TY - CHAP A1 - Stamenković, Zoran A1 - Tittelbach-Helmrich, Klaus A1 - Krstic, Milos A1 - Perez, J. A1 - Via, J. A1 - Ibáñez, Jesús T1 - Architecture of an Analog Combining MIMO System Compliant to IEEE 802.11a Y1 - 2009 ER - TY - JOUR A1 - Millán-Rodriguez, J. A1 - Pérez-García, C. A1 - Bestehorn, Michael A1 - Fantz, M. A1 - Friedrich, R. T1 - Pattern Formation in Convection of Rotating Fluids with Broken Vertical Symmetry Y1 - 1992 ER - TY - JOUR A1 - Millán-Rodriguez, J. A1 - Bestehorn, Michael A1 - Pérez-García, C. A1 - Friedrich, R. A1 - Neufeld, M. T1 - Defects Motion in Rotating Fluids Y1 - 1995 ER - TY - JOUR A1 - Millán-Rodriguez, J. A1 - Bestehorn, Michael A1 - Pérez-García, C. A1 - Neufeld, M. A1 - Friedrich, R. T1 - Motion of Defects in Rotating Fluids Y1 - 1994 ER - TY - GEN A1 - Maldonado, D. A1 - Acal, C. A1 - Ortiz, H. A1 - Aguilera, A.M. A1 - Ruiz-Castro, J.E. A1 - Cantudo, A. A1 - Baroni, A. A1 - Dorai Swamy Reddy, K. A1 - Pechmann, S. A1 - Uhlmann, M. A1 - Wenger, Christian A1 - Pérez, E. A1 - Roldán, J.B. T1 - A comprehensive statistical study of the post-programming conductance drift in HfO2-based memristive devices T2 - Materials science in semiconductor processing N2 - The conductance drift in HfO2-based memristors is a critical reliability concern that impacts in their application in non-volatile memory and neuromorphic computing integrated circuits. In this work we present a comprehensive statistical analysis of the conductance drift behavior in resistive random access memories (RRAM) whose physics is based on valence change mechanisms. We experimentally characterize the conductance time evolution in six different resistance states and analyze the suitability of various probability distributions to model the observed variability. Our results reveal that the log-logistic probability distribution provides the best fit to the experimental data for the resistance multilevels and the measured post-programming times under consideration. Additionally, we employ an analysis of variance (ANOVA) to statistically analyze the post-programming time and current level effects on the observed variability. Finally, in the context of the Stanford compact model, we describe how variability has to be implemented to obtain the probability distribution of measured current values. KW - RRAM KW - Neural network KW - Variability Y1 - 2025 U6 - https://doi.org/10.1016/j.mssp.2025.109668 SN - 1369-8001 VL - 196 SP - 1 EP - 8 PB - Elsevier BV CY - Amsterdam ER - TY - GEN A1 - Morales, Carlos A1 - Tschammer, Rudi A1 - Pożarowska, Emilia A1 - Kosto, Julia A1 - Villar‐Garcia, Ignacio J. A1 - Pérez‐Dieste, Virginia A1 - Favaro, Marco A1 - Starr, David E. A1 - Kapuścik, Paulina A1 - Mazur, Michał A1 - Wojcieszak, Damian A1 - Domaradzki, Jarosław A1 - Alvarado, Carlos A1 - Wenger, Christian A1 - Henkel, Karsten A1 - Flege, Jan Ingo T1 - Hydrogen sensing via heterolytic H₂ activation at room temperature by atomic layer deposited ceria T2 - ChemSusChem : chemistry, sustainability, energy, materials N2 - Ultrathin atomic layer deposited ceria films (<20 nm) are capable of H2 heterolytic activation at room temperature, undergoing a significant reduction regardless of the absolute pressure, as measured under in‐situ conditions by near ambient pressure X‐ray photoelectron spectroscopy. ALD‐ceria can gradually reduce as a function of H2 concentration under H2/O2 environments, especially for diluted mixtures below 10 %. At room temperature, this reduction is limited to the surface region, where the hydroxylation of the ceria surface induces a charge transfer towards the ceria matrix, reducing Ce4+ cations to Ce3+. Thus, ALD‐ceria replicates the expected sensing mechanism of metal oxides at low temperatures without using any noble metal decorating the oxide surface to enhance H2 dissociation. The intrinsic defects of the ALD deposit seem to play a crucial role since the post‐annealing process capable of healing these defects leads to decreased film reactivity. The sensing behavior was successfully demonstrated in sensor test structures by resistance changes towards low concentrations of H2 at low operating temperatures without using noble metals. These promising results call for combining ALD‐ceria with more conductive metal oxides, taking advantage of the charge transfer at the interface and thus modifying the depletion layer formed at the heterojunction. KW - Atomic Layer Deposition KW - Ceria KW - Hydrogen Sensing KW - X-Ray photoelectron spectroscopy KW - Raman spectroscopy KW - Resitive sensor Y1 - 2025 U6 - https://doi.org/10.1002/cssc.202402342 SN - 1864-5631 VL - 18 IS - 13 SP - 1 EP - 13 PB - Wiley-VCH CY - Weinheim ER - TY - GEN A1 - Chabbi, Abad A1 - Rumpel, C. A1 - Grootes, Pieter M. A1 - Gonzales-Perez, J. A. A1 - Delaune, R. D. A1 - Gonzales-Vila, F. A1 - Nixdorf, Brigitte A1 - Hüttl, Reinhard F. T1 - Lignite degradation and mineralization in lignite-containing mine sediment as revealed by 14C activity measurements and molecular analysis T2 - Organic Geochemistry Y1 - 2006 U6 - https://doi.org/10.1016/j.orggeochem.2006.02.002 SN - 0146-6380 VL - 37 IS - 8 SP - 957 EP - 976 ER - TY - GEN A1 - Maldonado, D. A1 - Reddy, K. Dorai Swamy A1 - Pechmann, S. A1 - Hagelauer, A. A1 - Wenger, Ch. A1 - Roldán, J.B. A1 - Pérez, E. T1 - Effects of the compliance current on the switching of HfO₂ and Al:HfO₂ memristive devices : characterization and modeling T2 - 2025 15th Spanish Conference on Electron Devices (CDE) N2 - Memristive devices based on HfO2 and Al:HfO2 dielectrics have been fabricated and characterized to investigate their resistive switching (RS) behavior. The study focuses on employing different values of gate voltage (VG) to tune the compliance current (Icc) across multiple one-transistor-one-resistor (1T1R) devices. Advanced parameter extraction techniques were applied to determine key RS parameters, specifically the set voltage (Vset) and reset voltage (Vreset). Additionally, the cumulative distribution function (CDF) for both Vset and Vreset was calculated for all devices to analyze and compare the cycle-to-cycle (C2C) variability of the two technologies. Finally, the Stanford model was utilized to reproduce the experimental measurements, offering insights into the differences in the shapes of the I-V curves for the HfO2 and Al:HfO2-based devices. KW - RRAM KW - Memristive device Y1 - 2025 SN - 979-8-3315-9618-7 U6 - https://doi.org/10.1109/CDE66381.2025.11038898 SP - 1 EP - 4 PB - Institute of Electrical and Electronics Engineers (IEEE) CY - Piscataway, NJ ER -