TY - CHAP A1 - Mikalo, Ricardo Pablo A1 - Hoffmann, Patrick A1 - Schmeißer, Dieter A1 - Lloyd Spetz, Anita A1 - Lundström, Ingemar A1 - Wawra, Herbert A1 - Pressel, Klaus A1 - Ourmazd, Abbas T1 - Depth profiling using synchrotron radiation with high energetic resolution as demonstrated for Si-, SiC-, SiGe-, and SiGeC-samples T2 - Verhandlungen der Deutschen Physikalischen Gesellschaft N2 - Photoelectron spectroscopy utilizing synchrotron radiation of high energetic resolution (more than E/ΔE=3000) was used to record the Si2p emission signal of Si, SiC, SiGe, and SiGeC samples. The spectra exhibit signals of the elemental silicon as well as of fully oxidised silicon. Upon variing the photon energy, and therefore the escape depth of the photoelectrons, we find an oxidic silicon signal which is only half oxidized. This half oxidized silicon is located to be at the interface of the bulk material with the oxide. We determine the thickness of the surface oxide from the total ratio of oxidic and elemental silicon. We find differences between the interface and bulk oxides regarding their elemental composition. The line width of the elemental Si2p-signal exhibits a broadening of approximately 200meV while variing the photoelectron escape depth. This behaviour is interpreted as caused by surface stress. KW - X-Ray photoelectron spectroscopy (XPS) KW - synchrotron KW - depth profiling Y1 - 2001 UR - http://www.dpg-verhandlungen.de/year/2001/conference/hamburg/part/o/session/13/contribution/74?lang=de PB - Deutsche Physikalische Gesellschaft CY - Bad Honnef ER - TY - GEN A1 - Schmeißer, Dieter A1 - Pressel, Klaus A1 - Yamamoto, Yuji A1 - Tillack, Bernd A1 - Krüger, D. T1 - Ge instabilities near interfaces in Si-SiGe-Si heterostructures T2 - Materials Science & Engineering B N2 - Compositional characterization of interfaces in Si-cap/SixGe1-x/Si heterostructures is an important topic in SiGe based advanced microelectronics and in quantum wells. Extremely high depth resolution is required to detect and optimize near-interface compositional gradients which are crucial for high circuit performance. We report on non-destructive, high-resolution, near-interface depth profiling using SR photoelectron spectroscopy at an undulator beamline. We measured the Ge content at the SixGe1-x interface towards the native SiO2 layer and investigated the influence of additional (1nm and 2nm) Si capping layers (Si-cap). For the uncapped samples we found near the oxide/ SiGe interface region a strong mixing of Ge-oxides and SiOx. This indicates a high instability of the Ge atoms at those interfaces while silicon capped (1nm, 2nm) SixGe1-x films are more stable. We detect sharp Ge concentration gradients within the first 1nm at the Si/SixGe1-x interface. These results open new possibilities for Ge profile optimization in Si-cap/SixGe1-x/Si heterostructures. In the Ge3d spectra we differentiate the Ge atoms to occupy three different lattice sites and are able to follow their relative occupation within the Ge gradient. KW - SiGe KW - Depth profiling KW - Interfaces KW - XPS Y1 - 2003 SN - 0921-5107 SN - 1873-4944 VL - 101 IS - 1-3 SP - 208 EP - 211 ER -