TY - JOUR A1 - Hoffmann, Patrick A1 - Schmeißer, Dieter A1 - Soinski, M. S. T1 - Promieniowanie synchrotronowe jako uniwersalne narzedzie badawcze - Proby jego wykorzystania w badaniach struktury zeliwa Y1 - 2004 ER - TY - JOUR A1 - Mikalo, Ricardo Pablo A1 - Appel, Günter A1 - Hoffmann, Patrick A1 - Schmeißer, Dieter T1 - Band Bending in Doped Conducting Polypyrrole Interaction with Silver Y1 - 2001 ER - TY - JOUR A1 - Schmeißer, Dieter A1 - Mikalo, Ricardo Pablo A1 - Hoffmann, Patrick A1 - Seyller, Th. A1 - Ley, L. A1 - Lloyd Spetz, Anita T1 - Oxide growth on SiC (0001) surfaces Y1 - 2001 ER - TY - JOUR A1 - Mikalo, Ricardo Pablo A1 - Hoffmann, Patrick A1 - Batchelor, David R. A1 - Schmeißer, Dieter A1 - Lloyd Spetz, Anita A1 - Lundström, Ingemar T1 - Comparison of HF and ozone treated SiC surfaces Y1 - 2001 ER - TY - CHAP A1 - Hoffmann, Patrick A1 - Mikalo, Ricardo Pablo A1 - Batchelor, David R. A1 - Beuckert, Guido A1 - Schmeißer, Dieter A1 - Kittler, Martin A1 - Ourmazd, A. A1 - Lewerenz, Hans-Joachim T1 - Solare Energieumwandlung in dünnen Schichten Y1 - 2000 ER - TY - JOUR A1 - Mikalo, Ricardo Pablo A1 - Appel, Günter A1 - Hoffmann, Patrick A1 - Schmeißer, Dieter A1 - Mast, M. T1 - Multi-Atom Resonant Photoemission applied to study the silver to nitrogen interaction in polypyrrole films Y1 - 2000 ER - TY - JOUR A1 - Hoffmann, Patrick A1 - Schmeißer, Dieter A1 - Klein, A. A1 - Jaegermann, Wolfram A1 - Pettenkofer, Christian A1 - Follath, Rolf T1 - Spectro-Microscopy with PEEM / µESCA Y1 - 2000 ER - TY - CHAP A1 - Hoffmann, Patrick A1 - Batchelor, David R. A1 - Schmeißer, Dieter T1 - Spectro-Microscopic analyses in metallurgical systems: spheroidic graphite in cast iron and the interface of friction-welded Al-Fe joints Y1 - 2000 ER - TY - JOUR A1 - Schmeißer, Dieter A1 - Appel, Günter A1 - Böhme, O. A1 - Heller, Thomas A1 - Mikalo, Ricardo Pablo A1 - Hoffmann, Patrick A1 - Batchelor, David R. T1 - Nanoparticles and polarons: active centers in thin film sensor devices Y1 - 2000 ER - TY - JOUR A1 - Mikalo, Ricardo Pablo A1 - Hoffmann, Patrick A1 - Heller, Thomas A1 - Batchelor, David R. A1 - Appel, Günter A1 - Schmeißer, Dieter T1 - Doping and defect inhomogeneities of polypyrrole tosylate films as revealed by ?-NEXAFS Y1 - 1999 ER - TY - JOUR A1 - Hoffmann, Patrick A1 - Mikalo, Ricardo Pablo A1 - Schmeißer, Dieter A1 - Kittler, Martin T1 - A spectro-microscopic approach to study the morphology and elemental distribution of mc-Si surfaces Y1 - 1999 ER - TY - JOUR A1 - Mikalo, Ricardo Pablo A1 - Hoffmann, Patrick A1 - Böhme, O. A1 - Schmeißer, Dieter T1 - Doping inhomogenities in Polypyrrole films: a Photoemission Electron Microscope (PEEM) and Spectro-Microscopic Study Y1 - 1998 ER - TY - JOUR A1 - Mikalo, Ricardo Pablo A1 - Hoffmann, Patrick A1 - Heller, Thomas A1 - Schmeißer, Dieter T1 - Lateral Doping Inhomogeneities as Revealed by ?-NEXAFS and ?-PES Y1 - 1998 ER - TY - GEN A1 - Hoffmann, Patrick A1 - Schmeißer, Dieter T1 - Improvement of Nitrogen Incorporation into Oxynitrides on 4H-SiC(0001) T2 - Nuclear Instruments and Methods in Physics Research, Section B : Beam with Materials and Atoms Y1 - 2006 VL - 246 IS - 1 SP - 85 EP - 89 ER - TY - JOUR A1 - Wehner, Stefan A1 - Schmeißer, Dieter A1 - Hoffmann, Patrick T1 - Spatiotemporal patterns of external noise-induced transitions in a bistable reaction-diffusion system : Photoelectron Emission Microscopy experiments and modeling Y1 - 2005 ER - TY - JOUR A1 - Hoffmann, Patrick T1 - Chemical