TY - GEN A1 - Liero, Armin A1 - Dewitz, Mike A1 - Kühn, Silvio A1 - Chaturvedi, Nidhi A1 - Xu, Jijun A1 - Rudolph, Matthias T1 - On the Recovery Time of Highly Robust Low-Noise Amplifiers T2 - IEEE transactions on microwave theory and techniques KW - Amplifier noise KW - integrated circuit noise KW - microwave field-effect transistor (FET) amplifiers KW - monolithic microwave integrated circuit (MMIC) amplifiers KW - noise KW - semiconductor device noise KW - integrated circuit (MMIC) amplifiers Y1 - 2010 U6 - https://doi.org/10.1109/TMTT.2010.2041519 SN - 0018-9480 VL - 58 IS - 4 SP - 781 EP - 787 ER - TY - CHAP A1 - Rudolph, Matthias A1 - Andrei, Cristina A1 - Liero, Armin A1 - Lossy, Richard A1 - Heinrich, Wolfgang T1 - Highly Linear Broadband GaN-based Low-noise Amplifier Y1 - 2010 ER - TY - CHAP A1 - Rudolph, Matthias A1 - Flucke, Jens A1 - Schnieder, Frank A1 - Schmückle, Franz-Josef A1 - Heinrich, Wolfgang T1 - On the magnetic coupling between bondwires in power-transistor packages Y1 - 2010 ER - TY - CHAP A1 - Rudolph, Matthias T1 - Modeling GaN Power Transistors Y1 - 2010 U6 - https://doi.org/http://dx.doi.org/10.1109/WAMICON.2010.5461846 ER - TY - CHAP A1 - Rudolph, Matthias T1 - Compact HBT modeling: status and challenges Y1 - 2010 U6 - https://doi.org/10.1109/MWSYM.2010.5517597 ER - TY - CHAP A1 - Rudolph, Matthias A1 - Bengtsson, Olof A1 - Bent, G. van der A1 - Heinigen, M. van A1 - Vliet, F. F. van T1 - GaN-HEMT VSWR Ruggedness and Amplifier Protection Y1 - 2010 ER - TY - CHAP A1 - Rudolph, Matthias A1 - Mostardinha, H. A1 - Cabral, P. M. A1 - Carvalho, N. B. A1 - Kurpas, Paul A1 - Würfl, Joachim A1 - Pinto, J. C. A1 - Barnes, J. A1 - Garat, F. T1 - GaN RF Oscillator Used in Space Applications Y1 - 2010 U6 - https://doi.org/http://dx.doi.org/10.1109/INMMIC.2010.5480142 ER - TY - CHAP A1 - Rudolph, Matthias A1 - Heinrich, Wolfgang T1 - Assessment of power-transistor package models: distributed versus lumped approach Y1 - 2010 ER - TY - GEN A1 - Rudolph, Matthias A1 - Heymann, Peter A1 - Boss, Hermann T1 - Impact of Receiver Bandwidth and Nonlinearity on Noise Measurement Methods Y1 - 2010 U6 - https://doi.org/http://dx.doi.org/10.1109/MMM.2010.937715 ER - TY - CHAP A1 - Rudolph, Matthias T1 - Noise modeling of GaAs HBTs N2 - Institutskolloquium, IHP Frankfurt (Oder), 2010 Y1 - 2010 ER - TY - CHAP A1 - Rudolph, Matthias T1 - Highly Robust GaN-Based Low-noise Amplifiers N2 - Institutskolloquium, TU Darmstadt, Fachgebiet Mikrowellentechnik, Darmstadt, 2010 Y1 - 2010 ER - TY - BOOK A1 - Rudolph, Matthias T1 - Selected Topics on Microwave Measurements, Noise in Devices and Großsignalmodell für GaAs Hetero-Bipolar-Transistoren fürLeistungsanwendungen in der Mobilkommunikation Y1 - 2002 SN - 3-89825-392-9 ER - TY - CHAP A1 - Rudolph, Matthias A1 - Heymann, Peter T1 - The Influence of Microwave Two-Port Noise on Residual Phase Noise in GaAs-HBTs Y1 - 2004 ER - TY - CHAP A1 - Rudolph, Matthias A1 - Meliani, Chafik A1 - Heinrich, Wolfgang T1 - On-Chip GaAs-HBT Broadband-Coupled High-Bitrate Modulator Driver TWAs Y1 - 2005 ER - TY - CHAP A1 - Rudolph, Matthias A1 - Lenk, Friedrich A1 - Dörner, Ralf A1 - Heymann, Peter T1 - Influence of 2 GHz Harmonic Load-Pull on HBT and MESFET Output Power and Efficiency T2 - 1999 IEEE MTT-S International Microwave Symposium digest, June 13 - 19, 1999, Anaheim Convention Center, Anaheim, California Y1 - 1999 SN - 0-7803-5135-5 SP - 741 EP - 744 PB - Piscataway, NJ CY - IEEE ER - TY - CHAP A1 - Rudolph, Matthias A1 - Dörner, Ralf A1 - Heymann, Peter A1 - Lenk, Friedrich T1 - Modeling of Low-Frequency Noise in GaInP/GaAs Hetero-Bipolar-Transistors T2 - 2001 IEEE MTT-S International Microwave Symposium digest, May 20 - 25, 2001, Phoenix Civic Plaza, Phoenix, AZ, 1967 - 1970, Vol.3 Y1 - 2001 SN - 0-7803-6538-0 SP - 1967 EP - 1970 PB - IEEE Service Center CY - Piscataway, NJ ER - TY - CHAP A1 - Lenk, Friedrich A1 - Rudolph, Matthias T1 - New Extraction Algorithm for GaAs-HBTs With Low Intrinsic Base Resistance T2 - IEEE MTT-S International Microwave Symposium digest, June 2 - 7, 2002, Washington State Convention & Trade Center, Seattle, Washington, Vol. 2 Y1 - 2002 SN - 0-7803-7239-5 SP - 725 EP - 728 PB - IEEE Service Center CY - Piscataway, NJ ER - TY - CHAP A1 - Rudolph, Matthias A1 - Lenk, Friedrich A1 - Dörner, Ralf A1 - Heymann, Peter T1 - Towards a Unified Method to Implement Transit-Time Effects in Pi-Topology HBT CompactModels T2 - IEEE MTT-S International Microwave Symposium digest, June 2 - 7, 2002, Washington State Convention & Trade Center, Seattle, Washington, Vol. 2 Y1 - 2002 SN - 0-7803-7239-5 SP - 997 EP - 1000 PB - IEEE Service Center CY - Piscataway, NJ ER - TY - GEN A1 - Rudolph, Matthias A1 - Lenk, Friedrich A1 - Llopis, O. A1 - Heinrich, Wolfgang T1 - On the Simulation of Low-Frequency Noise Upconversion in InGaP/GaAs HBTs T2 - IEEE transactions on microwave theory and techniques Y1 - 2006 SN - 0018-9480 VL - 54 IS - 7 SP - 2954 EP - 2961 ER - TY - GEN A1 - Rudolph, Matthias A1 - Bonani, Fabrizio T1 - Low-Frequency Noise in Nonlinear Systems: Its Impact on RF Performance and Implicationsfor Device Modeling and Circuit Simulation Y1 - 2009 ER - TY - GEN A1 - Rudolph, Matthias A1 - Chaturvedi, Nidhi A1 - Hirche, Klaus A1 - Wurfl, K. A1 - Heinrich, Wolfgang A1 - Tränkle, Günther T1 - Highly Rugged 30 GHz GaN Low-Noise Amplifiers Y1 - 2009 ER - TY - GEN A1 - Rudolph, Matthias A1 - Kraemer, Tomas A1 - Schmückle, Franz-Josef A1 - Würfl, Joachim A1 - Tränkle, Günther T1 - InP DHBT Process in Transferred Substrate Technology with ft and fmax over 400 GHz Y1 - 2009 ER - TY - GEN A1 - Rudolph, Matthias A1 - Dewitz, Mike A1 - Liero, Armin A1 - Khalil, I. A1 - Chaturvedi, Nidhi A1 - Wipf, Christian A1 - Bertenburg, R. M. A1 - Miller, J. A1 - Würfl, Joachim A1 - Heinrich, Wolfgang A1 - Tränkle, Günther T1 - Highly Robust X-Band LNA with Extremely Short Recovery