TY - GEN A1 - Liero, Armin A1 - Dewitz, Mike A1 - Kühn, Silvio A1 - Chaturvedi, Nidhi A1 - Xu, Jijun A1 - Rudolph, Matthias T1 - On the Recovery Time of Highly Robust Low-Noise Amplifiers T2 - IEEE transactions on microwave theory and techniques KW - Amplifier noise KW - integrated circuit noise KW - microwave field-effect transistor (FET) amplifiers KW - monolithic microwave integrated circuit (MMIC) amplifiers KW - noise KW - semiconductor device noise KW - integrated circuit (MMIC) amplifiers Y1 - 2010 U6 - https://doi.org/10.1109/TMTT.2010.2041519 SN - 0018-9480 VL - 58 IS - 4 SP - 781 EP - 787 ER - TY - CHAP A1 - Rudolph, Matthias A1 - Andrei, Cristina A1 - Liero, Armin A1 - Lossy, Richard A1 - Heinrich, Wolfgang T1 - Highly Linear Broadband GaN-based Low-noise Amplifier Y1 - 2010 ER - TY - CHAP A1 - Rudolph, Matthias A1 - Flucke, Jens A1 - Schnieder, Frank A1 - Schmückle, Franz-Josef A1 - Heinrich, Wolfgang T1 - On the magnetic coupling between bondwires in power-transistor packages Y1 - 2010 ER - TY - CHAP A1 - Rudolph, Matthias T1 - Modeling GaN Power Transistors Y1 - 2010 U6 - https://doi.org/http://dx.doi.org/10.1109/WAMICON.2010.5461846 ER - TY - CHAP A1 - Rudolph, Matthias T1 - Compact HBT modeling: status and challenges Y1 - 2010 U6 - https://doi.org/10.1109/MWSYM.2010.5517597 ER - TY - CHAP A1 - Rudolph, Matthias A1 - Bengtsson, Olof A1 - Bent, G. van der A1 - Heinigen, M. van A1 - Vliet, F. F. van T1 - GaN-HEMT VSWR Ruggedness and Amplifier Protection Y1 - 2010 ER - TY - CHAP A1 - Rudolph, Matthias A1 - Mostardinha, H. A1 - Cabral, P. M. A1 - Carvalho, N. B. A1 - Kurpas, Paul A1 - Würfl, Joachim A1 - Pinto, J. C. A1 - Barnes, J. A1 - Garat, F. T1 - GaN RF Oscillator Used in Space Applications Y1 - 2010 U6 - https://doi.org/http://dx.doi.org/10.1109/INMMIC.2010.5480142 ER - TY - CHAP A1 - Rudolph, Matthias A1 - Heinrich, Wolfgang T1 - Assessment of power-transistor package models: distributed versus lumped approach Y1 - 2010 ER - TY - GEN A1 - Rudolph, Matthias A1 - Heymann, Peter A1 - Boss, Hermann T1 - Impact of Receiver Bandwidth and Nonlinearity on Noise Measurement Methods Y1 - 2010 U6 - https://doi.org/http://dx.doi.org/10.1109/MMM.2010.937715 ER - TY - CHAP A1 - Rudolph, Matthias T1 - Noise modeling of GaAs HBTs N2 - Institutskolloquium, IHP Frankfurt (Oder), 2010 Y1 - 2010 ER - TY - CHAP A1 - Rudolph, Matthias T1 - Highly Robust GaN-Based Low-noise Amplifiers N2 - Institutskolloquium, TU Darmstadt, Fachgebiet Mikrowellentechnik, Darmstadt, 2010 Y1 - 2010 ER - TY - BOOK A1 - Rudolph, Matthias T1 - Introduction to Modeling HBTs Y1 - 2006 SN - 1-58053-144-X PB - Artech House CY - Boston, Mass. ER - TY - GEN A1 - Rudolph, Matthias A1 - Dörner, Ralf T1 - Selected Topics on Microwave Measurements, Noise in Devices and Circuits, and TransistorModeling. A Festschrift for Peter Heymann Y1 - 2005 SN - 3-86537-328-3 ER - TY - BOOK A1 - Rudolph, Matthias T1 - Selected Topics on Microwave Measurements, Noise in Devices and Großsignalmodell für GaAs Hetero-Bipolar-Transistoren fürLeistungsanwendungen in der Mobilkommunikation Y1 - 2002 SN - 3-89825-392-9 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Dörner, Ralf A1 - Heymann, Peter T1 - Direct Extraction of HBT Equivalent Circuit Elements Y1 - 1999 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Rheinfelder, C. N. A1 - Beißwanger, F. A1 - Heinrich, Wolfgang T1 - Nonlinear Modeling of SiGe HBTs up to 50 GHz Y1 - 1997 ER - TY - GEN A1 - Rudolph, Matthias A1 - Achouche, M. A1 - Kraus, S. A1 - Spitzbart, Th. A1 - Kurpas, Paul A1 - Rentner, D. A1 - Brunner, F. A1 - Richter, E. A1 - Bergunde, T. A1 - Heymann, Peter A1 - Wolter, P. A1 - Wittrich, H. A1 - Weyers, M. A1 - Würfl, Joachim A1 - Tränkle, Günther T1 - InGaP/GaAs Power HBTs for L-Band Applications Y1 - 1999 ER - TY - CHAP A1 - Rudolph, Matthias A1 - Lenk, Friedrich A1 - Dörner, Ralf A1 - Heymann, Peter T1 - Influence of 2 GHz Harmonic Load-Pull on HBT and MESFET Output Power and Efficiency T2 - 1999 IEEE MTT-S International Microwave Symposium digest, June 13 - 19, 1999, Anaheim Convention Center, Anaheim, California Y1 - 1999 SN - 0-7803-5135-5 SP - 741 EP - 744 PB - Piscataway, NJ CY - IEEE ER - TY - JOUR A1 - Rudolph, Matthias A1 - Dörner, Ralf A1 - Heymann, Peter T1 - On the Gunn Effect in GaAs HBTs Y1 - 2001 ER - TY - CHAP A1 - Rudolph, Matthias A1 - Dörner, Ralf A1 - Heymann, Peter A1 - Lenk, Friedrich T1 - Modeling of Low-Frequency Noise in GaInP/GaAs Hetero-Bipolar-Transistors T2 - 2001 IEEE MTT-S International Microwave Symposium digest, May 20 - 25, 2001, Phoenix Civic Plaza, Phoenix, AZ, 1967 - 1970, Vol.3 Y1 - 2001 SN - 0-7803-6538-0 SP - 1967 EP - 1970 PB - IEEE Service Center CY - Piscataway, NJ ER - TY - CHAP A1 - Lenk, Friedrich A1 - Rudolph, Matthias T1 - New Extraction Algorithm for GaAs-HBTs With Low Intrinsic Base Resistance T2 - IEEE MTT-S International Microwave Symposium digest, June 2 - 7, 2002, Washington State Convention & Trade Center, Seattle, Washington, Vol. 2 Y1 - 2002 SN - 0-7803-7239-5 SP - 725 EP - 728 PB - IEEE Service Center CY - Piscataway, NJ ER - TY - CHAP A1 - Rudolph, Matthias A1 - Lenk, Friedrich A1 - Dörner, Ralf A1 - Heymann, Peter T1 - Towards a Unified Method to Implement Transit-Time Effects in Pi-Topology HBT CompactModels T2 - IEEE MTT-S International Microwave Symposium digest, June 2 - 7, 2002, Washington State Convention & Trade Center, Seattle, Washington, Vol. 2 Y1 - 2002 SN - 0-7803-7239-5 SP - 997 EP - 1000 PB - IEEE Service Center CY - Piscataway, NJ ER - TY - JOUR A1 - Rudolph, Matthias A1 - Dörner, Ralf A1 - Heymann, Peter T1 - GaAs HBT Operating as Integrated V- to W-Band Gunn Oscillator Y1 - 2002 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Schnieder, Frank A1 - Heinrich, Wolfgang T1 - Modeling Emitter Breakdown in GaAs-Based HBTs Y1 - 2002 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Dörner, Ralf T1 - Consistent Modeling of Capacitances and Transit Times of GaAs-Based HBTs Y1 - 2005 ER - TY - GEN A1 - Rudolph, Matthias A1 - Lenk, Friedrich A1 - Llopis, O. A1 - Heinrich, Wolfgang T1 - On the Simulation of Low-Frequency Noise Upconversion in InGaP/GaAs HBTs T2 - IEEE transactions on microwave theory and techniques Y1 - 2006 SN - 0018-9480 VL - 54 IS - 7 SP - 2954 EP - 2961 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Meliani, Chafik T1 - On the Correlation between Eye-Diagram and Frequency Characteristics of GaAs-HBT TWAsfor 20 and 40 Gbps NRZ Signals Y1 - 2006 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Behtash, Reza A1 - Dörner, Ralf A1 - Hirche, Klaus A1 - Wurfl, Joachim A1 - Heinrich, Wolfgang A1 - Tränkle, Günther