TY - GEN A1 - Lorenz-Meyer, Nicolai A1 - Menzel, Robert A1 - Dadzis, Kaspars A1 - Nikiforova, Angelina A1 - Riemann, Helge T1 - Lumped Parameter Model for Silicon Crystal Growth from Granulate Crucible T2 - Crystal Research and Technology N2 - In the present paper, a lumped parameter model for the novel Silicon Granulate Crucible (SiGC) method is proposed, which is the basis for a future model-based control system for the process. The model is analytically deduced based on the hydromechanical, geometrical, and thermal conditions of the process. Experiments are conducted to identify unknown model parameters and to validate the model. The physical consistency of the model is verified using simulation studies and a prediction error of below 2% is reached. Y1 - 2020 UR - https://onlinelibrary.wiley.com/doi/10.1002/crat.202000044 U6 - https://doi.org/10.1002/crat.202000044 SN - 1521-4079 VL - 55 IS - 8 ER -