TY - JOUR A1 - Ratzke, Markus A1 - Reif, Jürgen T1 - On the reliability of scanning probe based electrostatic force measurements Y1 - 2007 ER - TY - JOUR A1 - Varlamova, Olga A1 - Costache, Florenta Adriana A1 - Ratzke, Markus A1 - Reif, Jürgen T1 - Control parameters in pattern formation upon femtosecond laser ablation Y1 - 2007 ER - TY - GEN A1 - Schmid, Reiner P. A1 - Mankovics, Daniel A1 - Arguirov, Tzanimir V. A1 - Ratzke, Markus A1 - Mtchedlidze, T. A1 - Kittler, Martin T1 - Rapid dislocation-related D1-photoluminescence imaging of multicrystalline Si wafers at room temperature T2 - Physica Status Solidi : A Y1 - 2011 U6 - https://doi.org/10.1002/pssa.201026269 SN - 1610-1642 VL - 208 IS - 4 SP - 888 EP - 892 ER - TY - GEN A1 - Yu, Xuegong A1 - Arguirov, Tzanimir V. A1 - Kittler, Martin A1 - Seifert, Winfried A1 - Ratzke, Markus A1 - Reiche, Manfred T1 - Properties of dislocation networks formed by Si wafer direct bonding T2 - Materials Science in Semiconductor Processing Y1 - 2006 U6 - https://doi.org/10.1016/j.mssp.2006.01.070 VL - 9 IS - 1-3 SP - 96 EP - 101 ER - TY - GEN A1 - Lippert, Gunther A1 - Dabrowski, Jarek Marek A1 - Oberbeck, Lars A1 - Schroeder, Uwe A1 - Costina, Ioan A1 - Lupina, Grzegorz A1 - Ratzke, Markus A1 - Zaumseil, Peter A1 - Müssig, Hans-Joachim T1 - Morphology and composition of selected high-k materials and their relevance to dielectric properties of thin films T2 - Journal of the electrochemical society Y1 - 2008 U6 - https://doi.org/10.1149/1.2875741 SN - 1945-7111 VL - 155 IS - 5 SP - G97 EP - G114 ER - TY - GEN A1 - Klossek, Andre A1 - Mankovics, Daniel A1 - Arguirov, Tzanimir V. A1 - Ratzke, Markus A1 - Kirner, Simon A1 - Friedrich, Felice A1 - Gabriel, Onno A1 - Stannowski, Bernd A1 - Schlatmann, Rutger A1 - Kittler, Martin T1 - Growth process of microcrystalline silicon studied by combined photoluminsescence and Raman investigations T2 - Journal of applied physics Y1 - 2013 U6 - https://doi.org/10.1063/1.4838058 SN - 1520-8850 VL - 114 SP - 223511 ER - TY - GEN A1 - Reif, Jürgen A1 - Varlamova, Olga A1 - Ratzke, Markus A1 - Uhlig, Sebastian T1 - Laser-Induced Periodic Surface Structures of Thin Complex Multi-Component Films T2 - Applied Physics / A Y1 - 2016 U6 - https://doi.org/10.1007/s00339-016-9936-7 SN - 1432-0630 N1 - Art. 338 VL - 122 IS - 4 SP - 1 EP - 6 ER - TY - GEN A1 - Varlamova, Olga A1 - Martens, Christian A1 - Ratzke, Markus A1 - Reif, Jürgen T1 - Genesis of femtosecond-induced nanostructures on solid surfaces T2 - Applied Optics Y1 - 2014 SN - 1539-4522 SN - 0003-6935 VL - 53 IS - 31 SP - I10 EP - I15 ER - TY - GEN A1 - Ratzke, Markus A1 - Mchedlidze, Teimuraz A1 - Arguirov, Tzanimir V. A1 - Acharya, N. A1 - Kittler, Martin A1 - Reif, Jürgen T1 - Scanning probe studies of amorphous silicon subjected to laser annealing T2 - Physica status solidi (C) Y1 - 2011 SN - 1610-1642 VL - 8 IS - 4 SP - 1351 EP - 1355 ER - TY - GEN A1 - Costache, Florenta Adriana A1 - Ratzke, Markus A1 - Wolfframm, Dirk A1 - Reif, Jürgen T1 - Femtosecond laser ionization mass spectrometric analysis of layers grown by pulsed laser deposition T2 - Applied Surface Science Y1 - 2005 SN - 0169-4332 VL - 247 IS - 1-4 SP - 249 EP - 255 ER - TY - GEN A1 - Müller, K. A1 - Goryachko, Andriy A1 - Burkov, Yevgen A1 - Schwiertz, Carola A1 - Ratzke, Markus A1 - Köble, J. A1 - Reif, Jürgen A1 - Schmeißer, Dieter T1 - Scanning Kelvin probe and photoemission electron microscopy of organic source-drain structures T2 - Synthetic Metals Y1 - 2004 VL - 146 IS - 3 SP - 377 EP - 382 ER - TY - GEN A1 - Reif, Jürgen A1 - Martens, Christian A1 - Uhlig, Sebastian A1 - Ratzke, Markus A1 - Varlamova, Olga A1 - Valette, Stephane A1 - Benayoun, Stephane T1 - On large area LIPSS coverage by multiple pulses T2 - Applied Surface Science Y1 - 2015 U6 - https://doi.org/doi:10.1016/j.apsusc.2014.11.153 SN - 0169-4332 VL - 336 SP - 249 EP - 254 ER - TY - GEN A1 - Wolfframm, Dirk A1 - Ratzke, Markus A1 - Kouteva-Arguirova, Simona A1 - Reif, Jürgen T1 - Praseodymium Oxide growth on Si(100) by pulsed laser deposition T2 - Materials Science and Semiconductor Processing Y1 - 2002 SN - 1369-8001 VL - 5 IS - 4-5 SP - 429 EP - 434 ER - TY - THES A1 - Ratzke, Markus T1 - Kraftmikroskopie als Werkzeug zur Charakterisierung elektrischer Oberflächeneigenschaften Y1 - 2012 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:kobv:co1-opus-24440 ER - TY - GEN A1 - Obrosov, Aleksei A1 - Gulyaev, Roman A1 - Zak, Andrzej A1 - Ratzke, Markus A1 - Naveed, Muhammad A1 - Dudzinski, Wlodzimierz A1 - Weiß, Sabine T1 - Chemical and Morphological Characterization of Magnetron Sputtered at Different Bias Voltages Cr-Al-C Coatings T2 - Materials N2 - MAX phases (M = transition metal, A = A-group element, and X = C/N) are of special interest because they possess a unique combination of the advantages of both metals and ceramics. Most attention is attracted to the ternary carbide Cr2AlC because of its excellent high-temperature oxidation, as well as hot corrosion resistance. Despite lots of publications, up to now the influence of bias voltage on the chemical bonding structure, surface morphology, and mechanical properties of the film is still not well understood. In the current study, Cr-Al-C films were deposited on silicon wafers (100) and Inconel 718 super alloy by dc magnetron sputtering with different substrate bias voltages and investigated using Scanning Electron Microscopy (SEM), X-ray Photoelectron Spectroscopy (XPS), X-ray Diffraction (XRD), Atomic Force Microscopy (AFM), and nanoindentation. Transmission Electron Microscopy (TEM) was used to analyze the correlation between the growth of the films and the coating microstructure. The XPS results confirm the presence of Cr2AlC MAX phase due to a negative shift of 0.6–0.9 eV of the Al2p to pure aluminum carbide peak. The XRD results reveal the presence of Cr2AlC MAX Phase and carbide phases, as well as intermetallic AlCr2. The film thickness decreases from 8.95 to 6.98 µm with increasing bias voltage. The coatings deposited at 90 V exhibit the lowest roughness (33 nm) and granular size (76 nm) combined with the highest hardness (15.9 GPa). The ratio of Al carbide to carbide-like carbon state changes from 0.12 to 0.22 and correlates with the mechanical properties of the coatings. TEM confirms the columnar structure, with a nanocrystalline substructure, of the films. KW - XPS KW - AFM KW - MAX phase KW - TEM KW - chemical bonding KW - surface morphology Y1 - 2017 UR - http://www.mdpi.com/1996-1944/10/2/156/htm U6 - https://doi.org/10.3390/ma10020156 SN - 1996-1944 VL - 10 IS - 2 SP - 156 ER -