Time Y1 - 2009 ER - TY - CHAP A1 - Rudolph, Matthias A1 - Dörner, Ralf A1 - Klapproth, L. A1 - Heymann, Peter T1 - New Algorithm for Extraction of FET Noise Model Parameters Y1 - 1998 ER - TY - CHAP A1 - Rudolph, Matthias A1 - Dörner, Ralf A1 - Heymann, Peter T1 - New GaInP/GaAs-HBT Large-Signal Model for Power Applications Y1 - 1998 ER - TY - CHAP A1 - Rudolph, Matthias A1 - Meliani, Chafik A1 - Hilsenbeck, Jochen A1 - Heinrich, Wolfgang T1 - A GaAs-HBT Distributed Amplifier with Near-fT Cut-off Frequency for High-Bitrate Transmissions Y1 - 2004 ER - TY - CHAP A1 - Rudolph, Matthias A1 - Schnieder, Frank A1 - Heinrich, Wolfgang A1 - Schnieder, Frank T1 - Investigation of Thermal Crunching Effects in Fishbone-Type Layout Power GaAs-HBTs Y1 - 2004 ER - TY - CHAP A1 - Rudolph, Matthias A1 - Engelmann, Jens A1 - Schmückle, Franz-Josef ED - Rudolph, Matthias ED - Root, David E. ED - Fager, Christian T1 - Large and packaged Transistors T2 - Nonlinear Transistor Model Parameter Extraction Techniques Y1 - 2011 SN - 978-0-521-76210-6 SP - 171 EP - 205 PB - Cambridge University Press CY - Cambridge ER - TY - CHAP A1 - Rudolph, Matthias A1 - Schnieder, Frank A1 - Schmückle, Franz-Josef A1 - Heinrich, Wolfgang T1 - An Analysis of Source Connections in GaN Power Transistor Packages T2 - Proceedings, Microwave Conference (GeMiC), 2012 The 7th in Ilmenau, Germany Y1 - 2012 SN - 978-3-9812668-4-9 CY - Ilmenau ER - TY - CHAP A1 - Rudolph, Matthias ED - Rudolph, Matthias ED - Fager, Christian ED - Root, David E. T1 - Introduction T2 - Nonlinear transistor model parameter extraction techniques Y1 - 2012 SN - 978-0-521-76210-6 SP - 1 EP - 17 PB - Cambridge University Press CY - Cambridge ER - TY - CHAP A1 - Rudolph, Matthias A1 - Dörner, Ralf A1 - Ngnintedem, Eric A1 - Heinrich, Wolfgang T1 - Noise Modeling of GaN HEMT Devices T2 - Microwave Integrated Circuits Conference (EuMIC), 2012 7th European , Amsterdam Y1 - 2012 UR - http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=6476772 SN - 978-1-4673-2302-4 SN - 978-2-87487-026-2 SP - 159 EP - 162 PB - IEEE CY - Piscataway, NJ ER - TY - CHAP A1 - Andrei, Cristina A1 - Dörner, Ralf A1 - Bengtsson, Olof A1 - Chevtchenko, Serguei A. A1 - Heinrich, Wolfgang A1 - Rudolph, Matthias T1 - Highly Linear X-Band GaN-Based Low-Noise Amplifier T2 - Signals, Systems, and Electronics (ISSSE), 2012 International Symposium on , Potsdam Y1 - 2012 UR - http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=6362332 SN - 978-1-4673-4454-8 SN - 978-1-4673-4453-1 PB - IEEE CY - Piscataway, NJ ER - TY - GEN A1 - Schnieder, Frank A1 - Bengtsson, Olof A1 - Schmückle, Franz-Josef A1 - Rudolph, Matthias A1 - Heinrich, Wolfgang T1 - Simulation of RF Power Distribution in a Packaged GaN Power Transistor Using an Electro-Thermal Large-Signal Description T2 - IEEE transactions on microwave theory and techniques Y1 - 2013 U6 - https://doi.org/10.1109/TMTT.2013.2261089 SN - 0018-9480 VL - 61 IS - 7 SP - 2603 EP - 2609 ER - TY - GEN A1 - Schnieder, Frank A1 - Rudolph, Matthias T1 - Thermal Coupling in AlGaN/GaN Power Transistors T2 - Frequenz Y1 - 2013 U6 - https://doi.org/10.1515/freq-2012-0031 SN - 2191-6349 SN - 0016-1136 VL - 67 IS - 1-2 SP - 21 EP - 26 ER - TY - GEN A1 - Johansen, Tom K. A1 - Rudolph, Matthias A1 - Jensen, Thomas A1 - Kraemer, Tomas A1 - Weimann, Nils A1 - Schnieder, Frank A1 - Krozer, Viktor A1 - Heinrich, Wolfgang T1 - Small- and large-signal modeling of InP HBTs in transferred-substrate technology T2 - International Journal of Microwave and Wireless Technologies Y1 - 2014 U6 - https://doi.org/10.1017/S1759078714000051 VL - 6 IS - 3-4 SP - 243 EP - 251 ER - TY - GEN A1 - Apte, Anisha M. A1 - Poddar, Ajay K. A1 - Rudolph, Matthias A1 - Rohde, Ulrich L. T1 - A Novel Low Phase Noise X-Band Oscillator T2 - IEEE Microwave Magazine Y1 - 2015 U6 - https://doi.org/10.1109/MMM.2014.2367957 SN - 1527-3342 VL - 16 IS - 1 SP - 127 EP - 135 ER - TY - GEN A1 - Rudolph, Matthias A1 - Escotte, Laurent A1 - Dörner, Ralf T1 - Modeling Nonlinear White Noise in GaN HEMT Devices T2 - Frequenz Y1 - 2015 VL - 69 IS - 1-2 SP - 47 EP - 55 ER - TY - GEN A1 - Nosaeva, Ksenia A1 - Weimann, Nils A1 - Rudolph, Matthias A1 - John, Wilfred A1 - Krüger, Olaf A1 - Heinrich, Wolfgang T1 - Improved thermal management of InP transistors in transferred-substrate technology with diamond heat-spreading layer T2 - Electronics Letters Y1 - 2015 U6 - https://doi.org/10.1049/el.2015.1135 SN - 1350-911X VL - 51 IS - 13 SP - 1010 EP - 1012 ER - TY - GEN A1 - Nosaeva, Ksenia A1 - Weimann, Nils A1 - Rudolph, Matthias A1 - John, Wilfred A1 - Krüger, Olaf A1 - Heinrich, Wolfgang T1 - Thin ice: Diamond films could more than double the power output achievable with transistors in the ‘Terahertz gap’ by improving thermal management T2 - Electronics Letters Y1 - 2015 U6 - https://doi.org/10.1049/el.2015.1943 SN - 1350-911X VL - 51 IS - 13 SP - S. 959 ER - TY - CHAP A1 - Luo, Peng A1 - Bengtsson, Olof A1 - Rudolph, Matthias T1 - Reliable GaN HEMT Modeling Based on Chalmers Model and Pulsed S-Parameter Measurements T2 - 2016 German Microwave Conference, March 14-16, 2016 Bochum, Germany Y1 - 2016 SN - 978-3-9812668-7-0 U6 - https://doi.org/10.1109/GEMIC.2016.7461650 SP - 441 EP - 444 PB - IEEE CY - Piscataway, NJ ER - TY - GEN A1 - Nosaeva, Ksenia A1 - Al-Sawaf, Thualfiqa A1 - John, Wilfred A1 - Stoppel, Dimitri A1 - Rudolph, Matthias A1 - Schmückle, Franz-Josef A1 - Janke, Bernd A1 - Krüger, Olaf A1 - Krozer, Viktor A1 - Heinrich, Wolfgang A1 - Weimann, Nils T1 - Multifinger Indium Phosphide Double-Heterostructure Transistor Circuit Technology With Integrated Diamond Heat Sink Layer T2 - IEEE Transactions on Electron Devices Y1 - 2016 U6 - https://doi.org/10.1109/TED.2016.2533669 SN - 0018-9383 SN - 1557-9646 VL - 63 IS - 5 SP - 1846 EP - 1852 ER - TY - CHAP A1 - Luo, Peng A1 - Bengtsson, Olof A1 - Rudolph, Matthias T1 - Novel