TY - CHAP A1 - Luo, Peng A1 - Bengtsson, Olof A1 - Rudolph, Matthias T1 - Novel Approach to Trapping Effect Modeling based on Chalmers Model and Pulsed S-Parameter Measurements T2 - 2016 11th European Microwave Integrated Circuits Conference : 3-4 October 2016, London, UK Y1 - 2016 SN - 978-2-87487-044-6 SN - 978-1-4673-9009-5 U6 - https://doi.org/10.1109/EuMIC.2016.7777514 SP - 157 EP - 160 PB - IEEE CY - Piscataway, NJ ER - TY - CHAP A1 - Rudolph, Matthias T1 - GaN HEMTs for low-noise amplification — status and challenges T2 - Integrated Nonlinear Microwave and Millimetre-wave Circuits Workshop (INMMiC), 20-21 April 2017, Graz, Austria Y1 - 2017 SN - 978-1-5090-5862-4 U6 - https://doi.org/10.1109/INMMIC.2017.7927327 PB - IEEE CY - Piscataway, NJ ER - TY - GEN A1 - Apte, Anisha M. A1 - Rohde, Ulrich L. A1 - Poddar, Ajay K. A1 - Rudolph, Matthias T1 - Optimizing Phase-Noise Performance: Theory and Design Techniques for a Crystal Oscillator T2 - IEEE Microwave Magazine Y1 - 2017 U6 - https://doi.org/10.1109/MMM.2017.2679998 SN - 1527-3342 VL - 18 IS - 4 SP - 108 EP - 123 ER - TY - CHAP A1 - Rudolph, Matthias A1 - Andrei, Cristina A1 - Dörner, Ralf A1 - Chevtchenko, Serguei A. A1 - Heinrich, Wolfgang T1 - Noise in GaN HEMTs and Circuits T2 - 24th International Conference on Noise and Fluctuations (ICNF), Vilnius, Lithuania, June 20-23, 2017 Y1 - 2017 SN - 978-1-5090-2760-6 U6 - https://doi.org/10.1109/ICNF.2017.7985978 SP - 1 EP - 4 PB - IEEE CY - Piscataway, NJ ER - TY - CHAP A1 - Bonani, Fabrizio A1 - Rudolph, Matthias T1 - Simulating Noise in Nonlinear Circuits T2 - IEEE MTT-S International Microwave Symposium (IMS), 4-9 June 2017, Honololu, HI, USA, Workshop WSP: Recent Advances in Microwave Noise: from Device Modeling to Network Design and Characterization Y1 - 2017 UR - https://ims2017.org/technical-programs/filter/search/rudolph ER - TY - CHAP A1 - Luo, Peng A1 - Bengtsson, Olof A1 - Rudolph, Matthias T1 - A Drain Lag Model for GaN HEMT based on Chalmers Model and Pulsed S-Parameter Measurements T2 - IEEE MTT-S International Microwave Symposium (IMS), 4-9 June 2017, Honololu, HI, USA Y1 - 2017 SN - 978-1-5090-6360-4 U6 - https://doi.org/10.1109/MWSYM.2017.8059085 SP - 240 EP - 243 PB - IEEE CY - Piscataway, NJ ER - TY - CHAP A1 - Andrei, Cristina A1 - Dörner, Ralf A1 - Chevtchenko, Serguei A. A1 - Heinrich, Wolfgang A1 - Rudolph, Matthias T1 - On the Optimization of GaN HEMT Layout for Highly Rugged Low-Noise Amplifier Design T2 - 12th European Microwave Integrated Circuits Conference (EuMIC), 8-10 Oct. 2017, Nuremberg, Germany Y1 - 2017 SN - 978-2-87487-048-4 U6 - https://doi.org/10.23919/EuMIC.2017.8230705 SP - 244 EP - 247 PB - IEEE CY - Piscataway, NJ ER - TY - CHAP A1 - Kaule, Evelyne A1 - Dörner, Ralf A1 - Weimann, Nils A1 - Rudolph, Matthias T1 - Noise modeling of transferred-substrate InP-DHBTs T2 - IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems (COMCAS), 13-15 Nov. 2017, Tel-Aviv, Israel 2017 Y1 - 2017 SN - 978-1-5386-3169-0 U6 - https://doi.org/10.1109/COMCAS.2017.8244768 SP - 1 EP - 4 PB - IEEE CY - Piscataway, NJ ER - TY - CHAP A1 - Nasser, Caram A1 - Ritter, Dan A1 - Rudolph, Matthias T1 - Bias dependence of the access resistance in GaN HEMTs T2 - 2018 22nd International Microwave and Radar Conference (MIKON), Poznán, May 14-17, 2018, Poland Y1 - 2018 UR - https://ieeexplore.ieee.org/document/8405197 SN - 978-83-949421-1-3 U6 - https://doi.org/10.23919/MIKON.2018.8405197 SP - 271 EP - 273 PB - IEEE CY - Piscataway, NJ ER - TY - CHAP A1 - Luo, Peng A1 - Schnieder, Frank A1 - Rudolph, Matthias T1 - Chalmers GaN HEMT charge model revisited T2 - German Microwave Conference (GeMiC), 12-14 March 2018, Freiburg, Germany Y1 - 2018 SN - 978-3-9812668-8-7 U6 - https://doi.org/10.23919/GEMIC.2018.8335055 SP - 164 EP - 167 PB - IEEE CY - Piscataway, NJ ER - TY - CHAP A1 - Luo, Peng A1 - Schnieder, Frank A1 - Bengtsson, Olof A1 - Heinrich, Wolfgang A1 - Rudolph, Matthias T1 - Modeling the Virtual Gate Voltage in Dispersive GaN HEMTs T2 - IEEE/MTT-S International Microwave Symposium, 10-15 June 2018, Philadelphia, PA, USA Y1 - 2018 SN - 978-1-5386-5067-7 U6 - https://doi.org/10.1109/MWSYM.2018.8439389 SP - 728 EP - 731 PB - IEEE CY - Piscataway, NJ ER - TY - GEN A1 - Kaule, Evelyne A1 - Andrei, Cristina A1 - Gerlich, Stefan A1 - Dörner, Ralf A1 - Rudolph, Matthias T1 - Limiting the Output Power of Rugged GaN LNAs T2 - 14th European Microwave Integrated Circuits Conference (EuMIC) N2 - Rugged GaN HEMT low-noise amplifiers are well established, but the common concept of achieving ruggedness by applying the gate supply voltage through a high ohmic resistance might not be sufficient in addition to control the maximum output power. This paper shifts the focus to the protection of subsequent stages and proposes a circuit concept based on an output attenuator and an adaptive drain supply. It is shown that the concept implementation provides an attenuation of up to 28dB under input overdrive condition while leaving small-signal noise Figure unaffected. KW - Power generation; Logic Gates; Gallium nitride; Attenuators; HEMTs; Printed circuits; Power measurement; Limit; GaN; HEMT; ruggedness; low noise amplifier (LNA); receiver Y1 - 2019 SN - 978-2-87487-056-9 SN - 978-1-7281-0768-4 U6 - https://doi.org/10.23919/EuMIC.2019.8909653 SP - 240 EP - 242 CY - Paris, France ER - TY - GEN A1 - Kaule, Evelyne A1 - Andrei, Cristina A1 - Gerlich, Stefan A1 - Dörner, Ralf A1 - Rudolph, Matthias T1 - Limiting the Output Power of Rugged GaN LNAs T2 - Proceedings of 49th European Microwave Conference (EuMC) N2 - Rugged GaN HEMT low-noise amplifiers are well established, but the common concept of achieving ruggedness by applying the gate supply voltage through a high ohmic resistance might not be sufficient in addition to control the maximum output power. This paper shifts the focus to the protection