TY - CHAP A1 - Richter, Matthias A1 - Städter, Matthias A1 - Paloumpa, Ioanna A1 - Schmeißer, Dieter T1 - Multiple Auger Decay at resonant photo-excitation in carbon thin films T2 - Verhandlungen der Deutschen Physikalischen Gesellschaft N2 - We use resonant photoemission at the C1s edge to study the electronic structure of HOPG, graphene flakes and monolayer graphene. We find remarkable differences in the profile of the Auger decay channels, which we attribute to an additional multiple-Auger with a three-hole final state. A prerequisite for the appearance of this decay mechanism is the existence of localized excitonic states, which cause the appearance of the multiple Auger decay. Defects (pits, holes, steps and kinks) can act as localized excitonic states. We use those effects to identify the existence and the quantity of such defect states within the pi*-band regime in carbon thin films, because the intensity of the three-hole Auger decay is varying with the defect density of the carbon films. The defect-excitonic states can be either localized in the band-gap at the M-point or in case of surface defects like steps, kinks or pits even at the K-point by losing the pure sp2 character of the films. We find that the appearance of the multiple Auger decay is different for multilayer and monolayer graphene. In particular the interaction of impurities leads to broadening of the C1s core levels. The three-hole Auger decay spectroscopy is a new method to detect such contaminations with a high sensitivity. KW - resonant photoelectron spectroscopy KW - Auger decay KW - multiple decay KW - carbon thin films Y1 - 2013 UR - http://www.dpg-verhandlungen.de/year/2013/conference/regensburg/part/hl/session/52/contribution/6?lang=de PB - Deutsche Physikalische Gesellschaft CY - Bad Honnef ER - TY - CHAP A1 - Städter, Matthias A1 - Richter, Matthias A1 - Schmeißer, Dieter T1 - Fano-Profiles in HOPG and graphene flakes T2 - Verhandlungen der Deutschen Physikalischen Gesellschaft N2 - We investigated the electronic structure of the valence and conduction band of HOPG by 2D resonant photoemission spectroscopy. Our aim is to understand the electronic structure of defects and inhomogeneities in graphene and related materials in more detail. From our measurements we find that the transition from the sigma-band to the pi*-band at the M-point shows a characteristic Fano-Profile. A Fano-Profile occurs as the result of the interference of the band to band transition and a parallel transition to a discrete energy level within the band gap. The theory of Fano enables us to determine the energetic location of these discrete level. It is found to be several meV above the Fermi-Energy. Additional measurements on graphene flakes lead to similar results for the sigma- to pi*-band transition and the location of the discrete energy state. With this we not only can determine the energetic states of defects but also get a better understanding of the origin of the Fano profile which is a particular detail of the resonant absorption process. KW - resonant photoelectron spectroscopy KW - Fano profiles KW - Graphene KW - HOPG Y1 - 2013 UR - http://www.dpg-verhandlungen.de/year/2013/conference/regensburg/part/hl/session/52/contribution/5?lang=de PB - Deutsche Physikalische Gesellschaft CY - Bad Honnef ER - TY - GEN A1 - Richter, Matthias A1 - Paloumpa, Ioanna A1 - Friedrich, Daniel A1 - Schmeißer, Dieter T1 - Multiple Auger Decay At Resonant Photo-Excitation In Carbon Thin Films T2 - ECS Transactions N2 - We use resonant photoemission at the C1s edge to study the electronic structure of HOPG, graphene flakes and monolayer graphene. We find remarkable differences in the profile of the Auger decay channels, which we attribute to an additional multiple-Auger with a three-hole final state. A prerequisite for the appearance of this decay mechanism is the existence of localized excitonic states, which cause the appearance of the multiple Auger decay. We use those effects to identify the existence and the quantity of such defect states within the π*-band regime in carbon thin films, because the intensity of the three-hole Auger decay is varying with the defect density of the carbon films. We find that the appearance of the multiple Auger decay is different for multilayer and monolayer graphene. In particular the interaction of impurities leads to broadening of the C1s core levels. The three-hole Auger decay spectroscopy is a new method to detect such contaminations with a high sensitivity. KW - resonant photoelectron spectroscopy KW - graphene KW - HOPG KW - X-ray absorption spectroscopy (XAS) KW - X-ray photoelectron spectroscopy (XPS) Y1 - 2013 U6 - https://doi.org/10.1149/05020.0009ecst VL - 50 IS - 20 SP - 9 EP - 21 ER - TY - GEN A1 - Richter, Matthias A1 - Schmeißer, Dieter T1 - Spin states in Co-PI catalysts T2 - Applied Physics Letters N2 - Cobalt based oxygen evolution catalysts (Co-PI, PI=electrodeposited from pH 7 phosphate) are studied by resonant photoemission spectroscopy at the Co L3 and O1s edge. For the individual Co3d states, we determine their configuration, their spin, and their energy level relative to the Fermi energy. We identify the Co divalent high spin state and the trivalent low spin state. In addition, we also find the corresponding oxygen-to-metal charge transfer states. We attribute the trivalent charge transfer state to be the active state for the oxygen evolution reaction. KW - resonant photoelectron spectroscopy KW - CoPI KW - oxygen evolution reaction Y1 - 2013 U6 - https://doi.org/10.1063/1.4811748 SN - 1077-3118 IS - 102 SP - 253904-1 EP - 253904-4 ER - TY - CHAP A1 - Schmeißer, Dieter A1 - Richter, Matthias A1 - Tallarida, Massimo ED - Heber, Jörg ED - Schlom, Darrell ED - Tokura, Yoshinori ED - Waser, Rainer ED - Wuttig, Matthias T1 - Intrinsic defects in TiO2 to explain resistive switching devices T2 - Frontiers in Electronic Materials: A Collection of Extended Abstracts of the Nature Conference Frontiers in Electronic Materials, June 17 to 20 2012, Aachen, Germany KW - resonant photoelectron spectroscopy KW - Auger processes KW - XPS KW - X-ray absorption spectroscopy Y1 - 2012 SN - 978-3-527-41191-7 U6 - https://doi.org/10.1002/9783527667703.ch45 SP - 255 EP - 256 PB - Wiley-VCH CY - Weinheim ER - TY - CHAP A1 - Haeberle, Jörg A1 - Richter, Matthias A1 - Schmeißer, Dieter A1 - Galazka, Zbigniew A1 - Janowitz, Christoph T1 - Resonant Photoemission at the O1s threshold to characterize In2O3 single crystals T2 - Verhandlungen der Deutschen Physikalischen Gesellschaft N2 - We report on spectroscopic investigations on In2O3 single crystals. We focus on the detailed analysis of the O1s resonance profile by resonant photoelectron spectroscopy (resPES). From these we analyze the electronic structure and assign the O2p- and In5sp state to build the valence band and the conduction band in different contributions, respectively. This is deduced from constant final state spectra on the O-KLL-Auger along the O K-edge and In M4,5-edge and a comparison to the corresponding X-ray absorption spectroscopy data. We also identify several types of defects. A broad band of oxygen derived defects is identified in the valence band and extends throughout the gap. Small polarons are attributed to cause an anti-resonance in the constant initial states around the O1s threshold. In addition, an Auger decay separated by the O-KLL is present at O-K resonance and indicates the existence of localized charge transfer states which involves In5sp states. Finally, we are able to distinguish two different oxygen species from the resPES data. One corresponds to theintrinsic In2O3 structure and the other is a non-corresponding species. KW - resonant photoelectron spectroscopy KW - In2O3 Y1 - 2013 UR - http://www.dpg-verhandlungen.de/year/2013/conference/regensburg/part/mm/session/15/contribution/57?lang=de PB - Deutsche Physikalische Gesellschaft CY - Bad Honnef ER - TY - CHAP A1 - Richter, Matthias A1 - Lichterman, Michael F. A1 - Hu, Shu A1 - Crumlin, Ethan J. A1 - Axnanda, Stephanus A1 - Favaro, Marco A1 - Drisdell, Walter S. A1 - Hussain, Zahid A1 - Brunschwig, Bruce S. A1 - Liu, Zhi A1 - Lewis, Nathan S. A1 - Lewerenz, Hans-Joachim T1 - An Electrochemical, resonant Photoemission and Ambient Pressure-X-ray Photoelectron Spectroscopic Investigation of Si/TiO2/Ni/Electrolyte Interfaces T2 - Verhandlungen der Deutschen Physikalischen Gesellschaft N2 - Photoelectrochemical cells based on semiconductor-liquid interfaces provide a method of converting solar energy to electricity or fuels. Recently, we have demonstrated operational systems that involved stabilized semiconductor-liquid junctions [1]. The electrical and spectroscopic properties of the TiO2/Ni protection layer system have been investigated in contact with electrolyte solutions [2, 3, 4]. From the response of the photoelectron binding energies to variations in applied potential the energetics of the solid/electrolyte interface are elucidated. The degree of conductivity depended on the chemical state of the Ni on the TiO2 surface. The combinations of these techniques provide a powerful tool for the investigation of hybrid electrode/solution contacts. [1] Science 344 (2014) 1005; [2] Sci Rep 5 (2015) 9788; [3] Ener & Env Sci 8 (2015) 2409; [4] J Electrochem Soc 162 (2016) H1 KW - resonant photoelectron spectroscopy KW - ambient pressure spectroscopy KW - water splitting Y1 - 2016 UR - http://www.dpg-verhandlungen.de/year/2016/conference/regensburg/part/o/session/82/contribution/2?lang=en SP - S. 414 PB - Deutsche Physikalische Gesellschaft CY - Bad Honnef ER -