TY - GEN A1 - Le, Quang Huy A1 - Huynh, Dang Khoa A1 - Wang, Defu A1 - Kämpfe, Thomas A1 - Rudolph, Matthias T1 - Small-Signal Modelling of mm-Wave MOSFET up to 110 GHz in 22nm FDSOI Technology T2 - Proceedings of the 2019 IEEE Asia-Pacific Microwave Conference (APMC) : 10-13 December 2019, Marina Bay Sands, Singapore Y1 - 2019 SN - 978-1-7281-3517-5 U6 - https://doi.org/10.1109/APMC46564.2019.9038620 SP - 222 EP - 224 PB - IEEE CY - Piscataway, NJ ER - TY - GEN A1 - Kaule, Evelyne A1 - Luo, Peng A1 - Chevtchenko, Serguei A. A1 - Rudolph, Matthias A1 - Andrei, Cristina T1 - Compact Stacked Rugged GaN Low-Noise Amplifier MMIC under Input Power Overdrive Condition T2 - 18th European Microwave Integrated Circuits Conference (EuMIC),18-19 September 2023, Berlin Y1 - 2023 SN - 978-2-87487-073-6 SN - 979-8-3503-4833-0 U6 - https://doi.org/10.23919/EuMIC58042.2023.10288650 SP - 9 EP - 12 ER - TY - GEN A1 - Zervos, Christos A1 - Beleniotis, Petros A1 - Krause, Sascha A1 - Ritter, Dan A1 - Rudolph, Matthias T1 - The role of gate leakage on surface-related current collapse in AlGaN/GaN HEMTs T2 - 18th European Microwave Integrated Circuits Conference (EuMIC), 18-19 September 2023, Berlin Y1 - 2023 SN - 978-2-87487-073-6 SN - 979-8-3503-4833-0 U6 - https://doi.org/10.23919/EuMIC58042.2023.10289036 VL - 2023 SP - 297 EP - 300 ER - TY - GEN A1 - Sriperumbuduri, Venkata Pawan A1 - Yacoub, Hady A1 - Wentzel, Andreas A1 - Johansen, Tom K. A1 - Rudolph, Matthias T1 - Design and Analysis of a 50GHz InP DHBT Class-E Power Amplifer Providing 2.3 T2 - 18th European Microwave Integrated Circuits Conference (EuMIC), 18-19 September 2023, Berlin Y1 - 2023 U6 - https://doi.org/10.23919/EuMIC58042.2023.10288688 ER - TY - GEN A1 - Huynh, Dang Khoa A1 - Le, Quang Huy A1 - Lehmann, Steffen A1 - Zhao, Zhixing A1 - Bossu, Germain A1 - Arfaoui, Wafa A1 - Kämpfe, Thomas A1 - Rudolph, Matthias T1 - Impact of Off-State Stress on SiGe-channel p-FETs in 22nm FDSOI under Large-Signal Operation T2 - 18th European Microwave Integrated Circuits Conference (EuMIC), 18-19 September 2023, Berlin Y1 - 2023 SN - 978-2-87487-073-6 SN - 979-8-3503-4833-0 U6 - https://doi.org/10.23919/EuMIC58042.2023.10288886 SP - 173 EP - 176 ER - TY - CHAP A1 - Lenk, Friedrich A1 - Dörner, Ralf A1 - Rumiantsev, Andrej A1 - Rudolph, Matthias T1 - Calibration Residual Error Propagation Analysis Using Conformal Mapping T2 - 77th ARFTG Microwave Measurement Conference (ARFTG 2011), Baltimore, Maryland, USA, 10 June 2011 Y1 - 2011 SN - 978-1-61284-959-1 PB - Piscataway, NJ CY - IEEE ER - TY - GEN A1 - Tomaz, Antonio A1 - Gerlich, Stefan A1 - Rudolph, Matthias A1 - Andrei, Cristina T1 - A Novel System for Recovery Time Measurements of GaN-Based Low-Noise Amplifiers T2 - 2022 14th German Microwave Conference (GeMiC), Ulm, 16-18 May 2022 N2 - A novel setup allowing for recovery time measurement of robust GaN LNA is presented in this paper. The setup is based on an PNA-X vector network analyzer and allows for the characterization of the LNA's small-signal gain, while it also monitors overdrive pulse power and reflected pulse power. The system setup and operation is shown in detail. As an example, two different GaN LNAs were measured in order to validate the test setup. Y1 - 2022 UR - https://ieeexplore.ieee.org/document/9783536 SN - 978-3-9820397-2-5 SN - 2167-8022 SP - 65 EP - 68 PB - IEEE ER - TY - GEN A1 - Sriperumbuduri, Venkata Pawan A1 - Yacoub, Hady A1 - Johansen, Tom K. A1 - Wentzel, Andreas A1 - Dörner, Ralf A1 - Rudolph, Matthias T1 - Modeling Base-Collector