TY - JOUR A1 - Müller, Klaus A1 - Hoffmann, Patrick A1 - Milko, S. A1 - Burkov, Yevgen A1 - Schmeißer, Dieter T1 - PEEM and µ-NEXAFS of Cu-In-S-Surfaces N2 - The composition of CuInS2-films tends to differ from the ideal ratio of 1:1:2. A molecularlyvariation of dm=[Cu]/[In]-1 not equal 0 occurs due to the formation of binary phases as segregation's at the surface, as crystallites in the bulk of the film or at the surface of grains [1]. Furthermore, the range of homogeneity of the phase CuInS2 is relatively large caused by a low enthalpy of formation of defects like Cu-vacancies [2]. Segregation's at surfaces can be removed by KCN etching or by an electrochemical process [3, 4] We investigated the effect of an in-situ-heat-treatment of samples, prepared in the Cu-rich regime with additional amounts of copper, deposited on the surface of the Cu-In-S-films.We used Cu-In-S-films on molybdenum, prepared from precursors of Cu/In and a following reactive annealing-process in a sulphur-atmosphere. The experiments were performed as follows: The surface of the films was cleaned in situ to remove CuS-Phases by Argon-bombardment. The thin layers of additional Copper were prepared by evaporation of copper metal in Knudsen-cells. The thickness of this copper-films is in the range of monolayers, revealed by a calibration with copper on iron-substrates. After this deposition the samples were heated up to several temperatures (up to 550 ºC) for ten minutes, respectively. Here the molybdenum back-contact was used as electrical heater. Y1 - 2002 ER - TY - JOUR A1 - Batchelor, David R. A1 - Hoffmann, Patrick A1 - Schmeißer, Dieter T1 - Photoemission study of Aluminium Steel cold welded joints N2 - Aluminium and Stainless Steel bi-metal material is extremely versatile and is used in a wide range of products; from cooking utensils to high technology applications such as automobile manufacture and Synchrotron radiation instrumentation. As a consequence of this wide range of applications the study of the formation of Aluminium Steel junctions and the bonding mechanism is of considerable industrialimportance [1-3].In a previous publication [4] evidence for a chemical bond, alloying at the interface was found. As the monochromator focus and welded region are similar in size about 200 µm (the actual interface from SEM is an order of magnitude smaller) a simple photoemission experiment of translating the sample perpendicular (vertically, weld horizontal) to the weld and measuring spectra was performed. Y1 - 2002 ER - TY - JOUR A1 - Jäckel, B. A1 - Thißen, A. A1 - Hunger, Ralf A1 - Klein, A. A1 - Jaegermann, Wolfram A1 - Hoffmann, Patrick A1 - Schmeißer, Dieter T1 - Focus IS-PEEM investigations at U49/II: experimental determination of a magnification function, the contrast mechanism and the spectral resolution Y1 - 2002 ER - TY - CHAP A1 - Schmeißer, Dieter A1 - Hoffmann, Patrick A1 - Müssig, Hans-Joachim T1 - The Pr2O3/Si(001) interface: a mixed Si-Proxide T2 - BESSY annual report 2001 Y1 - 2002 SP - 171 EP - 173 PB - Bessy CY - Berlin ER - TY - JOUR A1 - Schmeißer, Dieter A1 - Hoffmann, Patrick T1 - Characterisation of the PrOx/Si(001) Interface by Photoelectron Spectroscopy Y1 - 2002 ER - TY - JOUR A1 - Seyller, Th. A1 - Sieber, N. A1 - Graupner, R. A1 - James, D. A1 - Riley, J. A1 - Leckey, R. A1 - Polcik, M. A1 - Schmeißer, Dieter T1 - High Resolution Photoelectron Spectroscopy on SiC Surfaces Y1 - 2002 ER - TY - JOUR A1 - Pop, D. A1 - Winter, B. A1 - Batchelor, David R. A1 - Freyer, W. A1 - Weber, R. A1 - Bröcker, D. A1 - Hertel, I. V. A1 - Schmeißer, Dieter A1 - Widdra, Wolf T1 - Copper Satellite Structure in Porphyrazine Compounds Y1 - 2002 ER - TY - JOUR A1 - Gracia, F. A1 - Martin-Concepcion, A. I. A1 - Barranco, A. A1 - Holgado, J. P. A1 - Espinos, J. P. A1 - Yubero, F. A1 - Batchelor, David R. A1 - Schmeißer, Dieter A1 - Gonzalez-Elipe, A. R. T1 - XAS investigation of texture in TiO2 thin films prepared by IBICVD Y1 - 2002 ER - TY - GEN A1 - Beerbom, Martin A1 - Mayer, Thomas A1 - Jaegermann, Wolfram A1 - Batchelor, David R. A1 - Schmeißer, Dieter T1 - Synchrotron-induced photoemission of GaAs electrodes after electrochemical treatment in aqueous electrolytes N2 - Electrochemically-induced oxidation and reduction reactions of UHV-cleaved GaAs(110) surfaces have been studied after emersion under potential control using highresolution synchrotron-induced photoelectron spectroscopy. High quality spectra of the As and Ga