TY - GEN A1 - Maldonado, D. A1 - Acal, C. A1 - Ortiz, H. A1 - Aguilera, A.M. A1 - Ruiz-Castro, J.E. A1 - Cantudo, A. A1 - Baroni, A. A1 - Dorai Swamy Reddy, K. A1 - Pechmann, S. A1 - Uhlmann, M. A1 - Wenger, Christian A1 - Pérez, E. A1 - Roldán, J.B. T1 - A comprehensive statistical study of the post-programming conductance drift in HfO2-based memristive devices T2 - Materials science in semiconductor processing N2 - The conductance drift in HfO2-based memristors is a critical reliability concern that impacts in their application in non-volatile memory and neuromorphic computing integrated circuits. In this work we present a comprehensive statistical analysis of the conductance drift behavior in resistive random access memories (RRAM) whose physics is based on valence change mechanisms. We experimentally characterize the conductance time evolution in six different resistance states and analyze the suitability of various probability distributions to model the observed variability. Our results reveal that the log-logistic probability distribution provides the best fit to the experimental data for the resistance multilevels and the measured post-programming times under consideration. Additionally, we employ an analysis of variance (ANOVA) to statistically analyze the post-programming time and current level effects on the observed variability. Finally, in the context of the Stanford compact model, we describe how variability has to be implemented to obtain the probability distribution of measured current values. KW - RRAM KW - Neural network KW - Variability Y1 - 2025 U6 - https://doi.org/10.1016/j.mssp.2025.109668 SN - 1369-8001 VL - 196 SP - 1 EP - 8 PB - Elsevier BV CY - Amsterdam ER - TY - GEN A1 - Maldonado, D. A1 - Reddy, K. Dorai Swamy A1 - Pechmann, S. A1 - Hagelauer, A. A1 - Wenger, Ch. A1 - Roldán, J.B. A1 - Pérez, E. T1 - Effects of the compliance current on the switching of HfO₂ and Al:HfO₂ memristive devices : characterization and modeling T2 - 2025 15th Spanish Conference on Electron Devices (CDE) N2 - Memristive devices based on HfO2 and Al:HfO2 dielectrics have been fabricated and characterized to investigate their resistive switching (RS) behavior. The study focuses on employing different values of gate voltage (VG) to tune the compliance current (Icc) across multiple one-transistor-one-resistor (1T1R) devices. Advanced parameter extraction techniques were applied to determine key RS parameters, specifically the set voltage (Vset) and reset voltage (Vreset). Additionally, the cumulative distribution function (CDF) for both Vset and Vreset was calculated for all devices to analyze and compare the cycle-to-cycle (C2C) variability of the two technologies. Finally, the Stanford model was utilized to reproduce the experimental measurements, offering insights into the differences in the shapes of the I-V curves for the HfO2 and Al:HfO2-based devices. KW - RRAM KW - Memristive device Y1 - 2025 SN - 979-8-3315-9618-7 U6 - https://doi.org/10.1109/CDE66381.2025.11038898 SP - 1 EP - 4 PB - Institute of Electrical and Electronics Engineers (IEEE) CY - Piscataway, NJ ER - TY - GEN A1 - Maldonado, D. A1 - Acal, C. A1 - Ortiz, H. A1 - Navas-Gomez, F. A1 - Cantudo, A. A1 - Wenger, Christian A1 - Pérez, Eduardo A1 - Roldán, J.B. T1 - Variability in HfO₂-based memristors under pulse operation T2 - Microelectronic engineering N2 - We have studied device-to-device variability in TiN/Ti/HfO2/TiN devices under pulse operation. We measured extensively memristive devices that are CMOS integrated with different pulse trains, changing the pulse width and amplitude for groups of more than one hundred devices. The statistical parameters of the measured current were extracted to better understand the device physics under the pulse operation regime. An analytical model to describe synaptic depression and potentiation behavior in the device conductance is introduced, it fits accurately the means of the current data for all the pulse trains under study. In addition, an explanation of the measurements is enlightened with kinetic Monte Carlo simulations that allow the study of resistive switching at the atomic level. Finally, the probability distribution functions of the measured currents in some of the pulses within the pulse series employed are analyzed to extract the probability distribution that works better. A proposal for the implementation of device-to-device variability in the Stanford models is introduced. KW - RRAM KW - Resistive switching memory KW - Variability KW - Distribution function KW - Pulse operation KW - Memristive device Y1 - 2026 U6 - https://doi.org/10.1016/j.mee.2026.112445 SN - 0167-9317 VL - 304 SP - 1 EP - 8 PB - Elsevier BV CY - Amsterdam ER -