 2 SP - 9 EP - 23 ER - TY - GEN A1 - Kolanek, Krzysztof A1 - Tallarida, Massimo A1 - Karavaev, Konstantin A1 - Schmeißer, Dieter T1 - In situ studies of the atomic layer deposition of thin HfO2 dielectrics by ultra high vacuum atomic force microscope KW - in situ KW - atomic layer deposition KW - dielectric KW - microscope Y1 - 2010 ER - TY - GEN A1 - Ho, Paul S. A1 - Zschech, Ehrenfried A1 - Schmeißer, Dieter A1 - Meyer, Moritz Andreas A1 - Huebner, Rene A1 - Hauschildt, Meike A1 - Zhang, Lijuan A1 - Gall, Martin A1 - Kraatz, Matthias T1 - Scaling effects on microstructure and reliability for cu interconnects KW - scaling KW - microstructure KW - interconnects Y1 - 2010 ER - TY - GEN A1 - Wehner, Stefan A1 - Karpitschka, Stefan A1 - Burkov, Yevgen A1 - Schmeißer, Dieter A1 - Küppers, Jürgen A1 - Brand, Helmut R. T1 - Stochastic aspects of pattern formation during the catalytic oxidation of CO on Pd(111) KW - stochastic KW - pattern KW - catalytic oxidation Y1 - 2010 ER - TY - GEN A1 - Henkel, Karsten A1 - Seime, Bernd A1 - Paloumpa, Ioanna A1 - Müller, Klaus A1 - Schmeißer, Dieter T1 - Buffer layer incestigaions on MFIS capacitors consisting of ferroelectric poly[vinylidene fluoride trifluoroethylene] T2 - IOP conference series : Materials Science and Engineering KW - MFIS capacitors KW - ferroelectric Y1 - 2010 SN - 1757-899X VL - 8 IS - 1 SP - 012036 ER - TY - GEN A1 - Schmeißer, Dieter A1 - Henkel, Karsten A1 - Bergholz, Matthias A1 - Tallarida, Massimo T1 - The band gab and band offset in ultrathin oxide-semiconductor heterostructures KW - band gab KW - offset KW - ultrathin KW - heterostructures Y1 - 2010 ER - TY - CHAP A1 - Müller, Sebastian A1 - Schmeißer, Dieter T1 - Synchrotron radiation spectroscopy studies of ultrathin chromium films on titanium dioxide T2 - International Students and Young Scientists Workshop "Photonics and Microsystems", 2009, 25 - 27 June 2009, Harz University, Wernigerode, Germany KW - synchrotron KW - radiation KW - spectroscopy KW - ultrathin KW - titanium KW - chromium Y1 - 2009 SN - 978-1-4244-4303-1 SP - 64 EP - 68 PB - IEEE CY - Piscataway, NJ ER - TY - CHAP A1 - Kolanek, Krzysztof A1 - Tallarida, Massimo A1 - Karavaev, Konstantin A1 - Schmeißer, Dieter T1 - In situ measurements of the atomic layer deposition of high-k dielectrics by atomic force microscope for advanced microsystems T2 - International Students and Young Scientists Workshop "Photonics and Microsystems", 2009, 25 - 27 June 2009, Harz University, Wernigerode, Germany KW - atomic layer deposition KW - microsystems KW - high-k dielectrics Y1 - 2009 SN - 978-1-4244-4303-1 SP - 47 EP - 51 PB - IEEE CY - Piscataway, NJ ER - TY - CHAP A1 - Klocek, Jolanta A1 - Friedrich, Daniel A1 - Schmeißer, Dieter A1 - Hecker, Michael A1 - Zschech, Ehrenfried T1 - The stability of C60 and its derivatives upon handling in microsystems technologies T2 - International Students and Young Scientists Workshop "Photonics and Microsystems", 2009, 25 - 27 June 2009, Harz University, Wernigerode, Germany KW - c60 KW - derivatices Y1 - 2009 SN - 978-1-4244-4303-1 SP - 43 EP - 46 PB - IEEE CY - Piscataway, NJ ER - TY - CHAP A1 - Tallarida, Massimo A1 - Karavaev, Konstantin A1 - Kolanek, Krzysztof A1 - Schmeißer, Dieter T1 - Nobel "in-situ2" Approach to Modified ALD Processes for Nano-functional Metals Oxide Films KW - in-situ2 KW - ALD KW - nano-functional Y1 - 2009 ER - TY - CHAP A1 - Schwiertz, Carola A1 - Henkel, Karsten A1 - Blei, S. A1 - Heidenreich, R. A1 - Schmeißer, Dieter T1 - Nachweis von Aerosolen (<1µm) mit Schwingquarzimpedanzspektroskopie KW - Schwingquarzimpedanzspektroskopie Y1 - 2009 ER - TY - GEN A1 - Zschech, Ehrenfried A1 - Ho, O. S. A1 - Schmeißer, Dieter A1 - Meyer, Moritz Andreas A1 - Vairagar, A. V. A1 - Schneider, G. A1 - Hauschildt, Meike A1 - Kraatz, Matthias A1 - Sukharev, V. T1 - Geometry and Microstructure Effect on EM-Induced Copper Interconnect Degradation T2 - IEEE Transactions on Device and Materials Reliability KW - Microstructure Y1 - 2009 UR - http://ieeexplore.ieee.org/xpls/icp.jsp?arnumber=4796372 SN - 1530-4388 VL - 9 IS - 1 SP - 20 EP - 30 ER -