of subsequent stages and proposes a circuit concept based on an output attenuator and an adaptive drain supply. It is shown that the concept implementation provides an attenuation of up to 28 dB under input overdrive condition while leaving small-signal noise figure unaffected. KW - Power generation; Logic Gates; Gallium nitride; Attenuators; HEMTs; Printed circuits; Power measurement; Limit; GaN; HEMT; ruggedness; low noise amplifier (LNA); receiver Y1 - 2019 SN - 978-2-87487-055-2 SN - 978-1-7281-1798-0 U6 - https://doi.org/10.23919/EuMC.2019.8910675 SP - 794 EP - 796 CY - Paris, France ER - TY - GEN A1 - Nasser, Caram A1 - Luo, Peng A1 - Schnieder, Frank A1 - Rudolph, Matthias A1 - Ritter, Dan T1 - Simulation of the RF Power Performance of a GaN HFET and Comparison to Experiment T2 - IEEE Transactions on Electron Devices Y1 - 2019 U6 - https://doi.org/10.1109/TED.2019.2907484 SN - 0018-9383 SN - 1557-9646 VL - 66 IS - 5 SP - 2146 EP - 2150 ER - TY - GEN A1 - Griebel, Wolfgang A1 - Rudolph, Matthias A1 - Rohde, Ulrich L. T1 - Added Noise in Oscillators Caused by the Transistor Base Emitter Breakdown Phenomenon T2 - IETE Journal of Research Y1 - 2020 U6 - https://doi.org/10.1080/03772063.2020.1847702 SN - 0974-780X SP - 1 EP - 11 ER - TY - GEN A1 - Andrei, Cristina A1 - Rudolph, Matthias T1 - Properties of GaN LNAs for Front-End Applications T2 - WFC Towards A One-Chip Solution for GaN Front-Ends, Microwave Symposiums, Boston, 2019 Y1 - 2019 UR - https://www.b-tu.de/en/endowed-chair-rf-and-microwave-techniques/publications/publications#c208430 ER - TY - GEN A1 - Le, Quang Huy A1 - Huynh, Dang Khoa A1 - Wang, Defu A1 - Kämpfe, Thomas A1 - Rudolph, Matthias T1 - Small-Signal Modelling of mm-Wave MOSFET up to 110 GHz in 22nm FDSOI Technology T2 - Proceedings of the 2019 IEEE Asia-Pacific Microwave Conference (APMC) : 10-13 December 2019, Marina Bay Sands, Singapore Y1 - 2019 SN - 978-1-7281-3517-5 U6 - https://doi.org/10.1109/APMC46564.2019.9038620 SP - 222 EP - 224 PB - IEEE CY - Piscataway, NJ ER - TY - GEN A1 - Shivan, T. A1 - Kaule, Evelyne A1 - Hossain, M. A1 - Dörner, Ralf A1 - Johansen, Tom K. A1 - Stoppel, Dimitri A1 - Boppel, S. A1 - Heinrich, Wolfgang A1 - Krozer, Viktor A1 - Rudolph, Matthias T1 - Design and modeling of a ultra-wideband low-noise distributend amplifier in InP DHBT technology T2 - International Journal of Microwave and Wireless Technologies Y1 - 2019 U6 - https://doi.org/10.1017/S1759078719000515 SN - 1759-0795 N1 - MIKON 2018 / EuMW 2018 (Part II) VL - 11 IS - 7 SP - 635 EP - 644 ER - TY - GEN A1 - Luo, Peng A1 - Schnieder, Frank A1 - Bengtsson, Olof A1 - Vadalà, Valeria A1 - Raffo, Antonio A1 - Heinrich, Wolfgang A1 - Rudolph, Matthias T1 - A streamlined drain-lag model for GaN HEMTs based on pulsed S-parameter measurements T2 - International Journal of Microwave and Wireless Technologies Y1 - 2019 U6 - https://doi.org/10.1017/S1759078719000060 SN - 1759-0787 SN - 1759-0795 VL - 11 IS - 2 SP - 121 EP - 129 ER - TY - GEN A1 - Le, Quang Huy A1 - Huynh, Dang Khoa A1 - Wang, D. A1 - Zhao, Zhixing A1 - Lehmann, Steffen A1 - Kämpfe, Thomas A1 - Rudolph, Matthias T1 - W-Band Noise Characterization with Back-Gate Effects for Advanced 22nm FDSOI mm-Wave MOSFETs T2 - 2020 IEEE Radio Frequency Integrated Circuits Symposium (RFIC). 4-6 Aug. 2020, Los Angeles, CA, USA Y1 - 2020 SN - 978-1-7281-6809-8 SN - 978-1-7281-6810-4 U6 - https://doi.org/10.1109/RFIC49505.2020.9218369 SN - 2375-0995 SN - 1529-2517 SP - 131 EP - 134 ER - TY - GEN A1 - Kaule, Evelyne A1 - Dörner, Ralf A1 - Weimann, Nils A1 - Rudolph, Matthias T1 - Modeling the Noise of Transferred-Substrate InP DHBTs at Highest Frequencies T2 - 2020 German Microwave Conference (GeMiC), 09-11 March 2020 , Cottbus Y1 - 2020 UR - https://ieeexplore.ieee.org/document/9080188 SN - 978-3-9820-3971-8 SN - 978-1-7281-4206-7 SN - 2167-8022 SP - 52 EP - 55 ER - TY - GEN A1 - Huynh, Dang Khoa A1 - Le, Quang Huy A1 - Duhan, Pardeep A1 - Wang, Defu A1 - Kämpfe, Thomas A1 - Rudolph, Matthias T1 - Analysis of Hot-Carrier Degradation in 22nm FDSOI Transistors Using RF Small-Signal Characteristics T2 - 2020 German Microwave Conference (GeMiC), 09-11 March 2020, Cottbus, Germany Y1 - 2020 UR - https://ieeexplore.ieee.org/abstract/document/9080227 SN - 978-3-9820-3971-8 SN - 978-1-7281-4206-7 SN - 2167-8022 SP - 244 EP - 247 PB - IEEE CY - Piscataway ER - TY - GEN A1 - Erkelenz, Kevin A1 - Sriperumbuduri, Venkata Pawan A1 - Flisgen, Thomas A1 - Rudolph, Matthias A1 - Johansen, Tom K. A1 - Heinrich, Wolfgang A1 - Wentzel, Andreas T1 - Output Matching Network Design for Highly Efficient InP-DHBT W-Band PAs Utilizing a Defected Ground Structure T2 - 2020 German Microwave Conference (GeMiC), 09-11 March 2020, Cottbus, Germany Y1 - 2020 UR - https://ieeexplore.ieee.org/document/9080208 SN - 978-3-9820-3971-8 SN - 978-1-7281-4206-7 N1 - INSPEC Accession Number: 19575344 SP - 268 EP - 271 PB - IEEE ER - TY - GEN A1 - Krause, Sascha A1 - Beleniotis, Petros A1 - Bengtsson, Olof A1 - Rudolph, Matthias A1 - Heinrich, Wolfgang T1 - Characterization of the Impairment and Recovery of GaN-HEMTs in Low-Noise Amplifiers under Input Overdrive T2 - 2021 IEEE MTT-S International Microwave Symposium (IMS), 07-25 June 2021, Atlanta, GA, USA Y1 - 2021 SN - 978-1-6654-0307-8 SN - 978-1-6654-3141-5 U6 - https://doi.org/10.1109/IMS19712.2021.9574839 SN - 2576-7216 SN - 0149-645X SP - 515 EP - 518 ER - TY - GEN A1 - Le, Quang Huy A1 - Huynh, Dang Khoa A1 - Lehmann, Steffen A1 - Zhao, Zhixing A1 - Kämpfe, Thomas A1 - Rudolph, Matthias T1 - Empirical Large-Signal Medoling of mm-Wave FDSOI CMOS Based on Angelov Model T2 - IEEE Transactions on Electron Devices Y1 - 2021 U6 - https://doi.org/10.1109/TED.2021.3061318 SN - 1557-9646 SN - 0018-9383 VL - 68 IS - 4 SP - 1446 EP - 1453 ER - TY - BOOK A1 - Vendelin, George D. A1 - Pavio, Anthony M. A1 - Rohde, Ulrich L. A1 - Rudolph, Matthias T1 - Microwave circuit design:using linear and nonlinear techniques Y1 - 2021 SN - 978-1-118-44975-2 SN - 978-1-119-74169-5 PB - Wiley CY - Hoboken, N.J. ET - Third edition ER - TY - GEN A1 - Beleniotis, Petros A1 - Schnieder, Frank A1 - Rudolph, Matthias T1 - Simulating Drain Lag of GaN HEMTs with physics-based ASM Model T2 - 2020 15th European Microwave Integrated Circuits Conference (EuMIC), 10-15 January 2021, Utrecht, Netherlands Y1 - 2021 UR - https://ieeexplore.ieee.org/document/9337389 SN - 978-2-87487-060-6 SN - 978-1-7281-7040-4 SP - 165 EP - 168 ER - TY - BOOK A1 - Heymann, Peter A1 - Rudolph, Matthias T1 - A Guido to Noise in Microwave Circuits: Devices, Circuits and Measurement Y1 - 2021 SN - 978-1-119-85936-9 PB - IEEE Press [u.a.] CY - Piscataway, NJ ER - TY - GEN A1 - Krause, Sascha A1 - Michler, Fabian A1 - Kölpin, Alexander A1 - Rudolph, Matthias A1 - Heinrich, Wolfgang T1 - A Digital Correction Method for Increased Dynamic Range in Interferometric Six-Port Radars T2 - IEEE Microwave and Wireless Components Letters Y1 - 2021 U6 - https://doi.org/10.1109/LMWC.2021.3084338 SN - 1558-1764 SN - 1531-1309 VL - 31 IS - 8 SP - 997 EP - 1000 ER - TY - GEN A1 - Rudolph, Matthias A1 - Apte, Anisha M. T1 - Nonlinear Noise Modeling: Using Nonlinear Circuit Simulators to Simulate Noise in the Nonlinear Domain T2 - IEEE Microwave Magazine Y1 - 2021 U6 - https://doi.org/10.1109/MMM.2021.3069538 SN - 1557-9581 VL - 22 IS - 7 SP - 47 EP - 64 ER - TY - GEN A1 - Sriperumbuduri, Venkata Pawan A1 - Yacoub, Hady A1 - Johansen, Tom K. A1 - Wentzel, Andreas A1 - Dörner, Ralf A1 - Rudolph, Matthias T1 - Modeling Base-Collector Heterojunction Barrier Effect in InP DHBTs for Improved Large Singal Performance T2 - 2021 IEEE/MTT-S International Microwave Symposium : June 2021, Atlanta, Georgia, USA/20-25 June 2021, virtual event Y1 - 2021 SN - 978-1-66540-307-8 SN - 978-1-66543-141-5 U6 - https://doi.org/10.1109/IMS19712.2021.9575019 SP - 355 EP - 357 PB - IEEE CY - Piscataway ER - TY - GEN A1 - Shrestha, Amit A1 - Dörner, Ralf A1 - Yacoub, Hady A1 - Johansen, Tom K. A1 - Heinrich, Wolfgang A1 - Krozer, Viktor A1 - Rudolph, Matthias A1 - Wentzel, Andreas T1 - A 100 GHz Class-F-Like InP-DHBT PA with 25,4%PAE T2 - 16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, United Kingdom Y1 - 2022 SN - 978-2-87487-064-4 SN - 978-1-6654-4722-5 U6 - https://doi.org/10.23919/EuMIC50153.2022.9783638 SP - 225 EP - 228 ER - TY - GEN A1 - Le, Quang Huy A1 - Huynh, Dang Khoa A1 - Lehmann, Steffen A1 - Zhao, Zhixing A1 - Kämpfe, Thomas A1 - Rudolph, Matthias T1 - Analysis of the Relaxed Contacted-Poly-Pitch Effect on the RF Performance of Strained-SiGe-Channel p-FETs in 22 nm FDSOI Technology T2 - 16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, United Kingdom Y1 - 2022 SN - 978-2-87487-064-4 SN - 978-1-6654-4722-5 U6 - https://doi.org/10.23919/EuMIC50153.2022.9783713 SP - 22 EP - 25 PB - IEEE ER - TY - GEN A1 - Kaule, Evelyne A1 - Andrei, Cristina A1 - Rudolph, Matthias T1 - Output Power Limited Rugged GaN LNA MMIC T2 - 16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, United Kingdom Y1 - 2022 SN - 978-2-87487-064-4 SN - 978-1-6654-4722-5 U6 - https://doi.org/10.23919/EUMIC50153.2022.9784020 SP - 133 EP - 135 ER - TY - GEN A1 - Huynh, Dang Khoa A1 - Le, Quang Huy A1 - Lehmann, Steffen A1 - Zhao, Zhixing A1 - Bossu, Germain A1 - Arfaoui, Wafa A1 - Wang, Defu A1 - Kämpfe, Thomas A1 - Rudolph, Matthias T1 - Analysis of RF Stress Influence on Large-Signal Performance of 22nm FDSOI CMOS Transistors utilizing Waveform Measurement T2 - 16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, United Kingdom Y1 - 2022 SN - 978-2-87487-064-4 SN - 978-1-6654-4722-5 U6 - https://doi.org/10.23919/EuMIC50153.2022.9783930 SP - 382 EP - 385 ER - TY - GEN A1 - Haque, Sanaul A1 - Schnieder, Frank A1 - Hilt, Oliver A1 - Dörner, Ralf A1 - Brunner, Frank A1 - Rudolph, Matthias T1 - Noise Medeling of GaN/AIN HEMT T2 - 16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, United Kingdom Y1 - 2022 SN - 978-2-87487-064-4 SN - 978-1-6654-4722-5 U6 - https://doi.org/10.23919/EuMIC50153.2022.9783992 SP - 185 EP - 188 ER - TY - GEN A1 - Beleniotis, Petros A1 - Chevtchenko, Serguei A. A1 - Rudolph, Matthias T1 - Statistical Medeling of GaN HEMTs by Direct Transfer of Veriations to Model Parameters T2 - 16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, United Kingdom Y1 - 2022 SN - 978-2-87487-064-4 SN - 978-1-6654-4722-5 U6 - https://doi.org/10.23919/EuMIC50153.2022.9783780 SP - 63 EP - 66 ER - TY - GEN A1 - Le, Quang Huy A1 - Huynh, Dang Khoa A1 - Nayak, Anurag A1 - Lehmann, Steffen A1 - Zhao, Zhixing A1 - Kämpfe, Thomas A1 - Rudolph, Matthias T1 - Large-Signal Medeling for Nonlinear Analysis of Experimental Devices in 22nm FDSOI Technology T2 - 16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, UK Y1 - 2022 SN - 978-2-87487-064-4 SN - 978-1-6654-4722-5 U6 - https://doi.org/10.23919/EuMIC50153.2022.9784055 SP - 17 EP - 20 ER - TY - GEN A1 - Tomaz, Antonio A1 - Gerlich, Stefan A1 - Rudolph, Matthias A1 - Andrei, Cristina T1 - A Novel System for Recovery Time Measurements of GaN-Based Low-Noise Amplifiers T2 - 2022 14th German Microwave Conference (GeMiC), Ulm, 16-18 May 2022 N2 - A novel setup allowing for recovery time measurement of robust GaN LNA is presented in this paper. The setup is based on an PNA-X vector network analyzer and allows for the characterization of the LNA's small-signal gain, while it also monitors overdrive pulse power and reflected pulse power. The system setup and operation is shown in detail. As an example, two different GaN LNAs were measured in order to validate the test setup. Y1 - 2022 UR - https://ieeexplore.ieee.org/document/9783536 SN - 978-3-9820397-2-5 SN - 2167-8022 SP - 65 EP - 68 PB - IEEE ER - TY - GEN A1 - Krause, Sascha A1 - Zervos, Christos A1 - Beleniotis, Petros