TY - GEN A1 - Aggour, Mohammed A1 - Stoerkel, Ulrich A1 - Murrell, Chris A1 - Campbell, S. A. A1 - Jungblut, H. A1 - Hoffmann, Patrick A1 - Mikalo, Ricardo Pablo A1 - Schmeißer, Dieter A1 - Lewerenz, Hans-Joachim T1 - Electrochemical interface modification of CuInS2 thin films N2 - We studied two novel electrochemical treatments of CuInS2 solar-cell absorber films, introduced to remove the deleterious segregated CuS phase. Their influence onsurface topography, chemistry and electronic properties was investigated using in situ atomic force microscopy (AFM) and photoclectron spectroscopy, performed inpart at the U49/2 undulator beam line at BESSY II. The results are examined in order to develop an improved understanding of the chemical-electrochemical surfacetransformation processes. KW - thin-film solar cells KW - copper indium disulfide KW - atomic force microscopy (AFM) KW - photoelectron spectroscopy KW - synchrotron radiation KW - Solar-Cell Y1 - 2002 ER - TY - GEN A1 - Müller, Klaus A1 - Henkel, Karsten A1 - Mikalo, Ricardo Pablo A1 - Paloumpa, Ioanna A1 - Schmeißer, Dieter T1 - Elektronik mit organischen Materialien N2 - Plastikelektronik, flexible Solarzellen, intelligente Kleidung, neuartige und maßgeschneiderte Transducer für die Gas-, Flüssigkeits- und Biosensorik, all dies sind Anwendungen, die ohne halbleitende Polymere nicht denkbar wären und die Bereiche erschließen, in denen zur Zeit eine regelrechte Goldgräberstimmung herrscht. Mit wichtigen Beiträgen im Grundlagen- und Anwendungsbereich nimmt die BTU Cottbus an dieser Entwicklung teil, u. a. auch durch eine Kooperation mit dem Institut für Mikrobiologie des Carl-Thiem-Klinikums Cottbus.In diesem Artikel werden die Voraussetzungen für die Konstruktion organischer Feldeffekt-Transistoren mit gassensitiver Gate-Elektrode vorgestellt. Untersuchungen zur elektronischen Struktur des organischen Halbleiters Poly(3-Hexylthiophen), die Anwendung dieses Materials als aktive Schicht in organischen Feldeffekt-Transitoren, die Gassensitivität von Polypyrrolelektroden auf Quarz-Mikrowaagen und die Mikrorstukturierung organischer Elektroden werden beschrieben. Y1 - 2002 PB - BTU Cottbus, Eigenverlag ER - TY - GEN A1 - Beerbom, Martin A1 - Mayer, Thomas A1 - Jaegermann, Wolfram A1 - Batchelor, David R. A1 - Schmeißer, Dieter T1 - Synchrotron-induced photoemission of GaAs electrodes after electrochemical treatment in aqueous electrolytes N2 - Electrochemically-induced oxidation and reduction reactions of UHV-cleaved GaAs(110) surfaces have been studied after emersion under potential control using highresolution synchrotron-induced photoelectron spectroscopy. High quality spectra of the As and Ga core 3d lines and the valence band region have been obtained. Thespectra of the anodic oxide show strong emission of bulk-like Ga2O3 and some As2O3 with the admixture of suboxides and hydroxides. Ga2O3 and As2O3 arecathodically reduced leaving the GaAs surface covered mostly with elemental As, some As-H and remnants of Ga-suboxides and -hydroxides. KW - GAAS(110) KW - GaAs KW - Electrochemistry KW - Aqueous electrolytes KW - Surface engineering Y1 - 2002 ER - TY - GEN A1 - Lewerenz, Hans-Joachim A1 - Aggour, Mohammed A1 - Murrell, Chris A1 - Kanis, M. A1 - Hoffmann, Patrick A1 - Jungblut, H. A1 - Schmeißer, Dieter T1 - Interface engineering of photoelectrochemically prepared Si surfaces N2 - The oxide of Si(111) formed by electropolishing in dilute ammonium fluoride solution is analysed by photoelectron spectroscopy using synchrotron radiation. The oxidiclayer is about 3.1 nm thick and contains Si-F-x species as well as oxyfluorides. The oxyfluorides are found preferentially at the electropolishing layer surface. SiOHspecies are concentrated at the oxidic film/substrate interface. The full width half maximum of the Si 2p line indicates that the Si/electropolishing oxide interface issmoother than the Si/natural oxide interface. KW - Mean Free Paths KW - Silicon KW - Range Y1 - 2002 ER - TY - GEN A1 - Lupina, Grzegorz A1 - Dabrowski, Jarek Marek A1 - Formanek, Peter A1 - Schmeißer, Dieter A1 - Sorge, Roland A1 - Wenger, Christian A1 - Zaumseil, Peter A1 - Müssig, Hans-Joachim T1 - Solid-state reaction between Pr and SiO2 studied by photoelectron spectroscopy and ab initio calculations T2 - Materials Science in Semiconductor Processing N2 - We report on the structural and electrical properties of Pr-based high-k dielectric films fabricated by solid-state reaction between metallic Pr and SiO2 underlayers. A non-destructive depth profiling using synchrotron radiation excited photoelectron spectroscopy (SR-PES), X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM) were employed to examine the chemical composition and microstructure. Ab initio calculations were done to gain insight into the physical processes involved. SR-PES results indicate that Pr deposition at room temperature (RT) leads to the formation of a Pr silicide and a Pr oxide, what is in good agreement with the scenario expected from ab initio calculations. As revealed by TEM and electrical measurements, oxidation of the reacted structures, followed by annealing, results in a stacked dielectric composed of a SiO2-based buffer with an enhanced permittivity and a Pr silicate film with a high dielectric constant. The leakage current density of 10-4 A/cm2 was measured for stacks with capacitance equivalent thickness (CET) of 1.5 nm prepared by evaporation of the Pr layer on a 1.8 nm SiO2 film, followed by oxidation in air ambient and annealing in N2 atmosphere. The capacitance-voltage (C-V) curves exhibit a large flatband voltage (VFB) shift indicating the presence of a positive charge in the stack. Switching away from the Al contacts to Au gate electrodes introduces a significant reduction of the VFB by 1.3 eV, what is much more than the change expected from the work function difference between Al and Au (not, vert, similar0.9 eV). This in turn implies that VFB is strongly affected by the gate interface electrode. KW - High-k dielectrics KW - Photoelectron spectroscopy KW - Interface reaction Y1 - 2004 SN - 1369-8001 VL - 7 IS - 4-6 SP - 215 EP - 220 ER - TY - GEN A1 - Yfantis, Alexandros D. A1 - Tzalas, B. A1 - Lambrakopoulos, S. A1 - Anagnostaki, E. A1 - Schmeißer, Dieter T1 - New chrome free, environmentally friendly methods in chemical processes N2 - It gives an overview of the research work to develop chrom-free methods in different chemical processes. A new class of materials, the conductive polymers, have been studied extensively for their anticorrosion properties. KW - Alloys KW - Polypyrrole KW - Polymers Y1 - 2002 ER - TY - GEN A1 - Yfantis, Alexandros D. A1 - Paloumpa, Ioanna A1 - Schmeißer, Dieter ED - Kainer, Karl Ulrich T1 - Corrosion Protection by Conductive Polymers for Magnesium Alloys T2 - Magnesium, proceedings of the 6th International Conference on Magnesium Alloys and their Applications, November 2003 in Wolfsburg N2 - In this work, we present the experimental data related to the effect of the polypyrrole concentration and the film thickness on the corrosion inhibition properties of these novel polymer coatings. The relative corrosion resistance properties of the films formed from the matrix solutions, where polypyrrole was in situ polymerized and in cases where polypyrrole is dispersed in a form of powder (pigment) in the polyaclylic polymer, are further examined. The evaluation of the experimental data provides significant evidence regarding the mechanism of corrosion inhibition, as well as the optimization of the synthesis and application conditions. KW - corrosion protection KW - conductive polymers for magnesium alloys KW - polypyrrole Y1 - 2004 SN - 3-527-30975-6 SP - 605 EP - 610 PB - Wiley-VCH CY - Weinheim ER - TY - GEN A1 - Lamprakopoulos, Stelios A1 - Schmeißer, Dieter A1 - Anastassopoulou, Jane A1 - Theophanides, Theophile A1 - Yfantis, Alexandros D. T1 - An FTIR study of the role of H2O and D2O