TY - GEN A1 - Haque, Sanaul A1 - Schnieder, Frank A1 - Hilt, Oliver A1 - Dörner, Ralf A1 - Brunner, Frank A1 - Rudolph, Matthias T1 - Noise Medeling of GaN/AIN HEMT T2 - 16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, United Kingdom Y1 - 2022 SN - 978-2-87487-064-4 SN - 978-1-6654-4722-5 U6 - https://doi.org/10.23919/EuMIC50153.2022.9783992 SP - 185 EP - 188 ER - TY - GEN A1 - Le, Quang Huy A1 - Huynh, Dang Khoa A1 - Lehmann, Steffen A1 - Zhao, Zhixing A1 - Kämpfe, Thomas A1 - Rudolph, Matthias T1 - Analysis of the Relaxed Contacted-Poly-Pitch Effect on the RF Performance of Strained-SiGe-Channel p-FETs in 22 nm FDSOI Technology T2 - 16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, United Kingdom Y1 - 2022 SN - 978-2-87487-064-4 SN - 978-1-6654-4722-5 U6 - https://doi.org/10.23919/EuMIC50153.2022.9783713 SP - 22 EP - 25 PB - IEEE ER - TY - GEN A1 - Shrestha, Amit A1 - Dörner, Ralf A1 - Yacoub, Hady A1 - Johansen, Tom K. A1 - Heinrich, Wolfgang A1 - Krozer, Viktor A1 - Rudolph, Matthias A1 - Wentzel, Andreas T1 - A 100 GHz Class-F-Like InP-DHBT PA with 25,4%PAE T2 - 16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, United Kingdom Y1 - 2022 SN - 978-2-87487-064-4 SN - 978-1-6654-4722-5 U6 - https://doi.org/10.23919/EuMIC50153.2022.9783638 SP - 225 EP - 228 ER - TY - GEN A1 - Kaule, Evelyne A1 - Andrei, Cristina A1 - Rudolph, Matthias T1 - Output Power Limited Rugged GaN LNA MMIC T2 - 16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, United Kingdom Y1 - 2022 SN - 978-2-87487-064-4 SN - 978-1-6654-4722-5 U6 - https://doi.org/10.23919/EUMIC50153.2022.9784020 SP - 133 EP - 135 ER - TY - GEN A1 - Huynh, Dang Khoa A1 - Le, Quang Huy A1 - Duhan, Pardeep A1 - Wang, Defu A1 - Kämpfe, Thomas A1 - Rudolph, Matthias T1 - Analysis of Hot-Carrier Degradation in 22nm FDSOI Transistors Using RF Small-Signal Characteristics T2 - 2020 German Microwave Conference (GeMiC), 09-11 March 2020, Cottbus, Germany Y1 - 2020 UR - https://ieeexplore.ieee.org/abstract/document/9080227 SN - 978-3-9820-3971-8 SN - 978-1-7281-4206-7 SN - 2167-8022 SP - 244 EP - 247 PB - IEEE CY - Piscataway ER - TY - GEN A1 - Erkelenz, Kevin A1 - Sriperumbuduri, Venkata Pawan A1 - Flisgen, Thomas A1 - Rudolph, Matthias A1 - Johansen, Tom K. A1 - Heinrich, Wolfgang A1 - Wentzel, Andreas T1 - Output Matching Network Design for Highly Efficient InP-DHBT W-Band PAs Utilizing a Defected Ground Structure T2 - 2020 German Microwave Conference (GeMiC), 09-11 March 2020, Cottbus, Germany Y1 - 2020 UR - https://ieeexplore.ieee.org/document/9080208 SN - 978-3-9820-3971-8 SN - 978-1-7281-4206-7 N1 - INSPEC Accession Number: 19575344 SP - 268 EP - 271 PB - IEEE ER - TY - BOOK A1 - Heymann, Peter A1 - Rudolph, Matthias T1 - A Guido to Noise in Microwave Circuits: Devices, Circuits and Measurement Y1 - 2021 SN - 978-1-119-85936-9 PB - IEEE Press [u.a.] CY - Piscataway, NJ ER - TY - GEN A1 - Krause, Sascha A1 - Beleniotis, Petros A1 - Bengtsson, Olof A1 - Rudolph, Matthias A1 - Heinrich, Wolfgang T1 - Characterization of the Impairment and Recovery of GaN-HEMTs in Low-Noise Amplifiers under Input Overdrive T2 - 2021 IEEE MTT-S International Microwave Symposium (IMS), 07-25 June 2021, Atlanta, GA, USA Y1 - 2021 SN - 978-1-6654-0307-8 SN - 978-1-6654-3141-5 U6 - https://doi.org/10.1109/IMS19712.2021.9574839 SN - 2576-7216 SN - 0149-645X SP - 515 EP - 518 ER - TY - GEN A1 - Beleniotis, Petros A1 - Schnieder, Frank A1 - Rudolph, Matthias T1 - Simulating Drain Lag of GaN HEMTs with physics-based ASM Model T2 - 2020 15th European Microwave Integrated Circuits Conference (EuMIC), 10-15 January 2021, Utrecht, Netherlands Y1 - 2021 UR - https://ieeexplore.ieee.org/document/9337389 SN - 978-2-87487-060-6 SN - 978-1-7281-7040-4 SP - 165 EP - 168 ER - TY - BOOK A1 - Vendelin, George D. A1 - Pavio, Anthony M. A1 - Rohde, Ulrich L. A1 - Rudolph, Matthias T1 - Microwave circuit design:using linear and nonlinear techniques Y1 - 2021 SN - 