TY - CHAP A1 - Kerstein, Alan R. A1 - Glawe, Christoph A1 - Schmidt, Heiko A1 - Klein, Rupert A1 - Gonzalez-Juez, Esteban D. A1 - Schmidt, Rodney T1 - Computational modeling of scalar transport and buoyancy effects in turbulent flows using ODTLES T2 - Bulletin of the American Physical Society Y1 - 2012 UR - http://meeting.aps.org/Meeting/DFD12/Event/176984 N1 - 65th Annual Meeting of the APS Division of Fluid Dynamics, Sunday–Tuesday, November 18–20, 2012 San Diego, California VL - 57 IS - 17 ER - TY - CHAP A1 - Ristau, R. A1 - Meier, M. A1 - Egbers, Christoph A1 - Schmidt, J.-R. A1 - Poppe, T. T1 - Partikelbeladene Strömungen : Simulation und Messtechnik Y1 - 2001 ER - TY - CHAP A1 - Berg, R. A1 - Cordsen, J. A1 - Heuer, J. A1 - Nolte, Jörg A1 - Oestmann, B. A1 - Sander, M. A1 - Schmidt, Heiko A1 - Schön, F. A1 - Schröder-Preikschat, Wolfgang T1 - The PEACE Family of Distributed Operating Systems Y1 - 1991 ER - TY - CHAP A1 - Berg, R. A1 - Cordsen, J. A1 - Hastedt, Ch. A1 - Heuer, J. A1 - Nolte, Jörg A1 - Sander, M. A1 - Schmidt, Heiko A1 - Schön, F. A1 - Schröder-Preikschat, Wolfgang T1 - Making Massively Parallel Systems Work Y1 - 1991 ER - TY - GEN A1 - Schmidt, Heiko A1 - Kerstein, Alan R. A1 - Nédélec, Renaud A1 - Wunsch, Scott A1 - Sayler, Ben J. T1 - Numerical study of radiatively induced entrainment T2 - Journal of Physics: Conference Series Y1 - 2011 U6 - https://doi.org/10.1088/1742-6596/318/7/072017 SN - 1742-6588 VL - 318 SP - 072017 ER - TY - GEN A1 - Schmidt, Heiko A1 - Kerstein, Alan R. A1 - Nédélec, Renaud A1 - Wunsch, Scott A1 - Sayler, Ben J. T1 - Analysis and numerical simulation of a laboratory analog of radiatively induced cloud-top entrainment T2 - Theoretical Computational Fluid Dynamics Y1 - 2012 U6 - https://doi.org/10.1007/s00162-012-0288-4 SN - 1432-2250 ER - TY - CHAP A1 - Schmidt, Heiko A1 - Schulz, Falko T. A1 - Kerstein, Alan R. T1 - Toward modeling of multi- phase flow patterns using a combination of level sets and one-dimensional turbulence T2 - EGU General Assembly 2011, Vienna, Austria, 03 – 08 April 2011 Y1 - 2011 UR - http://meetingorganizer.copernicus.org/EGU2011/EGU2011-10258.pdf N1 - EGU2011-10258 ER - TY - GEN A1 - Oevermann, Michael A1 - Schmidt, Heiko A1 - Kerstein, Alan R. T1 - HCCI combustion modeling using detailed chemistry coupled to LEM-based advection T2 - Combustion and Flame Y1 - 2008 SN - 1556-2921 VL - 155 IS - 3 SP - 370 EP - 379 ER - TY - GEN A1 - Schulz, Falko T. A1 - Glawe, Christoph A1 - Schmidt, Heiko A1 - Kerstein, Alan R. T1 - Toward modeling of CO2 multi-phase flow patterns using a stochastic multi-scale approach T2 - Environmental Earth Sciences Y1 - 2013 U6 - https://doi.org/10.1007/s12665-013-2461-5 SN - 1866-6299 VL - 70 IS - 8 SP - 3739 EP - 3748 ER - TY - CHAP A1 - Schulz, Falko T. A1 - Glawe, Christoph A1 - Schmidt, Heiko A1 - Kerstein, Alan R. T1 - Liquid jet simulation using one-dimensional turbulence T2 - 14th European Turbulence Conference, Lyon, France, September 1-4, 2013 Y1 - 2013 UR - http://etc14.ens-lyon.fr/etc-14-proceedings/accepted-talks/ ER - TY - CHAP A1 - Schulz, Falko T. A1 - Glawe, Christoph A1 - Kerstein, Alan R. A1 - Schmidt, Heiko T1 - Toward modeling of supercritical CO2 flow using map-based advection T2 - EGU General Assembly 2012, held 22-27 April, 2012 in Vienna Y1 - 2012 UR - http://meetingorganizer.copernicus.org/EGU2012/EGU2012-8816-1.pdf N1 - EGU2012-8816-1 ER - TY - CHAP A1 - Schmidt, Heiko A1 - Kerstein, Alan R. T1 - Modeling of wind-field fluctuations using the one-dimensional-turbulence model T2 - The Science of Making Torque from Wind, Oldenburg, Germany, October 