TY - GEN A1 - Kaule, Evelyne A1 - Luo, Peng A1 - Chevtchenko, Serguei A. A1 - Andrei, Cristina A1 - Rudolph, Matthias T1 - Analysis for the optimization of a rugged GaN low-noise amplifier MMIC with a compact stacked first amplifier stage T2 - 2024 IEEE International Conference on Microwaves, Communications, Antennas, Biomedical Engineering and Electronic Systems (COMCAS) Y1 - 2024 U6 - https://doi.org/10.1109/COMCAS58210.2024.10666226 SP - 1 EP - 4 PB - IEEE ER - TY - GEN A1 - Haque, Sanaul A1 - Beleniotis, Petros A1 - Yazdani, Hossein A1 - Rudolph, Matthias T1 - Ka-Band GaN power amplifier with integrated DC supply switch and RF switch T2 - 2024 25th International Microwave and Radar Conference (MIKON) Y1 - 2024 U6 - https://doi.org/10.23919/MIKON60251.2024.10633971 SP - 1 EP - 5 PB - IEEE ER - TY - CHAP A1 - Naumann, Matthias A1 - Rudolph, David T1 - Ländliche Utopien als infrastrukturelle Utopien : Progressive Alternativen zu infrastruktureller Peripherisierung und infrastrukturellem Populismus. T2 - Ländliche Utopien : Herausforderungen und Alternativen regionaler Entwicklungen. Y1 - 2024 SN - 978-3-8394-7233-0 U6 - https://doi.org/10.1515/9783839472330 SP - 115 EP - 126 PB - Transcript Verlag CY - Bielefeld ER - TY - GEN A1 - Kaule, Evelyne A1 - Yazdani, Hossein A1 - Rudolph, Matthias T1 - Highly Linear Concurrent Tri-Band GaN LNA MMIC for 0.8/1.8/3.6 GHz Applications T2 - 24th International Microwave and Radar Conference (MIKON) Y1 - 2022 SN - 978-83-956020-3-0 SN - 978-1-6654-1106-6 U6 - https://doi.org/10.23919/Mikon54314.2022.9924770 ER - TY - GEN A1 - Manchanda, Prabhav A1 - Okocha, Jonathan A1 - Rudolph, Matthias T1 - Improved Sensitivity of Zero Bias Diode Power Detectors using Impedance Tuners T2 - IEEE Microwaves, Antennas, and Propagation Conference (MAPCON) Y1 - 2022 SN - 978-1-6654-5203-8 SN - 978-1-6654-5204-5 U6 - https://doi.org/10.1109/MAPCON56011.2022.10047233 SP - 1261 EP - 1266 ER - TY - GEN A1 - Rao, Megha Krishnaji A1 - Dörner, Ralf A1 - Yazdani, Hossein A1 - Rudolph, Matthias T1 - GaN-HEMT Based Common-Gate LNA MMIC with Integrated Switch for Compact 5G Transceivers T2 - IEEE Microwaves, Antennas, and Propagation Conference (MAPCON) Y1 - 2022 SN - 978-1-6654-5203-8 SN - 978-1-6654-5204-5 U6 - https://doi.org/10.1109/MAPCON56011.2022.10047410 SP - 1104 EP - 1107 ER - TY - GEN A1 - Sriperumbuduri, Venkata Pawan A1 - Wenzel, Andreas A1 - Rudolph, Matthias T1 - Mathematical Analysis of Switching HBT Devices T2 - IEEE Microwaves, Antennas, and Propagation Conference (MAPCON), 12-16 December 2022, Bangalore, India Y1 - 2022 SN - 978-1-6654-5203-8 SN - 978-1-6654-5204-5 U6 - https://doi.org/10.1109/MAPCON56011.2022.10047449 SP - 827 EP - 831 ER - TY - GEN A1 - Beleniotis, Petros A1 - Schnieder, Frank A1 - Chevtchenko, Serguei A. A1 - Rudolph, Matthias T1 - Localization of Trapping Effects in GaN HEMTs with Pulsed S-parameters and Compact Models T2 - 17th European Microwave Integrated Circuits Conference (EuMIC) Y1 - 2022 SN - 978-2-87487-070-5 SN - 978-1-6654-5880-1 U6 - https://doi.org/10.23919/EuMIC54520.2022.9923511 SP - 149 EP - 152 ER - TY - GEN A1 - Huynh, Dang Khoa A1 - Le, Quang Huy A1 - Lehmann, Steffen A1 - Zhao, Zhixing A1 - Bossu, Germain A1 - Arfaoui, Wafa A1 - Kämpfe, Thomas A1 - Rudolph, Matthias T1 - Impact of Off-State Stress on SiGe-channel p-FETs in 22nm FDSOI under Large-Signal Operation T2 - 18th European Microwave Integrated Circuits Conference (EuMIC), 18-19 September 2023, Berlin Y1 - 2023 SN - 978-2-87487-073-6 SN - 979-8-3503-4833-0 U6 - https://doi.org/10.23919/EuMIC58042.2023.10288886 SP - 173 EP - 176 ER - TY - GEN A1 - Zervos, Christos A1 - Beleniotis, Petros A1 - Krause, Sascha A1 - Ritter, Dan A1 - Rudolph, Matthias T1 - The role of gate leakage on surface-related current collapse in AlGaN/GaN HEMTs T2 - 18th European Microwave Integrated Circuits Conference (EuMIC), 