978-1-118-44975-2 SN - 978-1-119-74169-5 PB - Wiley CY - Hoboken, N.J. ET - Third edition ER - TY - GEN A1 - Kaule, Evelyne A1 - Andrei, Cristina A1 - Gerlich, Stefan A1 - Dörner, Ralf A1 - Rudolph, Matthias T1 - Limiting the Output Power of Rugged GaN LNAs T2 - 14th European Microwave Integrated Circuits Conference (EuMIC) N2 - Rugged GaN HEMT low-noise amplifiers are well established, but the common concept of achieving ruggedness by applying the gate supply voltage through a high ohmic resistance might not be sufficient in addition to control the maximum output power. This paper shifts the focus to the protection of subsequent stages and proposes a circuit concept based on an output attenuator and an adaptive drain supply. It is shown that the concept implementation provides an attenuation of up to 28dB under input overdrive condition while leaving small-signal noise Figure unaffected. KW - Power generation; Logic Gates; Gallium nitride; Attenuators; HEMTs; Printed circuits; Power measurement; Limit; GaN; HEMT; ruggedness; low noise amplifier (LNA); receiver Y1 - 2019 SN - 978-2-87487-056-9 SN - 978-1-7281-0768-4 U6 - https://doi.org/10.23919/EuMIC.2019.8909653 SP - 240 EP - 242 CY - Paris, France ER - TY - GEN A1 - Kaule, Evelyne A1 - Andrei, Cristina A1 - Gerlich, Stefan A1 - Dörner, Ralf A1 - Rudolph, Matthias T1 - Limiting the Output Power of Rugged GaN LNAs T2 - Proceedings of 49th European Microwave Conference (EuMC) N2 - Rugged GaN HEMT low-noise amplifiers are well established, but the common concept of achieving ruggedness by applying the gate supply voltage through a high ohmic resistance might not be sufficient in addition to control the maximum output power. This paper shifts the focus to the protection of subsequent stages and proposes a circuit concept based on an output attenuator and an adaptive drain supply. It is shown that the concept implementation provides an attenuation of up to 28 dB under input overdrive condition while leaving small-signal noise figure unaffected. KW - Power generation; Logic Gates; Gallium nitride; Attenuators; HEMTs; Printed circuits; Power measurement; Limit; GaN; HEMT; ruggedness; low noise amplifier (LNA); receiver Y1 - 2019 SN - 978-2-87487-055-2 SN - 978-1-7281-1798-0 U6 - https://doi.org/10.23919/EuMC.2019.8910675 SP - 794 EP - 796 CY - Paris, France ER - TY - JOUR A1 - Rudolph, Matthias A1 - Behtash, Reza A1 - Hirche, Klaus A1 - Würfl, Joachim A1 - Heinrich, Wolfgang A1 - Tränkle, Günther T1 - A Highly Survivable 3-7 GHz GaN Low-Noise Amplifier Y1 - 2006 ER - TY - GEN A1 - Rudolph, Matthias A1 - Achouche, M. A1 - Kraus, S. A1 - Spitzbart, Th. A1 - Kurpas, Paul A1 - Rentner, D. A1 - Brunner, F. A1 - Richter, E. A1 - Bergunde, T. A1 - Heymann, Peter A1 - Wolter, P. A1 - Wittrich, H. A1 - Weyers, M. A1 - Würfl, Joachim A1 - Tränkle, Günther T1 - InGaP/GaAs Power HBTs for L-Band Applications Y1 - 1999 ER - TY - GEN A1 - Rudolph, Matthias A1 - Meliani, Chafik A1 - Kurpas, Paul A1 - Schmidt, L. A1 - Rheinfelder, C. N. A1 - Heinrich, Wolfgang T1 - A 2.4 GHz GaAs-HBT Class-E MMIC Amplifier with 65% PAE Y1 - 2007 ER - TY - GEN A1 - Rudolph, Matthias A1 - Würfl, Joachim A1 - Kurpas, Paul A1 - Brunner, F. A1 - Mai, M. T1 - Degradation properties of MOVPE-grown GaInP/GaAs HBTs under combined temperatureand current stressing Y1 - 2001 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Beilenhoff, K. A1 - Dörner, Ralf A1 - Heymann, Peter T1 - Scalable GaInP/GaAs HBT Large-Signal Model Y1 - 2000 ER - TY - JOUR A1 - Rudolph, Matthias T1 - Limitations of Current Compact Transit-Time Models for III-V-Based HBTs Y1 - 2008 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Heymann, Peter T1 - On Compact HBT RF Noise Modeling Y1 - 2007 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Meliani, Chafik A1 - Heinrich, Wolfgang T1 - A 40 Gbps GaAs-HBT Distributed Amplifier with an Over-fT Cut-Off Frequency: Analyticaland Experimental Study Y1 - 2005 ER -