9-11, 2012 Oldenburg Germany Y1 - 2012 UR - https://www-docs.b-tu.de/fg-stroemungsmodellierung/public/2012_Forwind_Oldenburg.pdf ER - TY - CHAP A1 - Schmidt, Heiko A1 - Kerstein, Alan R. T1 - Towards a multiscale strategy for modeling high-pressure flow of carbon dioxide for sequestration T2 - Geoenergy 2010, Potsdam, Germany Y1 - 2010 UR - https://www-docs.b-tu.de/fg-stroemungsmodellierung/public/2010_GeoEn_Potsdam.pdf ER - TY - CHAP A1 - Nédélec, Renaud A1 - Schmidt, Heiko A1 - Wunsch, Scott A1 - Sayler, Ben J. A1 - Kerstein, Alan R. T1 - Comparison of Entrainment Rates from a Tank Experiment with Results Us- ing the One-Dimensional-Turbulence Model T2 - EGU General Assembly 2010, held in Vienna, Austria, 02 – 07 May 2010 Y1 - 2010 UR - http://meetingorganizer.copernicus.org/EGU2010/EGU2010-378-1.pdf N1 - EGU2010-378-1 ER - TY - CHAP A1 - Oevermann, Michael A1 - Schmidt, Heiko A1 - Kerstein, Alan R. T1 - Linear eddy modeling of n-heptane combustion in HCCI engines T2 - 12th SIAM International Conference on Numerical Combustion Y1 - 2008 UR - http://www.siam.org/meetings/nc08/prgNC08.pdf ER - TY - GEN A1 - Kerstein, Alan R. A1 - Schmidt, Heiko A1 - Nédélec, Renaud A1 - Wunsch, Scott A1 - Sayler, Ben J. T1 - Analysis and numerical simulation of a laboratory analog of radiatively induced cloud-top entrainment T2 - Bulletin of the American Physical Society Dynamics Y1 - 2010 UR - http://meetings.aps.org/Meeting/DFD10/Event/133814 N1 - 63rd Annual Meeting of the APS Division of Fluid Dynamics, November 21–23, 2010, Long Beach, California VL - 55 IS - 16 ER - TY - GEN A1 - Sonia, G. A1 - Richter, E. A1 - Brunner, F. A1 - Denker, A. A1 - Lossy, R. A1 - Mai, M. A1 - Lenk, Friedrich A1 - Bundesmann, J. A1 - Pensl, G. A1 - Schmidt, J. A1 - Zeimer, U. A1 - Wang, L. A1 - Baskar, K. A1 - Weyers, M. A1 - Würfl, Joachim A1 - Tränkle, Günther T1 - 2 MeV ion irradiation effects on AlGaN/GaN HFET devices T2 - Solid-State Electronics N2 - AlGaN/GaN heterostructure field effect transistors (HFETs) were irradiated with 2 MeV protons, carbon, oxygen, iron and krypton ions with fluences ranging from 1 × 109 cm−2 to 1 × 1013 cm−2. DC, pulsed I–V characteristics, loadpull and S-parameters of the AlGaN HFET devices were measured before and after irradiation. In parallel, a thick GaN reference layer was also irradiated with the same ions and was characterized by X-ray diffraction, photoluminescence, Hall measurements before and after irradiation. Small changes in the device performance were observed after irradiation with carbon and oxygen at a fluence of 5 × 1010 cm−2. Remarkable changes in device characteristics were seen at a fluence of 1 × 1012 cm−2 for carbon, oxygen, iron and krypton irradiation. Similarly, remarkable changes were also observed in the GaN layer for irradiations with fluence of 1 × 1012 cm−2. The results found on devices and on the GaN layer were compared and correlated. Y1 - 2008 UR - http://www.sciencedirect.com/science/article/pii/S0038110108000671 SN - 0038-1101 VL - 52 IS - 7 SP - 1011 EP - 1017 ER - TY - GEN A1 - Gnanapragasam, S. A1 - Richter, E. A1 - Brunner, F. A1 - Denker, A. A1 - Lossy, R. A1 - Mai, M. A1 - Lenk, Friedrich A1 - Opitz-Coutureau, J. A1 - Pensl, G. A1 - Schmidt, J. A1 - Zeimer, U. A1 - Wang, L. A1 - Krishnan, B. A1 - Weyers, M. A1 - Würfl, Joachim A1 - Tränkle, Günther T1 - Irradiation effects on AlGaN HFET devices and GaN layers T2 - Journal of Materials Science: Materials in Electronics N2 - AlGaN/GaN heterostructure field effect transistors (HFETs) were irradiated with protons as well as carbon, oxygen, iron and krypton