TY - CHAP A1 - Kaule, Evelyne A1 - Dörner, Ralf A1 - Weimann, Nils A1 - Rudolph, Matthias T1 - Noise modeling of transferred-substrate InP-DHBTs T2 - IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems (COMCAS), 13-15 Nov. 2017, Tel-Aviv, Israel 2017 Y1 - 2017 SN - 978-1-5386-3169-0 U6 - https://doi.org/10.1109/COMCAS.2017.8244768 SP - 1 EP - 4 PB - IEEE CY - Piscataway, NJ ER - TY - GEN A1 - Kaule, Evelyne A1 - Andrei, Cristina A1 - Gerlich, Stefan A1 - Dörner, Ralf A1 - Rudolph, Matthias T1 - Limiting the Output Power of Rugged GaN LNAs T2 - 14th European Microwave Integrated Circuits Conference (EuMIC) N2 - Rugged GaN HEMT low-noise amplifiers are well established, but the common concept of achieving ruggedness by applying the gate supply voltage through a high ohmic resistance might not be sufficient in addition to control the maximum output power. This paper shifts the focus to the protection of subsequent stages and proposes a circuit concept based on an output attenuator and an adaptive drain supply. It is shown that the concept implementation provides an attenuation of up to 28dB under input overdrive condition while leaving small-signal noise Figure unaffected. KW - Power generation; Logic Gates; Gallium nitride; Attenuators; HEMTs; Printed circuits; Power measurement; Limit; GaN; HEMT; ruggedness; low noise amplifier (LNA); receiver Y1 - 2019 SN - 978-2-87487-056-9 SN - 978-1-7281-0768-4 U6 - https://doi.org/10.23919/EuMIC.2019.8909653 SP - 240 EP - 242 CY - Paris, France ER - TY - GEN A1 - Kaule, Evelyne A1 - Andrei, Cristina A1 - Gerlich, Stefan A1 - Dörner, Ralf A1 - Rudolph, Matthias T1 - Limiting the Output Power of Rugged GaN LNAs T2 - Proceedings of 49th European Microwave Conference (EuMC) N2 - Rugged GaN HEMT low-noise amplifiers are well established, but the common concept of achieving ruggedness by applying the gate supply voltage through a high ohmic resistance might not be sufficient in addition to control the maximum output power. This paper shifts the focus to the protection of subsequent stages and proposes a circuit concept based on an output attenuator and an adaptive drain supply. It is shown that the concept implementation provides an attenuation of up to 28 dB under input overdrive condition while leaving small-signal noise figure unaffected. KW - Power generation; Logic Gates; Gallium nitride; Attenuators; HEMTs; Printed circuits; Power measurement; Limit; GaN; HEMT; ruggedness; low noise amplifier (LNA); receiver Y1 - 2019 SN - 978-2-87487-055-2 SN - 978-1-7281-1798-0 U6 - https://doi.org/10.23919/EuMC.2019.8910675 SP - 794 EP - 796 CY - Paris, France ER - TY - GEN A1 - Shivan, T. A1 - Kaule, Evelyne A1 - Hossain, M. A1 - Dörner, Ralf A1 - Johansen, Tom K. A1 - Stoppel, Dimitri A1 - Boppel, S. A1 - Heinrich, Wolfgang A1 - Krozer, Viktor A1 - Rudolph, Matthias T1 - Design and modeling of a ultra-wideband low-noise distributend amplifier in InP DHBT technology T2 - International Journal of Microwave and Wireless Technologies Y1 - 2019 U6 - https://doi.org/10.1017/S1759078719000515 SN - 1759-0795 N1 - MIKON 2018 / EuMW 2018 (Part II) VL - 11 IS - 7 SP - 635 EP - 644 ER - TY - GEN A1 - Kaule, Evelyne A1 - Dörner, Ralf A1 - Weimann, Nils A1 - Rudolph, Matthias T1 - Modeling the Noise of Transferred-Substrate InP DHBTs at Highest Frequencies T2 - 2020 German Microwave Conference (GeMiC), 09-11 March 2020 , Cottbus Y1 - 2020 UR - https://ieeexplore.ieee.org/document/9080188 SN - 978-3-9820-3971-8 SN - 978-1-7281-4206-7 SN - 2167-8022 SP - 52 EP - 55 ER - TY - GEN A1 - Sriperumbuduri, Venkata Pawan A1 - Yacoub, Hady A1 - Johansen, Tom K. A1 - Wentzel, Andreas A1 - Dörner, Ralf A1 - Rudolph, Matthias T1 - Modeling Base-Collector Heterojunction Barrier Effect in InP DHBTs for Improved Large Singal Performance T2 - 2021 IEEE/MTT-S International Microwave Symposium : June 2021, Atlanta, Georgia, USA/20-25 June 2021, virtual event Y1 - 2021 SN - 978-1-66540-307-8 SN - 978-1-66543-141-5 U6 - https://doi.org/10.1109/IMS19712.2021.9575019 SP - 355 EP - 357 PB - IEEE CY - Piscataway ER - TY - GEN A1 - Shrestha, Amit A1 - Dörner, Ralf A1 - Yacoub, Hady A1 - Johansen, Tom K. A1 - Heinrich, Wolfgang A1 - Krozer, Viktor A1 - Rudolph, Matthias A1 - Wentzel, Andreas T1 - A 100 GHz Class-F-Like InP-DHBT PA with 25,4%PAE T2 - 16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, United Kingdom Y1 - 2022 SN - 978-2-87487-064-4 SN - 978-1-6654-4722-5 U6 - https://doi.org/10.23919/EuMIC50153.2022.9783638 SP - 225 EP - 228 ER - TY - GEN A1 - Haque, Sanaul A1 - Schnieder, Frank A1 - Hilt, Oliver A1 - Dörner, Ralf A1 - Brunner, Frank A1 - Rudolph, Matthias T1 - Noise Medeling of GaN/AIN HEMT T2 - 16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, United Kingdom Y1 - 2022 SN - 978-2-87487-064-4 SN - 978-1-6654-4722-5 U6 - https://doi.org/10.23919/EuMIC50153.2022.9783992 SP - 185 EP - 188 ER - TY - GEN A1 - Rao, Megha Krishnaji A1 - Dörner, Ralf A1 - Yazdani, Hossein A1 - Rudolph, Matthias T1 - GaN-HEMT Based Common-Gate LNA MMIC with Integrated Switch for Compact 5G Transceivers T2 - IEEE Microwaves, Antennas, and Propagation Conference (MAPCON) Y1 - 2022 SN - 978-1-6654-5203-8 SN - 978-1-6654-5204-5 U6 - https://doi.org/10.1109/MAPCON56011.2022.10047410 SP - 1104 EP - 1107 ER - TY - GEN A1 - Rao, Megha Krishnaji A1 - Dörner, Ralf A1 - Chevtchenko, Serguei A. A1 - Haque, Sanaul A1 - Rudolph, Matthias T1 - Common-Gate LNA MMIC With Switching Feature Using GaN-HEMT for 5G RF Front-Ende T2 - IEEE Microwave and Wireless Technology Letters Y1 - 2023 U6 - https://doi.org/10.1109/LMWT.2023.3306177 SN - 2771-9588 SN - 2771-957X VL - 33 IS - 10 SP - 1446 EP - 1449 ER -