18-19 September 2023, Berlin Y1 - 2023 SN - 978-2-87487-073-6 SN - 979-8-3503-4833-0 U6 - https://doi.org/10.23919/EuMIC58042.2023.10289036 VL - 2023 SP - 297 EP - 300 ER - TY - GEN A1 - Sriperumbuduri, Venkata Pawan A1 - Yacoub, Hady A1 - Wentzel, Andreas A1 - Johansen, Tom K. A1 - Rudolph, Matthias T1 - Design and Analysis of a 50GHz InP DHBT Class-E Power Amplifer Providing 2.3 T2 - 18th European Microwave Integrated Circuits Conference (EuMIC), 18-19 September 2023, Berlin Y1 - 2023 U6 - https://doi.org/10.23919/EuMIC58042.2023.10288688 ER - TY - GEN A1 - Haque, Sanaul A1 - Andrei, Cristina A1 - Yazdani, Hossein A1 - Rudolph, Matthias T1 - On the Survivability of a 28 - 32 GHz GaN Low Noise Amplifier T2 - 18th European Microwave Integrated Circuits Conference (EuMIC), 18-19 September 2023, Berlin Y1 - 2023 SN - 978-2-87487-073-6 SN - 979-8-3503-4833-0 U6 - https://doi.org/10.23919/EuMIC58042.2023.10288728 ER - TY - GEN A1 - Kaule, Evelyne A1 - Luo, Peng A1 - Chevtchenko, Serguei A. A1 - Rudolph, Matthias A1 - Andrei, Cristina T1 - Compact Stacked Rugged GaN Low-Noise Amplifier MMIC under Input Power Overdrive Condition T2 - 18th European Microwave Integrated Circuits Conference (EuMIC),18-19 September 2023, Berlin Y1 - 2023 SN - 978-2-87487-073-6 SN - 979-8-3503-4833-0 U6 - https://doi.org/10.23919/EuMIC58042.2023.10288650 SP - 9 EP - 12 ER - TY - GEN A1 - Beleniotis, Petros A1 - Zervos, Christos A1 - Schnieder, Frank A1 - Rudolph, Matthias T1 - Dynamic RD Modeling by Exploiting Gate Current Dependency of Virtual Gate Effect T2 - 18th European Microwave Integrated Circuits Conference (EuMIC),18-19 September 2023, Berlin Y1 - 2023 SN - 978-2-87487-073-6 SN - 979-8-3503-4833-0 U6 - https://doi.org/10.23919/EuMIC58042.2023.10288955 SP - 1 EP - 4 ER - TY - GEN A1 - Rao, Megha Krishnaji A1 - Dörner, Ralf A1 - Chevtchenko, Serguei A. A1 - Haque, Sanaul A1 - Rudolph, Matthias T1 - Common-Gate LNA MMIC With Switching Feature Using GaN-HEMT for 5G RF Front-Ende T2 - IEEE Microwave and Wireless Technology Letters Y1 - 2023 U6 - https://doi.org/10.1109/LMWT.2023.3306177 SN - 2771-9588 SN - 2771-957X VL - 33 IS - 10 SP - 1446 EP - 1449 ER - TY - GEN A1 - Le, Quang Huy A1 - Huynh, Dang Khoa A1 - Lehmann, Steffen A1 - Zhao, Zhixing A1 - Schwan, Christoph T. A1 - Kämpfe, Thomas A1 - Rudolph, Matthias T1 - 22-nm FDSOI CMOS Noise Modeling and Anlaysis in mm-Wave Frequency Range T2 - 23rd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 22 February 2023, Las Vegas, NV, USA Y1 - 2023 SN - 978-1-6654-9319-2 SN - 978-1-6654-9320-8 U6 - https://doi.org/10.1109/SiRF56960.2023.10046210 SN - 2474-9761 SP - 31 EP - 33 ER - TY - CHAP A1 - Rudolph, Matthias ED - Hartnagel, Hans L. ED - Quay, Rüdiger ED - Rohde, Ulrich L. ED - Rudolph, Matthias T1 - Wave Propagation on Transmission Lines and Cables T2 - Fundamentals of RF and Microwave Techniques and Technologies Y1 - 2023 SN - 978-3-030-94098-0 U6 - https://doi.org/10.1007/978-3-030-94100-0_2 SP - 55 EP - 142 PB - Springer CY - Cham ER - TY - CHAP A1 - Rudolph, Matthias ED - Hartnagel, Hans L. ED - Quay, Rüdiger ED - Rohde, Ulrich L. ED - Rudolph, Matthias T1 - Properties of Coaxial Cables and Transmission Lines, Directional Couplers and RF Filters T2 - Fundamentals of RF and Microwave Techniques and Technologies Y1 - 2023 SN - 978-3-030-94098-0 U6 - https://doi.org/10.1007/978-3-030-94100-0_4 SP - 197 EP - 333 PB - Springer CY - Cham ER - TY - CHAP A1 - Rudolph, Matthias ED - Hartnagel, Hans L. ED - Quay, Rüdiger ED - Rohde, Ulrich L. ED - Rudolph, Matthias T1 - Interference and Noise T2 - Fundamentals of RF and Microwave Techniques and Technologies Y1 - 2023 SN - 978-3-030-94098-0 U6 - https://doi.org/10.1007/978-3-030-94100-0_8 SP - 747 EP - 791 PB - Springer CY - Cham ER - TY - GEN A1 - Yazdani, Hossein A1 - Beleniotis, Petros A1 - Brunner, Frank A1 - Ostermay, Ina A1 - Würfl, Joachim