ions of high (68 and 120 MeV) and low (2 MeV) energy with fluences in the range from 1x107 to 1x1013 cm-2. High energy irradiation with protons, carbon and oxygen produced no degradation in devices while krypton irradiation at the fluence of 1x1010 cm-2 resulted in a small reduction of 2% in the transconductance. Similarly, for GaN samples irradiated with protons, carbon and oxygen at high energy no changes were seen by XRD, PL and Hall effect, while changes in lattice constant and a reduction in PL intensity were observed after irradiation with high energy krypton. Low energy irradiation with carbon and oxygen at a fluence of 5x1010 cm-2 results in small change in the device performance while remarkable changes in device characteristics are seen at a fluence of 1x1012 cm-2 for carbon, oxygen, iron and krypton irradiation. Similarly changes are also observed by XRD, PL and Hall effect for the thick GaN layer irradiated at the fluence of 1x1012 cm-2. The device results and GaN layer properties are strongly correlated. Y1 - 2008 U6 - https://doi.org/10.1007/s10854-008-9589-1 SN - 1573-482X VL - 19 IS - 1 SP - 64 EP - 67 ER - TY - CHAP A1 - Movaghar, Amirreza A1 - Linne, Mark A1 - Oevermann, Michael A1 - Meiselbach, Falko T. A1 - Schmidt, Heiko A1 - Kerstein, Alan R. T1 - Numerical study of liquid breakup at the surface of turbulent liquid jets using One-Dimensional Turbulence T2 - 26th Annual Conference on Liquid Atomization and Spray Systems, ILASS, proceedings of the Conference, Bremen, Germany, 08.09.2014 - 10.09.2014 N2 - This paper presents an investigation of primary breakup of planar turbulent liquid jets and breakup properties at the surface of turbulent jets in still air at standard conditions. Numerical simulations are carried out for jet exit Reynolds number 23000 and Weber numbers in the range [102–107]. Due to the limitation of direct numerical simulation (DNS) to moderate Reynolds numbers, a stochastic 1D ansatz based on the one-dimensional turbulence (ODT) model is used to simulate a planar liquid jet with a high lateral resolution. ODT permits an affordable high resolution of interface and single-phase property gradients which are key for understanding the local behavior. ODT is a stochastic model simulating turbulent flow evolution along a notional 1D line of sight by applying instantaneous maps to represent the effect of individual turbulent eddies on property profiles. The most relevant mechanisms that influence the primary breakup of liquid jets are found to be represented accurately based on comparisons to experiments and correlations reported in the literature. Building on this finding, future work will focus on the statistics of droplets generated by primary breakup, both to investigate their relationship to breakup mechanisms and to provide input to models of secondary breakup and subsequent spray evolution. Y1 - 2014 SN - 978-3-00-047070-7 CY - Bremen ER - TY - GEN A1 - Schmidt, Heiko A1 - Glawe, Christoph A1 - Jozefik, Zoltan A1 - Meiselbach, Falko T. A1 - Kerstein, Alan R. T1 - On the benefits of ODT-based stochastic turbulence modeling T2 - Proceedings in applied mathematics and mechanics : PAMM N2 - We summarize the group’s progress in applying, analyzing, and improving ODT and ODT-based stochastic turbulence models like ODTLES. Compared to DNS these models span a wider range of scales while compared to RANS/LES (i) the molecular effects are retained and (ii) no assumption of scale separation is made. In this regard ODTLES has more properties of DNS than of standard LES. Y1 - 2014 SN - 1617-7061 VL - 14 IS - 1 SP - 655 EP - 656 ER -