A1 - Ritter, Dan A1 - Rudolph, Matthias A1 - Heinrich, Wolfgang T1 - On the Influence of Transistor Dimensions on the Dispersive Behavior in A1GaN/GaN HEMT-Based PAs and Robust LNAs T2 - IEEE/MTT-S International Microwave Symposium - IMS 2022, 19-24 June 2022 Denver, CO, USA Y1 - 2022 SN - 978-1-6654-9613-1 SN - 978-1-6654-9614-8 U6 - https://doi.org/10.1109/IMS37962.2022.9865474 SP - 914 EP - 917 PB - IEEE CY - Piscataway ER - TY - GEN A1 - Beleniotis, Petros A1 - Schnieder, Frank A1 - Krause, Sascha A1 - Haque, Sanaul A1 - Rudolph, Matthias T1 - An efficient drain-lag model for microwave GaN HEMTs based on ASM-HEMT T2 - International Journal of Microwave and Wireless Technologie Y1 - 2022 U6 - https://doi.org/10.1017/S1759078721001483 SN - 1759-0795 VL - 14 IS - 2 SP - 134 EP - 142 ER - TY - GEN A1 - Zervos, Christos A1 - Beleniotis, Petros A1 - Rudolph, Matthias T1 - Prediction of the large-signal GaN HEMT performance using accurate TCAD-compact modeling method T2 - 2024 19th European Microwave Integrated Circuits Conference (EuMIC) Y1 - 2024 U6 - https://doi.org/10.23919/EuMIC61603.2024.10732230 SP - 186 EP - 189 PB - IEEE ER - TY - GEN A1 - Rao, Megha Krishnaji A1 - Wentzel, Andreas A1 - Hoffmann, Thomas A1 - Schellhase, Lars A1 - Chevtchenko, Serguei A. A1 - Rudolph, Matthias T1 - Digital GaN-based transceiver module for future green 5G networks T2 - 2024 54th European Microwave Conference (EuMC) Y1 - 2024 U6 - https://doi.org/10.23919/EuMC61614.2024.10732423 SP - 136 EP - 139 PB - IEEE ER - TY - GEN A1 - Manchanda, Prabhav A1 - Andrei, Cristina A1 - Tost, Frank A1 - Rudolph, Matthias T1 - A pHEMT based power detector for radar applications T2 - 2024 54th European Microwave Conference (EuMC) Y1 - 2024 U6 - https://doi.org/10.23919/EuMC61614.2024.10732043 SP - 992 EP - 995 PB - IEEE ER - TY - GEN A1 - Haque, Sanaul A1 - Andrei, Cristina A1 - Wolf, Mihaela A1 - Hilt, Oliver A1 - Rudolph, Matthias T1 - Switch integrated Ka-Band low noise amplifier in GaN/AlN HEMT technology T2 - 2024 19th European Microwave Integrated Circuits Conference (EuMIC) Y1 - 2024 U6 - https://doi.org/10.23919/EuMIC61603.2024.10732731 SP - 351 EP - 354 PB - IEEE ER - TY - GEN A1 - Zervos, Christos A1 - Beleniotis, Petros A1 - Rudolph, Matthias T1 - A computational analysis of the impact of thin undoped channels in surface-related current collapse of AlGaN/GaN HEMTs T2 - Semiconductor Science and Technology N2 - Abstract This study provides an insight into the impact of thin purely undoped GaN channel thickness (t ch) on surface-related trapping effects in AlGaN/GaN high electron mobility transistors. Our TCAD study suggests that in cases where parasitic gate leakage is the driving trapping mechanism that promotes the injection of electrons from the Schottky gate contact into surface states, this effect can be alleviated by reducing t ch of the undoped GaN channel. We show that by decreasing t ch from 130 to 10 nm, devices exhibit a reduction in gate-related current collapse under the specific class-B RF operating bias conditions as a consequence of a substantial decrease in the off-state gate leakage with reducing t ch. Large-signal simulations revealed an increase by 3 W mm−1 and about 12% output power and power-added efficiency due to the decrease of gate-related collapse. This work, for the first time, highlights the role of a proper purely undoped GaN t ch selection to alleviate gate-related surface trapping in the design of GaN-based microwave power amplifiers. Y1 - 2024 U6 - https://doi.org/10.1088/1361-6641/ad689c SN - 0268-1242 VL - 39 IS - 9 SP - 1 EP - 8 PB - IOP Publishing ER - TY - GEN A1 - Beleniotis, Petros A1 - Krause, Sascha A1 - Zervos, Christos A1 - Rudolph, Matthias T1 - A Physics-Based Model for Slow Gate-Induced Electron Trapping in GaN HEMTs T2 - IEEE Transactions on Electron Devices Y1 - 2024 U6 - https://doi.org/10.1109/TED.2024.3397234 SN - 0018-9383 VL - 71 IS - 7 SP - 4058 EP - 4065 PB - Institute of Electrical and Electronics Engineers (IEEE) ER - TY - GEN A1 - Beleniotis, Petros A1 - Zervos, Christos A1 - Krause, Sascha A1 - Chevtchenko, Serguei A1 - Ritter, Dan A1 - Rudolph, Matthias T1 - Investigation of traps impact on PAE and linearity of AlGaN/GaN HEMTs relying on a combined TCAD–compact model approach T2 - IEEE Transactions on Electron Devices Y1 - 2024 U6 - https://doi.org/10.1109/TED.2024.3388386 SN - 0018-9383 VL - 71 (2024) IS - 6 SP - 3582 EP - 3589 PB - Institute of Electrical and Electronics Engineers (IEEE) ER - TY - GEN A1 - Yazdani, Hossein A1 - Zervos, Christos A1 - Beleniotis, Petros A1 - Brusaterra, Enrico A1 - Hilt, Oliver A1 - Rudolph, Matthias A1 - Würfl, Joachim T1 - Importance of Scaling in RF GaN HEMTs for Reduction of Surface Traps‐Induced Drain Lag T2 - Physica Status Solidi (a) N2 - Drain lag is a well‐known phenomenon that leads to radio frequency performance degradation in AlGaN/GaN high‐electron‐mobility transistors. Herein, it is demonstrated that a reduction of the gate‐to‐drain distance (Lgd) from 2.0 to 0.5 μm results in 7% reduction in the current collapse. This improvement is attributed to a decrease in surface trapping, which, in this case, is found to have a greater impact on current collapse than relatively slow traps in the buffer layer. To support this argument, TCAD simulations are conducted. Load‐pull analysis confirms that scaling the devices to Lgd = 0.5 μm provides 15% better output power density at 10 GHz than Lgd = 2.0 μm. Additionally, a new passivation layer for reduced surface traps exhibits a 20 to 30% higher output power density and at least a 10% improvement in power‐added efficiency at 20 GHz on a nominally identical GaN‐on‐semi‐insulating SiC epi‐wafer. Y1 - 2024 U6 - https://doi.org/10.1002/pssa.202300885 SN - 1862-6300 SP - 1 EP - 8 PB - Wiley ER - TY - GEN A1 - Rudolph, Matthias A1 - Beleniotis, Petros A1 - Zervos, Christos