Heterojunction Barrier Effect in InP DHBTs for Improved Large Singal Performance T2 - 2021 IEEE/MTT-S International Microwave Symposium : June 2021, Atlanta, Georgia, USA/20-25 June 2021, virtual event Y1 - 2021 SN - 978-1-66540-307-8 SN - 978-1-66543-141-5 U6 - https://doi.org/10.1109/IMS19712.2021.9575019 SP - 355 EP - 357 PB - IEEE CY - Piscataway ER - TY - GEN A1 - Le, Quang Huy A1 - Huynh, Dang Khoa A1 - Nayak, Anurag A1 - Lehmann, Steffen A1 - Zhao, Zhixing A1 - Kämpfe, Thomas A1 - Rudolph, Matthias T1 - Large-Signal Medeling for Nonlinear Analysis of Experimental Devices in 22nm FDSOI Technology T2 - 16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, UK Y1 - 2022 SN - 978-2-87487-064-4 SN - 978-1-6654-4722-5 U6 - https://doi.org/10.23919/EuMIC50153.2022.9784055 SP - 17 EP - 20 ER - TY - GEN A1 - Beleniotis, Petros A1 - Chevtchenko, Serguei A. A1 - Rudolph, Matthias T1 - Statistical Medeling of GaN HEMTs by Direct Transfer of Veriations to Model Parameters T2 - 16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, United Kingdom Y1 - 2022 SN - 978-2-87487-064-4 SN - 978-1-6654-4722-5 U6 - https://doi.org/10.23919/EuMIC50153.2022.9783780 SP - 63 EP - 66 ER - TY - GEN A1 - Haque, Sanaul A1 - Schnieder, Frank A1 - Hilt, Oliver A1 - Dörner, Ralf A1 - Brunner, Frank A1 - Rudolph, Matthias T1 - Noise Medeling of GaN/AIN HEMT T2 - 16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, United Kingdom Y1 - 2022 SN - 978-2-87487-064-4 SN - 978-1-6654-4722-5 U6 - https://doi.org/10.23919/EuMIC50153.2022.9783992 SP - 185 EP - 188 ER - TY - GEN A1 - Le, Quang Huy A1 - Huynh, Dang Khoa A1 - Lehmann, Steffen A1 - Zhao, Zhixing A1 - Kämpfe, Thomas A1 - Rudolph, Matthias T1 - Analysis of the Relaxed Contacted-Poly-Pitch Effect on the RF Performance of Strained-SiGe-Channel p-FETs in 22 nm FDSOI Technology T2 - 16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, United Kingdom Y1 - 2022 SN - 978-2-87487-064-4 SN - 978-1-6654-4722-5 U6 - https://doi.org/10.23919/EuMIC50153.2022.9783713 SP - 22 EP - 25 PB - IEEE ER - TY - GEN A1 - Shrestha, Amit A1 - Dörner, Ralf A1 - Yacoub, Hady A1 - Johansen, Tom K. A1 - Heinrich, Wolfgang A1 - Krozer, Viktor A1 - Rudolph, Matthias A1 - Wentzel, Andreas T1 - A 100 GHz Class-F-Like InP-DHBT PA with 25,4%PAE T2 - 16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, United Kingdom Y1 - 2022 SN - 978-2-87487-064-4 SN - 978-1-6654-4722-5 U6 - https://doi.org/10.23919/EuMIC50153.2022.9783638 SP - 225 EP - 228 ER - TY - GEN A1 - Kaule, Evelyne A1 - Andrei, Cristina A1 - Rudolph, Matthias T1 - Output Power Limited Rugged GaN LNA MMIC T2 - 16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, United Kingdom Y1 - 2022 SN - 978-2-87487-064-4 SN - 978-1-6654-4722-5 U6 - https://doi.org/10.23919/EUMIC50153.2022.9784020 SP - 133 EP - 135 ER - TY - GEN A1 - Huynh, Dang Khoa A1 - Le, Quang Huy A1 - Duhan, Pardeep A1 - Wang, Defu A1 - Kämpfe, Thomas A1 - Rudolph, Matthias T1 - Analysis of Hot-Carrier Degradation in 22nm FDSOI Transistors Using RF Small-Signal Characteristics T2 - 2020 German Microwave Conference (GeMiC), 09-11 March 2020, Cottbus, Germany Y1 - 2020 UR - https://ieeexplore.ieee.org/abstract/document/9080227 SN - 978-3-9820-3971-8 SN - 978-1-7281-4206-7 SN - 2167-8022 SP - 244 EP - 247 PB - IEEE CY - Piscataway ER - TY - GEN A1 - Erkelenz, Kevin A1 - Sriperumbuduri, Venkata Pawan A1 - Flisgen, Thomas A1 - Rudolph, Matthias A1 - Johansen, Tom K. A1 - Heinrich, Wolfgang A1 - Wentzel, Andreas T1 - Output Matching Network Design for Highly Efficient InP-DHBT W-Band