TY - GEN A1 - Kaule, Evelyne A1 - Andrei, Cristina A1 - Gerlich, Stefan A1 - Dörner, Ralf A1 - Rudolph, Matthias T1 - Limiting the Output Power of Rugged GaN LNAs T2 - 14th European Microwave Integrated Circuits Conference (EuMIC) N2 - Rugged GaN HEMT low-noise amplifiers are well established, but the common concept of achieving ruggedness by applying the gate supply voltage through a high ohmic resistance might not be sufficient in addition to control the maximum output power. This paper shifts the focus to the protection of subsequent stages and proposes a circuit concept based on an output attenuator and an adaptive drain supply. It is shown that the concept implementation provides an attenuation of up to 28dB under input overdrive condition while leaving small-signal noise Figure unaffected. KW - Power generation; Logic Gates; Gallium nitride; Attenuators; HEMTs; Printed circuits; Power measurement; Limit; GaN; HEMT; ruggedness; low noise amplifier (LNA); receiver Y1 - 2019 SN - 978-2-87487-056-9 SN - 978-1-7281-0768-4 U6 - https://doi.org/10.23919/EuMIC.2019.8909653 SP - 240 EP - 242 CY - Paris, France ER - TY - GEN A1 - Kaule, Evelyne A1 - Andrei, Cristina A1 - Gerlich, Stefan A1 - Dörner, Ralf A1 - Rudolph, Matthias T1 - Limiting the Output Power of Rugged GaN LNAs T2 - Proceedings of 49th European Microwave Conference (EuMC) N2 - Rugged GaN HEMT low-noise amplifiers are well established, but the common concept of achieving ruggedness by applying the gate supply voltage through a high ohmic resistance might not be sufficient in addition to control the maximum output power. This paper shifts the focus to the protection of subsequent stages and proposes a circuit concept based on an output attenuator and an adaptive drain supply. It is shown that the concept implementation provides an attenuation of up to 28 dB under input overdrive condition while leaving small-signal noise figure unaffected. KW - Power generation; Logic Gates; Gallium nitride; Attenuators; HEMTs; Printed circuits; Power measurement; Limit; GaN; HEMT; ruggedness; low noise amplifier (LNA); receiver Y1 - 2019 SN - 978-2-87487-055-2 SN - 978-1-7281-1798-0 U6 - https://doi.org/10.23919/EuMC.2019.8910675 SP - 794 EP - 796 CY - Paris, France ER - TY - GEN A1 - Nasser, Caram A1 - Luo, Peng A1 - Schnieder, Frank A1 - Rudolph, Matthias A1 - Ritter, Dan T1 - Simulation of the RF Power Performance of a GaN HFET and Comparison to Experiment T2 - IEEE Transactions on Electron Devices Y1 - 2019 U6 - https://doi.org/10.1109/TED.2019.2907484 SN - 0018-9383 SN - 1557-9646 VL - 66 IS - 5 SP - 2146 EP - 2150 ER - TY - GEN A1 - Griebel, Wolfgang A1 - Rudolph, Matthias A1 - Rohde, Ulrich L. T1 - Added Noise in Oscillators Caused by the Transistor Base Emitter Breakdown Phenomenon T2 - IETE Journal of Research Y1 - 2020 U6 - https://doi.org/10.1080/03772063.2020.1847702 SN - 0974-780X SP - 1 EP - 11 ER - TY - GEN A1 - Andrei, Cristina A1 - Rudolph, Matthias T1 - Properties of GaN LNAs for Front-End Applications T2 - WFC Towards A One-Chip Solution for GaN Front-Ends, Microwave Symposiums, Boston, 2019 Y1 - 2019 UR - https://www.b-tu.de/en/endowed-chair-rf-and-microwave-techniques/publications/publications#c208430 ER - TY - GEN A1 - Le, Quang Huy A1 - Huynh, Dang Khoa A1 - Wang, Defu A1 - Kämpfe, Thomas A1 - Rudolph, Matthias T1 - Small-Signal Modelling of mm-Wave MOSFET up to 110 GHz in 22nm FDSOI Technology T2 - Proceedings of the 2019 IEEE Asia-Pacific