T1 - Analysis of the Survivability of GaN Low-Noise Amplifiers Y1 - 2007 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Korndörfer, Falk A1 - Heymann, Peter A1 - Heinrich, Wolfgang T1 - Compact Large-Signal Shot-Noise Model for HBTs Y1 - 2008 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Meliani, Chafik A1 - Dörner, Ralf A1 - Heinrich, Wolfgang T1 - Bandwidth Potential of HBT-Based TWAs as a Function of Transistor fmax/fT Ratio Y1 - 2008 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Khalil, I. A1 - Liero, Armin A1 - Lossy, Richard A1 - Heinrich, Wolfgang T1 - GaN HEMT Potential for Low Noise Highly Linear RF Applications Y1 - 2008 ER - TY - GEN A1 - Rudolph, Matthias A1 - Bonani, Fabrizio T1 - Low-Frequency Noise in Nonlinear Systems: Its Impact on RF Performance and Implicationsfor Device Modeling and Circuit Simulation Y1 - 2009 ER - TY - GEN A1 - Rudolph, Matthias A1 - Chaturvedi, Nidhi A1 - Hirche, Klaus A1 - Wurfl, K. A1 - Heinrich, Wolfgang A1 - Tränkle, Günther T1 - Highly Rugged 30 GHz GaN Low-Noise Amplifiers Y1 - 2009 ER - TY - GEN A1 - Rudolph, Matthias A1 - Kraemer, Tomas A1 - Schmückle, Franz-Josef A1 - Würfl, Joachim A1 - Tränkle, Günther T1 - InP DHBT Process in Transferred Substrate Technology with ft and fmax over 400 GHz Y1 - 2009 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Tischler, Th. A1 - Kilk, A. A1 - Heinrich, Wolfgang T1 - Via Arrays for Grounding in Multilayer Packaging - Frequency Limits and Design Rules Y1 - 2003 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Dörner, Ralf T1 - Large-Signal HBT Model Requirements to Predict Nonlinear Behaviour Y1 - 2004 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Dörner, Ralf T1 - Large-Signal Modeling of High-Voltage GaAs Power HBTs Y1 - 2005 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Meliani, Chafik A1 - Heinrich, Wolfgang T1 - A 40 Gbps GaAs-HBT Distributed Amplifier with an Over-fT Cut-Off Frequency: Analyticaland Experimental Study Y1 - 2005 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Behtash, Reza A1 - Hirche, Klaus A1 - Würfl, Joachim A1 - Heinrich, Wolfgang A1 - Tränkle, Günther T1 - A Highly Survivable 3-7 GHz GaN Low-Noise Amplifier Y1 - 2006 ER - TY - GEN A1 - Rudolph, Matthias A1 - Meliani, Chafik A1 - Kurpas, Paul A1 - Schmidt, L. A1 - Rheinfelder, C. N. A1 - Heinrich, Wolfgang T1 - A 2.4 GHz GaAs-HBT Class-E MMIC Amplifier with 65% PAE Y1 - 2007 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Heymann, Peter T1 - On Compact HBT RF Noise Modeling Y1 - 2007 ER - TY - JOUR A1 - Rudolph, Matthias T1 - Limitations of Current Compact Transit-Time Models for III-V-Based HBTs Y1 - 2008 ER - TY - GEN A1 - Rudolph, Matthias A1 - Dewitz, Mike A1 - Liero, Armin A1 - Khalil, I. A1 - Chaturvedi, Nidhi A1 - Wipf, Christian A1 - Bertenburg, R. M. A1 - Miller, J. A1 - Würfl, Joachim A1 - Heinrich, Wolfgang A1 - Tränkle, Günther T1 - Highly Robust X-Band LNA with Extremely Short Recovery Time Y1 - 2009 ER - TY - CHAP A1 - Rudolph, Matthias A1 - Dörner, Ralf A1 - Klapproth, L. A1 - Heymann, Peter T1 - New Algorithm for Extraction of FET Noise Model Parameters Y1 - 1998 ER - TY - CHAP A1 - Rudolph, Matthias A1 - Dörner, Ralf A1 - Heymann, Peter T1 - New GaInP/GaAs-HBT Large-Signal Model for Power Applications Y1 - 1998 ER - TY - CHAP A1 - Rudolph, Matthias A1 - Dörner, Ralf A1 - Heymann, Peter A1 - Richter, E. T1 - Scaling of GaInP/GaAs HBT Equivalent-Circuit Elements Y1 - 1999 ER - TY - CHAP A1 - Rudolph, Matthias A1 - Dörner, Ralf A1 - Heymann, Peter T1 - A Universal Measurement System for Microwave Power Transistors Y1 - 1999 ER - TY - CHAP A1 - Rudolph, Matthias A1 - Dörner, Ralf A1 - Heymann, Peter T1 - Multiharmonic Generator for On-Wafer Phase Calibration of Non-Linear Network Analyzer Y1 - 2001 ER - TY - CHAP A1 - Rudolph, Matthias A1 - Kurpas, Paul A1 - Brunner, F. A1 - Doser, W. A1 - Maaßdorf, Andre A1 - Dörner, Ralf A1 - Blanck, H. A1 - Heinrich, Wolfgang A1 - Würfl, Joachim T1 - Development and Characterization of GaInP/GaAs HBTs for High Voltage Operation Y1 - 2001 ER - TY - CHAP A1 - Rudolph, Matthias A1 - Meliani, Chafik A1 - Hilsenbeck, Jochen A1 - Heinrich, Wolfgang T1 - A GaAs-HBT Distributed Amplifier with Near-fT Cut-off Frequency for High-Bitrate Transmissions Y1 - 2004 ER - TY - CHAP A1 - Rudolph, Matthias A1 - Schnieder, Frank A1 - Heinrich, Wolfgang A1 - Schnieder, Frank T1 - Investigation of Thermal Crunching Effects in Fishbone-Type Layout Power GaAs-HBTs Y1 - 2004 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Dörner, Ralf A1 - Klapproth, L. A1 - Heymann, Peter T1 - An HBT Noise Model Valid up to Transit Frequency Y1 - 1999 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Dörner, Ralf A1 - Klapproth, L. A1 - Heymann, Peter A1 - Prinzler, H. A1 - Böck, Georg T1 - Experimental Evaluation of Microwave Field-EffectTransistor Noise Models Y1 - 1999 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Dörner, Ralf A1 - Heymann, Peter T1 - Harmonic Tuning of Power Transistors by Active Load-Pull Measurement Y1 - 2000 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Dörner, Ralf A1 - Heymann, Peter A1 - Beilenhoff, K. T1 - Scalable GaInP/GaAs HBT Large-Signal Model Y1 - 2000 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Dörner, Ralf A1 - Heymann, Peter T1 - Multiharmonic Generators for Relative Phase Calibration of Nonlinear Network Analyzers Y1 - 2001 ER - TY - GEN A1 - Rudolph, Matthias A1 - Würfl, Joachim A1 - Kurpas, Paul A1 - Brunner, F. A1 - Mai, M. T1 - Degradation properties of MOVPE-grown GaInP/GaAs HBTs under combined temperatureand current stressing Y1 - 2001 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Dörner, Ralf A1 - Heymann, R. A1 - Klapproth, L. A1 - Böck, Georg T1 - Direct Extraction of FET Noise Models from Noise Figure Measurements Y1 - 2002 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Dörner, Ralf A1 - Heymann, R. A1 - Beilenhoff, K. T1 - Unified Model for Collector Charge in Heterojunction Bipolar Transistors Y1 - 2002 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Sheinman, B. A1 - Wasige, E. A1 - Dörner, Ralf A1 - Sidorov, V. A1 - Cohen, S. A1 - Ritter, Dan T1 - A Peeling Algorithm for Extraction of the HBT Small-Signal Equivalent Circuit Y1 - 2002 ER - TY - JOUR A1 - Rudolph, Matthias T1 - Uniqueness Problems in Compact HBT Models Caused by Thermal Effects Y1 - 2004 ER - TY - CHAP A1 - Rudolph, Matthias A1 - Heymann, Peter T1 - The Influence of Microwave Two-Port Noise on Residual Phase Noise in GaAs-HBTs Y1 - 2004 ER - TY - CHAP A1 - Rudolph, Matthias A1 - Meliani, Chafik A1 - Hilsenbeck, Jochen A1 - Heinrich, Wolfgang