TY - GEN A1 - Setälä, Heikki A1 - Birkhofer, Klaus A1 - Brady, Mark Vincent A1 - Byrne, Loren B. A1 - Vries, Franciska T. de A1 - Gardi, Ciro A1 - Hotes, Stefan A1 - Hedlund, Katarina A1 - Liiri, Mira A1 - Mortimer, Simon R. A1 - Pavao-Zuckerman, Mitchell A1 - Pouyat, Richard A1 - Tsiafouli, Maria A1 - Hemerik, Lia A1 - Bardgett, Richard D. A1 - Ruiter, Peter C. de A1 - Putten, Wim H. van der T1 - Urban and agricultural soils: conflicts and trade-offs in the optimization of ecosystem services T2 - Urban Ecosystems Y1 - 2014 U6 - https://doi.org/10.1007/s11252-013-0311-6 SN - 1083-8155 SN - 1573-1642 VL - 17 IS - 1 SP - 239 EP - 253 ER - TY - GEN A1 - Dorp, Dennis H. von A1 - Nyns, Laura A1 - Cuypers, Daniel A1 - Ivanov, Tsvetan A1 - Brizzi, Simone A1 - Tallarida, Massimo A1 - Fleischmann, Claudia A1 - Hönicke, Philipp A1 - Müller, Matthias A1 - Richard, Olivier A1 - Schmeißer, Dieter A1 - De Gendt, Stefan A1 - Lin, Dennis H. C. A1 - Adelmann, Christoph T1 - Amorphous Gadolinium Aluminate as a Dielectric and Sulfur for Indium Phosphide Passivation T2 - ACS Applied Electronic Materials N2 - The passivation of n-type InP (100) using sulfur in combination with a gadolinium aluminate (GAO) dielectric layer has been studied. Photoluminescence, minority-carrier lifetime, and capacitance−voltage measurements indicate that a (NH4)2S vapor passivation step prior to atomic layer deposition of the oxide effectively lowers the interface state density. Surface and interface chemistry were studied by synchrotron radiation photoemission spectroscopy (SRPES). The effect of ex situ surface passivation after native oxide removal in HCl solution was examined. It was observed that surface reoxidation occurred during (NH4)2S vapor exposure, leading to the formation of Inx(HPO4)y. S was present on the surface as a sulfide in both surface and subsurface sites. After atomic layer deposition of GAO, sulfates were detected in addition to Inx(HPO4)y, which was confirmed by near-edge X-ray absorptionfine structure analysis. The S in the stack was quantified using reference-free grazing incidence X-rayfluorescence analysis. X-ray absorption spectroscopy showed that Gd was oxidized and present in the 3+ oxidation state, most likely as a phosphate close to the InP interface and possibly mixed with sulfates. Energy-dependent SRPES measurements of Al 2p and Gd 4d core levels, complemented by transmission electron microscopy, further suggest that the dielectric layer was segregated. Valence band measurements confirm the effective passivation of InP, indicating unpinning of the surface Fermi level. KW - III−V KW - InP KW - sulfur passivation KW - atomic layer deposition KW - gadolinium aluminate KW - rare earth oxide KW - dielectric Y1 - 2019 U6 - https://doi.org/10.1021/acsaelm.9b00388 SN - 2637-6113 VL - 1 IS - 11 SP - 2190 EP - 2201 ER - TY - GEN A1 - Tsiafouli, Maria A1 - Thébault, Elisa A1 - Sgardelis, Stefanos P. A1 - Ruiter, Peter C. de A1 - Putten, Wim H. van der A1 - Birkhofer, Klaus A1 - Hemerik, Lia A1 - Vries, Franciska T. de A1 - Bardgett, Richard D. A1 - Brady, Mark Vincent A1 - Bjornlund, Lisa A1 - Bracht Jørgensen, Helene A1 - Christensen, Sören A1 - D'Hertefeldt, Tina A1 - Hotes, Stefan A1 - Hol, W. H. Gera A1 - Frouz, Jan A1 - Liiri, Mira A1 - Mortimer, Simon R. A1 - Setälä, Heikki A1 - Tzanopoulous, Joseph A1 - Uteseny, Karoline A1 - Pižl, Václav A1 - Stary, Josef A1 - Wolters, Volkmar A1 - Hedlund, Katarina T1 - Intensive agriculture reduces soil biodiversity across Europe T2 - Global Change Biology Y1 - 2015 U6 - https://doi.org/10.1111/gcb.12752 SN - 1365-2486 VL - 21 IS - 2 SP - 973 EP - 985 ER - TY - CHAP A1 - Augenstein, Edgar A1 - Leopold, F. A1 - Richard, H. T1 - Schlieren Techniques in Comparison The Background Oriented Method versus Visualization with Holographic Filters Y1 - 2001 ER - TY - CHAP A1 - Hilsenbeck, Jochen A1 - Lenk, Friedrich A1 - Lossy, Richard A1 - Würfl, Joachim A1 - Kohler, K. A1 - Obloh, H. T1 - DC and microwave properties of 0.5 um AlGaN/GaN high electron mobility transistors fabricated on 2-inch process line T2 - IEEE International Symposium on Compound Semiconductors, held in Monterey, California, 2 - 5 October 2000 N2 - DC and RF characteristics of AlGaN/GaN HEMTs processed by 2-inch stepper lithography are presented. The devices, grown by MOVPE on 2" sapphire wafers consist of: GaN buffer, Al0.25Ga0.75 N spacer, doped Al0.25Ga0.75N supply layer, Al0.25Ga0.75N barrier, GaN cap. Refractory source and gate contacts along with mesa isolation and air bridge technology are applied. Typical values for maximum saturation current, transconductance and pinch-off voltage are: 616 m/A/mm, 203 mS/mm, -3.5 V with very good homogeneity across 2". The cut off frequencies fT and fmax are 24 and 54 GHz respectively. A standard small signal equivalent circuit model exactly describes DC- and microwave properties Y1 - 2000 SN - 0-7803-6258-6 U6 - https://doi.org/10.1109/ISCS.2000.947181 SP - 351 EP - 356 PB - IEEE Service Center CY - Piscataway, NJ ER -