Microwave Conference (APMC) : 10-13 December 2019, Marina Bay Sands, Singapore Y1 - 2019 SN - 978-1-7281-3517-5 U6 - https://doi.org/10.1109/APMC46564.2019.9038620 SP - 222 EP - 224 PB - IEEE CY - Piscataway, NJ ER - TY - GEN A1 - Shivan, T. A1 - Kaule, Evelyne A1 - Hossain, M. A1 - Dörner, Ralf A1 - Johansen, Tom K. A1 - Stoppel, Dimitri A1 - Boppel, S. A1 - Heinrich, Wolfgang A1 - Krozer, Viktor A1 - Rudolph, Matthias T1 - Design and modeling of a ultra-wideband low-noise distributend amplifier in InP DHBT technology T2 - International Journal of Microwave and Wireless Technologies Y1 - 2019 U6 - https://doi.org/10.1017/S1759078719000515 SN - 1759-0795 N1 - MIKON 2018 / EuMW 2018 (Part II) VL - 11 IS - 7 SP - 635 EP - 644 ER - TY - GEN A1 - Luo, Peng A1 - Schnieder, Frank A1 - Bengtsson, Olof A1 - Vadalà, Valeria A1 - Raffo, Antonio A1 - Heinrich, Wolfgang A1 - Rudolph, Matthias T1 - A streamlined drain-lag model for GaN HEMTs based on pulsed S-parameter measurements T2 - International Journal of Microwave and Wireless Technologies Y1 - 2019 U6 - https://doi.org/10.1017/S1759078719000060 SN - 1759-0787 SN - 1759-0795 VL - 11 IS - 2 SP - 121 EP - 129 ER - TY - GEN A1 - Le, Quang Huy A1 - Huynh, Dang Khoa A1 - Wang, D. A1 - Zhao, Zhixing A1 - Lehmann, Steffen A1 - Kämpfe, Thomas A1 - Rudolph, Matthias T1 - W-Band Noise Characterization with Back-Gate Effects for Advanced 22nm FDSOI mm-Wave MOSFETs T2 - 2020 IEEE Radio Frequency Integrated Circuits Symposium (RFIC). 4-6 Aug. 2020, Los Angeles, CA, USA Y1 - 2020 SN - 978-1-7281-6809-8 SN - 978-1-7281-6810-4 U6 - https://doi.org/10.1109/RFIC49505.2020.9218369 SN - 2375-0995 SN - 1529-2517 SP - 131 EP - 134 ER - TY - GEN A1 - Kaule, Evelyne A1 - Dörner, Ralf A1 - Weimann, Nils A1 - Rudolph, Matthias T1 - Modeling the Noise of Transferred-Substrate InP DHBTs at Highest Frequencies T2 - 2020 German Microwave Conference (GeMiC), 09-11 March 2020 , Cottbus Y1 - 2020 UR - https://ieeexplore.ieee.org/document/9080188 SN - 978-3-9820-3971-8 SN - 978-1-7281-4206-7 SN - 2167-8022 SP - 52 EP - 55 ER - TY - GEN A1 - Huynh, Dang Khoa A1 - Le, Quang Huy A1 - Duhan, Pardeep A1 - Wang, Defu A1 - Kämpfe, Thomas A1 - Rudolph, Matthias T1 - Analysis of Hot-Carrier Degradation in 22nm FDSOI Transistors Using RF Small-Signal Characteristics T2 - 2020 German Microwave Conference (GeMiC), 09-11 March 2020, Cottbus, Germany Y1 - 2020 UR - https://ieeexplore.ieee.org/abstract/document/9080227 SN - 978-3-9820-3971-8 SN - 978-1-7281-4206-7 SN - 2167-8022 SP - 244 EP - 247 PB - IEEE CY - Piscataway ER - TY - GEN A1 - Erkelenz, Kevin A1 - Sriperumbuduri, Venkata Pawan A1 - Flisgen, Thomas A1 - Rudolph, Matthias A1 - Johansen, Tom K. A1 - Heinrich, Wolfgang A1 - Wentzel, Andreas T1 - Output Matching Network Design for Highly Efficient InP-DHBT W-Band PAs Utilizing a Defected Ground Structure T2 - 2020 German Microwave Conference (GeMiC), 09-11 March 2020, Cottbus, Germany Y1 - 2020 UR - https://ieeexplore.ieee.org/document/9080208 SN - 978-3-9820-3971-8 SN - 978-1-7281-4206-7 N1 - INSPEC Accession Number: 19575344 SP - 268 EP - 271 PB - IEEE ER - TY - GEN A1 - Krause, Sascha A1 - Beleniotis, Petros A1 - Bengtsson, Olof A1 - Rudolph, Matthias A1 - Heinrich, Wolfgang T1 - Characterization of the Impairment and Recovery of GaN-HEMTs in Low-Noise Amplifiers under Input Overdrive T2 - 2021 IEEE MTT-S International Microwave Symposium (IMS), 07-25 June 2021, Atlanta, GA, USA Y1 - 2021 SN - 978-1-6654-0307-8 