TY - JOUR A1 - Kittler, Martin A1 - Arguirov, Tzanimir V. A1 - Seifert, Winfried A1 - Yu, Xuegong A1 - Reiche, Manfred T1 - Silicon-based light emitters for on-chip optical interconnects Y1 - 2005 ER - TY - JOUR A1 - Kittler, Martin A1 - Reiche, Manfred A1 - Arguirov, Tzanimir V. A1 - Seifert, Winfried A1 - Yu, Xuegong T1 - Silicon-based light emitters Y1 - 2006 ER - TY - JOUR A1 - Kittler, Martin A1 - Yu, Xuegong A1 - Vyvenko, Oleg F. A1 - Birkholz, Mario A1 - Seifert, Winfried A1 - Reiche, Manfred A1 - Wilhelm, T. A1 - Arguirov, Tzanimir V. A1 - Wolff, A. A1 - Fritzsche, W. A1 - Seibt, M. T1 - Self-organized pattern formation of biomolecules at Si surfaces: Intended application of a dislocation network Y1 - 2006 ER - TY - GEN A1 - Kittler, Martin A1 - Yu, Xuegong A1 - Mtchedlidze, T. A1 - Arguirov, Tzanimir V. A1 - Vyvenko, Oleg F. A1 - Seifert, Winfried A1 - Reiche, Manfred A1 - Wilhelm, T. A1 - Seibt, M. A1 - Voss, O. A1 - Wolff, A. A1 - Fritzsche, W. T1 - Regular dislocation networks in silicon as a tool for nanostructures devices used in optics, biology and electronics Y1 - 2007 ER - TY - JOUR A1 - Mtchedlidze, T. A1 - Wilhelm, T. A1 - Yu, Xuegong A1 - Arguirov, Tzanimir V. A1 - Jia, G. A1 - Reiche, Manfred A1 - Kittler, Martin T1 - Regular dislocation networks in Si. Part II: Lunimescence JF - Solid State Phenomena Y1 - 2008 SN - 1012-0394 VL - 131/133 SP - 503 EP - 510 ER - TY - JOUR A1 - Ratzke, Markus A1 - Yu, Xuegong A1 - Vyvenko, Oleg F. A1 - Reif, Jürgen A1 - Kittler, Martin A1 - Reiche, Manfred T1 - Scanning Probe studies of the electrical activity at interfaces formed by silicon wafer direct bonding JF - Physica Status Solidi C Y1 - 2007 SN - 1610-1634 VL - 4 IS - 8 SP - 2893 EP - 3897 ER - TY - JOUR A1 - Yu, Xuegong A1 - Vyvenko, Oleg F. A1 - Seifert, Winfried A1 - Arguirov, Tzanimir V. A1 - Wilhelm, T. A1 - Reiche, Manfred T1 - Luminescence of dislocation network in directly bonded silicon wafers Y1 - 2007 ER - TY - JOUR A1 - Akhmetov, V. D. A1 - Richter, H. A1 - Seifert, Winfried A1 - Lysytskiy, O. A1 - Wahlich, R. A1 - Müller, T. A1 - Reiche, Manfred T1 - Distribution and properties of oxide precipitates in annealed nitrogen doped 300 mm Si wafers JF - European Physics Journal of Applied Physics Y1 - 2004 SN - 1286-0042 SN - 1286-0050 VL - 27 IS - 1-3 SP - 159 EP - 161 ER - TY - CHAP A1 - Reiche, Manfred A1 - Kittler, Martin A1 - Krause, M. A1 - Übensee, Hartmut ED - Cavallini, Anna ED - Estreicher, Stefan K. T1 - Carrier Transport on Dislocations T2 - International Conference on Defects in Semiconductors 2013, proceedings of the 27th International Conference on Defects in Semiconductors, ICDS-2013, Bologna, Italy, 21-26 July 2013 Y1 - 2014 SN - 978-0-7354-1215-6 U6 - https://doi.org/10.1063/1.4865599 PB - AIP Publishing CY - Melville, New York ER - TY - GEN A1 - Reiche, Manfred A1 - Kittler, Martin A1 - Übensee, Hartmut A1 - Pippel, Eckhard A1 - Hopfe, Sigrid T1 - Dislocations as Native Nanostructures - Electronic Properties T2 - Advances in Nano Research Y1 - 2014 U6 - https://doi.org/10.12989/anr.2014.2.1.001 