state depth profiling of ultra-thin oxynitride layers by photoelectron spectroscopy Y1 - 2004 ER - TY - GEN A1 - Lewerenz, Hans-Joachim A1 - Murrell, Chris A1 - Jakubowicz, J. A1 - Aggour, Mohammed A1 - Kanis, M. A1 - Campbell, S. A. A1 - Cox, P. A. A1 - Hoffmann, Patrick A1 - Jungblut, H. A1 - Schmeißer, Dieter T1 - High Resolution Surface analysis of Si Roughenning in Dilute Ammonium Fluoride Solution T2 - Journal of Electroanalytical Chemistry N2 - The initial stages of porous Si formation on Si(111) in dilute ammonium fluoride solution are analysed by photoelectron spectroscopy using synchrotron radiation (SRPES). The PES results in the por-Si formation regime partly support a recent dissolution model. The contribution from the Si 2p surface core level shift shows that 0.35 ML of the surface is still H-terminated after interruption of the conditioning process at the first photocurrent maximum. Two signals shifted in binding energy by 0.8 and 1 eV, respectively, are attributed to reaction intermediates expected from the proposed reaction mechanism and from theoretical calculations using density functional theory (DFT). A distinct roughening is found in in-situ AFM measurements, with a calculated RMS roughness parameter of 2.6 nm. KW - Porous Si KW - transistors KW - Electropolishing KW - Photoelectron spectroscopy KW - AFM KW - Synchrotron radiation Y1 - 2003 SN - 1873-2569 VL - 540 SP - 3 EP - 6 ER - TY - GEN A1 - Lewerenz, Hans-Joachim A1 - Aggour, Mohammed A1 - Murrell, Chris A1 - Kanis, M. A1 - Hoffmann, Patrick A1 - Jungblut, H. A1 - Schmeißer, Dieter T1 - Interface engineering of photoelectrochemically prepared Si surfaces N2 - The oxide of Si(111) formed by electropolishing in dilute ammonium fluoride solution is analysed by photoelectron spectroscopy using synchrotron radiation. The oxidiclayer is about 3.1 nm thick and contains Si-F-x species as well as oxyfluorides. The oxyfluorides are found preferentially at the electropolishing layer surface. SiOHspecies are concentrated at the oxidic film/substrate interface. The full width half maximum of the Si 2p line indicates that the Si/electropolishing oxide interface issmoother than the Si/natural oxide interface. KW - Mean Free Paths KW - Silicon KW - Range Y1 - 2002 ER - TY - THES A1 - Hoffmann, Patrick T1 - Untersuchungen zu Inhomogenitäten an der Halbleitergrenzfläche Silizium-Siliziumoxynitrid KW - Grenzflächeneigenschaften KW - SiO2 KW - SiON KW - Synchrotron-basierte Röntgen-Spektroskopie KW - XPS KW - XAS Y1 - 2003 SN - 3-8322-1982-X PB - Shaker-Verlag CY - Aachen ER - TY - JOUR A1 - Sieber, N. A1 - Seyller, Th. A1 - Graupner, R. A1 - Ley, L. A1 - Mikalo, Ricardo Pablo A1 - Hoffmann, Patrick A1 - Batchelor, David R. A1 - Schmeißer, Dieter T1 - Wet-chemical preparation of silicate adlayer reconstructed SiC(0001) surfaces as studied by PIES and LEED N2 - We have studied the surface chemistry of 6H-SiC(0001) and 6H-SiC (000 (1) over bar) after wet-chemical treatment using photoelectron spectroscopy (PES) andlow-energy electron diffraction (LEED). The origin of chemically shifted components in the Si2p and C1s spectra is discussed in the light of previous studies onwet-chemically prepared surfaces and on silicate adlayer reconstructed surfaces. On 6H-SiC(0001) an ordered silicate adlayer was prepared by etching the surface withsulfuric acid based agents. KW - Core level KW - Photoelectron spectroscopy KW - Synchrotron radiation KW - Wet-chemical preparation OXIDE Y1 - 2002 ER -