A1 - Rudolph, Matthias A1 - Heinrich, Wolfgang A1 - Hilt, Oliver T1 - K/Ka-Band-GaN-High-Electron-Mobility Transistors Technology with 700 mS mm-1 Extrinsic Transconductance T2 - Physica Status Solidi Y1 - 2024 U6 - https://doi.org/10.1002/pssa.202400592 ER - TY - GEN A1 - Kared, Trusha A1 - Silaghi, Helga A1 - Rudolph, Matthias A1 - Silaghi, Andrei A1 - Rohde, Ulrich L. T1 - Design of a fixed IF down-conversion double-balanced mixer for UHF band applications T2 - Sensors N2 - This paper presents a new SiGe HBT-based high dynamic range double-balanced down-conversion differential mixer. Operating within the 0.5 GHz to 1.8 GHz range, the suggested mixer is appropriate for a variety of applications, such as cellular base stations, satellite communication (SATCOM), and military radar. The down-conversion mixer is made up of a single-ended to a differential-balanced radiofrequency (RF) stage, a dual feedback linearization for the RF stage, a local oscillator (LO) balun, LO mixing cores, and a fixed intermediate frequency (IF)-tuned circuit connected between two outputs to serve as a load at 145 MHz. Compared to earlier research in the literature, the measured SSB noise figure is approximately 7 dB ± 0.4 dB, and the measured conversion gain is approximately 12 dB ± 1 dB for a full band of operation. The mixer achieves a good return loss of over 8 dB for an RF and LO port in the desired band and a measured return loss of over 18 dB at 145 MHz and IF frequency. Furthermore, the design achieved an RF-to-IF isolation of greater than 35 dB, LO feedthrough, and an LO leakage isolation of better than 50 dB. Lastly, the measured third-order intercept point was found to be +4.7 dBm, and the 1 dB compression point was approximately −8 dBm. These results demonstrate good linearity performance. KW - Military radar KW - Satellite communication (SATCOM) KW - Cellular base stations KW - Mixer KW - Lo balun KW - Impedance matching Y1 - 2025 U6 - https://doi.org/10.3390/s25030608 SN - 1424-8220 VL - 25 IS - 3 SP - 1 EP - 29 PB - MDPI CY - Basel ER - TY - GEN A1 - Haque, Sanaul A1 - Doerner, Ralf A1 - Chevtchenko, Serguei A1 - Rudolph, Matthias T1 - Linearity enhancement of GaN LNA MMIC using RF-based approach of derivative superposition T2 - 2025 20th European Microwave Integrated Circuits Conference (EuMIC) N2 - This work presents a new methodology of implementing the derivative superposition (DS) technique based on third-order intermodulation current cancellation using harmonic-balance simulation. This approach is especially suitable for high-frequency applications due to the loading effect in transistors connected in parallel. To the best of the authors' knowledge, this work demonstrates for the first time the implementation of the DS technique in GaN-based LNA MMIC. As a proof of concept, two single-stage 4.5−5.5 GHz LNA MMICs, with and without DS technique, are designed using FBH 250 nm GaN on SiC process, with a focus on improving linearity without additional power consumption. A two-tone measurement around 5 GHz shows a 6 dB output third-order intercept point (OIP3) improvement, from 38.7 dBm for a conventional LNA to 44.9 dBm for an LNA with DS. This leads to an improvement in the linearity figure of merit (LFOM = OIP3/Pdc) from 6.6 to 28. KW - Derivative superposition KW - GaN HEMT KW - Intermodulation distortion KW - Linearity KW - Low-noise amplifier Y1 - 2025 SN - 978-2-87487-082-8 U6 - https://doi.org/10.23919/EuMIC65284.2025.11234643 SP - 25 EP - 28 PB - IEEE CY - Piscataway, NJ ER - TY - GEN A1 - Beleniotis, Petros A1 - Andrei, Cristina A1 - Zervos, Christos A1 - Rohde, Ulrich L. A1 - Rudolph, Matthias T1 - GaN trap model extraction based on MHz load-line measurements T2 - 2025 IEEE/MTT-S International Microwave Symposium - IMS 2025 N2 - The extraction of model parameters for GaN HEMTs is a challenging task that