Approach to Trapping Effect Modeling based on Chalmers Model and Pulsed S-Parameter Measurements T2 - 2016 11th European Microwave Integrated Circuits Conference : 3-4 October 2016, London, UK Y1 - 2016 SN - 978-2-87487-044-6 SN - 978-1-4673-9009-5 U6 - https://doi.org/10.1109/EuMIC.2016.7777514 SP - 157 EP - 160 PB - IEEE CY - Piscataway, NJ ER - TY - GEN A1 - Apte, Anisha M. A1 - Rohde, Ulrich L. A1 - Poddar, Ajay K. A1 - Rudolph, Matthias T1 - Optimizing Phase-Noise Performance: Theory and Design Techniques for a Crystal Oscillator T2 - IEEE Microwave Magazine Y1 - 2017 U6 - https://doi.org/10.1109/MMM.2017.2679998 SN - 1527-3342 VL - 18 IS - 4 SP - 108 EP - 123 ER - TY - GEN A1 - Luo, Peng A1 - Schnieder, Frank A1 - Bengtsson, Olof A1 - Vadalà, Valeria A1 - Raffo, Antonio A1 - Heinrich, Wolfgang A1 - Rudolph, Matthias T1 - A streamlined drain-lag model for GaN HEMTs based on pulsed S-parameter measurements T2 - International Journal of Microwave and Wireless Technologies Y1 - 2019 U6 - https://doi.org/10.1017/S1759078719000060 SN - 1759-0787 SN - 1759-0795 VL - 11 IS - 2 SP - 121 EP - 129 ER - TY - GEN A1 - Nasser, Caram A1 - Luo, Peng A1 - Schnieder, Frank A1 - Rudolph, Matthias A1 - Ritter, Dan T1 - Simulation of the RF Power Performance of a GaN HFET and Comparison to Experiment T2 - IEEE Transactions on Electron Devices Y1 - 2019 U6 - https://doi.org/10.1109/TED.2019.2907484 SN - 0018-9383 SN - 1557-9646 VL - 66 IS - 5 SP - 2146 EP - 2150 ER - TY - GEN A1 - Griebel, Wolfgang A1 - Rudolph, Matthias A1 - Rohde, Ulrich L. T1 - Added Noise in Oscillators Caused by the Transistor Base Emitter Breakdown Phenomenon T2 - IETE Journal of Research Y1 - 2020 U6 - https://doi.org/10.1080/03772063.2020.1847702 SN - 0974-780X SP - 1 EP - 11 ER - TY - GEN A1 - Andrei, Cristina A1 - Rudolph, Matthias T1 - Properties of GaN LNAs for Front-End Applications T2 - WFC Towards A One-Chip Solution for GaN Front-Ends, Microwave Symposiums, Boston, 2019 Y1 - 2019 UR - https://www.b-tu.de/en/endowed-chair-rf-and-microwave-techniques/publications/publications#c208430 ER - TY - GEN A1 - Le, Quang Huy A1 - Huynh, Dang Khoa A1 - Lehmann, Steffen A1 - Zhao, Zhixing A1 - Kämpfe, Thomas A1 - Rudolph, Matthias T1 - Empirical Large-Signal Medoling of mm-Wave FDSOI CMOS Based on Angelov Model T2 - IEEE Transactions on Electron Devices Y1 - 2021 U6 - https://doi.org/10.1109/TED.2021.3061318 SN - 1557-9646 SN - 0018-9383 VL - 68 IS - 4 SP - 1446 EP - 1453 ER - TY - GEN A1 - Krause, Sascha A1 - Michler, Fabian A1 - Kölpin, Alexander A1 - Rudolph, Matthias A1 - Heinrich, Wolfgang T1 - A Digital Correction Method for Increased Dynamic Range in Interferometric Six-Port Radars T2 - IEEE Microwave and Wireless Components Letters Y1 - 2021 U6 - https://doi.org/10.1109/LMWC.2021.3084338 SN - 1558-1764 SN - 1531-1309 VL - 31 IS - 8 SP - 997 EP - 1000 ER - TY - GEN A1 - Rudolph, Matthias A1 - Apte, Anisha M. T1 - Nonlinear Noise Modeling: Using Nonlinear Circuit Simulators to Simulate Noise in the Nonlinear Domain T2 - IEEE Microwave Magazine Y1 - 2021 U6 - https://doi.org/10.1109/MMM.2021.3069538 SN - 1557-9581 VL - 22 IS - 7 SP - 47 EP - 64 ER - TY - GEN A1 - Manchanda, Prabhav A1 - Okocha, Jonathan A1 - Rudolph, Matthias T1 - Improved Sensitivity of Zero Bias Diode Power Detectors using Impedance Tuners T2 - IEEE Microwaves, Antennas, and Propagation Conference (MAPCON) Y1 - 2022 SN - 978-1-6654-5203-8 SN - 978-1-6654-5204-5 U6 - https://doi.org/10.1109/MAPCON56011.2022.10047233 SP - 1261 EP - 1266 ER - TY - GEN A1 - Rao, Megha Krishnaji A1 - Dörner, Ralf A1 - Yazdani, Hossein A1 - Rudolph, Matthias T1 - GaN-HEMT Based Common-Gate LNA MMIC with Integrated Switch for Compact 5G Transceivers T2 - IEEE Microwaves, Antennas, and Propagation Conference (MAPCON) Y1 - 2022 SN - 978-1-6654-5203-8 SN - 978-1-6654-5204-5 U6 - https://doi.org/10.1109/MAPCON56011.2022.10047410 SP - 1104 EP - 1107 ER - TY - GEN A1 - Sriperumbuduri, Venkata Pawan A1 - Wenzel, Andreas A1 - Rudolph, Matthias T1 - Mathematical Analysis of Switching HBT Devices T2 - IEEE Microwaves, Antennas, and Propagation Conference (MAPCON), 12-16 December 2022, Bangalore, India Y1 - 2022 SN - 978-1-6654-5203-8 SN - 978-1-6654-5204-5 U6 - https://doi.org/10.1109/MAPCON56011.2022.10047449 SP - 827 EP - 831 ER - TY - GEN A1 - Beleniotis, Petros A1 - Schnieder, Frank A1 - Chevtchenko, Serguei A. A1 - Rudolph, Matthias T1 - Localization of Trapping Effects in GaN HEMTs with Pulsed S-parameters and Compact Models T2 - 17th European Microwave Integrated Circuits Conference (EuMIC) Y1 - 2022 SN - 978-2-87487-070-5 SN - 978-1-6654-5880-1 U6 - https://doi.org/10.23919/EuMIC54520.2022.9923511 SP - 149 EP - 152 ER - TY - GEN A1 - Kaule, Evelyne A1 - Yazdani, Hossein A1 - Rudolph, Matthias T1 - Highly Linear Concurrent Tri-Band GaN LNA MMIC for 0.8/1.8/3.6 GHz Applications T2 - 24th International Microwave and Radar Conference (MIKON) Y1 - 2022 SN - 978-83-956020-3-0 SN - 978-1-6654-1106-6 U6 - https://doi.org/10.23919/Mikon54314.2022.9924770 ER - TY - GEN A1 - Beleniotis, Petros A1 - Zervos, Christos A1 - Schnieder, Frank A1 - Rudolph, Matthias T1 - Dynamic RD Modeling by Exploiting Gate Current Dependency of Virtual Gate Effect T2 - 18th European Microwave Integrated Circuits Conference (EuMIC),18-19 September 2023, Berlin Y1 - 2023 SN - 978-2-87487-073-6 SN - 979-8-3503-4833-0 U6 - https://doi.org/10.23919/EuMIC58042.2023.10288955 SP - 1 EP - 4 ER - TY - GEN A1 - Rao, Megha Krishnaji A1 - Dörner, Ralf A1 - Chevtchenko, Serguei A. A1 - Haque, Sanaul A1 - Rudolph, Matthias T1 - Common-Gate LNA MMIC With Switching Feature Using GaN-HEMT for 5G RF Front-Ende T2 - IEEE Microwave and Wireless Technology Letters Y1 - 2023 U6 - https://doi.org/10.1109/LMWT.2023.3306177 SN - 2771-9588 SN - 2771-957X VL - 33 IS - 10 SP - 1446 EP - 1449 ER - TY - GEN A1 - Le, Quang Huy A1 - Huynh, Dang Khoa A1 - Lehmann, Steffen