TY - CHAP A1 - Luo, Peng A1 - Schnieder, Frank A1 - Bengtsson, Olof A1 - Heinrich, Wolfgang A1 - Rudolph, Matthias T1 - Modeling the Virtual Gate Voltage in Dispersive GaN HEMTs T2 - IEEE/MTT-S International Microwave Symposium, 10-15 June 2018, Philadelphia, PA, USA Y1 - 2018 SN - 978-1-5386-5067-7 U6 - https://doi.org/10.1109/MWSYM.2018.8439389 SP - 728 EP - 731 PB - IEEE CY - Piscataway, NJ ER - TY - GEN A1 - Kaule, Evelyne A1 - Andrei, Cristina A1 - Gerlich, Stefan A1 - Dörner, Ralf A1 - Rudolph, Matthias T1 - Limiting the Output Power of Rugged GaN LNAs T2 - 14th European Microwave Integrated Circuits Conference (EuMIC) N2 - Rugged GaN HEMT low-noise amplifiers are well established, but the common concept of achieving ruggedness by applying the gate supply voltage through a high ohmic resistance might not be sufficient in addition to control the maximum output power. This paper shifts the focus to the protection of subsequent stages and proposes a circuit concept based on an output attenuator and an adaptive drain supply. It is shown that the concept implementation provides an attenuation of up to 28dB under input overdrive condition while leaving small-signal noise Figure unaffected. KW - Power generation; Logic Gates; Gallium nitride; Attenuators; HEMTs; Printed circuits; Power measurement; Limit; GaN; HEMT; ruggedness; low noise amplifier (LNA); receiver Y1 - 2019 SN - 978-2-87487-056-9 SN - 978-1-7281-0768-4 U6 - https://doi.org/10.23919/EuMIC.2019.8909653 SP - 240 EP - 242 CY - Paris, France ER - TY - GEN A1 - Kaule, Evelyne A1 - Andrei, Cristina A1 - Gerlich, Stefan A1 - Dörner, Ralf A1 - Rudolph, Matthias T1 - Limiting the Output Power of Rugged GaN LNAs T2 - Proceedings of 49th European Microwave Conference (EuMC) N2 - Rugged GaN HEMT low-noise amplifiers are well established, but the common concept of achieving ruggedness by applying the gate supply voltage through a high ohmic resistance might not be sufficient in addition to control the maximum output power. This paper shifts the focus to the protection of subsequent stages and proposes a circuit concept based on an output attenuator and an adaptive drain supply. It is shown that the concept implementation provides an attenuation of up to 28 dB under input overdrive condition while leaving small-signal noise figure unaffected. KW - Power generation; Logic Gates; Gallium nitride; Attenuators; HEMTs; Printed circuits; Power measurement; Limit; GaN; HEMT; ruggedness; low noise amplifier (LNA); receiver Y1 - 2019 SN - 978-2-87487-055-2 SN - 978-1-7281-1798-0 U6 - https://doi.org/10.23919/EuMC.2019.8910675 SP - 794 EP - 796 CY - Paris, France ER - TY - GEN A1 - Nasser, Caram A1 - Luo, Peng A1 - Schnieder, Frank A1 - Rudolph, Matthias A1 - Ritter, Dan T1 - Simulation of the RF Power Performance of a GaN HFET and Comparison to Experiment T2 - IEEE Transactions on Electron Devices Y1 - 2019 U6 - https://doi.org/10.1109/TED.2019.2907484 SN - 0018-9383 SN - 1557-9646 VL - 66 IS - 5 SP - 2146 EP - 2150 ER - TY - GEN A1 - Griebel, Wolfgang A1 - Rudolph, Matthias A1 - Rohde, Ulrich L. T1 - Added Noise in Oscillators Caused by the Transistor