TY - GEN A1 - Bär, Marcus A1 - Song, X. A1 - Caballero, R. A1 - Duarte, Roberto Felix A1 - Gerlach, Dominic A1 - Kaufmann, Christian A1 - Schock, Hans-Werner A1 - Wilks, Regan G. T1 - Na incorporation into Cu(In,Ga)Se2 thin-film solar cell absorbers deposited on polyimide: Impact on the chemical and electronic surface structure T2 - Journal of Applied Physics N2 - Na has deliberately been incorporated into Cu(In,Ga)Se2 (“CIGSe”) chalcopyrite thin-film solar cell absorbers deposited on Mo-coated polyimide flexible substrates by adding differently thick layers of NaF in-between CIGSe absorber and Mo back contact. The impact of Na on the chemical and electronic surface structure of CIGSe absorbers with various Cu-contents deposited at comparatively low temperature (420 °C) has been studied using x-ray photoelectron and x-ray excited Auger electron spectroscopy. We observe a higher Nasurface content for the Cu-richer CIGSe samples and can distinguish between two different chemical Na environments, best described as selenide-like and oxidized Na species, respectively. Furthermore, we find a Cu-poor surface composition of the CIGSe samples independent of Na content and — for very high Na contents — indications for the formation of a (Cu,Na)–(In,Ga)–Se like compound. With increasing Nasurface content, also a shift of the photoemission lines to lower binding energies could be identified, which we interpret as a reduction of the downward band bending toward the CIGSe surface explained by the Na-induced elimination of InCu defects. Y1 - 2012 SN - 1089-7550 VL - 111 IS - 3 SP - 034903 ER -