A1 - Zhao, Zhixing A1 - Schwan, Christoph T. A1 - Kämpfe, Thomas A1 - Rudolph, Matthias T1 - 22-nm FDSOI CMOS Noise Modeling and Anlaysis in mm-Wave Frequency Range T2 - 23rd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 22 February 2023, Las Vegas, NV, USA Y1 - 2023 SN - 978-1-6654-9319-2 SN - 978-1-6654-9320-8 U6 - https://doi.org/10.1109/SiRF56960.2023.10046210 SN - 2474-9761 SP - 31 EP - 33 ER - TY - CHAP A1 - Bonani, Fabrizio A1 - Rudolph, Matthias T1 - Simulating Noise in Nonlinear Circuits T2 - IEEE MTT-S International Microwave Symposium (IMS), 4-9 June 2017, Honololu, HI, USA, Workshop WSP: Recent Advances in Microwave Noise: from Device Modeling to Network Design and Characterization Y1 - 2017 UR - https://ims2017.org/technical-programs/filter/search/rudolph ER - TY - CHAP A1 - Luo, Peng A1 - Schnieder, Frank A1 - Rudolph, Matthias T1 - Chalmers GaN HEMT charge model revisited T2 - German Microwave Conference (GeMiC), 12-14 March 2018, Freiburg, Germany Y1 - 2018 SN - 978-3-9812668-8-7 U6 - https://doi.org/10.23919/GEMIC.2018.8335055 SP - 164 EP - 167 PB - IEEE CY - Piscataway, NJ ER - TY - CHAP A1 - Luo, Peng A1 - Schnieder, Frank A1 - Bengtsson, Olof A1 - Heinrich, Wolfgang A1 - Rudolph, Matthias T1 - Modeling the Virtual Gate Voltage in Dispersive GaN HEMTs T2 - IEEE/MTT-S International Microwave Symposium, 10-15 June 2018, Philadelphia, PA, USA Y1 - 2018 SN - 978-1-5386-5067-7 U6 - https://doi.org/10.1109/MWSYM.2018.8439389 SP - 728 EP - 731 PB - IEEE CY - Piscataway, NJ ER - TY - CHAP A1 - Nasser, Caram A1 - Ritter, Dan A1 - Rudolph, Matthias T1 - Bias dependence of the access resistance in GaN HEMTs T2 - 2018 22nd International Microwave and Radar Conference (MIKON), Poznán, May 14-17, 2018, Poland Y1 - 2018 UR - https://ieeexplore.ieee.org/document/8405197 SN - 978-83-949421-1-3 U6 - https://doi.org/10.23919/MIKON.2018.8405197 SP - 271 EP - 273 PB - IEEE CY - Piscataway, NJ ER - TY - GEN A1 - Haque, Sanaul A1 - Andrei, Cristina A1 - Yazdani, Hossein A1 - Rudolph, Matthias T1 - On the Survivability of a 28 - 32 GHz GaN Low Noise Amplifier T2 - 18th European Microwave Integrated Circuits Conference (EuMIC), 18-19 September 2023, Berlin Y1 - 2023 SN - 978-2-87487-073-6 SN - 979-8-3503-4833-0 U6 - https://doi.org/10.23919/EuMIC58042.2023.10288728 ER - TY - CHAP A1 - Andrei, Cristina A1 - Dörner, Ralf A1 - Chevtchenko, Serguei A. A1 - Heinrich, Wolfgang A1 - Rudolph, Matthias T1 - On the Optimization of GaN HEMT Layout for Highly Rugged Low-Noise Amplifier Design T2 - 12th European Microwave Integrated Circuits Conference (EuMIC), 8-10 Oct. 2017, Nuremberg, Germany Y1 - 2017 SN - 978-2-87487-048-4 U6 - https://doi.org/10.23919/EuMIC.2017.8230705 SP - 244 EP - 247 PB - IEEE CY - Piscataway, NJ ER - TY - CHAP A1 - Kaule, Evelyne A1 - Dörner, Ralf A1 - Weimann, Nils A1 - Rudolph, Matthias T1 - Noise modeling of transferred-substrate InP-DHBTs T2 - IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems (COMCAS), 13-15 Nov. 2017, Tel-Aviv, Israel 2017 Y1 - 2017 SN - 978-1-5386-3169-0 U6 - https://doi.org/10.1109/COMCAS.2017.8244768 SP - 1 EP - 4 PB - IEEE CY - Piscataway, NJ ER - TY - CHAP A1 - Luo, Peng A1 - Bengtsson, Olof A1 - Rudolph, Matthias T1 - A Drain Lag Model for GaN HEMT based on Chalmers Model and Pulsed S-Parameter Measurements T2 - IEEE MTT-S International Microwave Symposium (IMS), 4-9 June 2017, Honololu, HI, USA Y1 - 2017 SN - 978-1-5090-6360-4 U6 - https://doi.org/10.1109/MWSYM.2017.8059085 SP - 240 EP - 243 PB - IEEE CY - Piscataway, NJ ER - TY - CHAP A1 - Rudolph, Matthias A1 - Andrei, Cristina A1 - Dörner, Ralf A1 - Chevtchenko, Serguei A. A1 - Heinrich, Wolfgang T1 - Noise in GaN HEMTs and Circuits T2 - 24th International Conference on Noise and Fluctuations (ICNF), Vilnius, Lithuania, June 20-23, 2017 Y1 - 2017 SN - 978-1-5090-2760-6 U6 - https://doi.org/10.1109/ICNF.2017.7985978 SP - 1 EP - 4 PB - IEEE CY - Piscataway, NJ ER - TY - CHAP A1 - Rudolph, Matthias T1 - GaN HEMTs for low-noise amplification — status and challenges T2 - Integrated Nonlinear Microwave and Millimetre-wave Circuits Workshop (INMMiC), 20-21 April 2017, Graz, Austria Y1 - 2017 SN - 978-1-5090-5862-4 U6 - https://doi.org/10.1109/INMMIC.2017.7927327 PB - IEEE CY - Piscataway, NJ ER - TY - CHAP A1 - Andrei, Cristina A1 - Bengtsson, Olof A1 - Dörner, Ralf A1 - Chevtchenko, Serguei A. A1 - Rudolph, Matthias T1 - Robust Stacked GaN-Based Low-Noise Amplifier MMIC for Receiver Applications T2 - IEEE MTT-S International Microwave Symposium (IMS), 17-22 May 2015 Y1 - 2015 U6 - https://doi.org/10.1109/MWSYM.2015.7166766 PB - IEEE ER - TY - CHAP A1 - Koloska, Uwe A1 - Wolff, Matthias A1 - Rudolph, Torsten ED - Mehnert, Dieter T1 - Ein Werkzeug zur automatischen Inventargenerierung T2 - Elektronische Sprachsignalverarbeitung, Tagungsband der zehnten Konferenz, Görlitz, 20. bis 22. September 1999 Y1 - 1999 SN - 3-933592-64-X SP - 160 EP - 165 PB - w.e.b. Universitätsverlag CY - Dresden ER - TY - CHAP A1 - Rudolph, Matthias A1 - Dörner, Ralf T1 - Towards a Large-Signal Noise Model for GaN HEMT Devices T2 - Microwave Integrated Circuits Conference (EuMIC), 2013, 8th European, 6–8 October 2013 Nuremberg, Germany Y1 - 2013 SP - 484 EP - 487 PB - IEEE CY - Piscataway, NJ ER - TY - CHAP A1 - Andrei, Cristina A1 - Bengtsson, Olof A1 - Dörner, Ralf A1 - Chevtchenko, Serguei A. A1 - Heinrich, Wolfgang A1 - Rudolph, Matthias T1 - Dynamic behaviour of a Low-Noise Amplifier GaN MMIC under input power overdrive T2 - Proceedings of 45th European Microwave Conference, Paris 2015 Y1 - 2015 U6 - https://doi.org/10.1109/EuMC.2015.7345742 SP - 231 EP - 234 PB - IEEE ER - TY - CHAP A1 - Rudolph, Matthias A1 - Escotte, Laurent A1 - Dörner, Ralf T1 - GaN HEMT Noise Model Performance under Nonlinear Operation T2 - Proceedings, 44th European Microwave Conference Y1 - 2014 SN - 978-2-87487-035-4 U6 - https://doi.org/10.1109/EuMC.2014.6986711 SP - 1416 EP - 1419 PB - IEEE ER - TY - CHAP A1 - Rudolph, Matthias A1 - Escotte, Laurent A1 - Dörner, Ralf T1 - GaN HEMT Noise Model Performance under Nonlinear Operation T2 - Proceedings, 9th European Microwave Integrated Circuit Conference (EuMIC) Y1 - 2014 U6 - https://doi.org/10.1109/EuMIC.2014.6997895 SP - 472 EP - 475 PB - IEEE ER - TY - CHAP A1 - Rudolph, Matthias A1 - Dörner, Ralf T1 - Bias-Dependent Pospieszalski Noise Model for GaN HEMT Devices T2 - GeMiC 2014, German Microwave Conference 2014, March 10 - 12, 2014, Aachen, Germany Y1 - 2014 UR - http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=6775103&isnumber=6775099 SN - 978-3-8007-3585-3 PB - VDE-Verl. CY - Berlin [u.a.] ER - TY - CHAP A1 - Rudolph, Matthias ED - Hartnagel, Hans L. ED - Quay, Rüdiger ED - Rohde, Ulrich L. ED - Rudolph, Matthias T1 - Interference and Noise T2 - Fundamentals of RF and Microwave Techniques and Technologies Y1 - 2023 SN - 978-3-030-94098-0 U6 - https://doi.org/10.1007/978-3-030-94100-0_8 SP - 747 EP - 791 PB - Springer CY - Cham ER - TY - CHAP A1 - Rudolph, Matthias ED - Hartnagel, Hans L. ED - Quay, Rüdiger ED - Rohde, Ulrich L. ED - Rudolph, Matthias T1 - Properties of Coaxial Cables and Transmission Lines, Directional Couplers and RF Filters T2 - Fundamentals of RF and Microwave Techniques and Technologies Y1 - 2023 SN - 978-3-030-94098-0 U6 - https://doi.org/10.1007/978-3-030-94100-0_4 SP - 197 EP - 333 PB - Springer CY - Cham ER - TY - CHAP A1 - Rudolph, Matthias ED - Hartnagel, Hans L. ED - Quay, Rüdiger ED - Rohde, Ulrich L. ED - Rudolph, Matthias T1 - Wave Propagation on Transmission Lines and Cables T2 - Fundamentals of RF and Microwave Techniques and Technologies Y1 - 2023 SN - 978-3-030-94098-0 U6 - https://doi.org/10.1007/978-3-030-94100-0_2 SP - 55 EP - 142 PB - Springer CY - Cham ER - TY - GEN A1 - Huynh, Dang Khoa A1 - Le, Quang Huy A1 - Lehmann, Steffen A1 - Zhao, Zhixing A1 - Bossu, Germain A1 - Arfaoui, Wafa A1 - Wang, Defu A1 - Kämpfe, Thomas A1 - Rudolph, Matthias T1 - Analysis of RF Stress Influence on Large-Signal Performance of 22nm FDSOI CMOS Transistors utilizing Waveform Measurement T2 - 16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, United Kingdom Y1 - 2022 SN - 978-2-87487-064-4 SN - 978-1-6654-4722-5 U6 - https://doi.org/10.23919/EuMIC50153.2022.9783930 SP - 382 EP - 385 ER - TY - GEN A1 - Beleniotis, Petros A1 - Schnieder, Frank A1 - Krause, Sascha A1 - Haque, Sanaul A1 - Rudolph, Matthias T1 - An efficient drain-lag model for microwave GaN HEMTs based on ASM-HEMT T2 - International Journal of Microwave and Wireless Technologie Y1 - 2022 U6 - https://doi.org/10.1017/S1759078721001483 SN - 1759-0795 VL - 14 IS - 2 SP - 134 EP - 142 ER - TY - GEN A1 - Krause, Sascha A1 - Zervos, Christos A1 - Beleniotis, Petros A1 - Ritter, Dan A1 - Rudolph, Matthias A1 - Heinrich, Wolfgang T1 - On the Influence of Transistor Dimensions on the Dispersive Behavior in A1GaN/GaN HEMT-Based PAs and Robust LNAs T2 - IEEE/MTT-S International Microwave Symposium - IMS 2022, 19-24 June 2022 Denver, CO, USA Y1 - 2022 SN - 978-1-6654-9613-1 SN - 978-1-6654-9614-8 U6 - https://doi.org/10.1109/IMS37962.2022.9865474 SP - 914 EP - 917 PB - IEEE CY - Piscataway ER - TY - CHAP A1 - Rudolph, Matthias A1 - Dörner, Ralf A1 - Heymann, Peter T1 - A Universal Measurement System for Microwave Power Transistors Y1 - 1999 ER - TY - CHAP A1 - Rudolph, Matthias A1 - Dörner, Ralf A1 - Heymann, Peter A1 - Richter, E. T1 - Scaling of GaInP/GaAs HBT Equivalent-Circuit Elements Y1 - 1999 ER - TY - CHAP A1 - Rudolph, Matthias A1 - Kurpas, Paul A1 - Brunner, F. A1 - Doser, W. A1 - Maaßdorf, Andre A1 - Dörner, Ralf A1 - Blanck, H. A1 - Heinrich, Wolfgang A1 - Würfl, Joachim T1 - Development and Characterization of GaInP/GaAs HBTs for High Voltage Operation Y1 - 2001 ER - TY - CHAP A1 - Rudolph, Matthias A1 - Dörner, Ralf A1 - Heymann, Peter T1 - Multiharmonic Generator for On-Wafer Phase Calibration of Non-Linear Network Analyzer Y1 - 2001 ER - TY - CHAP A1 - Rudolph, Matthias A1 - Meliani, Chafik A1 - Hilsenbeck, Jochen A1 - Heinrich, Wolfgang A1 - Meliani, Chafik T1 - A 40 Gbps Broadband Amplifier for Modulator-Driver Applications Using a GaAs HBT Technology Y1 - 2004 ER - TY - CHAP A1 - Rudolph, Matthias A1 - Dörner, Ralf T1 - Key Issues of Compact Models for GaAs Heterojunction Bipolar Transistors Y1 - 2004 ER - TY - GEN A1 - Le, Quang Huy A1 - Huynh, Dang Khoa A1 - Wang, D. A1 - Zhao, Zhixing A1 - Lehmann, Steffen A1 - Kämpfe, Thomas A1 - Rudolph, Matthias T1 - W-Band Noise Characterization with Back-Gate Effects for Advanced 22nm FDSOI mm-Wave MOSFETs T2 - 2020 IEEE Radio Frequency Integrated Circuits Symposium (RFIC). 4-6 Aug. 2020, Los Angeles, CA, USA Y1 - 2020 SN - 978-1-7281-6809-8 SN - 978-1-7281-6810-4 U6 - https://doi.org/10.1109/RFIC49505.2020.9218369 SN - 2375-0995 SN - 1529-2517 SP - 131 EP - 134 ER - TY - GEN A1 - Kaule, Evelyne A1 - Dörner, Ralf A1 - Weimann, Nils A1 - Rudolph, Matthias T1 - Modeling the Noise of Transferred-Substrate InP DHBTs at Highest Frequencies T2 - 2020 German Microwave Conference (GeMiC), 09-11 March 2020 , Cottbus Y1 - 2020 UR - https://ieeexplore.ieee.org/document/9080188 SN - 978-3-9820-3971-8 SN - 978-1-7281-4206-7 SN - 2167-8022 SP - 52 EP - 55 ER - TY - GEN A1 - Shivan, T. A1 - Kaule, Evelyne A1 - Hossain, M. A1 - Dörner, Ralf A1 - Johansen, Tom K. A1 - Stoppel, Dimitri A1 - Boppel, S. A1 - Heinrich, Wolfgang A1 - Krozer, Viktor A1 - Rudolph, Matthias T1 - Design and modeling of a ultra-wideband low-noise distributend amplifier in InP DHBT technology T2 - International Journal of Microwave and Wireless Technologies Y1 - 2019 U6 - https://doi.org/10.1017/S1759078719000515 SN - 1759-0795 N1 - MIKON 2018 / EuMW 2018 (Part II) VL - 11 IS - 7 SP - 635 EP - 644 ER - TY - GEN A1 - Le, Quang Huy A1 - Huynh, Dang Khoa A1 - Wang, Defu A1 - Kämpfe, Thomas