TY - GEN A1 - Nosaeva, Ksenia A1 - Weimann, Nils A1 - Rudolph, Matthias A1 - John, Wilfred A1 - Krüger, Olaf A1 - Heinrich, Wolfgang T1 - Thin ice: Diamond films could more than double the power output achievable with transistors in the ‘Terahertz gap’ by improving thermal management T2 - Electronics Letters Y1 - 2015 U6 - https://doi.org/10.1049/el.2015.1943 SN - 1350-911X VL - 51 IS - 13 SP - S. 959 ER - TY - CHAP A1 - Andrei, Cristina A1 - Bengtsson, Olof A1 - Dörner, Ralf A1 - Chevtchenko, Serguei A. A1 - Rudolph, Matthias T1 - Robust Stacked GaN-Based Low-Noise Amplifier MMIC for Receiver Applications T2 - IEEE MTT-S International Microwave Symposium (IMS), 17-22 May 2015 Y1 - 2015 U6 - https://doi.org/10.1109/MWSYM.2015.7166766 PB - IEEE ER - TY - CHAP A1 - Luo, Peng A1 - Bengtsson, Olof A1 - Rudolph, Matthias T1 - Reliable GaN HEMT Modeling Based on Chalmers Model and Pulsed S-Parameter Measurements T2 - 2016 German Microwave Conference, March 14-16, 2016 Bochum, Germany Y1 - 2016 SN - 978-3-9812668-7-0 U6 - https://doi.org/10.1109/GEMIC.2016.7461650 SP - 441 EP - 444 PB - IEEE CY - Piscataway, NJ ER - TY - GEN A1 - Nosaeva, Ksenia A1 - Al-Sawaf, Thualfiqa A1 - John, Wilfred A1 - Stoppel, Dimitri A1 - Rudolph, Matthias A1 - Schmückle, Franz-Josef A1 - Janke, Bernd A1 - Krüger, Olaf A1 - Krozer, Viktor A1 - Heinrich, Wolfgang A1 - Weimann, Nils T1 - Multifinger Indium Phosphide Double-Heterostructure Transistor Circuit Technology With Integrated Diamond Heat Sink Layer T2 - IEEE Transactions on Electron Devices Y1 - 2016 U6 - https://doi.org/10.1109/TED.2016.2533669 SN - 0018-9383 SN - 1557-9646 VL - 63 IS - 5 SP - 1846 EP - 1852 ER - TY - CHAP A1 - Luo, Peng A1 - Bengtsson, Olof A1 - Rudolph, Matthias T1 - Novel Approach to Trapping Effect Modeling based on Chalmers Model and Pulsed S-Parameter Measurements T2 - 2016 11th European Microwave Integrated Circuits Conference : 3-4 October 2016, London, UK Y1 - 2016 SN - 978-2-87487-044-6 SN - 978-1-4673-9009-5 U6 - https://doi.org/10.1109/EuMIC.2016.7777514 SP - 157 EP - 160 PB - IEEE CY - Piscataway, NJ ER - TY - CHAP A1 - Rudolph, Matthias T1 - GaN HEMTs for low-noise amplification — status and challenges T2 - Integrated Nonlinear Microwave and Millimetre-wave Circuits Workshop (INMMiC), 20-21 April 2017, Graz, Austria Y1 - 2017 SN - 978-1-5090-5862-4 U6 - https://doi.org/10.1109/INMMIC.2017.7927327 PB - IEEE CY - Piscataway, NJ ER - TY - GEN A1 - Apte, Anisha M. A1 - Rohde, Ulrich L. A1 - Poddar, Ajay K. A1 - Rudolph, Matthias T1 - Optimizing Phase-Noise Performance: Theory and Design Techniques for a Crystal Oscillator T2 - IEEE Microwave Magazine Y1 - 2017 U6 - https://doi.org/10.1109/MMM.2017.2679998 SN - 1527-3342 VL - 18 IS - 4 SP - 108 EP - 123 ER - TY - CHAP A1 - Rudolph, Matthias A1 - Andrei, Cristina A1 - Dörner, Ralf A1 - Chevtchenko, Serguei A. A1 - Heinrich, Wolfgang T1 - Noise in GaN HEMTs and Circuits T2 - 24th International Conference on Noise and Fluctuations (ICNF), Vilnius, Lithuania, June 20-23, 2017 Y1 - 2017 SN - 978-1-5090-2760-6 U6 - https://doi.org/10.1109/ICNF.2017.7985978 SP - 1 EP - 4 PB - IEEE CY - Piscataway, NJ ER - TY - CHAP A1 - Bonani, Fabrizio A1 - Rudolph, Matthias T1 - Simulating Noise in Nonlinear Circuits T2 - IEEE MTT-S International Microwave Symposium (IMS), 4-9 June 2017, Honololu, HI, USA, Workshop WSP: Recent Advances in Microwave Noise: from Device Modeling to Network Design and Characterization Y1 - 2017 UR - https://ims2017.org/technical-programs/filter/search/rudolph ER - TY - CHAP A1 - Luo, Peng A1 - Bengtsson, Olof A1 - Rudolph, Matthias T1 - A Drain Lag Model for GaN HEMT based on Chalmers Model and Pulsed S-Parameter Measurements T2 - IEEE MTT-S International Microwave Symposium (IMS), 4-9 June 2017, Honololu, HI, USA Y1 - 2017 SN - 978-1-5090-6360-4 U6 - https://doi.org/10.1109/MWSYM.2017.8059085 SP - 240 EP - 243 PB - IEEE CY - Piscataway, NJ ER - TY - CHAP A1 - Andrei, Cristina A1 - Dörner, Ralf A1 - Chevtchenko, Serguei A. A1 - Heinrich, Wolfgang A1 - Rudolph, Matthias T1 - On the Optimization of GaN HEMT Layout for Highly Rugged Low-Noise Amplifier Design T2 - 12th European Microwave Integrated Circuits Conference (EuMIC), 8-10 Oct. 2017, Nuremberg, Germany Y1 - 2017 SN - 978-2-87487-048-4 U6 - https://doi.org/10.23919/EuMIC.2017.8230705 SP - 244 EP - 247 PB - IEEE CY - Piscataway, NJ ER - TY - CHAP A1 - Kaule, Evelyne A1 - Dörner, Ralf A1 - Weimann, Nils A1 - Rudolph, Matthias T1 - Noise modeling of transferred-substrate InP-DHBTs T2 - IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems (COMCAS), 13-15 Nov. 2017, Tel-Aviv, Israel 2017 Y1 - 2017 SN - 978-1-5386-3169-0 U6 - https://doi.org/10.1109/COMCAS.2017.8244768 SP - 1 EP - 4 PB - IEEE CY - Piscataway, NJ ER - TY - CHAP A1 - Nasser, Caram A1 - Ritter, Dan A1 - Rudolph, Matthias T1 - Bias dependence of the access resistance in GaN HEMTs T2 - 2018 22nd International Microwave and Radar Conference (MIKON), Poznán, May 14-17, 2018, Poland Y1 - 2018 UR - https://ieeexplore.ieee.org/document/8405197 SN - 978-83-949421-1-3 U6 - https://doi.org/10.23919/MIKON.2018.8405197 SP - 271 EP - 273 PB - IEEE CY - Piscataway, NJ ER - TY - CHAP A1 - Luo, Peng A1 - Schnieder, Frank A1 - Rudolph, Matthias T1 - Chalmers GaN HEMT charge model revisited T2 - German Microwave Conference (GeMiC), 12-14 March 2018, Freiburg, Germany Y1 - 2018 SN - 978-3-9812668-8-7 U6 - https://doi.org/10.23919/GEMIC.2018.8335055 SP - 164 EP - 167 PB - IEEE CY - Piscataway, NJ ER - TY - CHAP A1 - Luo, Peng A1 - Schnieder, Frank A1 - Bengtsson, Olof A1 - Heinrich, Wolfgang A1 - Rudolph, Matthias T1 - Modeling the Virtual Gate Voltage in Dispersive GaN HEMTs T2 - IEEE/MTT-S International Microwave Symposium, 10-15 June 2018, Philadelphia, PA, USA Y1 - 2018 SN - 978-1-5386-5067-7 U6 - https://doi.org/10.1109/MWSYM.2018.8439389 SP - 728 EP - 731 PB - IEEE CY - Piscataway, NJ ER - TY - GEN A1 - Kaule, Evelyne A1 - Andrei, Cristina A1 - Gerlich, Stefan A1 - Dörner, Ralf A1 - Rudolph, Matthias T1 - Limiting the Output Power of Rugged GaN LNAs T2 - 14th European Microwave Integrated Circuits Conference (EuMIC) N2 - Rugged GaN HEMT low-noise amplifiers are well established, but the common concept of achieving ruggedness by applying the gate supply voltage through a high ohmic resistance might not be sufficient in addition to control the maximum output power. This paper shifts the focus to the protection of subsequent stages and proposes a circuit concept based on an output attenuator and an adaptive drain supply. It is shown that the concept implementation provides an attenuation of up to 28dB under input overdrive condition while leaving small-signal noise Figure unaffected. KW - Power generation; Logic Gates; Gallium nitride; Attenuators; HEMTs; Printed circuits; Power measurement; Limit; GaN; HEMT; ruggedness; low noise amplifier (LNA); receiver Y1 - 2019 SN - 978-2-87487-056-9 SN - 978-1-7281-0768-4 U6 - https://doi.org/10.23919/EuMIC.2019.8909653 SP - 240 EP - 242 CY - Paris, France ER - TY - GEN A1 - Kaule, Evelyne A1 - Andrei, Cristina A1 - Gerlich, Stefan A1 - Dörner, Ralf A1 - Rudolph, Matthias T1 - Limiting the Output Power of Rugged GaN LNAs T2 - Proceedings of 49th European Microwave Conference (EuMC) N2 - Rugged GaN HEMT low-noise amplifiers are well established, but the common concept of achieving ruggedness by applying the gate supply voltage through a high ohmic resistance might not be sufficient in addition to control the maximum output power. This paper shifts the focus to the protection of subsequent stages and proposes a circuit concept based on an output attenuator and an adaptive drain supply. It is shown that the concept implementation provides an attenuation of up to 28 dB under input overdrive condition while leaving small-signal noise figure unaffected. KW - Power generation; Logic Gates; Gallium nitride; Attenuators; HEMTs; Printed circuits; Power measurement; Limit; GaN; HEMT; ruggedness; low noise amplifier (LNA); receiver Y1 - 2019 SN - 978-2-87487-055-2 SN - 978-1-7281-1798-0 U6 - https://doi.org/10.23919/EuMC.2019.8910675 SP - 794 EP - 796 CY - Paris, France ER - TY - GEN A1 - Nasser, Caram A1 - Luo, Peng A1 - Schnieder, Frank A1 - Rudolph, Matthias A1 - Ritter, Dan T1 - Simulation of the RF Power Performance of a GaN HFET and Comparison to Experiment T2 - IEEE Transactions on Electron Devices Y1 - 2019 U6 - https://doi.org/10.1109/TED.2019.2907484 SN - 0018-9383 SN - 1557-9646 VL - 66 IS - 5 SP - 2146 EP - 2150 ER - TY - GEN A1 - Griebel, Wolfgang A1 - Rudolph, Matthias A1 - Rohde, Ulrich L. T1 - Added Noise in Oscillators Caused by the Transistor Base Emitter Breakdown Phenomenon T2 - IETE Journal of Research Y1 - 2020 U6 - https://doi.org/10.1080/03772063.2020.1847702 SN - 0974-780X SP - 1 EP - 11 ER - TY - GEN A1 - Andrei, Cristina A1 - Rudolph, Matthias T1 - Properties of GaN LNAs for Front-End Applications T2 - WFC Towards A One-Chip