TY - GEN A1 - Sriperumbuduri, Venkata Pawan A1 - Yacoub, Hady A1 - Johansen, Tom K. A1 - Wentzel, Andreas A1 - Dörner, Ralf A1 - Rudolph, Matthias T1 - Modeling Base-Collector Heterojunction Barrier Effect in InP DHBTs for Improved Large Singal Performance T2 - 2021 IEEE/MTT-S International Microwave Symposium : June 2021, Atlanta, Georgia, USA/20-25 June 2021, virtual event Y1 - 2021 SN - 978-1-66540-307-8 SN - 978-1-66543-141-5 U6 - https://doi.org/10.1109/IMS19712.2021.9575019 SP - 355 EP - 357 PB - IEEE CY - Piscataway ER - TY - GEN A1 - Shrestha, Amit A1 - Dörner, Ralf A1 - Yacoub, Hady A1 - Johansen, Tom K. A1 - Heinrich, Wolfgang A1 - Krozer, Viktor A1 - Rudolph, Matthias A1 - Wentzel, Andreas T1 - A 100 GHz Class-F-Like InP-DHBT PA with 25,4%PAE T2 - 16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, United Kingdom Y1 - 2022 SN - 978-2-87487-064-4 SN - 978-1-6654-4722-5 U6 - https://doi.org/10.23919/EuMIC50153.2022.9783638 SP - 225 EP - 228 ER - TY - GEN A1 - Le, Quang Huy A1 - Huynh, Dang Khoa A1 - Lehmann, Steffen A1 - Zhao, Zhixing A1 - Kämpfe, Thomas A1 - Rudolph, Matthias T1 - Analysis of the Relaxed Contacted-Poly-Pitch Effect on the RF Performance of Strained-SiGe-Channel p-FETs in 22 nm FDSOI Technology T2 - 16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, United Kingdom Y1 - 2022 SN - 978-2-87487-064-4 SN - 978-1-6654-4722-5 U6 - https://doi.org/10.23919/EuMIC50153.2022.9783713 SP - 22 EP - 25 PB - IEEE ER - TY - GEN A1 - Kaule, Evelyne A1 - Andrei, Cristina A1 - Rudolph, Matthias T1 - Output Power Limited Rugged GaN LNA MMIC T2 - 16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, United Kingdom Y1 - 2022 SN - 978-2-87487-064-4 SN - 978-1-6654-4722-5 U6 - https://doi.org/10.23919/EUMIC50153.2022.9784020 SP - 133 EP - 135 ER - TY - GEN A1 - Huynh, Dang Khoa A1 - Le, Quang Huy A1 - Lehmann, Steffen A1 - Zhao, Zhixing A1 - Bossu, Germain A1 - Arfaoui, Wafa A1 - Wang, Defu A1 - Kämpfe, Thomas A1 - Rudolph, Matthias T1 - Analysis of RF Stress Influence on Large-Signal Performance of 22nm FDSOI CMOS Transistors utilizing Waveform Measurement T2 - 16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, United Kingdom Y1 - 2022 SN - 978-2-87487-064-4 SN - 978-1-6654-4722-5 U6 - https://doi.org/10.23919/EuMIC50153.2022.9783930 SP - 382 EP - 385 ER - TY - GEN A1 - Haque, Sanaul A1 - Schnieder, Frank A1 - Hilt, Oliver A1 - Dörner, Ralf A1 - Brunner, Frank A1 - Rudolph, Matthias T1 - Noise Medeling of GaN/AIN HEMT T2 - 16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, United Kingdom Y1 - 2022 SN - 978-2-87487-064-4 SN - 978-1-6654-4722-5 U6 - https://doi.org/10.23919/EuMIC50153.2022.9783992 SP - 185 EP - 188 ER - TY - GEN A1 - Beleniotis, Petros A1 - Chevtchenko, Serguei A. A1 - Rudolph, Matthias T1 - Statistical Medeling of GaN HEMTs by Direct Transfer of Veriations to Model Parameters T2 - 16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, United Kingdom Y1 - 2022 SN - 978-2-87487-064-4 SN - 978-1-6654-4722-5 U6 - https://doi.org/10.23919/EuMIC50153.2022.9783780 SP - 63 EP - 66 ER - TY - GEN A1 - Le, Quang Huy A1 - Huynh, Dang Khoa A1 - Nayak, Anurag A1 - Lehmann, Steffen A1 - Zhao, Zhixing A1 - Kämpfe, Thomas A1 - Rudolph, Matthias T1 - Large-Signal Medeling for Nonlinear Analysis of Experimental Devices in 22nm FDSOI Technology T2 - 16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, UK Y1 - 2022 SN - 978-2-87487-064-4 SN - 978-1-6654-4722-5 U6 - https://doi.org/10.23919/EuMIC50153.2022.9784055 SP - 17 EP - 20 ER - TY - GEN A1 - Tomaz, Antonio A1 - Gerlich, Stefan A1 - Rudolph, Matthias A1 - Andrei, Cristina T1 - A Novel System for Recovery Time Measurements of GaN-Based Low-Noise Amplifiers T2 - 2022 14th German Microwave Conference (GeMiC), Ulm, 16-18 May 2022 N2 - A novel setup allowing for recovery time measurement of robust GaN LNA is presented in this paper. The setup is based on an PNA-X vector network analyzer and allows for the characterization of the LNA's small-signal gain, while it also monitors overdrive pulse power and reflected pulse power. The system setup and operation is shown in detail. As an example, two different GaN LNAs were measured in order to validate the test setup. Y1 - 2022 UR - https://ieeexplore.ieee.org/document/9783536 SN - 978-3-9820397-2-5 SN - 2167-8022 SP - 65 EP - 68 PB - IEEE ER - TY - GEN A1 - Krause, Sascha A1 - Zervos, Christos A1 - Beleniotis, Petros A1 - Ritter, Dan A1 - Rudolph, Matthias A1 - Heinrich, Wolfgang T1 - On the Influence of Transistor Dimensions on the Dispersive Behavior in A1GaN/GaN HEMT-Based PAs and Robust LNAs T2 - IEEE/MTT-S International Microwave Symposium - IMS 2022, 19-24 June 2022 Denver, CO, USA Y1 - 2022 SN - 978-1-6654-9613-1 SN - 978-1-6654-9614-8 U6 - https://doi.org/10.1109/IMS37962.2022.9865474 SP - 914 EP - 917 PB - IEEE CY - Piscataway ER - TY - GEN A1 - Beleniotis, Petros A1 - Schnieder, Frank A1 - Krause, Sascha A1 - Haque, Sanaul A1 - Rudolph, Matthias T1 - An efficient drain-lag model for microwave GaN HEMTs based on ASM-HEMT T2 - International Journal of Microwave and Wireless Technologie Y1 - 2022 U6 - https://doi.org/10.1017/S1759078721001483 SN - 1759-0795 VL - 14 IS - 2 SP - 134 EP - 142 ER - TY - GEN A1 - Zervos, Christos A1 - Beleniotis, Petros A1 - Rudolph, Matthias T1 - Prediction of the large-signal GaN HEMT performance using accurate TCAD-compact modeling method T2 - 2024 19th European Microwave Integrated Circuits Conference (EuMIC) Y1 - 2024 U6 - https://doi.org/10.23919/EuMIC61603.2024.10732230 SP - 186 EP - 189 PB - IEEE ER - TY - GEN A1 - Rao, Megha Krishnaji A1 - Wentzel, Andreas A1 - Hoffmann, Thomas A1 - Schellhase, Lars A1 - Chevtchenko, Serguei A. A1 - Rudolph, Matthias T1 - Digital GaN-based transceiver module for future green 5G networks T2 - 2024 54th European Microwave Conference (EuMC) Y1 - 2024 U6 - https://doi.org/10.23919/EuMC61614.2024.10732423 SP - 136 EP - 139 PB - IEEE ER - TY - GEN A1 - Manchanda, Prabhav A1 - Andrei, Cristina A1 - Tost, Frank A1 - Rudolph, Matthias T1 - A pHEMT based power detector for radar applications T2 - 2024 54th European Microwave Conference (EuMC) Y1 - 2024 U6 - https://doi.org/10.23919/EuMC61614.2024.10732043 SP - 992 EP - 995 PB - IEEE ER - TY - GEN A1 - Haque, Sanaul A1 - Andrei, Cristina A1 - Wolf, Mihaela A1 - Hilt, Oliver A1 - Rudolph, Matthias T1 - Switch integrated Ka-Band low noise amplifier in GaN/AlN HEMT technology T2 - 2024 19th European Microwave Integrated Circuits Conference (EuMIC) Y1 - 2024 U6 - https://doi.org/10.23919/EuMIC61603.2024.10732731 SP - 351 EP - 354 PB - IEEE ER - TY - GEN A1 - Zervos, Christos A1 - Beleniotis, Petros A1 - Rudolph, Matthias T1 - A computational analysis of the impact of thin undoped channels in surface-related current collapse of AlGaN/GaN HEMTs T2 - Semiconductor Science and Technology N2 - Abstract This study provides an insight into the impact of thin purely undoped GaN channel thickness (t ch) on surface-related trapping effects in AlGaN/GaN high electron mobility transistors. Our TCAD study