TY - GEN A1 - Rao, Megha Krishnaji A1 - Wentzel, Andreas A1 - Hoffmann, Thomas A1 - Schellhase, Lars A1 - Chevtchenko, Serguei A. A1 - Rudolph, Matthias T1 - Digital GaN-based transceiver module for future green 5G networks T2 - 2024 54th European Microwave Conference (EuMC) Y1 - 2024 U6 - https://doi.org/10.23919/EuMC61614.2024.10732423 SP - 136 EP - 139 PB - IEEE ER - TY - GEN A1 - Rao, Megha Krishnaji A1 - Dörner, Ralf A1 - Yazdani, Hossein A1 - Rudolph, Matthias T1 - GaN-HEMT Based Common-Gate LNA MMIC with Integrated Switch for Compact 5G Transceivers T2 - IEEE Microwaves, Antennas, and Propagation Conference (MAPCON) Y1 - 2022 SN - 978-1-6654-5203-8 SN - 978-1-6654-5204-5 U6 - https://doi.org/10.1109/MAPCON56011.2022.10047410 SP - 1104 EP - 1107 ER - TY - GEN A1 - Rao, Megha Krishnaji A1 - Dörner, Ralf A1 - Chevtchenko, Serguei A. A1 - Haque, Sanaul A1 - Rudolph, Matthias T1 - Common-Gate LNA MMIC With Switching Feature Using GaN-HEMT for 5G RF Front-Ende T2 - IEEE Microwave and Wireless Technology Letters Y1 - 2023 U6 - https://doi.org/10.1109/LMWT.2023.3306177 SN - 2771-9588 SN - 2771-957X VL - 33 IS - 10 SP - 1446 EP - 1449 ER - TY - GEN A1 - Krishnaji Rao, Megha A1 - Wentzel, Andreas A1 - Hoffmann, Thomas A1 - Schellhase, Lars A1 - A. Chevtchenko, Serguei A1 - Yazdani, Hossein A1 - Rudolph, Matthias T1 - Digital GaN-based transceiver architectures for sustainable 5G networks T2 - International journal of microwave and wireless technologies N2 - This paper presents two distinct configurations of a GaN-based digital transceiver (TRx) to evaluate their performance and integration efficiency. The first configuration, features a novel low-noise amplifier with integrated switching capability (LNAiS) and a digital class-E power amplifier (PA) on a single compact chip. The LNAiS eliminates the need for an external antenna switch, reducing module complexity and chip size while maintaining high performance. It achieves a gain of 12.7 dB and a noise figure of 3 dB at 4.7 GHz in Rx mode and provides over 20 dB isolation in Tx mode across 4.7–7.4 GHz. The digital PA demonstrates flexibility and efficiency, achieving 46% and 23% efficiencies for 20 MHz LTE and OFDM signals, respectively, and 22% for a 240 MHz OFDM signal with 10 dB PAPR. The second configuration integrates the same concept of digital PA with a standard LNA and an SPDT switch (LNAsS), achieving a gain of 24.8 dB and a noise figure of 2.65 dB at 4.2 GHz. This work highlights the trade-offs between these two architectures and demonstrates that the LNAiS-based approach drives the development of greener, more flexible, compact,lower-complexity, and cost-effective transceivers for 5G networks. KW - GaN KW - HEMT KW - MMIC KW - Transceiver KW - FEM KW - LNA KW - PA KW - spdt switch KW - Digital KW - PWM KW - Class-E KW - 5G Y1 - 2025 U6 - https://doi.org/10.1017/S1759078725102262 SN - 1759-0787 SP - 1 EP - 9 PB - Cambridge University Press (CUP) CY - Cambridge ER - TY - GEN A1 - Rao, Megha Krishnaji A1 - Beleniotis, Petros A1 - Hoffmann, Thomas A1 - Yazdani, Hossein A1 - Wentzel, Andreas A1 - Rudolph, Matthias T1 - Switch-integrated GaN LNAs : a technology-focused analysis T2 - 2025 20th European Microwave Integrated Circuits Conference (EuMIC) N2 - This paper presents the first circuit-level analysis of a two-stage GaN-HEMT LNA with an integrated switch, comparing two distinct technologies: one with a standard passivation layer (Type A) and another featuring an advanced passivation layer (Type B). Through a detailed evaluation of their performance in both amplification and isolation modes, the study highlights Type B as a significant advancement over Type A. Leveraging technological enhancements, including an improved passivation layer and slightly optimized component matching, Type B demonstrates superior performance. The results are compelling, with Type B achieving a gain of 19 dB, a low noise figure of 1.17dB, and small-signal isolation exceeding 30 dBm at 5.2 GHz. These achievements establish Type B as a formidable option for future 5G telecommunication systems, offering a performance that challenges traditional designs that use separate switches. Y1 - 2025 SN - 978-2-87487-082-8 U6 - https://doi.org/10.23919/EuMIC65284.2025.11234676 SP - 29 EP - 32 PB - IEEE CY - Piscataway, NJ ER -