TY - CHAP A1 - Rudolph, Matthias A1 - Flucke, Jens A1 - Schnieder, Frank A1 - Schmückle, Franz-Josef A1 - Heinrich, Wolfgang T1 - On the magnetic coupling between bondwires in power-transistor packages Y1 - 2010 ER - TY - GEN A1 - Rudolph, Matthias A1 - Kraemer, Tomas A1 - Schmückle, Franz-Josef A1 - Würfl, Joachim A1 - Tränkle, Günther T1 - InP DHBT Process in Transferred Substrate Technology with ft and fmax over 400 GHz Y1 - 2009 ER - TY - CHAP A1 - Rudolph, Matthias A1 - Engelmann, Jens A1 - Schmückle, Franz-Josef ED - Rudolph, Matthias ED - Root, David E. ED - Fager, Christian T1 - Large and packaged Transistors T2 - Nonlinear Transistor Model Parameter Extraction Techniques Y1 - 2011 SN - 978-0-521-76210-6 SP - 171 EP - 205 PB - Cambridge University Press CY - Cambridge ER - TY - CHAP A1 - Rudolph, Matthias A1 - Schnieder, Frank A1 - Schmückle, Franz-Josef A1 - Heinrich, Wolfgang T1 - An Analysis of Source Connections in GaN Power Transistor Packages T2 - Proceedings, Microwave Conference (GeMiC), 2012 The 7th in Ilmenau, Germany Y1 - 2012 SN - 978-3-9812668-4-9 CY - Ilmenau ER - TY - GEN A1 - Schnieder, Frank A1 - Bengtsson, Olof A1 - Schmückle, Franz-Josef A1 - Rudolph, Matthias A1 - Heinrich, Wolfgang T1 - Simulation of RF Power Distribution in a Packaged GaN Power Transistor Using an Electro-Thermal Large-Signal Description T2 - IEEE transactions on microwave theory and techniques Y1 - 2013 U6 - https://doi.org/10.1109/TMTT.2013.2261089 SN - 0018-9480 VL - 61 IS - 7 SP - 2603 EP - 2609 ER - TY - GEN A1 - Nosaeva, Ksenia A1 - Al-Sawaf, Thualfiqa A1 - John, Wilfred A1 - Stoppel, Dimitri A1 - Rudolph, Matthias A1 - Schmückle, Franz-Josef A1 - Janke, Bernd A1 - Krüger, Olaf A1 - Krozer, Viktor A1 - Heinrich, Wolfgang A1 - Weimann, Nils T1 - Multifinger Indium Phosphide Double-Heterostructure Transistor Circuit Technology With Integrated Diamond Heat Sink Layer T2 - IEEE Transactions on Electron Devices Y1 - 2016 U6 - https://doi.org/10.1109/TED.2016.2533669 SN - 0018-9383 SN - 1557-9646 VL - 63 IS - 5 SP - 1846 EP - 1852 ER - TY - CHAP A1 - Schmückle, Franz-Josef A1 - Lenk, Friedrich A1 - Hutter, M. A1 - Klein, M. A1 - Oppermann, H. A1 - Engelmann, G. A1 - Topper, M. A1 - Riepe, K. A1 - Heinrich, Wolfgang T1 - W-band flip-chip VCO in thin-film environment T2 - 2005 IEEE MTT-S International Microwave Symposium, June 12 - 17, 2005, Long Beach, CA N2 - A flip-chip packaging approach for W-band GaAs chips is presented using thin-film structures on silicon as carrier substrate. Reliability investigations indicate that, depending on bump size, the CTE mismatch is not critical and an underfiller does not provide distinctive benefits. A 77 GHz VCO GaAs-HBT MMIC is flip-chip-mounted to demonstrate validity of the packaging scheme. Y1 - 2005 SN - 0-7803-8845-3 U6 - https://doi.org/10.1109/MWSYM.2005.1516837 PB - IEEE Operations Center CY - Piscataway, NJ ER -