A1 - Rohde, Ulrich L. A1 - Andrei, Cristina T1 - Determining GaN HEMT trap models from MHz load-line measurement : a case study T2 - 2024 15th German Microwave Conference (GeMiC) Y1 - 2024 U6 - https://doi.org/10.23919/GeMiC59120.2024.10485297 SP - 29 EP - 32 PB - IEEE ER - TY - GEN A1 - Kaule, Evelyne A1 - Luo, Peng A1 - Chevtchenko, Serguei A. A1 - Andrei, Cristina A1 - Rudolph, Matthias T1 - Analysis for the optimization of a rugged GaN low-noise amplifier MMIC with a compact stacked first amplifier stage T2 - 2024 IEEE International Conference on Microwaves, Communications, Antennas, Biomedical Engineering and Electronic Systems (COMCAS) Y1 - 2024 U6 - https://doi.org/10.1109/COMCAS58210.2024.10666226 SP - 1 EP - 4 PB - IEEE ER - TY - GEN A1 - Haque, Sanaul A1 - Beleniotis, Petros A1 - Yazdani, Hossein A1 - Rudolph, Matthias T1 - Ka-Band GaN power amplifier with integrated DC supply switch and RF switch T2 - 2024 25th International Microwave and Radar Conference (MIKON) Y1 - 2024 U6 - https://doi.org/10.23919/MIKON60251.2024.10633971 SP - 1 EP - 5 PB - IEEE ER - TY - CHAP A1 - Naumann, Matthias A1 - Rudolph, David T1 - Ländliche Utopien als infrastrukturelle Utopien : Progressive Alternativen zu infrastruktureller Peripherisierung und infrastrukturellem Populismus. T2 - Ländliche Utopien : Herausforderungen und Alternativen regionaler Entwicklungen. Y1 - 2024 SN - 978-3-8394-7233-0 U6 - https://doi.org/10.1515/9783839472330 SP - 115 EP - 126 PB - Transcript Verlag CY - Bielefeld ER - TY - GEN A1 - Kaule, Evelyne A1 - Yazdani, Hossein A1 - Rudolph, Matthias T1 - Highly Linear Concurrent Tri-Band GaN LNA MMIC for 0.8/1.8/3.6 GHz Applications T2 - 24th International Microwave and Radar Conference (MIKON) Y1 - 2022 SN - 978-83-956020-3-0 SN - 978-1-6654-1106-6 U6 - https://doi.org/10.23919/Mikon54314.2022.9924770 ER - TY - GEN A1 - Manchanda, Prabhav A1 - Okocha, Jonathan A1 - Rudolph, Matthias T1 - Improved Sensitivity of Zero Bias Diode Power Detectors using Impedance Tuners T2 - IEEE Microwaves, Antennas, and Propagation Conference (MAPCON) Y1 - 2022 SN - 978-1-6654-5203-8 SN - 978-1-6654-5204-5 U6 - https://doi.org/10.1109/MAPCON56011.2022.10047233 SP - 1261 EP - 1266 ER - TY - GEN A1 - Rao, Megha Krishnaji A1 - Dörner, Ralf A1 - Yazdani, Hossein A1 - Rudolph, Matthias T1 - GaN-HEMT Based Common-Gate LNA MMIC with Integrated Switch for Compact 5G Transceivers T2 - IEEE Microwaves, Antennas, and Propagation Conference (MAPCON) Y1 - 2022 SN - 978-1-6654-5203-8 SN - 978-1-6654-5204-5 U6 - https://doi.org/10.1109/MAPCON56011.2022.10047410 SP - 1104 EP - 1107 ER - TY - GEN A1 - Sriperumbuduri, Venkata Pawan A1 - Wenzel, Andreas A1 - Rudolph, Matthias T1 - Mathematical Analysis of Switching HBT Devices T2 - IEEE Microwaves, Antennas, and Propagation Conference (MAPCON), 12-16 December 2022, Bangalore, India Y1 - 2022 SN - 978-1-6654-5203-8 SN - 978-1-6654-5204-5 U6 - https://doi.org/10.1109/MAPCON56011.2022.10047449 SP - 827 EP - 831 ER - TY - GEN A1 - Beleniotis, Petros A1 - Schnieder, Frank A1 - Chevtchenko, Serguei A. A1 - Rudolph, Matthias T1 - Localization of Trapping Effects in GaN HEMTs with Pulsed S-parameters and Compact Models T2 - 17th European Microwave Integrated Circuits Conference (EuMIC) Y1 - 2022 SN - 978-2-87487-070-5 SN - 978-1-6654-5880-1 U6 - https://doi.org/10.23919/EuMIC54520.2022.9923511 SP - 149 EP - 152 ER - TY - GEN A1 - Huynh, Dang Khoa A1 - Le, Quang Huy A1 - Lehmann, Steffen A1 - Zhao, Zhixing A1 - Bossu, Germain A1 - Arfaoui, Wafa A1 - Kämpfe, Thomas A1 - Rudolph, Matthias T1 - Impact of Off-State Stress on SiGe-channel p-FETs in 22nm FDSOI under Large-Signal Operation T2 - 18th European Microwave Integrated Circuits Conference (EuMIC), 18-19 September 2023, Berlin Y1 - 2023 SN - 978-2-87487-073-6 SN - 979-8-3503-4833-0 U6 - https://doi.org/10.23919/EuMIC58042.2023.10288886 SP - 173 EP - 176 ER - TY - GEN A1 - Zervos, Christos A1 - Beleniotis, Petros A1 - Krause, Sascha A1 - Ritter, Dan A1 - Rudolph, Matthias T1 - The role of gate leakage on surface-related current collapse in AlGaN/GaN HEMTs T2 - 18th European Microwave Integrated Circuits Conference (EuMIC), 18-19 September 2023, Berlin Y1 - 2023 SN - 978-2-87487-073-6 SN - 979-8-3503-4833-0 U6 - https://doi.org/10.23919/EuMIC58042.2023.10289036 VL - 2023 SP - 297 EP - 300 ER - TY - GEN A1 - Sriperumbuduri, Venkata Pawan A1 - Yacoub, Hady A1 - Wentzel, Andreas A1 - Johansen, Tom K. A1 - Rudolph, Matthias T1 - Design and Analysis of a 50GHz InP DHBT Class-E Power Amplifer Providing 2.3 T2 - 18th European Microwave Integrated Circuits Conference (EuMIC), 18-19 September 2023, Berlin Y1 - 2023 U6 - https://doi.org/10.23919/EuMIC58042.2023.10288688 ER - TY - GEN A1 - Haque, Sanaul A1 - Andrei, Cristina A1 - Yazdani, Hossein A1 - Rudolph, Matthias T1 - On the Survivability of a 28 - 32 GHz GaN Low Noise Amplifier T2 - 18th European Microwave Integrated Circuits Conference (EuMIC), 18-19 September 2023, Berlin Y1 - 2023 SN - 978-2-87487-073-6 SN - 979-8-3503-4833-0 U6 - https://doi.org/10.23919/EuMIC58042.2023.10288728 ER - TY - GEN A1 - Kaule, Evelyne A1 - Luo, Peng A1 - Chevtchenko, Serguei A. A1 - Rudolph, Matthias A1 - Andrei, Cristina T1 - Compact Stacked Rugged GaN Low-Noise Amplifier MMIC under Input Power Overdrive Condition T2 - 18th European Microwave Integrated Circuits Conference (EuMIC),18-19 September 2023, Berlin Y1 - 2023 SN - 978-2-87487-073-6 SN - 979-8-3503-4833-0 U6 - https://doi.org/10.23919/EuMIC58042.2023.10288650 SP - 9 EP - 12 ER - TY - GEN A1 - Beleniotis, Petros A1 - Zervos, Christos A1 - Schnieder, Frank A1 - Rudolph, Matthias T1 - Dynamic RD Modeling by Exploiting Gate Current Dependency of Virtual Gate Effect T2 - 18th European Microwave Integrated Circuits Conference (EuMIC),18-19 September 2023, Berlin Y1 - 2023 SN - 978-2-87487-073-6 SN - 979-8-3503-4833-0 U6 - https://doi.org/10.23919/EuMIC58042.2023.10288955 SP - 1 EP - 4 ER - TY - GEN A1 - Rao, Megha Krishnaji A1 - Dörner, Ralf A1 - Chevtchenko, Serguei A. A1 - Haque, Sanaul A1 - Rudolph, Matthias T1 - Common-Gate LNA MMIC With Switching Feature Using GaN-HEMT for 5G RF Front-Ende T2 - IEEE Microwave and Wireless Technology Letters Y1 - 2023 U6 - https://doi.org/10.1109/LMWT.2023.3306177 SN - 2771-9588 SN - 2771-957X VL - 33 IS - 10 SP - 1446 EP - 1449 ER - TY - GEN A1 - Le, Quang Huy A1 - Huynh, Dang Khoa A1 - Lehmann, Steffen A1 - Zhao, Zhixing A1 - Schwan, Christoph T. A1 - Kämpfe, Thomas A1 - Rudolph, Matthias T1 - 22-nm FDSOI CMOS Noise Modeling and Anlaysis in mm-Wave Frequency Range T2 - 23rd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 22 February 2023, Las Vegas, NV, USA Y1 - 2023 SN - 978-1-6654-9319-2 SN - 978-1-6654-9320-8 U6 - https://doi.org/10.1109/SiRF56960.2023.10046210 SN - 2474-9761 SP - 31 EP - 33 ER - TY - CHAP A1 - Rudolph, Matthias ED - Hartnagel, Hans L. ED - Quay, Rüdiger ED - Rohde, Ulrich L. ED - Rudolph, Matthias T1 - Wave Propagation on Transmission Lines and Cables T2 - Fundamentals of RF and Microwave Techniques and Technologies Y1 - 2023 SN - 978-3-030-94098-0 U6 - https://doi.org/10.1007/978-3-030-94100-0_2 SP - 55 EP - 142 PB - Springer CY - Cham ER - TY - CHAP A1 - Rudolph, Matthias ED - Hartnagel, Hans L. ED - Quay, Rüdiger ED - Rohde, Ulrich L. ED - Rudolph, Matthias T1 - Properties of Coaxial Cables and Transmission Lines, Directional Couplers and RF Filters T2 - Fundamentals of RF and Microwave Techniques and Technologies Y1 - 2023 SN - 978-3-030-94098-0 U6 - https://doi.org/10.1007/978-3-030-94100-0_4 SP - 197 EP - 333 PB - Springer CY - Cham ER - TY - CHAP A1 - Rudolph, Matthias ED - Hartnagel, Hans L. ED - Quay, Rüdiger ED - Rohde, Ulrich L. ED - Rudolph, Matthias T1 - Interference and Noise T2 - Fundamentals of RF and Microwave Techniques and Technologies Y1 - 2023 SN - 978-3-030-94098-0 U6 - https://doi.org/10.1007/978-3-030-94100-0_8 SP - 747 EP - 791 PB - Springer CY - Cham ER - TY - GEN A1 - Yazdani, Hossein A1 - Beleniotis, Petros A1 - Brunner, Frank A1 - Ostermay, Ina A1 - Würfl, Joachim A1 - Rudolph, Matthias A1 - Heinrich, Wolfgang A1 - Hilt, Oliver T1 - K/Ka-Band-GaN-High-Electron-Mobility Transistors Technology with 700 mS mm-1 Extrinsic Transconductance T2 - Physica Status Solidi Y1 - 2024 U6 - https://doi.org/10.1002/pssa.202400592 ER - TY - GEN A1 - Kared, Trusha A1 - Silaghi, Helga A1 - Rudolph, Matthias A1 - Silaghi, Andrei A1 - Rohde, Ulrich L. T1 - Design of a fixed IF down-conversion double-balanced mixer for UHF band applications T2 - Sensors N2 - This paper presents a new SiGe HBT-based high dynamic range double-balanced down-conversion differential mixer. Operating within the 0.5 GHz to 1.8 GHz range, the suggested mixer is appropriate for a variety of applications, such as cellular base stations, satellite communication (SATCOM), and military radar. The down-conversion mixer is made up of a single-ended to a differential-balanced radiofrequency (RF) stage, a dual feedback linearization for the RF stage, a local oscillator (LO) balun, LO mixing cores, and a fixed intermediate frequency (IF)-tuned circuit connected between two outputs to serve as a load at 145 MHz. Compared to earlier research in the literature, the measured SSB noise figure is approximately 7 dB ± 0.4 dB, and the measured conversion gain is approximately 12 dB ± 1 dB for a full band of operation. The mixer achieves a good return loss of over 8 dB for an RF and LO port in the desired band and a measured return loss of over 18 dB at 145 MHz and IF frequency. Furthermore, the design achieved an RF-to-IF isolation of greater than 35 dB, LO feedthrough, and an LO leakage isolation of better than 50 dB. Lastly, the measured third-order intercept point was found to be +4.7 dBm, and the 1 dB compression point was approximately −8 dBm. These results demonstrate good linearity performance. KW - Military radar KW - Satellite communication (SATCOM) KW - Cellular base stations KW - Mixer KW - Lo balun KW - Impedance matching Y1 - 2025 U6 - https://doi.org/10.3390/s25030608 SN - 1424-8220 VL - 25 IS - 3 SP - 1 EP - 29 PB - MDPI CY - Basel ER - TY - GEN A1 - Haque, Sanaul A1 - Doerner, Ralf A1 - Chevtchenko, Serguei A1 - Rudolph, Matthias T1 - Linearity enhancement of GaN LNA MMIC using RF-based approach of derivative superposition T2 - 2025 20th European Microwave Integrated Circuits Conference (EuMIC) N2 - This work presents a new methodology of implementing the derivative superposition (DS) technique based on third-order intermodulation current cancellation using harmonic-balance simulation. This approach is especially suitable for high-frequency applications due to the loading effect in transistors connected in parallel. To the best of the authors' knowledge, this work demonstrates for the first time the implementation of the DS technique in GaN-based LNA MMIC. As a proof of concept, two single-stage 4.5−5.5 GHz LNA MMICs, with and without DS technique, are designed using FBH 250 nm GaN on SiC process, with a focus on improving linearity without additional power consumption. A two-tone measurement around 5 GHz shows a 6 dB output third-order intercept point (OIP3) improvement, from 38.7 dBm for a conventional LNA to 44.9 dBm for an LNA with DS. This leads to an improvement in the linearity figure of merit (LFOM = OIP3/Pdc) from 6.6 to 28. KW - Derivative superposition KW - GaN HEMT KW - Intermodulation distortion KW - Linearity KW - Low-noise amplifier Y1 - 2025 SN - 978-2-87487-082-8 U6 - https://doi.org/10.23919/EuMIC65284.2025.11234643 SP - 25 EP - 28 PB - IEEE CY - Piscataway, NJ ER - TY - GEN A1 - Beleniotis, Petros A1 - Andrei, Cristina A1 - Zervos, Christos A1 - Rohde, Ulrich L. A1 - Rudolph, Matthias T1 - GaN trap model extraction based on MHz load-line measurements T2 - 2025 