A1 - Meliani, Chafik T1 - A 40 Gbps Broadband Amplifier for Modulator-Driver Applications Using a GaAs HBT Technology Y1 - 2004 ER - TY - CHAP A1 - Rudolph, Matthias A1 - Dörner, Ralf T1 - Key Issues of Compact Models for GaAs Heterojunction Bipolar Transistors Y1 - 2004 ER - TY - CHAP A1 - Rudolph, Matthias A1 - Meliani, Chafik A1 - Heinrich, Wolfgang T1 - On-Chip GaAs-HBT Broadband-Coupled High-Bitrate Modulator Driver TWAs Y1 - 2005 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Beilenhoff, K. A1 - Dörner, Ralf A1 - Heymann, Peter T1 - Scalable GaInP/GaAs HBT Large-Signal Model Y1 - 2000 ER - TY - CHAP A1 - Lenk, Friedrich A1 - Dörner, Ralf A1 - Rumiantsev, Andrej A1 - Rudolph, Matthias T1 - Calibration Residual Error Propagation Analysis Using Conformal Mapping T2 - 77th ARFTG Microwave Measurement Conference (ARFTG 2011), Baltimore, Maryland, USA, 10 June 2011 Y1 - 2011 SN - 978-1-61284-959-1 PB - Piscataway, NJ CY - IEEE ER - TY - CHAP A1 - Rudolph, Matthias A1 - Engelmann, Jens A1 - Schmückle, Franz-Josef ED - Rudolph, Matthias ED - Root, David E. ED - Fager, Christian T1 - Large and packaged Transistors T2 - Nonlinear Transistor Model Parameter Extraction Techniques Y1 - 2011 SN - 978-0-521-76210-6 SP - 171 EP - 205 PB - Cambridge University Press CY - Cambridge ER - TY - CHAP A1 - Rudolph, Matthias A1 - Schnieder, Frank A1 - Schmückle, Franz-Josef A1 - Heinrich, Wolfgang T1 - An Analysis of Source Connections in GaN Power Transistor Packages T2 - Proceedings, Microwave Conference (GeMiC), 2012 The 7th in Ilmenau, Germany Y1 - 2012 SN - 978-3-9812668-4-9 CY - Ilmenau ER - TY - CHAP A1 - Rudolph, Matthias ED - Rudolph, Matthias ED - Fager, Christian ED - Root, David E. T1 - Introduction T2 - Nonlinear transistor model parameter extraction techniques Y1 - 2012 SN - 978-0-521-76210-6 SP - 1 EP - 17 PB - Cambridge University Press CY - Cambridge ER - TY - BOOK A1 - Rohde, Ulrich L. A1 - Rudolph, Matthias T1 - RF/Microwave Circuit Design for Wireless Applications Y1 - 2012 SN - 978-0-470-90181-6 PB - Wiley CY - Hoboken, NJ ET - 2. ed. ER - TY - CHAP A1 - Rudolph, Matthias A1 - Dörner, Ralf A1 - Ngnintedem, Eric A1 - Heinrich, Wolfgang T1 - Noise Modeling of GaN HEMT Devices T2 - Microwave Integrated Circuits Conference (EuMIC), 2012 7th European , Amsterdam Y1 - 2012 UR - http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=6476772 SN - 978-1-4673-2302-4 SN - 978-2-87487-026-2 SP - 159 EP - 162 PB - IEEE CY - Piscataway, NJ ER - TY - CHAP A1 - Andrei, Cristina A1 - Dörner, Ralf A1 - Bengtsson, Olof A1 - Chevtchenko, Serguei A. A1 - Heinrich, Wolfgang A1 - Rudolph, Matthias T1 - Highly Linear X-Band GaN-Based Low-Noise Amplifier T2 - Signals, Systems, and Electronics (ISSSE), 2012 International Symposium on , Potsdam Y1 - 2012 UR - http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=6362332 SN - 978-1-4673-4454-8 SN - 978-1-4673-4453-1 PB - IEEE CY - Piscataway, NJ ER - TY - GEN A1 - Schnieder, Frank A1 - Rudolph, Matthias T1 - Thermal Coupling in AlGaN/GaN Power Transistors T2 - Frequenz Y1 - 2013 U6 - https://doi.org/10.1515/freq-2012-0031 SN - 2191-6349 SN - 0016-1136 VL - 67 IS - 1-2 SP - 21 EP - 26 ER - TY - GEN A1 - Johansen, Tom K. A1 - Rudolph, Matthias A1 - Jensen, Thomas A1 - Kraemer, Tomas A1 - Weimann, Nils A1 - Schnieder, Frank