TY - GEN A1 - Krause, Sascha A1 - Beleniotis, Petros A1 - Bengtsson, Olof A1 - Rudolph, Matthias A1 - Heinrich, Wolfgang T1 - Characterization of the Impairment and Recovery of GaN-HEMTs in Low-Noise Amplifiers under Input Overdrive T2 - 2021 IEEE MTT-S International Microwave Symposium (IMS), 07-25 June 2021, Atlanta, GA, USA Y1 - 2021 SN - 978-1-6654-0307-8 SN - 978-1-6654-3141-5 U6 - https://doi.org/10.1109/IMS19712.2021.9574839 SN - 2576-7216 SN - 0149-645X SP - 515 EP - 518 ER - TY - GEN A1 - Beleniotis, Petros A1 - Schnieder, Frank A1 - Rudolph, Matthias T1 - Simulating Drain Lag of GaN HEMTs with physics-based ASM Model T2 - 2020 15th European Microwave Integrated Circuits Conference (EuMIC), 10-15 January 2021, Utrecht, Netherlands Y1 - 2021 UR - https://ieeexplore.ieee.org/document/9337389 SN - 978-2-87487-060-6 SN - 978-1-7281-7040-4 SP - 165 EP - 168 ER - TY - GEN A1 - Beleniotis, Petros A1 - Chevtchenko, Serguei A. A1 - Rudolph, Matthias T1 - Statistical Medeling of GaN HEMTs by Direct Transfer of Veriations to Model Parameters T2 - 16th European Microwave Integrated Circuits Conference (EuMIC), 03-04 April 2022, London, United Kingdom Y1 - 2022 SN - 978-2-87487-064-4 SN - 978-1-6654-4722-5 U6 - https://doi.org/10.23919/EuMIC50153.2022.9783780 SP - 63 EP - 66 ER - TY - GEN A1 - Krause, Sascha A1 - Zervos, Christos A1 - Beleniotis, Petros A1 - Ritter, Dan A1 - Rudolph, Matthias A1 - Heinrich, Wolfgang T1 - On the Influence of Transistor Dimensions on the Dispersive Behavior in A1GaN/GaN HEMT-Based PAs and Robust LNAs T2 - IEEE/MTT-S International Microwave Symposium - IMS 2022, 19-24 June 2022 Denver, CO, USA Y1 - 2022 SN - 978-1-6654-9613-1 SN - 978-1-6654-9614-8 U6 - https://doi.org/10.1109/IMS37962.2022.9865474 SP - 914 EP - 917 PB - IEEE CY - Piscataway ER - TY - GEN A1 - Beleniotis, Petros A1 - Schnieder, Frank A1 - Krause, Sascha A1 - Haque, Sanaul A1 - Rudolph, Matthias T1 - An efficient drain-lag model for microwave GaN HEMTs based on ASM-HEMT T2 - International Journal of Microwave and Wireless Technologie Y1 - 2022 U6 - https://doi.org/10.1017/S1759078721001483 SN - 1759-0795 VL - 14 IS - 2 SP - 134 EP - 142 ER - TY - GEN A1 - Zervos, Christos A1 - Beleniotis, Petros A1 - Rudolph, Matthias T1 - Prediction of the large-signal GaN HEMT performance using accurate TCAD-compact modeling method T2 - 2024 19th European Microwave Integrated Circuits Conference (EuMIC) Y1 - 2024 U6 - https://doi.org/10.23919/EuMIC61603.2024.10732230 SP - 186 EP - 189 PB - IEEE ER - TY - GEN A1 - Zervos, Christos A1 - Beleniotis, Petros A1 - Rudolph, Matthias T1 - A computational analysis of the impact of thin undoped channels in surface-related current collapse of AlGaN/GaN HEMTs T2 - Semiconductor Science and Technology N2 - Abstract This study provides an insight into the impact of thin purely undoped GaN channel thickness (t ch) on surface-related trapping effects in AlGaN/GaN high electron mobility transistors. Our TCAD study suggests that in cases where parasitic gate leakage is the driving trapping mechanism that promotes the injection of electrons from the Schottky gate contact into surface states, this effect can be alleviated by reducing t ch of the undoped GaN channel. We show that by decreasing t ch from 130 to 10 nm, devices exhibit a reduction in gate-related current collapse under the specific class-B RF operating bias conditions as a consequence of a substantial decrease in the off-state gate leakage with reducing t ch. Large-signal simulations revealed an increase by 3 W mm−1 and about 12% output power and power-added efficiency due to the decrease of gate-related collapse. This work, for the first time, highlights the role of a proper purely undoped GaN t ch selection to alleviate gate-related surface trapping in the design of GaN-based microwave power amplifiers. Y1 - 2024 U6 - https://doi.org/10.1088/1361-6641/ad689c SN - 0268-1242 VL - 39 IS - 9 SP - 1 EP - 8 PB - IOP Publishing ER - TY - GEN A1 - Beleniotis, Petros A1 - Krause, Sascha A1 - Zervos, Christos A1 - Rudolph, Matthias T1 - A Physics-Based Model for Slow Gate-Induced Electron Trapping in GaN HEMTs T2 - IEEE Transactions on Electron Devices Y1 - 2024 U6 - https://doi.org/10.1109/TED.2024.3397234 SN - 0018-9383 VL - 71 IS - 7 SP - 4058 EP - 4065 PB - Institute of Electrical and Electronics Engineers (IEEE) ER - TY - GEN A1 - Beleniotis, Petros A1 - Zervos, Christos A1 - Krause, Sascha A1 - Chevtchenko, Serguei A1 - Ritter, Dan A1 - Rudolph, Matthias T1 - Investigation of traps impact on PAE and linearity of AlGaN/GaN HEMTs relying on a combined TCAD–compact model approach T2 - IEEE Transactions on Electron Devices Y1 - 2024 U6 - https://doi.org/10.1109/TED.2024.3388386 SN - 0018-9383 VL - 71 (2024) IS - 6 SP - 3582 EP - 3589 PB - Institute of Electrical and Electronics Engineers (IEEE) ER - TY - GEN A1 - Yazdani, Hossein A1 - Zervos, Christos A1 - Beleniotis, Petros A1 - Brusaterra, Enrico A1 - Hilt, Oliver A1 - Rudolph, Matthias A1 - Würfl, Joachim T1 - Importance of Scaling in RF GaN HEMTs for Reduction of Surface Traps‐Induced Drain Lag T2 - Physica Status Solidi (a) N2 - Drain lag is a well‐known phenomenon that leads to radio frequency performance degradation in AlGaN/GaN high‐electron‐mobility transistors. Herein, it is demonstrated that a reduction of the gate‐to‐drain distance (Lgd) from 2.0 to 0.5 μm results in 7% reduction in the current collapse. This improvement is attributed to a decrease in surface trapping, which, in this case, is found to have a greater impact on current collapse than relatively slow traps in the buffer layer. To support this argument, TCAD simulations are conducted. Load‐pull analysis confirms that scaling the devices to Lgd = 0.5 μm provides 15% better output power density at 10 GHz than Lgd = 2.0 μm. Additionally, a new passivation layer for reduced surface traps exhibits a 20 to 30% higher output power density and at least a 10% improvement in power‐added efficiency at 20 GHz on a nominally identical GaN‐on‐semi‐insulating SiC epi‐wafer. Y1 - 2024 U6 - https://doi.org/10.1002/pssa.202300885 SN - 1862-6300 SP - 1 EP - 8 PB - Wiley ER -