A1 - Rudolph, Matthias T1 - Small-Signal Modelling of mm-Wave MOSFET up to 110 GHz in 22nm FDSOI Technology T2 - Proceedings of the 2019 IEEE Asia-Pacific Microwave Conference (APMC) : 10-13 December 2019, Marina Bay Sands, Singapore Y1 - 2019 SN - 978-1-7281-3517-5 U6 - https://doi.org/10.1109/APMC46564.2019.9038620 SP - 222 EP - 224 PB - IEEE CY - Piscataway, NJ ER - TY - GEN A1 - Kaule, Evelyne A1 - Luo, Peng A1 - Chevtchenko, Serguei A. A1 - Rudolph, Matthias A1 - Andrei, Cristina T1 - Compact Stacked Rugged GaN Low-Noise Amplifier MMIC under Input Power Overdrive Condition T2 - 18th European Microwave Integrated Circuits Conference (EuMIC),18-19 September 2023, Berlin Y1 - 2023 SN - 978-2-87487-073-6 SN - 979-8-3503-4833-0 U6 - https://doi.org/10.23919/EuMIC58042.2023.10288650 SP - 9 EP - 12 ER - TY - GEN A1 - Zervos, Christos A1 - Beleniotis, Petros A1 - Krause, Sascha A1 - Ritter, Dan A1 - Rudolph, Matthias T1 - The role of gate leakage on surface-related current collapse in AlGaN/GaN HEMTs T2 - 18th European Microwave Integrated Circuits Conference (EuMIC), 18-19 September 2023, Berlin Y1 - 2023 SN - 978-2-87487-073-6 SN - 979-8-3503-4833-0 U6 - https://doi.org/10.23919/EuMIC58042.2023.10289036 VL - 2023 SP - 297 EP - 300 ER - TY - GEN A1 - Sriperumbuduri, Venkata Pawan A1 - Yacoub, Hady A1 - Wentzel, Andreas A1 - Johansen, Tom K. A1 - Rudolph, Matthias T1 - Design and Analysis of a 50GHz InP DHBT Class-E Power Amplifer Providing 2.3 T2 - 18th European Microwave Integrated Circuits Conference (EuMIC), 18-19 September 2023, Berlin Y1 - 2023 U6 - https://doi.org/10.23919/EuMIC58042.2023.10288688 ER - TY - GEN A1 - Huynh, Dang Khoa A1 - Le, Quang Huy A1 - Lehmann, Steffen A1 - Zhao, Zhixing A1 - Bossu, Germain A1 - Arfaoui, Wafa A1 - Kämpfe, Thomas A1 - Rudolph, Matthias T1 - Impact of Off-State Stress on SiGe-channel p-FETs in 22nm FDSOI under Large-Signal Operation T2 - 18th European Microwave Integrated Circuits Conference (EuMIC), 18-19 September 2023, Berlin Y1 - 2023 SN - 978-2-87487-073-6 SN - 979-8-3503-4833-0 U6 - https://doi.org/10.23919/EuMIC58042.2023.10288886 SP - 173 EP - 176 ER - TY - CHAP A1 - Lenk, Friedrich A1 - Dörner, Ralf A1 - Rumiantsev, Andrej A1 - Rudolph, Matthias T1 - Calibration Residual Error Propagation Analysis Using Conformal Mapping T2 - 77th ARFTG Microwave Measurement Conference (ARFTG 2011), Baltimore, Maryland, USA, 10 June 2011 Y1 - 2011 SN - 978-1-61284-959-1 PB - Piscataway, NJ CY - IEEE ER - TY - GEN A1 - Tomaz, Antonio A1 - Gerlich, Stefan A1 - Rudolph, Matthias A1 - Andrei, Cristina T1 - A Novel System for Recovery Time Measurements of GaN-Based Low-Noise Amplifiers T2 - 2022 14th German Microwave Conference (GeMiC), Ulm, 16-18 May 2022 N2 - A novel setup allowing for recovery time measurement of robust GaN LNA is presented in this paper. The setup is based on an PNA-X vector network analyzer and allows for the characterization of the LNA's small-signal gain, while it also monitors overdrive pulse power and reflected pulse power. The system setup and operation is shown in detail. As an example, two different GaN LNAs were measured in order to validate the test setup. Y1 - 2022 UR - https://ieeexplore.ieee.org/document/9783536 SN - 978-3-9820397-2-5 SN - 2167-8022 SP - 65 EP - 68 PB - IEEE ER - TY - GEN A1 - Sriperumbuduri, Venkata Pawan A1 - Yacoub, Hady A1 - Johansen, Tom K. A1 - Wentzel, Andreas A1 - Dörner, Ralf A1 - Rudolph, Matthias T1 - Modeling Base-Collector Heterojunction Barrier Effect in InP DHBTs for Improved Large Singal Performance T2 - 2021 IEEE/MTT-S International Microwave Symposium : June 2021, Atlanta, Georgia, USA/20-25 June 2021, virtual event Y1 - 2021 SN - 978-1-66540-307-8 SN - 978-1-66543-141-5 U6 - https://doi.org/10.1109/IMS19712.2021.9575019 SP - 355 EP - 357 PB - IEEE CY - Piscataway ER - TY - GEN A1 - Le, Quang Huy A1 - Huynh, Dang Khoa A1 - Nayak, Anurag A1 - Lehmann, Steffen A1 - Zhao, Zhixing A1 - Kämpfe, Thomas A1 - Rudolph, Matthias T1 - Large-Signal Medeling for Nonlinear Analysis of Experimental Devices in 22nm FDSOI Technology T2 - 16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, UK Y1 - 2022 SN - 978-2-87487-064-4 SN - 978-1-6654-4722-5 U6 - https://doi.org/10.23919/EuMIC50153.2022.9784055 SP - 17 EP - 20 ER - TY - GEN A1 - Beleniotis, Petros A1 - Chevtchenko, Serguei A. A1 - Rudolph, Matthias T1 - Statistical Medeling of GaN HEMTs by Direct Transfer of Veriations to Model Parameters T2 - 16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, United Kingdom Y1 - 2022 SN - 978-2-87487-064-4 SN - 978-1-6654-4722-5 U6 - https://doi.org/10.23919/EuMIC50153.2022.9783780 SP - 63 EP - 66 ER - TY - GEN A1 - Haque, Sanaul A1 - Schnieder, Frank A1 - Hilt, Oliver A1 - Dörner, Ralf A1 - Brunner, Frank A1 - Rudolph, Matthias T1 - Noise Medeling of GaN/AIN HEMT T2 - 16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, United Kingdom Y1 - 2022 SN - 978-2-87487-064-4 SN - 978-1-6654-4722-5 U6 - https://doi.org/10.23919/EuMIC50153.2022.9783992 SP - 185 EP - 188 ER - TY - GEN A1 - Le, Quang Huy A1 - Huynh, Dang Khoa A1 - Lehmann, Steffen A1 - Zhao, Zhixing A1 - Kämpfe, Thomas A1 - Rudolph, Matthias T1 - Analysis of the Relaxed Contacted-Poly-Pitch Effect on the RF Performance of Strained-SiGe-Channel p-FETs in 22 nm FDSOI Technology T2 - 16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, United Kingdom Y1 - 2022 SN - 978-2-87487-064-4 SN - 978-1-6654-4722-5 U6 - https://doi.org/10.23919/EuMIC50153.2022.9783713 SP - 22 EP - 25 PB - IEEE ER - TY - GEN A1 - Shrestha, Amit A1 - Dörner, Ralf A1 - Yacoub, Hady A1 - Johansen, Tom K. A1 - Heinrich, Wolfgang A1 - Krozer, Viktor A1 - Rudolph, Matthias A1 - Wentzel, Andreas T1 - A 100 GHz Class-F-Like InP-DHBT PA with 25,4%PAE T2 - 16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, United Kingdom Y1 - 2022 SN - 978-2-87487-064-4 SN - 978-1-6654-4722-5 U6 - https://doi.org/10.23919/EuMIC50153.2022.9783638 SP - 225 EP - 228 ER - TY - GEN A1 - Kaule, Evelyne A1 - Andrei, Cristina A1 - Rudolph, Matthias T1 - Output Power Limited Rugged GaN LNA MMIC T2 - 16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, United Kingdom Y1 - 2022 SN - 978-2-87487-064-4 SN - 978-1-6654-4722-5 U6 - https://doi.org/10.23919/EUMIC50153.2022.9784020 SP - 133 EP - 135 ER - TY - GEN A1 - Huynh, Dang Khoa A1 - Le, Quang Huy A1 - Duhan, Pardeep A1 - Wang, Defu A1 - Kämpfe, Thomas A1 - Rudolph, Matthias T1 - Analysis of Hot-Carrier Degradation in 22nm FDSOI Transistors Using RF Small-Signal Characteristics T2 - 2020 German Microwave Conference (GeMiC), 09-11 March 2020, Cottbus, Germany Y1 - 2020 UR - https://ieeexplore.ieee.org/abstract/document/9080227 SN - 978-3-9820-3971-8 SN - 978-1-7281-4206-7 SN - 2167-8022 SP - 244 EP - 247 PB - IEEE CY - Piscataway ER - TY - GEN A1 - Erkelenz, Kevin A1 - Sriperumbuduri, Venkata Pawan A1 - Flisgen, Thomas A1 - Rudolph, Matthias A1 - Johansen, Tom K. A1 - Heinrich, Wolfgang A1 - Wentzel, Andreas T1 - Output Matching Network Design for Highly Efficient InP-DHBT W-Band PAs Utilizing a Defected Ground Structure T2 - 2020 German Microwave Conference (GeMiC), 09-11 March 2020, Cottbus, Germany Y1 - 2020 UR - https://ieeexplore.ieee.org/document/9080208 SN - 978-3-9820-3971-8 SN - 978-1-7281-4206-7 N1 - INSPEC Accession Number: 19575344 SP - 268 EP - 271 PB - IEEE ER - TY - BOOK A1 - Heymann, Peter A1 - Rudolph, Matthias T1 - A Guido to Noise in Microwave Circuits: Devices, Circuits and Measurement Y1 - 2021 SN - 978-1-119-85936-9 PB - IEEE Press [u.a.] CY - Piscataway, NJ ER - TY - GEN A1 - Krause, Sascha A1 - Beleniotis, Petros A1 - Bengtsson, Olof A1 - Rudolph, Matthias A1 - Heinrich, Wolfgang T1 - Characterization of the Impairment and Recovery of GaN-HEMTs in Low-Noise Amplifiers under Input Overdrive T2 - 2021 IEEE MTT-S International Microwave Symposium (IMS), 07-25 June 2021, Atlanta, GA, USA Y1 - 2021 SN - 978-1-6654-0307-8 SN - 978-1-6654-3141-5 U6 - https://doi.org/10.1109/IMS19712.2021.9574839 SN - 2576-7216 SN - 0149-645X SP - 515 EP - 518 ER - TY - GEN A1 - Beleniotis, Petros A1 - Schnieder, Frank A1 - Rudolph, Matthias T1 - Simulating Drain Lag of GaN HEMTs with physics-based ASM Model T2 - 2020 15th European Microwave Integrated Circuits Conference (EuMIC), 10-15 January 2021, Utrecht, Netherlands Y1 - 2021 UR - https://ieeexplore.ieee.org/document/9337389 SN - 978-2-87487-060-6 SN - 978-1-7281-7040-4 SP - 165 EP - 168 ER - TY - BOOK A1 - Vendelin, George D. A1 - Pavio, Anthony M. A1 - Rohde, Ulrich L. A1 - Rudolph, Matthias T1 - Microwave circuit design:using linear and nonlinear techniques Y1 - 2021 SN - 978-1-118-44975-2 SN - 978-1-119-74169-5 PB - Wiley CY - Hoboken, N.J. ET - Third edition ER - TY - GEN A1 - Kaule, Evelyne A1 - Andrei, Cristina A1 - Gerlich, Stefan A1 - Dörner, Ralf A1 - Rudolph, Matthias T1 - Limiting the Output Power of Rugged GaN LNAs T2 - 14th European Microwave Integrated Circuits Conference (EuMIC) N2 - Rugged GaN HEMT low-noise amplifiers are well established, but the common concept of achieving ruggedness by applying the gate supply voltage through a high ohmic resistance might not be sufficient in addition to control the maximum output power. This paper shifts the focus to the protection of subsequent stages and proposes a circuit concept based on an output attenuator and an adaptive drain supply. It is shown that the concept implementation provides an attenuation of up to 28dB under input overdrive condition while leaving small-signal noise Figure unaffected. KW - Power generation; Logic Gates; Gallium nitride; Attenuators; HEMTs; Printed circuits; Power measurement; Limit; GaN; HEMT; ruggedness; low noise amplifier (LNA); receiver Y1 - 2019 SN - 978-2-87487-056-9 SN - 978-1-7281-0768-4 U6 - https://doi.org/10.23919/EuMIC.2019.8909653 SP - 240 EP - 242 CY - Paris, France ER - TY - GEN A1 - Kaule, Evelyne A1 - Andrei, Cristina A1 - Gerlich, Stefan A1 - Dörner, Ralf A1 - Rudolph, Matthias T1 - Limiting the Output Power of Rugged GaN LNAs T2 - Proceedings of 49th European Microwave Conference (EuMC) N2 - Rugged GaN HEMT low-noise amplifiers are well established, but the common concept of achieving ruggedness by applying the gate supply voltage through a high ohmic resistance might not be sufficient in addition to control the maximum output power. This paper shifts the focus to the protection of subsequent stages and proposes a circuit concept based on an output attenuator and an adaptive drain supply. It is shown that the concept implementation provides an attenuation of up to 28 dB under input overdrive condition while leaving small-signal noise figure unaffected. KW - Power generation; Logic Gates; Gallium nitride; Attenuators; HEMTs; Printed circuits; Power measurement; Limit; GaN; HEMT; ruggedness; low noise amplifier (LNA); receiver Y1 - 2019 SN - 978-2-87487-055-2 SN - 978-1-7281-1798-0 U6 - https://doi.org/10.23919/EuMC.2019.8910675 SP - 794 EP - 796 CY - Paris, France ER - TY - JOUR A1 - Rudolph, Matthias A1 - Behtash, Reza A1 - Hirche, Klaus A1 - Würfl, Joachim A1 - Heinrich, Wolfgang A1 - Tränkle, Günther T1 - A Highly Survivable 3-7 GHz GaN Low-Noise Amplifier Y1 - 2006 ER - TY - GEN A1 - Rudolph, Matthias A1 - Achouche, M. A1 - Kraus, S. A1 - Spitzbart, Th. A1 - Kurpas, Paul A1 - Rentner, D. A1 - Brunner, F. A1 - Richter, E. A1 - Bergunde, T. A1 - Heymann, Peter A1 - Wolter, P. A1 - Wittrich, H. A1 - Weyers, M. A1 - Würfl, Joachim A1 - Tränkle, Günther T1 - InGaP/GaAs Power HBTs for L-Band Applications Y1 - 1999 ER - TY - GEN A1 - Rudolph, Matthias A1 - Meliani, Chafik A1 - Kurpas, Paul A1 - Schmidt, L. A1 - Rheinfelder, C. N. A1 - Heinrich, Wolfgang T1 - A 2.4 GHz GaAs-HBT Class-E MMIC Amplifier with 65% PAE Y1 - 2007 ER - TY - GEN A1 - Rudolph, Matthias A1 - Würfl, Joachim A1 - Kurpas, Paul A1 - Brunner, F. A1 - Mai, M. T1 - Degradation properties of MOVPE-grown GaInP/GaAs HBTs under combined temperatureand current stressing Y1 - 2001 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Beilenhoff, K. A1 - Dörner, Ralf A1 - Heymann, Peter T1 - Scalable GaInP/GaAs HBT Large-Signal Model Y1 - 2000 ER - TY - JOUR A1 - Rudolph, Matthias T1 - Limitations of Current Compact Transit-Time Models for III-V-Based HBTs Y1 - 2008 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Heymann, Peter T1 - On Compact HBT RF Noise Modeling Y1 - 2007 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Meliani, Chafik A1 - Heinrich, Wolfgang T1 - A 40 Gbps GaAs-HBT Distributed Amplifier with an Over-fT Cut-Off Frequency: Analyticaland Experimental Study Y1 - 2005 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Meliani, Chafik A1 - Dörner, Ralf A1 - Heinrich, Wolfgang T1 - Bandwidth Potential of HBT-Based TWAs as a Function of Transistor fmax/fT Ratio Y1 - 2008 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Tischler, Th. A1 - Kilk, A. A1 - Heinrich, Wolfgang T1 - Via Arrays for Grounding in Multilayer Packaging - Frequency Limits and Design Rules Y1 - 2003 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Rheinfelder, C. N. A1 - Beißwanger, F. A1 - Heinrich, Wolfgang T1 - Nonlinear Modeling of SiGe HBTs up to 50 GHz Y1 - 1997 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Dörner, Ralf A1 - Heymann, Peter T1 - GaAs HBT Operating as Integrated V- to W-Band Gunn Oscillator Y1 - 2002 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Schnieder, Frank A1 - Heinrich, Wolfgang T1 - Modeling Emitter Breakdown in GaAs-Based HBTs Y1 - 2002 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Dörner, Ralf T1 - Large-Signal Modeling of High-Voltage GaAs Power HBTs Y1 - 2005 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Dörner, Ralf T1 - Large-Signal HBT Model Requirements to Predict Nonlinear Behaviour Y1 - 2004 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Dörner, Ralf A1 - Heymann, Peter T1 - On the Gunn Effect in GaAs HBTs Y1 - 2001 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Sheinman, B. A1 - Wasige, E. A1 - Dörner, Ralf A1 - Sidorov, V. A1 - Cohen, S. A1 - Ritter, Dan T1 - A Peeling Algorithm for Extraction of the HBT Small-Signal Equivalent Circuit Y1 - 2002 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Behtash, Reza A1 - Dörner, Ralf A1 - Hirche, Klaus A1 - Wurfl, Joachim A1 - Heinrich, Wolfgang A1 - Tränkle, Günther T1 - Analysis of the Survivability of GaN Low-Noise Amplifiers Y1 - 2007 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Khalil, I. A1 - Liero, Armin A1 - Lossy, Richard A1 - Heinrich, Wolfgang T1 - GaN HEMT Potential for Low Noise Highly Linear RF Applications Y1 - 2008 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Dörner, Ralf A1 - Heymann, R. A1 - Klapproth, L. A1 - Böck, Georg T1 - Direct Extraction of FET Noise Models from Noise Figure Measurements Y1 - 2002 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Meliani, Chafik T1 - On the Correlation between Eye-Diagram and Frequency Characteristics of GaAs-HBT TWAsfor 20 and 40 Gbps NRZ Signals Y1 - 2006 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Korndörfer, Falk A1 - Heymann, Peter A1 - Heinrich, Wolfgang T1 - Compact Large-Signal Shot-Noise Model for HBTs Y1 - 2008 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Dörner, Ralf A1 - Heymann, R. A1 - Beilenhoff, K. T1 - Unified Model for Collector Charge in Heterojunction Bipolar Transistors Y1 - 2002 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Dörner, Ralf T1 - Consistent Modeling of Capacitances and Transit Times of GaAs-Based HBTs Y1 - 2005 ER - TY - JOUR A1 - Rudolph, Matthias T1 - Uniqueness Problems in Compact HBT Models Caused by Thermal Effects Y1 - 2004 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Dörner, Ralf A1 - Klapproth, L. A1 - Heymann, Peter A1 - Prinzler, H. A1 - Böck, Georg T1 - Experimental Evaluation of Microwave Field-EffectTransistor Noise Models Y1 - 1999 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Dörner, Ralf A1 - Heymann, Peter A1 - Beilenhoff, K. T1 - Scalable GaInP/GaAs HBT Large-Signal Model Y1 - 2000 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Dörner, Ralf A1 - Heymann, Peter T1 - Multiharmonic Generators for Relative Phase Calibration of Nonlinear Network Analyzers Y1 - 2001 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Dörner, Ralf A1 - Klapproth, L. A1 - Heymann, Peter T1 - An HBT Noise Model Valid up to Transit Frequency Y1 - 1999 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Dörner, Ralf A1 - Heymann, Peter T1 - Harmonic Tuning of Power Transistors by Active Load-Pull Measurement Y1 - 2000 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Dörner, Ralf A1 - Heymann, Peter T1 - Direct Extraction of HBT Equivalent Circuit Elements Y1 - 1999 ER - TY - GEN A1 - Rudolph, Matthias A1 - Dörner, Ralf T1 - Selected Topics on Microwave Measurements, Noise in Devices and Circuits, and TransistorModeling. A Festschrift for Peter Heymann Y1 - 2005 SN - 3-86537-328-3 ER - TY - BOOK A1 - Rohde, Ulrich L. A1 - Rudolph, Matthias T1 - RF/Microwave Circuit Design for Wireless Applications Y1 - 2012 SN - 978-0-470-90181-6 PB - Wiley CY - Hoboken, NJ ET - 2. ed. ER - TY - BOOK A1 - Rudolph, Matthias T1 - Introduction to Modeling HBTs Y1 - 2006 SN - 1-58053-144-X PB - Artech House CY - Boston, Mass. ER - TY - GEN A1 - Johansen, Tom K. A1 - Rudolph, Matthias A1 - Jensen, Thomas A1 - Kraemer, Tomas A1 - Weimann, Nils A1 - Schnieder, Frank A1 - Krozer, Viktor A1 - Heinrich, Wolfgang T1 - Modeling of InP HBTs in Transferred-Substrate Technology for Millimeter-Wave Applications T2 - Microwave Integrated Circuits Conference (EuMIC), 2013, 8th European, 6–8 October 2013 Nuremberg, Germany Y1 - 2013 SN - 978-2-87487-032-3 SP - 280 EP - 283 PB - IEEE CY - Piscataway, NJ ER -