PAs Utilizing a Defected Ground Structure T2 - 2020 German Microwave Conference (GeMiC), 09-11 March 2020, Cottbus, Germany Y1 - 2020 UR - https://ieeexplore.ieee.org/document/9080208 SN - 978-3-9820-3971-8 SN - 978-1-7281-4206-7 N1 - INSPEC Accession Number: 19575344 SP - 268 EP - 271 PB - IEEE ER - TY - BOOK A1 - Heymann, Peter A1 - Rudolph, Matthias T1 - A Guido to Noise in Microwave Circuits: Devices, Circuits and Measurement Y1 - 2021 SN - 978-1-119-85936-9 PB - IEEE Press [u.a.] CY - Piscataway, NJ ER - TY - GEN A1 - Krause, Sascha A1 - Beleniotis, Petros A1 - Bengtsson, Olof A1 - Rudolph, Matthias A1 - Heinrich, Wolfgang T1 - Characterization of the Impairment and Recovery of GaN-HEMTs in Low-Noise Amplifiers under Input Overdrive T2 - 2021 IEEE MTT-S International Microwave Symposium (IMS), 07-25 June 2021, Atlanta, GA, USA Y1 - 2021 SN - 978-1-6654-0307-8 SN - 978-1-6654-3141-5 U6 - https://doi.org/10.1109/IMS19712.2021.9574839 SN - 2576-7216 SN - 0149-645X SP - 515 EP - 518 ER - TY - GEN A1 - Beleniotis, Petros A1 - Schnieder, Frank A1 - Rudolph, Matthias T1 - Simulating Drain Lag of GaN HEMTs with physics-based ASM Model T2 - 2020 15th European Microwave Integrated Circuits Conference (EuMIC), 10-15 January 2021, Utrecht, Netherlands Y1 - 2021 UR - https://ieeexplore.ieee.org/document/9337389 SN - 978-2-87487-060-6 SN - 978-1-7281-7040-4 SP - 165 EP - 168 ER - TY - BOOK A1 - Vendelin, George D. A1 - Pavio, Anthony M. A1 - Rohde, Ulrich L. A1 - Rudolph, Matthias T1 - Microwave circuit design:using linear and nonlinear techniques Y1 - 2021 SN - 978-1-118-44975-2 SN - 978-1-119-74169-5 PB - Wiley CY - Hoboken, N.J. ET - Third edition ER - TY - GEN A1 - Kaule, Evelyne A1 - Andrei, Cristina A1 - Gerlich, Stefan A1 - Dörner, Ralf A1 - Rudolph, Matthias T1 - Limiting the Output Power of Rugged GaN LNAs T2 - 14th European Microwave Integrated Circuits Conference (EuMIC) N2 - Rugged GaN HEMT low-noise amplifiers are well established, but the common concept of achieving ruggedness by applying the gate supply voltage through a high ohmic resistance might not be sufficient in addition to control the maximum output power. This paper shifts the focus to the protection of subsequent stages and proposes a circuit concept based on an output attenuator and an adaptive drain supply. It is shown that the concept implementation provides an attenuation of up to 28dB under input overdrive condition while leaving small-signal noise Figure unaffected. KW - Power generation; Logic Gates; Gallium nitride; Attenuators; HEMTs; Printed circuits; Power measurement; Limit; GaN; HEMT; ruggedness; low noise amplifier (LNA); receiver Y1 - 2019 SN - 978-2-87487-056-9 SN - 978-1-7281-0768-4 U6 - https://doi.org/10.23919/EuMIC.2019.8909653 SP - 240 EP - 242 CY - Paris, France ER - TY - GEN A1 - Kaule, Evelyne A1 - Andrei, Cristina A1 - Gerlich, Stefan A1 - Dörner, Ralf A1 - Rudolph, Matthias T1 - Limiting the Output Power of Rugged GaN LNAs T2 - Proceedings of 49th European Microwave Conference (EuMC) N2 - Rugged GaN HEMT low-noise amplifiers are well established, but the common concept of achieving ruggedness by applying the gate supply voltage through a high ohmic resistance might not be sufficient in addition to control the maximum output power. This paper shifts the focus to the protection of subsequent stages and proposes a circuit concept based on an output attenuator and an adaptive drain supply. It is shown that the concept implementation provides an attenuation of up to 28 dB under input overdrive condition while