TY - GEN A1 - Schmeißer, Dieter A1 - Haeberle, Jörg A1 - Barquinha, Pedro A1 - Gaspar, Diana A1 - Pereira, Luís A1 - Martins, Rodrigo A1 - Fortunato, Elvira T1 - Electronic structure of amorphous ZnO films T2 - Physica Status Solidi C N2 - We use resonant photoemission spectroscopy (resPES) to study the electronic properties of amorphous ZnO (a-ZnO) layers. We report on the core levels, the valence band (VB) PES data, and the X-ray absorption (XAS) data which we use for the conduction band (CB) density of states. From these results we are able to derive the partial density of states (pDOS) of O2p and Zn4s4p states in the VB and CB, respectively as well as a band scheme. At the O1s resonance we observe a band of localized defect states which is located between the Fermi energy and the CBM. At the Zn2p edge the XAS data indicate that localized Zn4s4p states are involved in the DOS starting already at the Fermi energy. KW - a-ZnO thin films KW - intrinsic defects KW - resonant PES KW - amorphous oxide semiconductors (AOS) KW - transparent conducting oxides (TCO) KW - charge transfer Y1 - 2014 U6 - https://doi.org/10.1002/pssc.201400010 SN - 1610-1642 VL - 11 IS - 9-10 SP - 1476 EP - 1480 ER -