SN - 2287-2388 SN - 2287-237X VL - 2 IS - 1 SP - 1 EP - 14 ER - TY - GEN A1 - Reiche, Manfred A1 - Kittler, Martin A1 - Erfurth, Wilfried A1 - Pippel, Eckhard A1 - Sklarek, Kornelia A1 - Blumtritt, Horst A1 - Haehnel, Angelika A1 - Übensee, Hartmut T1 - On the Electronic Properties of a Single Dislocation T2 - Journal of Applied Physics Y1 - 2014 U6 - https://doi.org/10.1063/1.4876265 SN - 1089-7550 VL - 115 IS - 19 SP - 194303 ER - TY - GEN A1 - Reiche, Manfred A1 - Kittler, Martin A1 - Übensee, Hartmut A1 - Pippel, Eckhard A1 - Erfurth, Wilfried T1 - Single Dislocations as Nanostructure Devices: Physics and Applications T2 - ECS Transactions Y1 - 2014 U6 - https://doi.org/10.1149/06411.0267ecst VL - 64 IS - 11 SP - 267 EP - 281 ER - TY - CHAP A1 - Kittler, Martin A1 - Reiche, Manfred A1 - Krause, Hans-Michael T1 - Charge Carrier Transport Along Grain Boundaries in Silicon T2 - Gettering and defect engineering in semiconductor technology XV, selected papers from the 15th Gettering and Defect Engineering in Semiconductor Technology Conference, September 22 - 27, 2013, Oxford, UK Y1 - 2014 U6 - https://doi.org/10.4028/www.scientific.net/SSP.205-206.293 SP - 293 EP - 298 PB - Trans Tech Publ. CY - Durnten-Zurich [u.a.] ER - TY - GEN A1 - Reiche, Manfred A1 - Kittler, Martin A1 - Übensee, Hartmut A1 - Krause, Michael A1 - Pippel, Eckhard T1 - Trap-Assisted Tunneling on Extended Defects in Tunnel Field-Effect Transistors T2 - Japanese Journal of Applied Physics Y1 - 2014 U6 - https://doi.org/10.7567/JJAP.53.04EC03 SN - 1347-4065 VL - 53 IS - 4S, 04EC03 SP - 1 EP - 6 ER - TY - GEN A1 - Kittler, Martin A1 - Arguirov, Tzanimir V. A1 - Reiche, Manfred A1 - Krause, Christoph A1 - Mankovics, Daniel T1 - About dislocation and oxygen related luminescence of Si around 0.8 eV T2 - Physica Status Solidi C Y1 - 2015 U6 - https://doi.org/10.1002/pssc.201400231 SN - 1610-1642 VL - 12 IS - 8 SP - 1077 EP - 1080 ER - TY - GEN A1 - Reiche, Manfred A1 - Kittler, Martin A1 - Pippel, Eckhard A1 - Erfurth, Wilfried A1 - Haehnel, Angelika A1 - Übensee, Hartmut T1 - Strain and carrier transport along dislocations T2 - Physica Status Solidi C Y1 - 2015 U6 - https://doi.org/10.1002/pssc.201400298 SN - 1610-1642 VL - 12 IS - 8 SP - 1071 EP - 1076 ER - TY - GEN A1 - Reiche, Manfred A1 - Kittler, Martin A1 - Pippel, Eckhard A1 - Kosina, Hans A1 - Lugstein, Alois A1 - Übensee, Hartmut T1 - Electronic Properties of Dislocations T2 - Solid State Phenomena Y1 - 2015 U6 - https://doi.org/10.4028/www.scientific.net/SSP.242.141 SN - 1012-0394 VL - 242 SP - 141 EP - 146 ER - TY - GEN A1 - Reiche, Manfred A1 - Kittler, Martin A1 - Pippel, Eckhard A1 - Übensee, Hartmut A1 - Kosina, Hans A1 - Grill, Alexander A1 - Stanojevic, Zlatan A1 - Baumgartner, Oskar T1 - Impact of Defect-Induced Strain on Device Properties T2 - Advanced Engineering Materials Y1 - 2017 U6 - https://doi.org/10.1002/adem.201600736 SN - 1527-2648 N1 - Art.