suggests that in cases where parasitic gate leakage is the driving trapping mechanism that promotes the injection of electrons from the Schottky gate contact into surface states, this effect can be alleviated by reducing t ch of the undoped GaN channel. We show that by decreasing t ch from 130 to 10 nm, devices exhibit a reduction in gate-related current collapse under the specific class-B RF operating bias conditions as a consequence of a substantial decrease in the off-state gate leakage with reducing t ch. Large-signal simulations revealed an increase by 3 W mm−1 and about 12% output power and power-added efficiency due to the decrease of gate-related collapse. This work, for the first time, highlights the role of a proper purely undoped GaN t ch selection to alleviate gate-related surface trapping in the design of GaN-based microwave power amplifiers. Y1 - 2024 U6 - https://doi.org/10.1088/1361-6641/ad689c SN - 0268-1242 VL - 39 IS - 9 SP - 1 EP - 8 PB - IOP Publishing ER - TY - GEN A1 - Beleniotis, Petros A1 - Krause, Sascha A1 - Zervos, Christos A1 - Rudolph, Matthias T1 - A Physics-Based Model for Slow Gate-Induced Electron Trapping in GaN HEMTs T2 - IEEE Transactions on Electron Devices Y1 - 2024 U6 - https://doi.org/10.1109/TED.2024.3397234 SN - 0018-9383 VL - 71 IS - 7 SP - 4058 EP - 4065 PB - Institute of Electrical and Electronics Engineers (IEEE) ER - TY - GEN A1 - Beleniotis, Petros A1 - Zervos, Christos A1 - Krause, Sascha A1 - Chevtchenko, Serguei A1 - Ritter, Dan A1 - Rudolph, Matthias T1 - Investigation of traps impact on PAE and linearity of AlGaN/GaN HEMTs relying on a combined TCAD–compact model approach T2 - IEEE Transactions on Electron Devices Y1 - 2024 U6 - https://doi.org/10.1109/TED.2024.3388386 SN - 0018-9383 VL - 71 (2024) IS - 6 SP - 3582 EP - 3589 PB - Institute of Electrical and Electronics Engineers (IEEE) ER - TY - GEN A1 - Yazdani, Hossein A1 - Zervos, Christos A1 - Beleniotis, Petros A1 - Brusaterra, Enrico A1 - Hilt, Oliver A1 - Rudolph, Matthias A1 - Würfl, Joachim T1 - Importance of Scaling in RF GaN HEMTs for Reduction of Surface Traps‐Induced Drain Lag T2 - Physica Status Solidi (a) N2 - Drain lag is a well‐known phenomenon that leads to radio frequency performance degradation in AlGaN/GaN high‐electron‐mobility transistors. Herein, it is demonstrated that a reduction of the gate‐to‐drain distance (Lgd) from 2.0 to 0.5 μm results in 7% reduction in the current collapse. This improvement is attributed to a decrease in surface trapping, which, in this case, is found to have a greater impact on current collapse than relatively slow traps in the buffer layer. To support this argument, TCAD simulations are conducted. Load‐pull analysis confirms that scaling the devices to Lgd = 0.5 μm provides 15% better output power density at 10 GHz than Lgd = 2.0 μm. Additionally, a new passivation layer for reduced surface traps exhibits a 20 to 30% higher output power density and at least a 10% improvement in power‐added efficiency at 20 GHz on a nominally identical GaN‐on‐semi‐insulating SiC epi‐wafer. Y1 - 2024 U6 - https://doi.org/10.1002/pssa.202300885 SN - 1862-6300 SP - 1 EP - 8 PB - Wiley ER - TY - GEN A1 - Rudolph, Matthias A1 - Beleniotis, Petros A1 - Zervos, Christos A1 - Rohde, Ulrich L. A1 - Andrei, Cristina T1 - Determining GaN HEMT trap models from MHz load-line measurement : a case study T2 - 2024 15th German Microwave Conference (GeMiC) Y1 - 2024 U6 - https://doi.org/10.23919/GeMiC59120.2024.10485297 SP - 29 EP - 32 PB - IEEE ER -