SN - 978-1-6654-3141-5 U6 - https://doi.org/10.1109/IMS19712.2021.9574839 SN - 2576-7216 SN - 0149-645X SP - 515 EP - 518 ER - TY - GEN A1 - Le, Quang Huy A1 - Huynh, Dang Khoa A1 - Lehmann, Steffen A1 - Zhao, Zhixing A1 - Kämpfe, Thomas A1 - Rudolph, Matthias T1 - Empirical Large-Signal Medoling of mm-Wave FDSOI CMOS Based on Angelov Model T2 - IEEE Transactions on Electron Devices Y1 - 2021 U6 - https://doi.org/10.1109/TED.2021.3061318 SN - 1557-9646 SN - 0018-9383 VL - 68 IS - 4 SP - 1446 EP - 1453 ER - TY - BOOK A1 - Vendelin, George D. A1 - Pavio, Anthony M. A1 - Rohde, Ulrich L. A1 - Rudolph, Matthias T1 - Microwave circuit design:using linear and nonlinear techniques Y1 - 2021 SN - 978-1-118-44975-2 SN - 978-1-119-74169-5 PB - Wiley CY - Hoboken, N.J. ET - Third edition ER - TY - GEN A1 - Beleniotis, Petros A1 - Schnieder, Frank A1 - Rudolph, Matthias T1 - Simulating Drain Lag of GaN HEMTs with physics-based ASM Model T2 - 2020 15th European Microwave Integrated Circuits Conference (EuMIC), 10-15 January 2021, Utrecht, Netherlands Y1 - 2021 UR - https://ieeexplore.ieee.org/document/9337389 SN - 978-2-87487-060-6 SN - 978-1-7281-7040-4 SP - 165 EP - 168 ER - TY - BOOK A1 - Heymann, Peter A1 - Rudolph, Matthias T1 - A Guido to Noise in Microwave Circuits: Devices, Circuits and Measurement Y1 - 2021 SN - 978-1-119-85936-9 PB - IEEE Press [u.a.] CY - Piscataway, NJ ER - TY - GEN A1 - Krause, Sascha A1 - Michler, Fabian A1 - Kölpin, Alexander A1 - Rudolph, Matthias A1 - Heinrich, Wolfgang T1 - A Digital Correction Method for Increased Dynamic Range in Interferometric Six-Port Radars T2 - IEEE Microwave and Wireless Components Letters Y1 - 2021 U6 - https://doi.org/10.1109/LMWC.2021.3084338 SN - 1558-1764 SN - 1531-1309 VL - 31 IS - 8 SP - 997 EP - 1000 ER - TY - GEN A1 - Rudolph, Matthias A1 - Apte, Anisha M. T1 - Nonlinear Noise Modeling: Using Nonlinear Circuit Simulators to Simulate Noise in the Nonlinear Domain T2 - IEEE Microwave Magazine Y1 - 2021 U6 - https://doi.org/10.1109/MMM.2021.3069538 SN - 1557-9581 VL - 22 IS - 7 SP - 47 EP - 64 ER - TY - GEN A1 - Sriperumbuduri, Venkata Pawan A1 - Yacoub, Hady A1 - Johansen, Tom K. A1 - Wentzel, Andreas A1 - Dörner, Ralf A1 - Rudolph, Matthias T1 - Modeling Base-Collector Heterojunction Barrier Effect in InP DHBTs for Improved Large Singal Performance T2 - 2021 IEEE/MTT-S International Microwave Symposium : June 2021, Atlanta, Georgia, USA/20-25 June 2021, virtual event Y1 - 2021 SN - 978-1-66540-307-8 SN - 978-1-66543-141-5 U6 - https://doi.org/10.1109/IMS19712.2021.9575019 SP - 355 EP - 357 PB - IEEE CY - Piscataway ER - TY - GEN A1 - Shrestha, Amit A1 - Dörner, Ralf A1 - Yacoub, Hady A1 - Johansen, Tom K. A1 - Heinrich, Wolfgang A1 - Krozer, Viktor A1 - Rudolph, Matthias A1 - Wentzel, Andreas T1 - A 100 GHz Class-F-Like InP-DHBT PA with 25,4%PAE T2 - 16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, United Kingdom Y1 - 2022 SN - 978-2-87487-064-4 SN - 978-1-6654-4722-5 U6 - https://doi.org/10.23919/EuMIC50153.2022.9783638 SP - 225 EP - 228 ER - TY - GEN A1 - Le, Quang Huy A1 - Huynh, Dang Khoa A1 - Lehmann, Steffen A1 - Zhao, Zhixing A1 - Kämpfe, Thomas A1 - Rudolph, Matthias T1 - Analysis of the Relaxed Contacted-Poly-Pitch Effect on the RF Performance of Strained-SiGe-Channel p-FETs in 22 nm FDSOI Technology T2 - 16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, United Kingdom Y1 - 2022 SN - 978-2-87487-064-4 SN - 978-1-6654-4722-5 U6 - https://doi.org/10.23919/EuMIC50153.2022.9783713 SP - 22 EP - 25 PB - IEEE ER - TY - GEN A1 - Kaule, Evelyne A1 - Andrei, Cristina A1 - Rudolph, Matthias T1 - Output Power Limited Rugged GaN LNA MMIC T2 - 16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, United Kingdom Y1 - 2022 SN - 978-2-87487-064-4 SN - 978-1-6654-4722-5 U6 - https://doi.org/10.23919/EUMIC50153.2022.9784020 SP - 133 EP - 135 ER - TY - GEN A1 - Huynh, Dang Khoa A1 - Le, Quang Huy A1 - Lehmann, Steffen A1 - Zhao, Zhixing A1 - Bossu, Germain A1 - Arfaoui, Wafa A1 - Wang, Defu A1 - Kämpfe, Thomas A1 - Rudolph, Matthias T1 - Analysis of RF Stress Influence on Large-Signal Performance of 22nm FDSOI CMOS Transistors utilizing Waveform Measurement T2 - 16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, United Kingdom Y1 - 2022 SN - 978-2-87487-064-4 SN - 978-1-6654-4722-5 U6 - https://doi.org/10.23919/EuMIC50153.2022.9783930 SP - 382 EP - 385 ER - TY - GEN A1 - Haque, Sanaul A1 - Schnieder, Frank A1 - Hilt, Oliver A1 - Dörner, Ralf A1 - Brunner, Frank A1 - Rudolph, Matthias T1 - Noise Medeling of GaN/AIN HEMT T2 - 16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, United Kingdom Y1 - 2022 SN - 978-2-87487-064-4 SN - 978-1-6654-4722-5 U6 - https://doi.org/10.23919/EuMIC50153.2022.9783992 SP - 185 EP - 188 ER - TY - GEN A1 - Beleniotis, Petros A1 - Chevtchenko, Serguei A. A1 - Rudolph, Matthias T1 - Statistical Medeling of GaN HEMTs by Direct Transfer of Veriations to Model Parameters T2 - 16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, United Kingdom Y1 - 2022 SN - 978-2-87487-064-4 SN - 978-1-6654-4722-5 U6 - https://doi.org/10.23919/EuMIC50153.2022.9783780 SP - 63 EP - 66 ER - TY - GEN A1 - Le, Quang Huy A1 - Huynh, Dang Khoa A1 - Nayak, Anurag A1 - Lehmann, Steffen A1 - Zhao, Zhixing A1 - Kämpfe, Thomas A1 - Rudolph, Matthias T1 - Large-Signal Medeling for Nonlinear Analysis of Experimental Devices in 22nm FDSOI Technology T2 - 16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, UK Y1 - 2022 SN - 978-2-87487-064-4 SN - 978-1-6654-4722-5 U6 - https://doi.org/10.23919/EuMIC50153.2022.9784055 SP - 17 EP - 20 ER - TY - GEN A1 - Tomaz, Antonio A1 - Gerlich, Stefan A1 - Rudolph, Matthias A1 - Andrei, Cristina T1 - A Novel System for Recovery Time Measurements of GaN-Based Low-Noise Amplifiers T2 - 2022 14th German Microwave Conference (GeMiC), Ulm, 16-18 May 2022 N2 - A novel setup allowing for recovery time measurement of robust GaN LNA is presented in this paper. The setup is based on an PNA-X vector network analyzer and allows for the characterization of the LNA's small-signal gain, while it also monitors overdrive pulse power and reflected pulse power. The system setup and operation is shown in detail. As an example, two different GaN LNAs were measured in order to validate the test setup. Y1 - 2022 UR - https://ieeexplore.ieee.org/document/9783536 SN - 978-3-9820397-2-5 SN - 2167-8022 SP - 65 EP - 68 PB - IEEE ER - TY - GEN A1 - Krause, Sascha A1 - Zervos, Christos A1 - Beleniotis, Petros A1 - Ritter, Dan A1 - Rudolph, Matthias A1 - Heinrich, Wolfgang T1 - On the Influence of Transistor Dimensions on the Dispersive Behavior in A1GaN/GaN HEMT-Based PAs and Robust LNAs T2 - IEEE/MTT-S International Microwave Symposium - IMS 2022, 19-24 June 2022 Denver, CO, USA Y1 - 2022 SN - 978-1-6654-9613-1 SN - 978-1-6654-9614-8 U6 - https://doi.org/10.1109/IMS37962.2022.9865474 SP - 914 EP - 917 PB - IEEE CY - Piscataway ER -