leaving small-signal noise figure unaffected. KW - Power generation; Logic Gates; Gallium nitride; Attenuators; HEMTs; Printed circuits; Power measurement; Limit; GaN; HEMT; ruggedness; low noise amplifier (LNA); receiver Y1 - 2019 SN - 978-2-87487-055-2 SN - 978-1-7281-1798-0 U6 - https://doi.org/10.23919/EuMC.2019.8910675 SP - 794 EP - 796 CY - Paris, France ER - TY - JOUR A1 - Rudolph, Matthias A1 - Behtash, Reza A1 - Hirche, Klaus A1 - Würfl, Joachim A1 - Heinrich, Wolfgang A1 - Tränkle, Günther T1 - A Highly Survivable 3-7 GHz GaN Low-Noise Amplifier Y1 - 2006 ER - TY - GEN A1 - Rudolph, Matthias A1 - Achouche, M. A1 - Kraus, S. A1 - Spitzbart, Th. A1 - Kurpas, Paul A1 - Rentner, D. A1 - Brunner, F. A1 - Richter, E. A1 - Bergunde, T. A1 - Heymann, Peter A1 - Wolter, P. A1 - Wittrich, H. A1 - Weyers, M. A1 - Würfl, Joachim A1 - Tränkle, Günther T1 - InGaP/GaAs Power HBTs for L-Band Applications Y1 - 1999 ER - TY - GEN A1 - Rudolph, Matthias A1 - Meliani, Chafik A1 - Kurpas, Paul A1 - Schmidt, L. A1 - Rheinfelder, C. N. A1 - Heinrich, Wolfgang T1 - A 2.4 GHz GaAs-HBT Class-E MMIC Amplifier with 65% PAE Y1 - 2007 ER - TY - GEN A1 - Rudolph, Matthias A1 - Würfl, Joachim A1 - Kurpas, Paul A1 - Brunner, F. A1 - Mai, M. T1 - Degradation properties of MOVPE-grown GaInP/GaAs HBTs under combined temperatureand current stressing Y1 - 2001 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Beilenhoff, K. A1 - Dörner, Ralf A1 - Heymann, Peter T1 - Scalable GaInP/GaAs HBT Large-Signal Model Y1 - 2000 ER - TY - JOUR A1 - Rudolph, Matthias T1 - Limitations of Current Compact Transit-Time Models for III-V-Based HBTs Y1 - 2008 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Heymann, Peter T1 - On Compact HBT RF Noise Modeling Y1 - 2007 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Meliani, Chafik A1 - Heinrich, Wolfgang T1 - A 40 Gbps GaAs-HBT Distributed Amplifier with an Over-fT Cut-Off Frequency: Analyticaland Experimental Study Y1 - 2005 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Meliani, Chafik A1 - Dörner, Ralf A1 - Heinrich, Wolfgang T1 - Bandwidth Potential of HBT-Based TWAs as a Function of Transistor fmax/fT Ratio Y1 - 2008 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Tischler, Th. A1 - Kilk, A. A1 - Heinrich, Wolfgang T1 - Via Arrays for Grounding in Multilayer Packaging - Frequency Limits and Design Rules Y1 - 2003 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Rheinfelder, C. N. A1 - Beißwanger, F. A1 - Heinrich, Wolfgang T1 - Nonlinear Modeling of SiGe HBTs up to 50 GHz Y1 - 1997 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Dörner, Ralf A1 - Heymann, Peter T1 - GaAs HBT Operating as Integrated V- to W-Band Gunn Oscillator Y1 - 2002 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Schnieder, Frank A1 - Heinrich, Wolfgang T1 - Modeling Emitter Breakdown in GaAs-Based HBTs Y1 - 2002 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Dörner, Ralf T1 - Large-Signal Modeling of High-Voltage GaAs Power HBTs Y1 - 2005 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Dörner, Ralf T1 - Large-Signal HBT Model Requirements to Predict Nonlinear Behaviour Y1 - 2004 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Dörner, Ralf A1 - Heymann, Peter T1 - On the Gunn Effect in GaAs HBTs Y1 - 2001 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Sheinman, B. A1 - Wasige, E. A1 - Dörner, Ralf A1 - Sidorov, V. A1 - Cohen, S. A1 - Ritter, Dan T1 - A Peeling Algorithm for Extraction of the HBT Small-Signal Equivalent Circuit Y1 - 2002 