A1 - Krozer, Viktor A1 - Heinrich, Wolfgang T1 - Modeling of InP HBTs in Transferred-Substrate Technology for Millimeter-Wave Applications T2 - Microwave Integrated Circuits Conference (EuMIC), 2013, 8th European, 6–8 October 2013 Nuremberg, Germany Y1 - 2013 SN - 978-2-87487-032-3 SP - 280 EP - 283 PB - IEEE CY - Piscataway, NJ ER - TY - CHAP A1 - Rudolph, Matthias A1 - Dörner, Ralf T1 - Towards a Large-Signal Noise Model for GaN HEMT Devices T2 - Microwave Integrated Circuits Conference (EuMIC), 2013, 8th European, 6–8 October 2013 Nuremberg, Germany Y1 - 2013 SP - 484 EP - 487 PB - IEEE CY - Piscataway, NJ ER - TY - GEN A1 - Schnieder, Frank A1 - Bengtsson, Olof A1 - Schmückle, Franz-Josef A1 - Rudolph, Matthias A1 - Heinrich, Wolfgang T1 - Simulation of RF Power Distribution in a Packaged GaN Power Transistor Using an Electro-Thermal Large-Signal Description T2 - IEEE transactions on microwave theory and techniques Y1 - 2013 U6 - https://doi.org/10.1109/TMTT.2013.2261089 SN - 0018-9480 VL - 61 IS - 7 SP - 2603 EP - 2609 ER - TY - CHAP A1 - Rudolph, Matthias A1 - Dörner, Ralf T1 - Bias-Dependent Pospieszalski Noise Model for GaN HEMT Devices T2 - GeMiC 2014, German Microwave Conference 2014, March 10 - 12, 2014, Aachen, Germany Y1 - 2014 UR - http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6775103&isnumber=6775099 SN - 978-3-8007-3585-3 PB - VDE-Verl. CY - Berlin [u.a.] ER - TY - GEN A1 - Johansen, Tom K. A1 - Rudolph, Matthias A1 - Jensen, Thomas A1 - Kraemer, Tomas A1 - Weimann, Nils A1 - Schnieder, Frank A1 - Krozer, Viktor A1 - Heinrich, Wolfgang T1 - Small- and large-signal modeling of InP HBTs in transferred-substrate technology T2 - International Journal of Microwave and Wireless Technologies Y1 - 2014 U6 - https://doi.org/10.1017/S1759078714000051 VL - 6 IS - 3-4 SP - 243 EP - 251 ER - TY - CHAP A1 - Koloska, Uwe A1 - Wolff, Matthias A1 - Rudolph, Torsten ED - Mehnert, Dieter T1 - Ein Werkzeug zur automatischen Inventargenerierung T2 - Elektronische Sprachsignalverarbeitung, Tagungsband der zehnten Konferenz, Görlitz, 20. bis 22. September 1999 Y1 - 1999 SN - 3-933592-64-X SP - 160 EP - 165 PB - w.e.b. Universitätsverlag CY - Dresden ER - TY - CHAP A1 - Rudolph, Matthias A1 - Escotte, Laurent A1 - Dörner, Ralf T1 - GaN HEMT Noise Model Performance under Nonlinear Operation T2 - Proceedings, 9th European Microwave Integrated Circuit Conference (EuMIC) Y1 - 2014 U6 - https://doi.org/10.1109/EuMIC.2014.6997895 SP - 472 EP - 475 PB - IEEE ER - TY - CHAP A1 - Rudolph, Matthias A1 - Escotte, Laurent A1 - Dörner, Ralf T1 - GaN HEMT Noise Model Performance under Nonlinear Operation T2 - Proceedings, 44th European Microwave Conference Y1 - 2014 SN - 978-2-87487-035-4 U6 - https://doi.org/10.1109/EuMC.2014.6986711 SP - 1416 EP - 1419 PB - IEEE ER - TY - GEN A1 - Apte, Anisha M. A1 - Poddar, Ajay K. A1 - Rudolph, Matthias A1 - Rohde, Ulrich L. T1 - A Novel Low Phase Noise X-Band Oscillator T2 - IEEE Microwave Magazine Y1 - 2015 U6 - https://doi.org/10.1109/MMM.2014.2367957 SN - 1527-3342 VL - 16 IS - 1 SP - 127 EP - 135 ER - TY - GEN A1 - Rudolph, Matthias A1 - Escotte, Laurent A1 - Dörner, Ralf T1 - Modeling Nonlinear White Noise in GaN HEMT Devices T2 - Frequenz Y1 - 2015 VL - 69 IS - 1-2 SP - 47 EP - 55 ER - TY - CHAP A1 - Andrei, Cristina A1 - Bengtsson, Olof A1 - Dörner, Ralf A1 - Chevtchenko, Serguei A. A1 - Heinrich, Wolfgang A1 - Rudolph, Matthias T1 - Dynamic behaviour of a Low-Noise Amplifier GaN MMIC under input power overdrive T2 - Proceedings of 45th European Microwave Conference, Paris 2015 Y1 - 2015 U6 - https://doi.org/10.1109/EuMC.2015.7345742 SP - 231 EP - 234 PB - IEEE ER - TY - GEN A1 - Nosaeva, Ksenia A1 - Weimann, Nils A1 - Rudolph, Matthias A1 - John, Wilfred A1 - Krüger, Olaf A1 - Heinrich, Wolfgang T1 - Improved thermal management of InP transistors in transferred-substrate technology with diamond heat-spreading layer T2 - Electronics Letters Y1 - 2015 U6 - https://doi.org/10.1049/el.2015.1135 SN - 1350-911X VL - 51 IS - 13 SP - 1010 EP - 1012 ER - TY - GEN A1 - Nosaeva, Ksenia A1 - Weimann, Nils A1 - Rudolph, Matthias A1 - John, Wilfred A1 - Krüger, Olaf A1 - Heinrich, Wolfgang T1 - Thin ice: Diamond films could more than double the power output achievable with transistors in the ‘Terahertz gap’ by improving thermal management T2 - Electronics Letters Y1 - 2015 U6 - https://doi.org/10.1049/el.2015.1943 SN - 1350-911X VL - 51 IS - 13 SP - S. 959 ER - TY - CHAP A1 - Andrei, Cristina A1 - Bengtsson, Olof A1 - Dörner, Ralf A1 - Chevtchenko, Serguei A. A1 - Rudolph, Matthias T1 - Robust Stacked GaN-Based Low-Noise Amplifier MMIC for Receiver Applications T2 - IEEE MTT-S International Microwave Symposium (IMS), 17-22 May 2015 Y1 - 2015 U6 - https://doi.org/10.1109/MWSYM.2015.7166766 PB - IEEE ER - TY - CHAP A1 - Luo, Peng A1 - Bengtsson, Olof A1 - Rudolph, Matthias T1 - Reliable GaN HEMT Modeling Based on Chalmers Model and Pulsed S-Parameter Measurements T2 - 2016 German Microwave Conference, March 14-16, 2016 Bochum, Germany Y1 - 2016 SN - 978-3-9812668-7-0 U6 - https://doi.org/10.1109/GEMIC.2016.7461650 SP - 441 EP - 444 PB - IEEE CY - Piscataway, NJ ER - TY - GEN A1 - Nosaeva, Ksenia A1 - Al-Sawaf, Thualfiqa A1 - John, Wilfred A1 - Stoppel, Dimitri A1 - Rudolph, Matthias A1 - Schmückle, Franz-Josef A1 - Janke, Bernd A1 - Krüger, Olaf A1 - Krozer, Viktor A1 - Heinrich, Wolfgang A1 - Weimann, Nils T1 - Multifinger Indium Phosphide Double-Heterostructure Transistor Circuit Technology With Integrated Diamond Heat Sink Layer T2 - IEEE Transactions on Electron Devices Y1 - 2016 U6 - https://doi.org/10.1109/TED.2016.2533669 SN - 0018-9383 SN - 1557-9646 VL - 63 IS - 5 SP - 1846 EP - 1852 ER - TY - CHAP A1 - Luo, Peng A1 - Bengtsson, Olof A1 - Rudolph, Matthias T1 - Novel Approach to Trapping Effect Modeling based on Chalmers Model and Pulsed S-Parameter Measurements T2 - 2016 11th European Microwave Integrated Circuits Conference : 3-4 October 2016, London, UK Y1 - 2016 SN - 978-2-87487-044-6 SN - 978-1-4673-9009-5 U6 - https://doi.org/10.1109/EuMIC.2016.7777514 SP - 157 EP - 160 PB - IEEE CY - Piscataway, NJ ER - TY - CHAP A1 - Rudolph, Matthias T1 - GaN HEMTs for low-noise amplification — status and challenges T2 - Integrated Nonlinear Microwave and Millimetre-wave Circuits Workshop (INMMiC), 20-21 April 2017, Graz, Austria Y1 - 2017 SN - 978-1-5090-5862-4 U6 - https://doi.org/10.1109/INMMIC.2017.7927327 PB - IEEE CY - Piscataway, NJ ER - TY - GEN A1 - Apte, Anisha M. A1 - Rohde, Ulrich L. A1 - Poddar, Ajay K. A1 - Rudolph, Matthias T1 - Optimizing Phase-Noise Performance: Theory and Design