TY - GEN A1 - Heinrich, Ingo A1 - Balanzategui, Daniel A1 - Bens, Oliver A1 - Blasch, Gerald A1 - Blume, Theresa A1 - Böttcher, Falk A1 - Borg, Erik A1 - Brademann, Brian A1 - Brauer, Achim A1 - Conrad, Christopher A1 - Dietze, Elisabeth A1 - Dräger, Nadine A1 - Fiener, Peter A1 - Gerke, Horst H. A1 - Güntner, Andreas A1 - Heine, Iris A1 - Helle, Gerhard A1 - Herbrich, Marcus A1 - Harfenmeister, Katharina A1 - Heußner, Karl-Uwe A1 - Hohmann, Christian A1 - Itzerott, Sibylle A1 - Jurasinski, Gerald A1 - Kaiser, Knut A1 - Kappler, Christoph A1 - Koebsch, Franziska A1 - Liebner, Susanne A1 - Lischeid, Gunnar A1 - Merz, Bruno A1 - Missling, Klaus Dieter A1 - Morgner, Markus A1 - Pinkerneil, Sylvia A1 - Plessen, Birgit A1 - Raab, Thomas A1 - Ruhtz, Thomas A1 - Sachs, Torsten A1 - Sommer, Michael A1 - Spengler, Daniel A1 - Stender, Vivien A1 - Stüve, Peter A1 - Wilken, Florian T1 - Interdisciplinary Geo-ecological Research across Time Scales in the Northeast German Lowland Observatory (TERENO-NE) T2 - Vadose Zone Journal Y1 - 2018 U6 - https://doi.org/10.2136/vzj2018.06.0116 SN - 1539-1663 VL - 17 IS - 1 SP - 1 EP - 25 ER - TY - CHAP A1 - Seifarth, Olaf A1 - Walczyk, Christian A1 - Lupina, Grzegorz A1 - Dabrowski, Jaroslaw A1 - Weidner, Günter A1 - Zaumseil, Peter A1 - Schmeißer, Dieter A1 - Storck, Peter A1 - Müssig, Hans-Joachim A1 - Schroeder, Thomas T1 - On the electronic and dielectric characterisation of thin cubic PrO2 layers on Silicon T2 - Verhandlungen der Deutschen Physikalischen Gesellschaft, Reihe 6, Bd. 43 N2 - For the integration of 100 % Ge onto the Si platform, a buffer oxide approach has been developed recently, using rare earth oxides to tune the lattice constant between the Si and the Ge. Among these buffer oxides, PrO2 is a prospective candidate with high quality crystalline growth on Si, moderated by an interfacial Pr-silicate between. In order to specify electronic properties of thin PrO2 and its interface on Si(111), especially the width of the band gap, we performed synchrotron radiation based XPS, UPS and XAS measurements at the U49/2 PGM 2 beamline at BESSY II and correlate the results with our structural characterisation performed by TEM and XRD. In order to evaluate the dielectric properties of thin PrO2 layers on Si(111), we performed temperature-, time-, voltage-, and layer thickness-dependent leakage current measurements (J-V). Here, we identified relaxation behaviour in the leakage current, successfully addressed to defect like states inside the Pr-silicate interface layer, corroborated by frequency dependent capacitance versus voltage (C-V) measurements. Y1 - 2008 UR - http://www.dpg-verhandlungen.de/year/2008/conference/berlin/part/df/session/12/contribution/6 SN - 0420-0195 SP - S. 196 PB - Deutsche Physikalische Gesellschaft CY - Bad Honnef ER - TY - GEN A1 - Lupina, Grzegorz A1 - Dabrowski, Jarek Marek A1 - Formanek, Peter A1 - Schmeißer, Dieter A1 - Sorge, Roland A1 - Wenger, Christian A1 - Zaumseil, Peter A1 - Müssig, Hans-Joachim T1 - Solid-state reaction between Pr and SiO2 studied by photoelectron spectroscopy and ab initio calculations T2 - Materials Science in Semiconductor Processing N2 - We report on the structural and electrical properties of Pr-based high-k dielectric films fabricated by solid-state reaction between metallic Pr and SiO2 underlayers. A non-destructive depth profiling using synchrotron radiation excited photoelectron spectroscopy (SR-PES), X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM) were employed to examine the chemical composition and microstructure. Ab initio calculations were done to gain insight into the physical processes involved. SR-PES results