core 3d lines and the valence band region have been obtained. Thespectra of the anodic oxide show strong emission of bulk-like Ga2O3 and some As2O3 with the admixture of suboxides and hydroxides. Ga2O3 and As2O3 arecathodically reduced leaving the GaAs surface covered mostly with elemental As, some As-H and remnants of Ga-suboxides and -hydroxides. KW - GAAS(110) KW - GaAs KW - Electrochemistry KW - Aqueous electrolytes KW - Surface engineering Y1 - 2002 ER - TY - JOUR A1 - Sieber, N. A1 - Seyller, Th. A1 - Graupner, R. A1 - Ley, L. A1 - Mikalo, Ricardo Pablo A1 - Hoffmann, Patrick A1 - Batchelor, David R. A1 - Schmeißer, Dieter T1 - Wet-chemical preparation of silicate adlayer reconstructed SiC(0001) surfaces as studied by PIES and LEED N2 - We have studied the surface chemistry of 6H-SiC(0001) and 6H-SiC (000 (1) over bar) after wet-chemical treatment using photoelectron spectroscopy (PES) andlow-energy electron diffraction (LEED). The origin of chemically shifted components in the Si2p and C1s spectra is discussed in the light of previous studies onwet-chemically prepared surfaces and on silicate adlayer reconstructed surfaces. On 6H-SiC(0001) an ordered silicate adlayer was prepared by etching the surface withsulfuric acid based agents. KW - Core level KW - Photoelectron spectroscopy KW - Synchrotron radiation KW - Wet-chemical preparation OXIDE Y1 - 2002 ER - TY - GEN A1 - Lewerenz, Hans-Joachim A1 - Aggour, Mohammed A1 - Murrell, Chris A1 - Kanis, M. A1 - Hoffmann, Patrick A1 - Jungblut, H. A1 - Schmeißer, Dieter T1 - Interface engineering of photoelectrochemically prepared Si surfaces N2 - The oxide of Si(111) formed by electropolishing in dilute ammonium fluoride solution is analysed by photoelectron spectroscopy using synchrotron radiation. The oxidiclayer is about 3.1 nm thick and contains Si-F-x species as well as oxyfluorides. The oxyfluorides are found preferentially at the electropolishing layer surface. SiOHspecies are concentrated at the oxidic film/substrate interface. The full width half maximum of the Si 2p line indicates that the Si/electropolishing oxide interface issmoother than the Si/natural oxide interface. KW - Mean Free Paths KW - Silicon KW - Range Y1 - 2002 ER - TY - JOUR A1 - Batchelor, David R. A1 - Follath, Rolf A1 - Schmeißer, Dieter T1 - Commissioning Results of the BTUC-PGM beamline Y1 - 2001 ER - TY - GEN A1 - Böhme, O. A1 - Lloyd Spetz, Anita A1 - Lundström, Ingemar A1 - Schmeißer, Dieter T1 - Nanoparticles as the Active Element of High-Temperature Metal-Insulator-Silicon Carbide Gas Sensors T2 - Advanced Materials Y1 - 2001 SN - 1521-4095 SN - 0935-9648 VL - 13 IS - 8 SP - 597 EP - 601 ER - TY - GEN A1 - Gürek, A. G. A1 - Appel, Günter A1 - Mikalo, Ricardo Pablo A1 - Schmeißer, Dieter T1 - Synthesis of dihydroxy silicon phthalocyanine tetrasulfonic acid and poly-µ-oxo silicon phthalocyanine tetrasulfonic acid T2 - Journal of Porphyrins and Phthalocyanines Y1 - 2001 SN - 1099-1409 SN - 1088-4246 VL - 5 IS - 10 SP - 751 EP - 757 ER - TY - GEN A1 - Henkel, Karsten A1 - Oprea, A. A1 - Paloumpa, Ioanna A1 - Appel, Günter A1 - Schmeißer, Dieter A1 - Kamieth, P. T1 - Selective polypyrrole electrodes for quartz microbalances : NO2 and gas flux sensitivities T2 - Sensors and Actuators : B, Chemical 76(2001)1-3 Y1 - 2001 SN - 0925-4005 VL - 76 IS - 1-3 SP - 124 EP - 129 ER - TY - GEN A1 - Hoffmann, Patrick A1 - Mikalo, Ricardo Pablo A1 - Yfantis, Alexandros D. A1 - Batchelor, David R. A1 - Appel, Günter A1 - Schmeißer, Dieter T1 - A Spectro-Microscopic Approach for Thin Film Analysis Grain Boundaries in mc-Si and Sn/SnO2 Nano Particles T2 - Microchimica Acta Y1 - 2001 SN - 1436-5073 SN - 0026-3672 VL - 136 IS - 3-4 SP - 109 EP - 113 ER - TY - JOUR A1 - Mikalo, Ricardo Pablo A1 - Appel, Günter A1 - Hoffmann, Patrick A1 - Schmeißer, Dieter T1 - Band Bending in Doped Conducting Polypyrrole Interaction with Silver Y1 - 2001 ER - TY - JOUR A1 - Mikalo, Ricardo Pablo A1 - Appel, Günter A1 - Schmeißer, Dieter T1 - Conductivity of Silver exposed Polypyrrole Films Y1 - 2001 ER - TY - JOUR A1 - Mikalo, Ricardo Pablo A1 - Hoffmann, Patrick A1 - Batchelor, David R. A1 - Schmeißer, Dieter A1 - Lloyd Spetz, Anita A1 - Lundström, Ingemar T1 - Comparison of HF and ozone treated SiC surfaces Y1 - 2001 ER - TY - JOUR A1 - Schmeißer, Dieter A1 - Mikalo, Ricardo Pablo A1 - Hoffmann, Patrick A1 - Seyller, Th. A1 - Ley, L. A1 - Lloyd Spetz, Anita T1 - Oxide growth on SiC (0001) surfaces Y1 - 2001 ER -