TY - GEN A1 - Hartmann, Carsten A1 - Richter, Lorenz A1 - Schütte, Christof A1 - Zhang, Wei T1 - Variational characterization of free energy: theory and algorithms T2 - Entropy Y1 - 2017 U6 - https://doi.org/10.3390/e19110626 SN - 1099-4300 N1 - Special Issue "Understanding Molecular Dynamics via Stochastic Processes" VL - 19 IS - 11 ER - TY - GEN A1 - Hartmann, Carsten A1 - Kebiri, Omar A1 - Neureither, Lara A1 - Richter, Lorenz T1 - Variational approach to rare event simulation using least-squares regression T2 - Chaos: An Interdisciplinary Journal of Nonlinear Science Y1 - 2019 U6 - https://doi.org/10.1063/1.5090271 SN - 1089-7682 SN - 1054-1500 VL - 29 IS - 6 ER - TY - GEN A1 - Lange, Felix A1 - Ernst, Owen C. A1 - Teubner, Thomas A1 - Richter, Carsten A1 - Schmidbauer, Martin A1 - Skibitzki, Oliver A1 - Schroeder, Thomas A1 - Schmidt, Peer A1 - Boeck, Torsten T1 - In-plane growth of germanium nanowires on nanostructured Si(001)/SiO2 substrates T2 - Nano Futures N2 - Germanium (Ge) nanowires (NWs) were grown in-plane on nano-structured Si(001)/SiO2 substrates by molecular beam epitaxy using gold (Au) as the solvent. The site-selective NW growth was enabled by a rectangular array of gold droplets on silicon (Si) tips with an Au nuclei density below 0.25 μm−2 on the surrounding silicon oxide (SiO2). The initial growth of Ge NWs starting from Si–Au droplets with SixGe1−x nucleation from ternary alloy is discussed from a thermodynamic point of view. The in-plane NW elongation occurred within ⟨110⟩ directions on the substrate and NWs were mainly bounded by two 55◦ inclined 111 facets and a less pronounced planar (001) top facet. Fully relaxed crystal lattices of Ge NWs were observed from two-dimensional reciprocal space maps of x-ray diffraction measurements. KW - Crystal growth KW - Silicon KW - Germanium KW - Phase diagram Y1 - 2020 UR - https://iopscience.iop.org/article/10.1088/2399-1984/ab82a0 U6 - https://doi.org/10.1088/2399-1984/ab82a0 SN - 2399-1984 VL - 4 IS - 3 SP - 1 EP - 8 ER - TY - GEN A1 - Strobel, Carsten A1 - Alvarado Chavarin, Carlos A1 - Leszczynski, Sebastian A1 - Richter, Karola A1 - Knaut, Martin A1 - Reif, Johanna A1 - Völkel, Sandra A1 - Albert, Matthias A1 - Wenger, Christian A1 - Bartha, Johann Wolfgang A1 - Mikolajick, Thomas T1 - Improved Graphene-base Heterojunction Transistor with Different Collector Semi-conductors for High-frequency Applications T2 - Advanced Materials Letters N2 - A new kind of transistor device with a graphene monolayer embedded between two n-type silicon layers is fabricated and characterized. The device is called graphene-base heterojunction transistor (GBHT). The base-voltage controls the current of the device flowing from the emitter via graphene to the collector. The transit time for electrons passing by the ultrathin graphene layer is extremely short which makes the device very promising for high frequency RF-electronics. The output current of the device is saturated and clearly modulated by the base voltage. Further, the silicon collector of the GBHT is replaced by germanium to improve the device performance. This enabled the collector current to be increased by almost three orders of magnitude. Also, the common-emitter current gain (Ic/Ib) increased from 10-3 to approximately 0.3 for the newly designed device. However, the ON-OFF ratio of the improved germanium based GBHT has so far been rather low. Further optimizations are necessary in order to fully exploit the potential of the graphene-base heterojunction transistor. KW - Graphene KW - transistor Y1 - 2022 U6 - https://doi.org/10.5185/amlett.2022.011688 SN - 0976-3961 VL - 13 IS - 1 ER - TY - GEN A1 - Strobel, Carsten A1 - Alvarado Chavarin, Carlos A1 - Richter, Karola A1 - Knaut, Martin A1 - Reif, Johanna A1 - Völkel, Sandra A1 - Jahn, Andreas A1 - Albert, Matthias A1 - Wenger, Christian A1 - Kirchner, Robert A1 - Bartha, Johann Wolfgang A1 - Mikolajick, Thomas T1 - Novel Graphene Adjustable-Barrier Transistor with Ultra-High Current Gain T2 - ACS Applied Materials & Interfaces N2 - A graphene-based three terminal barristor device was proposed to overcome the low on/off ratios and insufficient current saturation of conventional graphene field effect transistors. In this study, we fabricated and analyzed a novel graphene-based transistor, which resembles the structure of the barristor but uses a different operating condition. This new device, termed graphene adjustable-barriers transistor (GABT), utilizes a semiconductor-based gate rather than a metal−insulator gate structure to modulate the device currents. The key feature of the device is the two graphene-semiconductor Schottky barriers with different heights that are controlled simultaneously by the gate voltage. Due to the asymmetry of the barriers, the drain current exceeds the gate current by several orders of magnitude. Thus, the GABT can be considered an amplifier with an alterable current gain. In this work, a silicon−graphene−germanium GABT with an ultra-high current gain (ID/IG up to 8 × 106) was fabricated, and the device functionality was demonstrated. Additionally, a capacitance model is applied to predict the theoretical device performance resulting in an on−off ratio above 106, a swing of 87 mV/dec, and a drivecurrent of about 1 × 106 A/cm2. KW - Graphene KW - Transistor Y1 - 2022 U6 - https://doi.org/10.1021/acsami.2c10634 SN - 1944-8244 SN - 1944-8252 VL - 14 IS - 34 SP - 39249 EP - 39254 ER - TY - CHAP A1 - Hartmann, Carsten A1 - Richter, Lorenz ED - Klimczak, Peter ED - Petersen, Christer T1 - Transgressing the boundaries: towards a rigorous understanding of deep learning and its (non-)robustness T2 - Artificial Intelligence – Limits and Prospects Y1 - 2023 SN - 978-3-8376-5732-6 U6 - https://doi.org/10.14361/9783839457320-004 SP - 43 EP - 82 PB - transcript Verlag CY - Bielefeld ER - TY - JOUR A1 - Hartmann, Carsten A1 - Richter, Lorenz T1 - Nonasymptotic Bounds for Suboptimal Importance Sampling JF - SIAM/ASA Journal on Uncertainty Quantification Y1 - 2024 U6 - https://doi.org/10.1137/21M1427760 SN - 2166-2525 VL - 12 IS - 2 SP - 309 EP - 346 PB - Society for Industrial & Applied Mathematics (SIAM) ER -