indicate that Pr deposition at room temperature (RT) leads to the formation of a Pr silicide and a Pr oxide, what is in good agreement with the scenario expected from ab initio calculations. As revealed by TEM and electrical measurements, oxidation of the reacted structures, followed by annealing, results in a stacked dielectric composed of a SiO2-based buffer with an enhanced permittivity and a Pr silicate film with a high dielectric constant. The leakage current density of 10-4 A/cm2 was measured for stacks with capacitance equivalent thickness (CET) of 1.5 nm prepared by evaporation of the Pr layer on a 1.8 nm SiO2 film, followed by oxidation in air ambient and annealing in N2 atmosphere. The capacitance-voltage (C-V) curves exhibit a large flatband voltage (VFB) shift indicating the presence of a positive charge in the stack. Switching away from the Al contacts to Au gate electrodes introduces a significant reduction of the VFB by 1.3 eV, what is much more than the change expected from the work function difference between Al and Au (not, vert, similar0.9 eV). This in turn implies that VFB is strongly affected by the gate interface electrode. KW - High-k dielectrics KW - Photoelectron spectroscopy KW - Interface reaction Y1 - 2004 SN - 1369-8001 VL - 7 IS - 4-6 SP - 215 EP - 220 ER - TY - GEN A1 - Müssig, Hans-Joachim A1 - Dabrowski, Jarek Marek A1 - Wenger, Christian A1 - Lupina, Grzegorz A1 - Sorge, Roland A1 - Formanek, Peter A1 - Zaumseil, Peter A1 - Schmeißer, Dieter T1 - Ultrathin Dielectric Films Grown by Solid Phase Reaction of Pr with SiO2 T2 - MRS Proceedings Y1 - 2004 SN - 1946-4274 VL - 811 ER - TY - GEN A1 - Lützner, Jörg A1 - Lange, Toni A1 - Schmitt, Jochen A1 - Kopkow, Christian A1 - Dreinhöfer, Karsten E A1 - Friederich, Niklaus F. A1 - Gravius, Sascha A1 - Heller, Karl-Dieter A1 - Hube, Robert A1 - Gromnica-Ihle, Erika A1 - Kirschner, Stephan A1 - Kladny, Bernd A1 - Kremer, Michael A1 - Linke, Maike A1 - Malzahn, Jürgen A1 - Sabatowski, Rainer A1 - Scharf, Hanns-Peter A1 - Stöve, Johannes A1 - Wagner, Richard A1 - Günther, Klaus-Peter T1 - [The S2k guideline: Indications for knee endoprosthesis : Evidence and consent-based indications for total knee arthroplasty] T2 - Der Orthopäde Y1 - 2018 U6 - https://doi.org/10.1007/s00132-018-3612-x SN - 1433-0431 SN - 0085-4530 VL - 47 IS - 9 SP - 777 EP - 781 ER - TY - CHAP A1 - Eberhard, Peter A1 - Bestle, Dieter T1 - Computer-Aided Optimization of Mechanical Systems Y1 - 2005 ER - TY - CHAP A1 - Dutta, Amit Kumar A1 - Flassig, Peter Michael A1 - Bestle, Dieter T1 - A Non-Dimensional Quasi-3D Blade Design approach with respect to Aerodynamic Criteria T2 - Proceedings of the ASME Turbo Expo 2008, presented at the 2008 ASME Turbo Expo, June 9 - 13, 2008, Berlin, Germany, Vol 6., Part C Y1 - 2008 SN - 978-0-7918-4316-1 SP - 2445 EP - 2455 PB - ASME CY - New York, NY ER - TY - CHAP A1 - Keskin, Akin A1 - Swoboda, Marius A1 - Flassig, Peter Michael A1 - Dutta, Amit Kumar A1 - Bestle, Dieter T1 - Accelerated Industrial Blade Design Based on Multi-Objective Optimization Using Surrogate Model Methodology T2 - Proceedings of the ASME Turbo Expo 2008, presented at the 2008 ASME Turbo Expo, June 9 - 13, 2008, Berlin, Germany, Vol 6., Part C KW - Optimization KW - Blade Design Y1 - 2008 SN - 978-0-7918-4316-1 SP - 2339 EP - 2349 PB - ASME CY - New York, NY ER - TY - CHAP A1 - Flassig, Peter Michael A1 - Bestle, Dieter T1 - Robust 2D Compressor Blading with respect to Measured Manufacturing Uncertainties Y1 - 2009 ER - TY - CHAP A1 - Bestle, Dieter A1 - Flassig, Peter Michael T1 - Optimal Aerodynamic Compressor Blade Design Considering Manufacturing Noise Y1 - 2010 ER -