Solution for GaN Front-Ends, Microwave Symposiums, Boston, 2019 Y1 - 2019 UR - https://www.b-tu.de/en/endowed-chair-rf-and-microwave-techniques/publications/publications#c208430 ER - TY - GEN A1 - Le, Quang Huy A1 - Huynh, Dang Khoa A1 - Wang, Defu A1 - Kämpfe, Thomas A1 - Rudolph, Matthias T1 - Small-Signal Modelling of mm-Wave MOSFET up to 110 GHz in 22nm FDSOI Technology T2 - Proceedings of the 2019 IEEE Asia-Pacific Microwave Conference (APMC) : 10-13 December 2019, Marina Bay Sands, Singapore Y1 - 2019 SN - 978-1-7281-3517-5 U6 - https://doi.org/10.1109/APMC46564.2019.9038620 SP - 222 EP - 224 PB - IEEE CY - Piscataway, NJ ER - TY - GEN A1 - Shivan, T. A1 - Kaule, Evelyne A1 - Hossain, M. A1 - Dörner, Ralf A1 - Johansen, Tom K. A1 - Stoppel, Dimitri A1 - Boppel, S. A1 - Heinrich, Wolfgang A1 - Krozer, Viktor A1 - Rudolph, Matthias T1 - Design and modeling of a ultra-wideband low-noise distributend amplifier in InP DHBT technology T2 - International Journal of Microwave and Wireless Technologies Y1 - 2019 U6 - https://doi.org/10.1017/S1759078719000515 SN - 1759-0795 N1 - MIKON 2018 / EuMW 2018 (Part II) VL - 11 IS - 7 SP - 635 EP - 644 ER - TY - GEN A1 - Luo, Peng A1 - Schnieder, Frank A1 - Bengtsson, Olof A1 - Vadalà, Valeria A1 - Raffo, Antonio A1 - Heinrich, Wolfgang A1 - Rudolph, Matthias T1 - A streamlined drain-lag model for GaN HEMTs based on pulsed S-parameter measurements T2 - International Journal of Microwave and Wireless Technologies Y1 - 2019 U6 - https://doi.org/10.1017/S1759078719000060 SN - 1759-0787 SN - 1759-0795 VL - 11 IS - 2 SP - 121 EP - 129 ER - TY - GEN A1 - Le, Quang Huy A1 - Huynh, Dang Khoa A1 - Wang, D. A1 - Zhao, Zhixing A1 - Lehmann, Steffen A1 - Kämpfe, Thomas A1 - Rudolph, Matthias T1 - W-Band Noise Characterization with Back-Gate Effects for Advanced 22nm FDSOI mm-Wave MOSFETs T2 - 2020 IEEE Radio Frequency Integrated Circuits Symposium (RFIC). 4-6 Aug. 2020, Los Angeles, CA, USA Y1 - 2020 SN - 978-1-7281-6809-8 SN - 978-1-7281-6810-4 U6 - https://doi.org/10.1109/RFIC49505.2020.9218369 SN - 2375-0995 SN - 1529-2517 SP - 131 EP - 134 ER - TY - GEN A1 - Kaule, Evelyne A1 - Dörner, Ralf A1 - Weimann, Nils A1 - Rudolph, Matthias T1 - Modeling the Noise of Transferred-Substrate InP DHBTs at Highest Frequencies T2 - 2020 German Microwave Conference (GeMiC), 09-11 March 2020 , Cottbus Y1 - 2020 UR - https://ieeexplore.ieee.org/document/9080188 SN - 978-3-9820-3971-8 SN - 978-1-7281-4206-7 SN - 2167-8022 SP - 52 EP - 55 ER - TY - GEN A1 - Huynh, Dang Khoa A1 - Le, Quang Huy A1 - Duhan, Pardeep A1 - Wang, Defu A1 - Kämpfe, Thomas A1 - Rudolph, Matthias T1 - Analysis of Hot-Carrier Degradation in 22nm FDSOI Transistors Using RF Small-Signal Characteristics T2 - 2020 German Microwave Conference (GeMiC), 09-11 March 2020, Cottbus, Germany Y1 - 2020 UR - https://ieeexplore.ieee.org/abstract/document/9080227 SN - 978-3-9820-3971-8 SN - 978-1-7281-4206-7 SN - 2167-8022 SP - 244 EP - 247 PB - IEEE CY - Piscataway ER -