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Behtash, Reza A1 - Dörner, Ralf A1 - Hirche, Klaus A1 - Wurfl, Joachim A1 - Heinrich, Wolfgang A1 - Tränkle, Günther T1 - Analysis of the Survivability of GaN Low-Noise Amplifiers Y1 - 2007 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Khalil, I. A1 - Liero, Armin A1 - Lossy, Richard A1 - Heinrich, Wolfgang T1 - GaN HEMT Potential for Low Noise Highly Linear RF Applications Y1 - 2008 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Dörner, Ralf A1 - Heymann, R. A1 - Klapproth, L. A1 - Böck, Georg T1 - Direct Extraction of FET Noise Models from Noise Figure Measurements Y1 - 2002 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Meliani, Chafik T1 - On the Correlation between Eye-Diagram and Frequency Characteristics of GaAs-HBT TWAsfor 20 and 40 Gbps NRZ Signals Y1 - 2006 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Korndörfer, Falk A1 - Heymann, Peter A1 - Heinrich, Wolfgang T1 - Compact Large-Signal Shot-Noise Model for HBTs Y1 - 2008 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Dörner, Ralf A1 - Heymann, R. A1 - Beilenhoff, K. T1 - Unified Model for Collector Charge in Heterojunction Bipolar Transistors Y1 - 2002 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Dörner, Ralf T1 - Consistent Modeling of Capacitances and Transit Times of GaAs-Based HBTs Y1 - 2005 ER - TY - JOUR A1 - Rudolph, Matthias T1 - Uniqueness Problems in Compact HBT Models Caused by Thermal Effects Y1 - 2004 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Dörner, Ralf A1 - Klapproth, L. A1 - Heymann, Peter A1 - Prinzler, H. A1 - Böck, Georg T1 - Experimental Evaluation of Microwave Field-EffectTransistor Noise Models Y1 - 1999 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Dörner, Ralf A1 - Heymann, Peter A1 - Beilenhoff, K. T1 - Scalable GaInP/GaAs HBT Large-Signal Model Y1 - 2000 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Dörner, Ralf A1 - Heymann, Peter T1 - Multiharmonic Generators for Relative Phase Calibration of Nonlinear Network Analyzers Y1 - 2001 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Dörner, Ralf A1 - Klapproth, L. A1 - Heymann, Peter T1 - An HBT Noise Model Valid up to Transit Frequency Y1 - 1999 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Dörner, Ralf A1 - Heymann, Peter T1 - Harmonic Tuning of Power Transistors by Active Load-Pull Measurement Y1 - 2000 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Dörner, Ralf A1 - Heymann, Peter T1 - Direct Extraction of HBT Equivalent Circuit Elements Y1 - 1999 ER - TY - GEN A1 - Rudolph, Matthias A1 - Dörner, Ralf T1 - Selected Topics on Microwave Measurements, Noise in Devices and Circuits, and TransistorModeling. A Festschrift for Peter Heymann Y1 - 2005 SN - 3-86537-328-3 ER - TY - BOOK A1 - Rohde, Ulrich L. A1 - Rudolph, Matthias T1 - RF/Microwave Circuit Design for Wireless Applications Y1 - 2012 SN - 978-0-470-90181-6 PB - Wiley CY - Hoboken, NJ ET - 2. ed. ER - TY - BOOK A1 - Rudolph, Matthias T1 - Introduction to Modeling HBTs Y1 - 2006 SN - 1-58053-144-X PB - Artech House CY - Boston, Mass. ER - TY - GEN A1 - Johansen, Tom K. A1 - Rudolph, Matthias A1 - Jensen, Thomas A1 - Kraemer, Tomas A1 - Weimann, Nils A1 - Schnieder, Frank A1 - Krozer, Viktor A1 - Heinrich, Wolfgang T1 - Modeling of InP HBTs in Transferred-Substrate Technology for Millimeter-Wave Applications T2 - Microwave Integrated Circuits Conference (EuMIC), 2013, 8th European, 6–8 October 2013 Nuremberg, Germany Y1 - 2013 SN - 978-2-87487-032-3 SP - 280 EP - 283 PB - IEEE CY - Piscataway, NJ ER -