Base Emitter Breakdown Phenomenon T2 - IETE Journal of Research Y1 - 2020 U6 - https://doi.org/10.1080/03772063.2020.1847702 SN - 0974-780X SP - 1 EP - 11 ER - TY - GEN A1 - Andrei, Cristina A1 - Rudolph, Matthias T1 - Properties of GaN LNAs for Front-End Applications T2 - WFC Towards A One-Chip Solution for GaN Front-Ends, Microwave Symposiums, Boston, 2019 Y1 - 2019 UR - https://www.b-tu.de/en/endowed-chair-rf-and-microwave-techniques/publications/publications#c208430 ER - TY - GEN A1 - Le, Quang Huy A1 - Huynh, Dang Khoa A1 - Wang, Defu A1 - Kämpfe, Thomas A1 - Rudolph, Matthias T1 - Small-Signal Modelling of mm-Wave MOSFET up to 110 GHz in 22nm FDSOI Technology T2 - Proceedings of the 2019 IEEE Asia-Pacific Microwave Conference (APMC) : 10-13 December 2019, Marina Bay Sands, Singapore Y1 - 2019 SN - 978-1-7281-3517-5 U6 - https://doi.org/10.1109/APMC46564.2019.9038620 SP - 222 EP - 224 PB - IEEE CY - Piscataway, NJ ER - TY - GEN A1 - Shivan, T. A1 - Kaule, Evelyne A1 - Hossain, M. A1 - Dörner, Ralf A1 - Johansen, Tom K. A1 - Stoppel, Dimitri A1 - Boppel, S. A1 - Heinrich, Wolfgang A1 - Krozer, Viktor A1 - Rudolph, Matthias T1 - Design and modeling of a ultra-wideband low-noise distributend amplifier in InP DHBT technology T2 - International Journal of Microwave and Wireless Technologies Y1 - 2019 U6 - https://doi.org/10.1017/S1759078719000515 SN - 1759-0795 N1 - MIKON 2018 / EuMW 2018 (Part II) VL - 11 IS - 7 SP - 635 EP - 644 ER - TY - GEN A1 - Luo, Peng A1 - Schnieder, Frank A1 - Bengtsson, Olof A1 - Vadalà, Valeria A1 - Raffo, Antonio A1 - Heinrich, Wolfgang A1 - Rudolph, Matthias T1 - A streamlined drain-lag model for GaN HEMTs based on pulsed S-parameter measurements T2 - International Journal of Microwave and Wireless Technologies Y1 - 2019 U6 - https://doi.org/10.1017/S1759078719000060 SN - 1759-0787 SN - 1759-0795 VL - 11 IS - 2 SP - 121 EP - 129 ER - TY - GEN A1 - Le, Quang Huy A1 - Huynh, Dang Khoa A1 - Wang, D. A1 - Zhao, Zhixing A1 - Lehmann, Steffen A1 - Kämpfe, Thomas A1 - Rudolph, Matthias T1 - W-Band Noise Characterization with Back-Gate Effects for Advanced 22nm FDSOI mm-Wave MOSFETs T2 - 2020 IEEE Radio Frequency Integrated Circuits Symposium (RFIC). 4-6 Aug. 2020, Los Angeles, CA, USA Y1 - 2020 SN - 978-1-7281-6809-8 SN - 978-1-7281-6810-4 U6 - https://doi.org/10.1109/RFIC49505.2020.9218369 SN - 2375-0995 SN - 1529-2517 SP - 131 EP - 134 ER - TY - GEN A1 - Kaule, Evelyne A1 - Dörner, Ralf A1 - Weimann, Nils A1 - Rudolph, Matthias T1 - Modeling the Noise of Transferred-Substrate InP DHBTs at Highest Frequencies T2 - 2020 German Microwave Conference (GeMiC), 09-11 March 2020 , Cottbus Y1 - 2020 UR - https://ieeexplore.ieee.org/document/9080188 SN - 978-3-9820-3971-8 SN - 978-1-7281-4206-7 SN - 2167-8022 SP - 52 EP - 55 ER - TY - GEN A1 - Huynh, Dang Khoa A1 - Le, Quang Huy A1 - Duhan, Pardeep A1 - Wang, Defu A1 - Kämpfe, Thomas A1 - Rudolph, Matthias T1 - Analysis of Hot-Carrier Degradation in 22nm FDSOI Transistors Using RF Small-Signal Characteristics T2 - 2020 German Microwave Conference (GeMiC), 09-11 March 2020, Cottbus, Germany Y1 - 2020 UR - https://ieeexplore.ieee.org/abstract/document/9080227 SN - 978-3-9820-3971-8 SN - 978-1-7281-4206-7 SN - 2167-8022 SP - 244 EP - 247 PB - IEEE CY - Piscataway ER - TY - GEN A1 - Erkelenz, Kevin A1 - Sriperumbuduri, Venkata Pawan A1 - Flisgen, Thomas A1 - Rudolph, Matthias A1 - Johansen, Tom K. A1 - Heinrich, Wolfgang A1 - Wentzel, Andreas T1 - Output Matching Network Design for Highly Efficient InP-DHBT W-Band PAs Utilizing a Defected Ground Structure T2 - 2020 German Microwave Conference (GeMiC), 09-11 March 2020, Cottbus, Germany Y1 - 2020 UR - https://ieeexplore.ieee.org/document/9080208 SN - 978-3-9820-3971-8 SN - 978-1-7281-4206-7 N1 - INSPEC Accession Number: 19575344 SP - 268 EP - 271 PB - IEEE ER - TY - GEN A1 - Krause, Sascha A1 - Beleniotis, Petros A1 - Bengtsson, Olof A1 - Rudolph, Matthias A1 - Heinrich, Wolfgang T1 - Characterization of the Impairment and Recovery of GaN-HEMTs in Low-Noise Amplifiers under Input Overdrive T2 - 2021 IEEE MTT-S International Microwave Symposium (IMS), 07-25 June 2021, Atlanta, GA, USA Y1 - 2021 SN - 978-1-6654-0307-8 SN - 978-1-6654-3141-5 U6 - https://doi.org/10.1109/IMS19712.2021.9574839 SN - 2576-7216 SN - 0149-645X SP - 515 EP - 518 ER - TY - GEN A1 - Le, Quang Huy A1 - Huynh, Dang Khoa A1 - Lehmann, Steffen A1 - Zhao, Zhixing A1 - Kämpfe, Thomas A1 - Rudolph, Matthias T1 - Empirical Large-Signal Medoling of mm-Wave FDSOI CMOS Based on Angelov Model T2 - IEEE Transactions on Electron Devices Y1 - 2021 U6 - https://doi.org/10.1109/TED.2021.3061318 SN - 1557-9646 SN - 0018-9383 VL - 68 IS - 4 SP - 1446 EP - 1453 ER - TY - BOOK A1 - Vendelin, George D. A1 - Pavio, Anthony M. A1 - Rohde, Ulrich L. A1 - Rudolph, Matthias T1 - Microwave circuit design:using linear and nonlinear techniques Y1 - 2021 SN - 978-1-118-44975-2 SN - 978-1-119-74169-5 PB - Wiley CY - Hoboken, N.J. ET - Third edition ER - TY - GEN A1 - Beleniotis, Petros A1 - Schnieder, Frank A1 - Rudolph, Matthias T1 - Simulating Drain Lag of GaN HEMTs with physics-based ASM Model T2 - 2020 15th European Microwave Integrated Circuits Conference (EuMIC), 10-15 January 2021, Utrecht, Netherlands Y1 - 2021 UR - https://ieeexplore.ieee.org/document/9337389 SN - 978-2-87487-060-6 SN - 978-1-7281-7040-4 SP - 165 EP - 168 ER - TY - BOOK A1 - Heymann, Peter A1 - Rudolph, Matthias T1 - A Guido to Noise in Microwave Circuits: Devices, Circuits and Measurement Y1 - 2021 SN - 978-1-119-85936-9 PB - IEEE Press [u.a.] CY - Piscataway, NJ ER - TY - GEN A1 - Krause, Sascha A1 - Michler, Fabian A1 - Kölpin, Alexander A1 - Rudolph, Matthias A1 - Heinrich, Wolfgang T1 - A Digital Correction Method for Increased Dynamic Range in Interferometric Six-Port Radars T2 - IEEE Microwave and Wireless Components Letters Y1 - 2021 U6 - https://doi.org/10.1109/LMWC.2021.3084338 SN - 1558-1764 SN - 1531-1309 VL - 31 IS - 8 SP - 997 EP - 1000 ER - TY - GEN A1 - Rudolph, Matthias A1 - Apte, Anisha M. T1 - Nonlinear Noise Modeling: Using Nonlinear Circuit Simulators to Simulate Noise in the Nonlinear Domain T2 - IEEE Microwave Magazine Y1 - 2021 U6 - https://doi.org/10.1109/MMM.2021.3069538 SN - 1557-9581 VL - 22 IS - 7 SP - 47 EP - 64 ER -