in the aging mechanism of conductive polypyrroles T2 - Synthetic Metals N2 - In the present work the role of H2O was studied by conductivity measurements and FTIR spectroscopy using the isotopic effect of deuterium in order to elucidate the aging mechanism of conductivity of polypyrroles. Polypyrrole was prepared with PTS as a dopant, by using deuterated water. Conductivity measurements showed changes due to structural water and atmospheric humidity. The FTIR absorption spectra indicated that the most probable structure of polypyrrole is the two-dimensional one. This finding could be attributed to the inhibition of polypyrrole's IR modes. The infrared spectrum analysis show that the gamma -NH bending mode of pyrrole has significantly changed after polymerization of pyrrole and this result is in accordance with XPS measurements. KW - Polypyrrole KW - Conductivity KW - FTIR KW - Isotopic effect Y1 - 2004 U6 - https://doi.org/10.1016/j.synthmet.2004.03.006 SN - 0379-6779 VL - 144 IS - 3 SP - 229 EP - 234 ER - TY - GEN A1 - Sidorenko, Alexander A1 - Tokarev, Igor A1 - Krenek, Radim A1 - Burkov, Yevgen A1 - Schmeißer, Dieter A1 - Stamm, Manfred T1 - XPEEM investigations of 2D hierachical array of Ni nanorods using block copolymer templates Y1 - 2004 ER - TY - GEN A1 - Henkel, Karsten A1 - Sohal, Rakesh A1 - Torche, Mohamed A1 - Paloumpa, Ioanna A1 - Müller, Klaus A1 - Hoffmann, Patrick A1 - Schmeißer, Dieter T1 - Grenzflächenoptimierung für funktionale Dünnschichtsysteme: Oxide und Polymere T2 - Forum der Forschung Y1 - 2005 SN - 0947-6989 VL - 9 IS - 18 SP - 49 EP - 56 ER - TY - GEN A1 - Seifarth, Olaf A1 - Burkov, Yevgen A1 - Schmeißer, Dieter A1 - Stamm, Manfred T1 - Metallic nickel nanorod arrays embedded into ordered block copolymer templates T2 - Thin Solid Films Y1 - 2007 SN - 0040-6090 VL - 515 IS - 16 SP - 6552 EP - 6556 ER - TY - GEN A1 - Schroeder, Thomas A1 - Lupina, Grzegorz A1 - Seifarth, Olaf A1 - Tallarida, Massimo A1 - Schmeißer, Dieter T1 - Synchrotron radiation x-ray photoelectron spectroscopy study on the interface chemistry of high-k PrxAl2-xO3 (x=0-2) dielectrics on TiN for dynamic random access memory applications T2 - Journal of Applied Physics Y1 - 2007 SN - 0021-8979 VL - 102 IS - 1 SP - 014103 ER - TY - GEN A1 - Zagorodniy, Kostyantyn A1 - Chumakov, Dmytro A1 - Täschner, Christine A1 - Lukowiak, Anna A1 - Stegmann, Heiko A1 - Schmeißer, Dieter A1 - Geisler, Holm A1 - Engelmann, Hans-Jürgen A1 - Hermann, Helmut A1 - Zschech, Ehrenfried T1 - Novel Carbon-cage based ultralow-k materials: Modelling and first experiments KW - carbon-cage KW - ultralow-k Y1 - 2008 U6 - https://doi.org/10.1109/TSM.2008.2005396 ER - TY - GEN A1 - Beerbom, Martin A1 - Mayer, Thomas A1 - Jaegermann, Wolfram A1 - Batchelor, David R. A1 - Schmeißer, Dieter T1 - Electrochemically Induced Redox-Reactions on GaAs-Surfaces: High Resolution Photoemission Spectra Taken at the U49/2 Beamline Y1 - 2001 ER - TY - GEN A1 - Batchelor, David R. A1 - Schmeißer, Dieter A1 - Follath, Rolf T1 - The BTU Cottbus Beamline at BESSY II Y1 - 1999 ER - TY - GEN A1 - Sowinska, Małgorzata A1 - Das, Chittaranjan A1 - Wojciechowski, Konrad A1 - Rouissi, Zied A1 - Snaith, Henry J. A1 - Schmeißer, Dieter T1 - Atomic layer deposition of Al2O3 on CH3NH3PbI3 for enhancement of perovskite solar cells stability T2 - Synchrotron Radiation in Natural Science : Bulletin of the Polish Synchrotron Radiation Society KW - atomic layer deposition KW - perovskite soloar cells KW - X-ray photoelectron spectroscopy (XPS) KW - Atomic foce microscopy (AFM) Y1 - 2016 SN - 1644-7190 VL - 15 IS - 1-2 SP - S. 33 ER - TY - GEN A1 - Schmeißer, Dieter A1 - Janowitz, Christoph T1 - The Cu2p-edge of superconducting BiSrCu-Oxides studed by resonant Photoelectron Spectroscopy T2 - Synchrotron Radiation in Natural Science : Bulletin of the Polish Synchrotron Radiation Society KW - synchrotron raidation KW - superconductor Y1 - 2016 SN - 1644-7190 VL - 15 IS - 1-2 SP - S. 35 ER -