TY - GEN A1 - Liero, Armin A1 - Dewitz, Mike A1 - Kühn, Silvio A1 - Chaturvedi, Nidhi A1 - Xu, Jijun A1 - Rudolph, Matthias T1 - On the Recovery Time of Highly Robust Low-Noise Amplifiers T2 - IEEE transactions on microwave theory and techniques KW - Amplifier noise KW - integrated circuit noise KW - microwave field-effect transistor (FET) amplifiers KW - monolithic microwave integrated circuit (MMIC) amplifiers KW - noise KW - semiconductor device noise KW - integrated circuit (MMIC) amplifiers Y1 - 2010 U6 - https://doi.org/10.1109/TMTT.2010.2041519 SN - 0018-9480 VL - 58 IS - 4 SP - 781 EP - 787 ER - TY - CHAP A1 - Rudolph, Matthias A1 - Andrei, Cristina A1 - Liero, Armin A1 - Lossy, Richard A1 - Heinrich, Wolfgang T1 - Highly Linear Broadband GaN-based Low-noise Amplifier Y1 - 2010 ER - TY - CHAP A1 - Rudolph, Matthias A1 - Flucke, Jens A1 - Schnieder, Frank A1 - Schmückle, Franz-Josef A1 - Heinrich, Wolfgang T1 - On the magnetic coupling between bondwires in power-transistor packages Y1 - 2010 ER - TY - CHAP A1 - Rudolph, Matthias T1 - Modeling GaN Power Transistors Y1 - 2010 U6 - https://doi.org/http://dx.doi.org/10.1109/WAMICON.2010.5461846 ER - TY - CHAP A1 - Rudolph, Matthias T1 - Compact HBT modeling: status and challenges Y1 - 2010 U6 - https://doi.org/10.1109/MWSYM.2010.5517597 ER - TY - CHAP A1 - Rudolph, Matthias A1 - Bengtsson, Olof A1 - Bent, G. van der A1 - Heinigen, M. van A1 - Vliet, F. F. van T1 - GaN-HEMT VSWR Ruggedness and Amplifier Protection Y1 - 2010 ER - TY - CHAP A1 - Rudolph, Matthias A1 - Mostardinha, H. A1 - Cabral, P. M. A1 - Carvalho, N. B. A1 - Kurpas, Paul A1 - Würfl, Joachim A1 - Pinto, J. C. A1 - Barnes, J. A1 - Garat, F. T1 - GaN RF Oscillator Used in Space Applications Y1 - 2010 U6 - https://doi.org/http://dx.doi.org/10.1109/INMMIC.2010.5480142 ER - TY - CHAP A1 - Rudolph, Matthias A1 - Heinrich, Wolfgang T1 - Assessment of power-transistor package models: distributed versus lumped approach Y1 - 2010 ER - TY - GEN A1 - Rudolph, Matthias A1 - Heymann, Peter A1 - Boss, Hermann T1 - Impact of Receiver Bandwidth and Nonlinearity on Noise Measurement Methods Y1 - 2010 U6 - https://doi.org/http://dx.doi.org/10.1109/MMM.2010.937715 ER - TY - CHAP A1 - Rudolph, Matthias T1 - Noise modeling of GaAs HBTs N2 - Institutskolloquium, IHP Frankfurt (Oder), 2010 Y1 - 2010 ER - TY - CHAP A1 - Rudolph, Matthias T1 - Highly Robust GaN-Based Low-noise Amplifiers N2 - Institutskolloquium, TU Darmstadt, Fachgebiet Mikrowellentechnik, Darmstadt, 2010 Y1 - 2010 ER - TY - BOOK A1 - Rudolph, Matthias T1 - Introduction to Modeling HBTs Y1 - 2006 SN - 1-58053-144-X PB - Artech House CY - Boston, Mass. ER - TY - GEN A1 - Rudolph, Matthias A1 - Dörner, Ralf T1 - Selected Topics on Microwave Measurements, Noise in Devices and Circuits, and TransistorModeling. A Festschrift for Peter Heymann Y1 - 2005 SN - 3-86537-328-3 ER - TY - BOOK A1 - Rudolph, Matthias T1 - Selected Topics on Microwave Measurements, Noise in Devices and Großsignalmodell für GaAs Hetero-Bipolar-Transistoren fürLeistungsanwendungen in der Mobilkommunikation Y1 - 2002 SN - 3-89825-392-9 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Dörner, Ralf A1 - Heymann, Peter T1 - Direct Extraction of HBT Equivalent Circuit Elements Y1 - 1999 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Rheinfelder, C. N. A1 - Beißwanger, F. A1 - Heinrich, Wolfgang T1 - Nonlinear Modeling of SiGe HBTs up to 50 GHz Y1 - 1997 ER - TY - GEN A1 - Rudolph, Matthias A1 - Achouche, M. A1 - Kraus, S. A1 - Spitzbart, Th. A1 - Kurpas, Paul A1 - Rentner, D. A1 - Brunner, F. A1 - Richter, E. A1 - Bergunde, T. A1 - Heymann, Peter A1 - Wolter, P. A1 - Wittrich, H. A1 - Weyers, M. A1 - Würfl, Joachim A1 - Tränkle, Günther T1 - InGaP/GaAs Power HBTs for L-Band Applications Y1 - 1999 ER - TY - CHAP A1 - Rudolph, Matthias A1 - Lenk, Friedrich A1 - Dörner, Ralf A1 - Heymann, Peter T1 - Influence of 2 GHz Harmonic Load-Pull on HBT and MESFET Output Power and Efficiency T2 - 1999 IEEE MTT-S International Microwave Symposium digest, June 13 - 19, 1999, Anaheim Convention Center, Anaheim, California Y1 - 1999 SN - 0-7803-5135-5 SP - 741 EP - 744 PB - Piscataway, NJ CY - IEEE ER - TY - JOUR A1 - Rudolph, Matthias A1 - Dörner, Ralf A1 - Heymann, Peter T1 - On the Gunn Effect in GaAs HBTs Y1 - 2001 ER - TY - CHAP A1 - Rudolph, Matthias A1 - Dörner, Ralf A1 - Heymann, Peter A1 - Lenk, Friedrich T1 - Modeling of Low-Frequency Noise in GaInP/GaAs Hetero-Bipolar-Transistors T2 - 2001 IEEE MTT-S International Microwave Symposium digest, May 20 - 25, 2001, Phoenix Civic Plaza, Phoenix, AZ, 1967 - 1970, Vol.3 Y1 - 2001 SN - 0-7803-6538-0 SP - 1967 EP - 1970 PB - IEEE Service Center CY - Piscataway, NJ ER -