IEEE/MTT-S International Microwave Symposium - IMS 2025 N2 - The extraction of model parameters for GaN HEMTs is a challenging task that typically requires a comprehensive series of pulsed measurements to ensure that the resulting model is both accurate and convergence-stable. This study introduces, for the first time, an extraction procedure that utilizes I-V curves generated by MHz load-line measurements, effectively replacing the complex and time-intensive pulsed measurements. A drain-lag model extraction was based on load-line I-V curves and validated along with a pulsed-IV-based model through RF large-signal simulations, demonstrating excellent performance. KW - GaN KW - Compact model KW - Load-line KW - Model parameter extraction Y1 - 2025 SN - 979-8-3315-1409-9 U6 - https://doi.org/10.1109/IMS40360.2025.11104000 SP - 1059 EP - 1062 PB - IEEE CY - Piscataway, NJ ER - TY - GEN A1 - Beleniotis, Petros A1 - Andrei, Cristina A1 - Rohde, Ulrich L. A1 - Rudolph, Matthias T1 - Determining GaN HEMT trap models from MHz load-line measurement — synthesis and evaluation T2 - 2025 16th German Microwave Conference (GeMiC) N2 - The modeling of GaN HEMTs is closely associated with pulsed measurements, which are essential for extracting model parameters related to trapping and thermal effects. However, these characterizations are often hindered by high costs and the time-intensive nature of the measurement process. In this paper, we present and evaluate a novel approach for trap model extraction that utilizes MHz load-line measurements. Our analysis includes a comparative study of the measurements and a demonstration of modeling based on the proposed methodology. KW - Compact modeling KW - Load-line KW - Model parameter extraction KW - GaN HEMT KW - ASM-HEMT Y1 - 2025 SN - 978-3-9820397-4-9 U6 - https://doi.org/10.23919/GeMiC64734.2025.10978988 SP - 451 EP - 454 PB - IEEE CY - Piscataway, NJ ER - TY - GEN A1 - Manchanda, Prabhav A1 - Knaack, Marcus A1 - Tost, Frank A1 - Andrei, Cristina A1 - Rudolph, Matthias T1 - Digitally reconfigurable power detector T2 - 2025 16th German Microwave Conference (GeMiC) N2 - This paper presents a reconfigurable diode detector operating at 24 GHz, capable of dynamically adjusting its output voltage and linear range through digital control of the load impedance. The variation in load impedance is initially achieved by employing a variable resistor within the baseband amplifier. Subsequently, the same effect is accomplished using a fully digital solution by configuring the internal programmable gain amplifier (PGA) of an analog-to-digital converter (ADC). The detector, the baseband amplifier, and the ADC are fabricated using commercially available components. Experimental results demonstrate that the linear range can be extended significantly by reducing the input impedance of the baseband amplifier, whereas an increase in impedance results in an elevated output voltage. Similar trends are observed when utilizing the PGA within the ADC. The results demonstrate a reconfigurable diode detector that employs digital control to dynamically optimize performance metrics, including output voltage and linear range. This adaptability renders it highly versatile and well-suited for a broad spectrum of modern RF system applications. KW - Diode detector KW - Radar KW - Reconfigurable power detector KW - Square-law detector Y1 - 2025 SN - 978-3-9820397-4-9 U6 - https://doi.org/10.23919/GeMiC64734.2025.10979055 SP - 439 EP - 442 PB - IEEE CY - Piscataway, NJ ER - TY - GEN A1 - Manchanda, Prabhav A1 - Knaack, Marcus A1 - Liao, Juhua A1 - Andrei, Cristina A1 - Rudolph, Matthias T1 - Detection of vital signs using noncoherent receivers T2 - 2025 22nd European Radar Conference (EuRAD) N2 - This work introduces a novel concept for detecting displacements, specifically vital signs resulting from physiological activity, using noncoherent receivers. A theoretical analysis of phase noise propagation in the receiver architecture reveals that individual uncorrelated phase noise contributions add at the intermediate frequency, thereby defining the detection sensitivity. System validation using a reflector mounted on a modulator producing controlled oscillations demonstrates the ability to detect sub-millimeter displacements, provided the residual phase noise from the uncorrelated oscillators remains low. Extending this concept, the system accurately detects respiration and cardiac activity, with results is comparable to those of a reference ECG sensor. These findings open new possibilities for multistatic vital sign detection systems, offering reliable, non-contact sensing for healthcare and remote monitoring applications. KW - Uncorrelated phase noise KW - Noncoherent radar KW - Vital signs KW - Multistatic radar Y1 - 2025 SN - 978-2-87487-083-5 U6 - https://doi.org/10.23919/EuRAD65285.2025.11233845 SP - 363 EP - 366 PB - IEEE CY - Piscataway, NJ ER - TY - GEN A1 - Krishnaji Rao, Megha A1 - Wentzel, Andreas A1 - Hoffmann, Thomas A1 - Schellhase, Lars A1 - A. Chevtchenko, Serguei A1 - Yazdani, Hossein A1 - Rudolph, Matthias T1 - Digital GaN-based transceiver architectures for sustainable 5G networks T2 - International journal of microwave and wireless technologies N2 - This paper presents two distinct configurations of a GaN-based digital transceiver (TRx) to evaluate their performance and integration efficiency. The first configuration, features a novel low-noise amplifier with integrated switching capability (LNAiS) and a digital class-E power amplifier (PA) on a single compact chip. The LNAiS eliminates the need for an external antenna switch, reducing module complexity and chip size while maintaining high performance. It achieves a gain of 12.7 dB and a noise figure of 3 dB at 4.7 GHz in Rx mode and provides over 20 dB isolation in Tx mode across 4.7–7.4 GHz. The digital PA demonstrates