typically requires a comprehensive series of pulsed measurements to ensure that the resulting model is both accurate and convergence-stable. This study introduces, for the first time, an extraction procedure that utilizes I-V curves generated by MHz load-line measurements, effectively replacing the complex and time-intensive pulsed measurements. A drain-lag model extraction was based on load-line I-V curves and validated along with a pulsed-IV-based model through RF large-signal simulations, demonstrating excellent performance. KW - GaN KW - Compact model KW - Load-line KW - Model parameter extraction Y1 - 2025 SN - 979-8-3315-1409-9 U6 - https://doi.org/10.1109/IMS40360.2025.11104000 SP - 1059 EP - 1062 PB - IEEE CY - Piscataway, NJ ER - TY - GEN A1 - Beleniotis, Petros A1 - Andrei, Cristina A1 - Rohde, Ulrich L. A1 - Rudolph, Matthias T1 - Determining GaN HEMT trap models from MHz load-line measurement — synthesis and evaluation T2 - 2025 16th German Microwave Conference (GeMiC) N2 - The modeling of GaN HEMTs is closely associated with pulsed measurements, which are essential for extracting model parameters related to trapping and thermal effects. However, these characterizations are often hindered by high costs and the time-intensive nature of the measurement process. In this paper, we present and evaluate a novel approach for trap model extraction that utilizes MHz load-line measurements. Our analysis includes a comparative study of the measurements and a demonstration of modeling based on the proposed methodology. KW - Compact modeling KW - Load-line KW - Model parameter extraction KW - GaN HEMT KW - ASM-HEMT Y1 - 2025 SN - 978-3-9820397-4-9 U6 - https://doi.org/10.23919/GeMiC64734.2025.10978988 SP - 451 EP - 454 PB - IEEE CY - Piscataway, NJ ER - TY - GEN A1 - Manchanda, Prabhav A1 - Knaack, Marcus A1 - Tost, Frank A1 - Andrei, Cristina A1 - Rudolph, Matthias T1 - Digitally reconfigurable power detector T2 - 2025 16th German Microwave Conference (GeMiC) N2 - This paper presents a reconfigurable diode detector operating at 24 GHz, capable of dynamically adjusting its output voltage and linear range through digital control of the load impedance. The variation in load impedance is initially achieved by employing a variable resistor within the baseband amplifier. Subsequently, the same effect is accomplished using a fully digital solution by configuring the internal programmable gain amplifier (PGA) of an analog-to-digital converter (ADC). The detector, the baseband amplifier, and the ADC are fabricated using commercially available components. Experimental results demonstrate that the linear range can be extended significantly by reducing the input impedance of the baseband amplifier, whereas an increase in impedance results in an elevated output voltage. Similar trends are observed when utilizing the PGA within the ADC. The results demonstrate a reconfigurable diode detector that employs digital control to dynamically optimize performance metrics, including output voltage and linear range. This adaptability renders it highly versatile and well-suited for a broad spectrum of modern RF system applications. KW - Diode detector KW - Radar KW - Reconfigurable power detector KW - Square-law detector Y1 - 2025 SN - 978-3-9820397-4-9 U6 - https://doi.org/10.23919/GeMiC64734.2025.10979055 SP - 439 EP - 442 PB - IEEE CY - Piscataway, NJ ER - TY - GEN A1 - Manchanda, Prabhav A1 - Knaack, Marcus A1 - Liao, Juhua A1 - Andrei, Cristina A1 - Rudolph, Matthias T1 - Detection of vital signs using noncoherent receivers T2 - 2025 22nd European Radar Conference (EuRAD) N2 - This work introduces a novel concept for detecting displacements, specifically vital signs resulting from physiological activity, using noncoherent receivers. A theoretical analysis of phase noise propagation in the receiver architecture reveals that individual