Techniques for a Crystal Oscillator T2 - IEEE Microwave Magazine Y1 - 2017 U6 - https://doi.org/10.1109/MMM.2017.2679998 SN - 1527-3342 VL - 18 IS - 4 SP - 108 EP - 123 ER - TY - CHAP A1 - Rudolph, Matthias A1 - Andrei, Cristina A1 - Dörner, Ralf A1 - Chevtchenko, Serguei A. A1 - Heinrich, Wolfgang T1 - Noise in GaN HEMTs and Circuits T2 - 24th International Conference on Noise and Fluctuations (ICNF), Vilnius, Lithuania, June 20-23, 2017 Y1 - 2017 SN - 978-1-5090-2760-6 U6 - https://doi.org/10.1109/ICNF.2017.7985978 SP - 1 EP - 4 PB - IEEE CY - Piscataway, NJ ER - TY - CHAP A1 - Bonani, Fabrizio A1 - Rudolph, Matthias T1 - Simulating Noise in Nonlinear Circuits T2 - IEEE MTT-S International Microwave Symposium (IMS), 4-9 June 2017, Honololu, HI, USA, Workshop WSP: Recent Advances in Microwave Noise: from Device Modeling to Network Design and Characterization Y1 - 2017 UR - https://ims2017.org/technical-programs/filter/search/rudolph ER - TY - CHAP A1 - Luo, Peng A1 - Bengtsson, Olof A1 - Rudolph, Matthias T1 - A Drain Lag Model for GaN HEMT based on Chalmers Model and Pulsed S-Parameter Measurements T2 - IEEE MTT-S International Microwave Symposium (IMS), 4-9 June 2017, Honololu, HI, USA Y1 - 2017 SN - 978-1-5090-6360-4 U6 - https://doi.org/10.1109/MWSYM.2017.8059085 SP - 240 EP - 243 PB - IEEE CY - Piscataway, NJ ER - TY - CHAP A1 - Andrei, Cristina A1 - Dörner, Ralf A1 - Chevtchenko, Serguei A. A1 - Heinrich, Wolfgang A1 - Rudolph, Matthias T1 - On the Optimization of GaN HEMT Layout for Highly Rugged Low-Noise Amplifier Design T2 - 12th European Microwave Integrated Circuits Conference (EuMIC), 8-10 Oct. 2017, Nuremberg, Germany Y1 - 2017 SN - 978-2-87487-048-4 U6 - https://doi.org/10.23919/EuMIC.2017.8230705 SP - 244 EP - 247 PB - IEEE CY - Piscataway, NJ ER - TY - CHAP A1 - Kaule, Evelyne A1 - Dörner, Ralf A1 - Weimann, Nils A1 - Rudolph, Matthias T1 - Noise modeling of transferred-substrate InP-DHBTs T2 - IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems (COMCAS), 13-15 Nov. 2017, Tel-Aviv, Israel 2017 Y1 - 2017 SN - 978-1-5386-3169-0 U6 - https://doi.org/10.1109/COMCAS.2017.8244768 SP - 1 EP - 4 PB - IEEE CY - Piscataway, NJ ER - TY - CHAP A1 - Nasser, Caram A1 - Ritter, Dan A1 - Rudolph, Matthias T1 - Bias dependence of the access resistance in GaN HEMTs T2 - 2018 22nd International Microwave and Radar Conference (MIKON), Poznán, May 14-17, 2018, Poland Y1 - 2018 UR - https://ieeexplore.ieee.org/document/8405197 SN - 978-83-949421-1-3 U6 - https://doi.org/10.23919/MIKON.2018.8405197 SP - 271 EP - 273 PB - IEEE CY - Piscataway, NJ ER - TY - CHAP A1 - Luo, Peng A1 - Schnieder, Frank A1 - Rudolph, Matthias T1 - Chalmers GaN HEMT charge model revisited T2 - German Microwave Conference (GeMiC), 12-14 March 2018, Freiburg, Germany Y1 - 2018 SN - 978-3-9812668-8-7 U6 - https://doi.org/10.23919/GEMIC.2018.8335055 SP - 164 EP - 167 PB - IEEE CY - Piscataway, NJ ER - TY - CHAP A1 - Luo, Peng A1 - Schnieder, Frank A1 - Bengtsson, Olof A1 - Heinrich, Wolfgang A1 - Rudolph, Matthias T1 - Modeling the Virtual Gate Voltage in Dispersive GaN HEMTs T2 - IEEE/MTT-S International Microwave Symposium, 10-15 June 2018, Philadelphia, PA, USA Y1 - 2018 SN - 978-1-5386-5067-7 U6 - https://doi.org/10.1109/MWSYM.2018.8439389 SP - 728 EP - 731 PB - IEEE CY - Piscataway, NJ ER -