flexibility and efficiency, achieving 46% and 23% efficiencies for 20 MHz LTE and OFDM signals, respectively, and 22% for a 240 MHz OFDM signal with 10 dB PAPR. The second configuration integrates the same concept of digital PA with a standard LNA and an SPDT switch (LNAsS), achieving a gain of 24.8 dB and a noise figure of 2.65 dB at 4.2 GHz. This work highlights the trade-offs between these two architectures and demonstrates that the LNAiS-based approach drives the development of greener, more flexible, compact,lower-complexity, and cost-effective transceivers for 5G networks. KW - GaN KW - HEMT KW - MMIC KW - Transceiver KW - FEM KW - LNA KW - PA KW - spdt switch KW - Digital KW - PWM KW - Class-E KW - 5G Y1 - 2025 U6 - https://doi.org/10.1017/S1759078725102262 SN - 1759-0787 SP - 1 EP - 9 PB - Cambridge University Press (CUP) CY - Cambridge ER - TY - GEN A1 - Beleniotis, Petros A1 - Zervos, Christos A1 - Krause, Sascha A1 - Yazdani, Hossein A1 - Rudolph, Matthias T1 - Traps in GaN HEMTs : from characterization to model development and device optimization T2 - 2025 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) N2 - This paper reviews a comprehensive strategy designed to address the impact of traps across the entire field of GaN HEMT operation. It begins with the characterization of trap levels and the measurement of trap time constants. The study then progresses to TCAD simulations to examine the location of the observed trap levels and their effect on device performance. Finally, it introduces the development of a compact trap model grounded in Shockley-Read-Hall statistics. The proposed model is capable of accurately predicting trapping effects across all combinations of voltage, temperature, and time. The paper concludes by highlighting the synergy TCAD-compact-model, underscoring its utility in device optimization schemes. KW - GaN KW - Traps KW - Microwave KW - TCAD KW - ASM-HEMT Y1 - 2025 SN - 979-8-3315-9172-4 U6 - https://doi.org/10.1109/BCICTS63111.2025.11211504 SP - 1 EP - 8 PB - IEEE CY - Piscataway, NJ ER - TY - GEN A1 - Rao, Megha Krishnaji A1 - Beleniotis, Petros A1 - Hoffmann, Thomas A1 - Yazdani, Hossein A1 - Wentzel, Andreas A1 - Rudolph, Matthias T1 - Switch-integrated GaN LNAs : a technology-focused analysis T2 - 2025 20th European Microwave Integrated Circuits Conference (EuMIC) N2 - This paper presents the first circuit-level analysis of a two-stage GaN-HEMT LNA with an integrated switch, comparing two distinct technologies: one with a standard passivation layer (Type A) and another featuring an advanced passivation layer (Type B). Through a detailed evaluation of their performance in both amplification and isolation modes, the study highlights Type B as a significant advancement over Type A. Leveraging technological enhancements, including an improved passivation layer and slightly optimized component matching, Type B demonstrates superior performance. The results are compelling, with Type B achieving a gain of 19 dB, a low noise figure of 1.17dB, and small-signal isolation exceeding 30 dBm at 5.2 GHz. These achievements establish Type B as a formidable option for future 5G telecommunication systems, offering a performance that challenges traditional designs that use separate switches. Y1 - 2025 SN - 978-2-87487-082-8 U6 - https://doi.org/10.23919/EuMIC65284.2025.11234676 SP - 29 EP - 32 PB - IEEE CY - Piscataway, NJ ER - TY - GEN A1 - Okocha, Jonathan A1 - Andrei, Cristina A1 - Rudolph, Matthias T1 - On the repeatability of low cost varactor—based RF impedance tuners T2 - 2025 55th European Microwave Conference (EuMC) N2 - This paper introduces a concise methodology for assessing the repeatability of low-cost, varactor-based RF impedance tuners by employing a dB-based metric that quantifies how accurately each tuner reproduces a target impedance over repeated cycles. Both blocked and cyclical measurement strategies are used to highlight large impedance transitions near high-reflection states that exacerbate non-idealities. In addition, the method rigorously characterizes issues such as systematic offsets, drift, and hysteresis, common challenges that can impair tuner performance, allowing targeted improvements. Demonstrations with a BST varactor prototype underscore the importance of identifying and quantifying these effects to ensure consistent tuner performance in real-world RF testing environments. KW - RF impedance tuning KW - Tuner repeatability KW - Mechanical tuner KW - Electronic tuners KW - Load-pull KW - Measurement methodology KW - Smith chart tuners KW - dB-based metric KW - Tuner accuracy Y1 - 2025 SN - 978-2-87487-081-1 U6 - https://doi.org/10.23919/EuMC65286.2025.11234977 SP - 683 EP - 686 PB - IEEE CY - Piscataway, NJ ER - TY - CHAP A1 - Gailing, Ludger A1 - Naumann, Matthias A1 - Rudolph, David T1 - Local and regional conflicts in the energy transition T2 - Reference module in materials science and materials engineering N2 - Energy transitions are accompanied by a range of conflicts, which mostly occur at local and regional scales. To help understand these, this chapter provides a typology of energy conflicts, of which the most common are distribution and procedural conflicts. Energy conflicts entail material, spatial, temporal and actor dimensions. For both major types of energy conflict and their different dimensions, the chapter provides empirical examples from Denmark and the United Kingdom. Energy conflicts are a challenge for energy transitions, but they are also drivers of social change, which are inherent in the pluralistic structure of modern societies. KW - Energy geography KW - Infrastructure planning KW - Landscape KW - Localism KW - Regional development KW - Renewable energies KW - Wind energy Y1 - 2025 SN - 978-0-12-803581-8 U6 - https://doi.org/10.1016/B978-0-443-29210-1.00073-X SP - 1 EP - 9 PB - Elsevier BV CY - Amsterdam ER -