uncorrelated phase noise contributions add at the intermediate frequency, thereby defining the detection sensitivity. System validation using a reflector mounted on a modulator producing controlled oscillations demonstrates the ability to detect sub-millimeter displacements, provided the residual phase noise from the uncorrelated oscillators remains low. Extending this concept, the system accurately detects respiration and cardiac activity, with results is comparable to those of a reference ECG sensor. These findings open new possibilities for multistatic vital sign detection systems, offering reliable, non-contact sensing for healthcare and remote monitoring applications. KW - Uncorrelated phase noise KW - Noncoherent radar KW - Vital signs KW - Multistatic radar Y1 - 2025 SN - 978-2-87487-083-5 U6 - https://doi.org/10.23919/EuRAD65285.2025.11233845 SP - 363 EP - 366 PB - IEEE CY - Piscataway, NJ ER - TY - GEN A1 - Krishnaji Rao, Megha A1 - Wentzel, Andreas A1 - Hoffmann, Thomas A1 - Schellhase, Lars A1 - A. Chevtchenko, Serguei A1 - Yazdani, Hossein A1 - Rudolph, Matthias T1 - Digital GaN-based transceiver architectures for sustainable 5G networks T2 - International journal of microwave and wireless technologies N2 - This paper presents two distinct configurations of a GaN-based digital transceiver (TRx) to evaluate their performance and integration efficiency. The first configuration, features a novel low-noise amplifier with integrated switching capability (LNAiS) and a digital class-E power amplifier (PA) on a single compact chip. The LNAiS eliminates the need for an external antenna switch, reducing module complexity and chip size while maintaining high performance. It achieves a gain of 12.7 dB and a noise figure of 3 dB at 4.7 GHz in Rx mode and provides over 20 dB isolation in Tx mode across 4.7–7.4 GHz. The digital PA demonstrates flexibility and efficiency, achieving 46% and 23% efficiencies for 20 MHz LTE and OFDM signals, respectively, and 22% for a 240 MHz OFDM signal with 10 dB PAPR. The second configuration integrates the same concept of digital PA with a standard LNA and an SPDT switch (LNAsS), achieving a gain of 24.8 dB and a noise figure of 2.65 dB at 4.2 GHz. This work highlights the trade-offs between these two architectures and demonstrates that the LNAiS-based approach drives the development of greener, more flexible, compact,lower-complexity, and cost-effective transceivers for 5G networks. KW - GaN KW - HEMT KW - MMIC KW - Transceiver KW - FEM KW - LNA KW - PA KW - spdt switch KW - Digital KW - PWM KW - Class-E KW - 5G Y1 - 2025 U6 - https://doi.org/10.1017/S1759078725102262 SN - 1759-0787 SP - 1 EP - 9 PB - Cambridge University Press (CUP) CY - Cambridge ER - TY - GEN A1 - Beleniotis, Petros A1 - Zervos, Christos A1 - Krause, Sascha A1 - Yazdani, Hossein A1 - Rudolph, Matthias T1 - Traps in GaN HEMTs : from characterization to model development and device optimization T2 - 2025 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) N2 - This paper reviews a comprehensive strategy designed to address the impact of traps across the entire field of GaN HEMT operation. It begins with the characterization of trap levels and the measurement of trap time constants. The study then progresses to TCAD simulations to examine the location of the observed trap levels and their effect on device performance. Finally, it introduces the development of a compact trap model grounded in Shockley-Read-Hall statistics. The proposed model is capable of accurately predicting trapping effects across all combinations of voltage, temperature, and time. The paper concludes by highlighting the synergy TCAD-compact-model, underscoring its utility in device optimization schemes. KW - GaN KW - Traps KW - Microwave KW - TCAD KW - ASM-HEMT Y1 - 2025 SN - 979-8-3315-9172-4 U6 - https://doi.org/10.1109/BCICTS63111.2025.11211504 