TY - GEN A1 - Bär, Marcus A1 - Schubert, Björn-Arvid A1 - Marsen, Björn A1 - Wilks, Regan G. A1 - Pookpanratana, Sujitra A1 - Blum, Monika A1 - Krause, Stefan A1 - Unold, Thomas A1 - Yang, Wan Li A1 - Weinhardt, Lothar A1 - Heske, Clemens A1 - Schock, Hans-Werner T1 - Cliff-like conduction band offset and KCN-induced recombination barrier enhancement at the CdS/Cu2ZnSnS4 thin-film solar cell heterojunction N2 - The electronic structure of the CdS/Cu2ZnSnS4 (CZTS) heterojunction was investigated by direct and inverse photoemission. The effects of a KCN etch of the CZTS absorber prior to CdS deposition on the band alignment at the respective interface were studied. We find a “cliff”-like conduction band offset at the CdS/CZTS interface independent of absorber pretreatment and a significant etch-induced enhancement of the energetic barrier for charge carrier recombination across the CdS/CZTS interface. KW - kesterite KW - thin-film solar cells KW - energy band alignment Y1 - 2011 ER - TY - GEN A1 - Bär, Marcus A1 - Schubert, Björn-Arvid A1 - Marsen, Björn A1 - Krause, Stefan A1 - Pookpanratana, Sujitra A1 - Unold, Thomas A1 - Weinhardt, Lothar A1 - Heske, Clemens A1 - Schock, Hans-Werner T1 - Impact of KCN etching on the chemical and electronic surface structure of Cu2ZnSnS4 thin-film solar cell absorbers N2 - The chemical and electronic surface structure of Cu2ZnSnS4 thin-film solar cell absorbers has been investigated by direct and inverse photoemission. Particular emphasis was placed on the impact of KCN etching, which significantly alters the surface composition and is best explained by a preferred etching of Cu and, to a lesser degree, Sn. As a consequence the surface band gap increased from (1.53 +/- 0.15) eV, which agrees with optically derived bulk band gap values, to (1.91 +/- 0.15) ev. KW - kesterite KW - thin-film solar cells KW - electronic surface structure Y1 - 2011 ER -