TY - GEN A1 - Kozłowski, Grzegorz A1 - Zaumseil, Peter A1 - Schubert, Markus Andreas A1 - Yamamoto, Yuji A1 - Schülli, Tobias U. A1 - Tillack, Bernd A1 - Schroeder, Thomas T1 - Growth and relaxation processes in Ge nanocrystals on free-standing Si(001) nanopillars T2 - Nanotechnology Y1 - 2012 U6 - https://doi.org/10.1088/0957-4484/23/11/115704 SN - 0957-4484 VL - 23 IS - 11 SP - 115704 EP - 115711 ER - TY - GEN A1 - Zaumseil, Peter A1 - Kozłowski, Grzegorz A1 - Yamamoto, Yuji A1 - Bauer, J. A1 - Schubert, Markus Andreas A1 - Schülli, Tobias U. A1 - Tillack, Bernd A1 - Schroeder, Thomas T1 - Compliant Si nanostructures on SOI for Ge nanoheteroepitaxy – a case study for lattice mismatched semiconductor integration on Si(001) T2 - Journal of Applied Physics Y1 - 2012 SN - 0021-8979 VL - 112 IS - 4 SP - 043506 EP - 043511 ER - TY - GEN A1 - Zaumseil, Peter A1 - Kozłowski, Grzegorz A1 - Schubert, Markus Andreas A1 - Yamamoto, Yuji A1 - Bauer, J. A1 - Schülli, Tobias U. A1 - Tillack, Bernd A1 - Schroeder, Thomas T1 - The role of SiGe buffer in growth and relaxation of Ge on free-standing Si(001) nanopillars T2 - Nanotechnology Y1 - 2012 SN - 1361-6528 VL - 23 IS - 35 SP - 355706 ER - TY - GEN A1 - Chahine, Gilbert A. A1 - Zöllner, Marvin Hartwig A1 - Richard, Marie-Ingrid A1 - Subhajit, G. A1 - Zaumseil, Peter A1 - Capellini, Giovanni A1 - Schroeder, Thomas A1 - Schülli, Tobias U. T1 - Strain and Lattice Orientation Distribution in SiN/Ge CMOS Compatible Light Emitters Microstructures by Quick X-ray Nano-diffraction Microscopy T2 - Applied Physics Letters Y1 - 2015 U6 - https://doi.org/10.1063/1.4909529 SN - 1077-3118 VL - 106 SP - 071902-1 EP - 071902-4 ER - TY - GEN A1 - Zöllner, Marvin Hartwig A1 - Richard, Marie-Ingrid A1 - Chahine, Gilbert A. A1 - Zaumseil, Peter A1 - Reich, Christian A1 - Capellini, Giovanni A1 - Montalenti, Francesco A1 - Marzegalli, Anna A1 - Xie, Ya-Hong A1 - Schülli, Tobias U. A1 - Häberlen, Maik A1 - Storck, Peter A1 - Schroeder, Thomas T1 - Imaging structure and composition homogeneity of 300 mm SiGe virtual substrates for advanced CMOS applications by scanning X-ray diffraction microscopy T2 - ACS Applied Materials and Interfaces Y1 - 2015 U6 - https://doi.org/10.1021/am508968b SN - 1944-8252 VL - 7 IS - 17 SP - 9031 EP - 9037 ER - TY - GEN A1 - Richard, Marie-Ingrid A1 - Zöllner, Marvin Hartwig A1 - Chahine, Gilbert A. A1 - Zaumseil, Peter A1 - Capellini, Giovanni A1 - Häberlen, Maik A1 - Storck, Peter A1 - Schülli, Tobias U. A1 - Schröder, Thomas T1 - Structural Mapping of Functional Ge Layers Grown on Graded SiGe Buffers for sub-10 nm CMOS Applications Using Advanced X-ray Nano-Diffraction T2 - ACS Applied Materials and Interfaces Y1 - 2015 U6 - https://doi.org/10.1021/acsami.5b08645 SN - 1944-8244 SN - 1944-8252 VL - 7 IS - 48 SP - 26696 EP - 26700 ER -