TY - GEN A1 - Schwartz, Bernhard A1 - Reiche, Manfred A1 - Kittler, Martin T1 - Influence of strain, donor concentration, carrier confinement, and dislocation density on the efficiency of luminiscence of Ge-based structures on Si substrate T2 - Physica Status Solidi : C, Current Topics in Solid State Physics Y1 - 2017 UR - http://onlinelibrary.wiley.com/doi/10.1002/pssc.201700018/full SN - 1610-1642 VL - 14 IS - 7 SP - 1700018-1 EP - 1700018-5 ER - TY - GEN A1 - Kittler, Martin A1 - Reiche, Manfred A1 - Schwartz, Bernhard A1 - Uebensee, Hartmut A1 - Kosina, Hans A1 - Stanojevic, Zlatan A1 - Baumgartner, Oskar A1 - Ortlepp, Thomas T1 - Transport of Charge Carriers along Dislocations in Si and Ge T2 - Physica status solidi. A, Applications and materials science N2 - Experimental observations and quantum mechanical device simulations point to different electronic properties of dislocations in silicon and germanium. The experimental data suggest a supermetallic behavior of the dislocations in Si and thus the high strain in the dislocation core is thought to cause the confinement of the charge carriers, which leads to the formation of a 1D electron gas along a dislocation (quantum wire). The resulting significant increase in the electron concentration corresponds to a marked increase in the drain current of metal–oxide–semiconductor field‐effect transistor (MOSFET). The specific resistance of an individual dislocation in Ge is about nine orders of magnitude higher than for a dislocation in Si. The experimental measurements of the strain in dislocation cores in Ge are still missing. Based on the band structure data, the generation of a strain equivalent to that of the dislocation cores in Si appears to be very challenging because of the transition from an indirect into a direct semiconductor with about tenfold lower strain levels. The lower strain in the dislocation core in germanium may not support the carrier confinement as proposed for the dislocation core of silicon, and consequently 1D electron gases are not expected to form along the dislocations in Ge. Y1 - 2019 U6 - https://doi.org/10.10002/pssa.201900287 SN - 1862-6319 VL - Volume 216 IS - 17 ER - TY - CHAP A1 - Kittler, Martin A1 - Reiche, Manfred A1 - Mtchedlidze, T. A1 - Arguirov, Tzanimir V. A1 - Jia, Guobin A1 - Seifert, Winfried A1 - Suckow, Stephan A1 - Thomas, Wilhelm T1 - Stark effect at dislocations in silicon for modulation of a 1,5 um light emitter T2 - Silicon photonics III, 21 - 24 January 2008, San Jose, California, USA Y1 - 2008 SN - 978-0-8194-7073-7 PB - SPIE CY - Bellingham, Wash. ER - TY - GEN A1 - Yu, Xuegong A1 - Arguirov, Tzanimir V. A1 - Kittler, Martin A1 - Seifert, Winfried A1 - Ratzke, Markus A1 - Reiche, Manfred T1 - Properties of dislocation networks formed by Si wafer direct bonding T2 - Materials Science in Semiconductor Processing Y1 - 2006 U6 - https://doi.org/10.1016/j.mssp.2006.01.070 VL - 9 IS - 1-3 SP - 96 EP - 101 ER - TY - JOUR A1 - Kittler, Martin A1 - Seifert, Winfried A1 - Yu, Xuegong A1 - Jia, G. A1 - Vyvenko, Oleg F. A1 - Mtchedlidze, T. A1 - Reiche, Manfred A1 - Sha, J. A1 - Yang, D. A1 - Arguirov, Tzanimir V. T1 - Silicon naostructures for IR light emitters JF - Materials Sience and Engineering C Y1 - 2007 SN - 1873-0191 VL - 27 IS - 5-8 SP - 1252 EP - 1259 ER - TY - CHAP A1 - Kittler, Martin A1 - Arguirov, Tzanimir V. A1 - Seifert, Winfried A1 - Yu, Xuegong A1 - Reiche, Manfred T1 - Dislocation engineering for a Si-based light emitter at 1.5 μm T2 - Technical digest, IEDM, IEEE International Electron Devices Meeting 2005, Washington, DC, December 5 - 7, 2005 Y1 - 2005 SN - 0-7803-9268-X SP - 1005 EP - 1008 PB - IEEE Operations Center CY - Piscataway, NJ ER - TY - PAT A1 - Kittler, Martin A1 - Arguirov, Tzanimir V. A1 - Reiche, Manfred T1 - Light-emitting semiconductor structure and optoelectronic component therefrom Y1 - 2015 ER - TY - GEN A1 - Schwartz, Bernhard A1 - Reiche, Manfred A1 - Kittler, Martin T1 - Temperature dependence of luminescence from dislocated Ge on Si substrate T2 - Materials Today: Proceedings N2 - For mono-crystalline Ge the indirect luminescence intensity declines upon growing temperature from 80 to 300 K, whereas for dislocated Ge structures the opposite behavior occurs. These findings are comparable to earlier observations on Si. The drop of the luminescence in dislocated material upon lowering temperature was attributed to the increase of the competing non-radiative recombination due to shallow dislocation states. In opposition to the indirect luminescence, the character of the direct Ge luminescence, i.e. incline of intensity upon growing temperature, is not converted by dislocations. The measured behavior of the direct peak position of Ge, in the temperature range between 80 and 300 K, is in accordance with calculated dependence and reflects the direct bandgap energy. The observed red shifts in dislocated Ge structures are shown to be produced by tensile strain, bandgap narrowing and by the Sn-content of GeSn quantum wells, respectively. A direct influence of dislocations could not be observed. Satisfying understanding of the existing temperature behavior of the indirect Ge peak position is on embryonic stage Y1 - 2018 U6 - https://doi.org/10.1016/j.matpr.2018.03.061 SN - 2214-7853 VL - 5 IS - 3,1 SP - 14712 EP - 14721 ER - TY - GEN A1 - Reiche, Manfred A1 - Kittler, Martin A1 - Schmelz, Matthias A1 - Stolz, Ronny A1 - Pippel, Eckhard A1 - Übensee, Hartmut A1 - Kermann, M. A1 - Ortlepp, Thomas T1 - Single-Electron Transitions In One-Dimensional Native Nanostructures T2 - Journal of Physics: Conference Series Y1 - 2014 U6 - https://doi.org/10.1088/1742-6596/568/5/052024 SN - 1742-6588 VL - 568 SP - 052024 ER -