-Nr. 1600736 VL - 19 IS - 8 ER - TY - GEN A1 - Reiche, Manfred A1 - Kittler, Martin A1 - Übensee, Hartmut A1 - Pippel, Eckhard A1 - Haehnel, Angelika A1 - Birner, Stefan T1 - Electronic properties of dislocations T2 - Appl. Phys. A (2016) Y1 - 2016 U6 - https://doi.org/10.1007/s00339-016-9836-x VL - April 2016 122:389 ER - TY - GEN A1 - Reiche, Manfred A1 - Kittler, Martin T1 - Electronic and Optical Properties of Dislocations in Silicon T2 - Crystals Y1 - 2016 U6 - https://doi.org/10.3390/cryst6070074 SN - 2073-4352 VL - 6 IS - 7 ER - TY - GEN A1 - Schwartz, Bernhard A1 - Reiche, Manfred A1 - Kittler, Martin T1 - Influence of strain, donor concentration, carrier confinement, and dislocation density on the efficiency of luminiscence of Ge-based structures on Si substrate T2 - Physica Status Solidi : C, Current Topics in Solid State Physics Y1 - 2017 UR - http://onlinelibrary.wiley.com/doi/10.1002/pssc.201700018/full SN - 1610-1642 VL - 14 IS - 7 SP - 1700018-1 EP - 1700018-5 ER - TY - GEN A1 - Kittler, Martin A1 - Reiche, Manfred A1 - Schwartz, Bernhard A1 - Uebensee, Hartmut A1 - Kosina, Hans A1 - Stanojevic, Zlatan A1 - Baumgartner, Oskar A1 - Ortlepp, Thomas T1 - Transport of Charge Carriers along Dislocations in Si and Ge T2 - Physica status solidi. A, Applications and materials science N2 - Experimental observations and quantum mechanical device simulations point to different electronic properties of dislocations in silicon and germanium. The experimental data suggest a supermetallic behavior of the dislocations in Si and thus the high strain in the dislocation core is thought to cause the confinement of the charge carriers, which leads to the formation of a 1D electron gas along a dislocation (quantum wire). The resulting significant increase in the electron concentration corresponds to a marked increase in the drain current of metal–oxide–semiconductor field‐effect transistor (MOSFET). The specific resistance of an individual dislocation in Ge is about nine orders of magnitude higher than for a dislocation in Si. The experimental measurements of the strain in dislocation cores in Ge are still missing. Based on the band structure data, the generation of a strain equivalent to that of the dislocation cores in Si appears to be very challenging because of the transition from an indirect into a direct semiconductor with about tenfold lower strain levels. The lower strain in the dislocation core in germanium may not support the carrier confinement as proposed for the dislocation core of silicon, and consequently 1D electron gases are not expected to form along the dislocations in Ge. Y1 - 2019 U6 - https://doi.org/10.10002/pssa.201900287 SN - 1862-6319 VL - Volume 216 IS - 17 ER - TY - CHAP A1 - Kittler, Martin A1 - Reiche, Manfred A1 - Mtchedlidze, T. A1 - Arguirov, Tzanimir V. A1 - Jia, Guobin A1 - Seifert, Winfried A1 - Suckow, Stephan A1 - Thomas, Wilhelm T1 - Stark effect at dislocations in silicon for modulation of a 1,5 um light emitter T2 - Silicon photonics III, 21 - 24 January 2008, San Jose, California, USA Y1 - 2008 SN - 978-0-8194-7073-7 PB - SPIE CY - Bellingham, Wash. ER - TY - GEN A1 - Yu, Xuegong A1 - Arguirov, Tzanimir V. A1 - Kittler, Martin A1 - Seifert, Winfried A1 - Ratzke, Markus A1 - Reiche, Manfred T1 - Properties of dislocation networks formed by Si wafer direct bonding T2 - Materials Science in Semiconductor Processing Y1 - 2006 U6 - https://doi.org/10.1016/j.mssp.2006.01.070 VL - 9 IS - 1-3 SP - 96 EP - 101 ER - TY - JOUR A1 - Kittler, Martin A1 - Seifert, Winfried A1 - Yu, Xuegong A1 - Jia, G. A1 - Vyvenko, Oleg F. A1 - Mtchedlidze, T. A1 - Reiche, Manfred A1 - Sha, J. A1 - Yang, D. A1 - Arguirov, Tzanimir V. T1 - Silicon naostructures for IR light emitters JF - Materials Sience and Engineering C Y1 - 2007 SN - 1873-0191 VL - 27 IS - 5-8 SP - 1252 EP - 1259 ER - TY - CHAP A1 - Kittler, Martin A1 - Arguirov, Tzanimir V. A1 - Seifert, Winfried A1 - Yu, Xuegong A1 - Reiche, Manfred T1 - Dislocation engineering for a Si-based light emitter at 1.5 μm T2 - Technical digest, IEDM, IEEE International Electron Devices Meeting 2005, Washington, DC, December 5 - 7, 2005 Y1 - 2005 SN - 0-7803-9268-X SP - 1005 EP - 1008 PB - IEEE Operations Center CY - Piscataway, NJ ER - TY - PAT A1 - Kittler, Martin A1 - Arguirov, Tzanimir V. A1 - Reiche, Manfred T1 - Light-emitting semiconductor structure and optoelectronic component therefrom Y1 - 2015 ER - TY - GEN A1 - Schwartz, Bernhard A1 - Reiche, Manfred A1 - Kittler, Martin T1 - Temperature dependence of luminescence from dislocated Ge on Si substrate T2 - Materials Today: Proceedings N2 - For mono-crystalline Ge the indirect luminescence intensity declines upon growing temperature from 80 to 300 K, whereas for dislocated Ge structures the opposite behavior occurs. These findings are comparable to earlier observations on Si. The drop of the luminescence in dislocated material upon lowering temperature was attributed to the increase of the competing non-radiative recombination due to shallow dislocation states. In opposition to the indirect luminescence, the character of the direct Ge luminescence, i.e. incline of intensity upon growing temperature, is not converted by dislocations. The measured behavior of the direct peak position of Ge, in the temperature range between 80 and 300 K, is in accordance with calculated dependence and reflects the direct bandgap energy. The observed red shifts in dislocated Ge structures are shown to be produced by tensile strain, bandgap narrowing and by the Sn-content of GeSn quantum wells, respectively. A direct influence of dislocations could not be observed. Satisfying understanding of the existing temperature behavior of the indirect Ge peak position is on embryonic stage Y1 - 2018 U6 - https://doi.org/10.1016/j.matpr.2018.03.061 SN - 2214-7853 VL - 5 IS - 3,1 SP - 14712 EP - 14721 ER - TY - GEN A1 - Reiche, Manfred A1 - Kittler, Martin A1 - Schmelz, Matthias A1 - Stolz, Ronny A1 - Pippel, Eckhard A1 - Übensee, Hartmut A1 - Kermann, M. A1 - Ortlepp, Thomas T1 - Single-Electron Transitions In One-Dimensional Native Nanostructures T2 - Journal of Physics: Conference Series Y1 - 2014 U6 - https://doi.org/10.1088/1742-6596/568/5/052024 SN - 1742-6588 VL - 568 SP - 052024 ER -