SP - 1 EP - 8 PB - IEEE CY - Piscataway, NJ ER - TY - GEN A1 - Rao, Megha Krishnaji A1 - Beleniotis, Petros A1 - Hoffmann, Thomas A1 - Yazdani, Hossein A1 - Wentzel, Andreas A1 - Rudolph, Matthias T1 - Switch-integrated GaN LNAs : a technology-focused analysis T2 - 2025 20th European Microwave Integrated Circuits Conference (EuMIC) N2 - This paper presents the first circuit-level analysis of a two-stage GaN-HEMT LNA with an integrated switch, comparing two distinct technologies: one with a standard passivation layer (Type A) and another featuring an advanced passivation layer (Type B). Through a detailed evaluation of their performance in both amplification and isolation modes, the study highlights Type B as a significant advancement over Type A. Leveraging technological enhancements, including an improved passivation layer and slightly optimized component matching, Type B demonstrates superior performance. The results are compelling, with Type B achieving a gain of 19 dB, a low noise figure of 1.17dB, and small-signal isolation exceeding 30 dBm at 5.2 GHz. These achievements establish Type B as a formidable option for future 5G telecommunication systems, offering a performance that challenges traditional designs that use separate switches. Y1 - 2025 SN - 978-2-87487-082-8 U6 - https://doi.org/10.23919/EuMIC65284.2025.11234676 SP - 29 EP - 32 PB - IEEE CY - Piscataway, NJ ER - TY - GEN A1 - Okocha, Jonathan A1 - Andrei, Cristina A1 - Rudolph, Matthias T1 - On the repeatability of low cost varactor—based RF impedance tuners T2 - 2025 55th European Microwave Conference (EuMC) N2 - This paper introduces a concise methodology for assessing the repeatability of low-cost, varactor-based RF impedance tuners by employing a dB-based metric that quantifies how accurately each tuner reproduces a target impedance over repeated cycles. Both blocked and cyclical measurement strategies are used to highlight large impedance transitions near high-reflection states that exacerbate non-idealities. In addition, the method rigorously characterizes issues such as systematic offsets, drift, and hysteresis, common challenges that can impair tuner performance, allowing targeted improvements. Demonstrations with a BST varactor prototype underscore the importance of identifying and quantifying these effects to ensure consistent tuner performance in real-world RF testing environments. KW - RF impedance tuning KW - Tuner repeatability KW - Mechanical tuner KW - Electronic tuners KW - Load-pull KW - Measurement methodology KW - Smith chart tuners KW - dB-based metric KW - Tuner accuracy Y1 - 2025 SN - 978-2-87487-081-1 U6 - https://doi.org/10.23919/EuMC65286.2025.11234977 SP - 683 EP - 686 PB - IEEE CY - Piscataway, NJ ER - TY - CHAP A1 - Gailing, Ludger A1 - Naumann, Matthias A1 - Rudolph, David T1 - Local and regional conflicts in the energy transition T2 - Reference module in materials science and materials engineering N2 - Energy transitions are accompanied by a range of conflicts, which mostly occur at local and regional scales. To help understand these, this chapter provides a typology of energy conflicts, of which the most common are distribution and procedural conflicts. Energy conflicts entail material, spatial, temporal and actor dimensions. For both major types of energy conflict and their different dimensions, the chapter provides empirical examples from Denmark and the United Kingdom. Energy conflicts are a challenge for energy transitions, but they are also drivers of social change, which are inherent in the pluralistic structure of modern societies. KW - Energy geography KW - Infrastructure planning KW - Landscape KW - Localism KW - Regional development KW - Renewable energies KW - Wind energy Y1 - 2025 SN - 978-0-12-803581-8 U6 - https://doi.org/10.1016/B978-0-443-29210-1.00073-X SP - 1 EP - 9 PB - Elsevier BV CY - Amsterdam ER -