TY - GEN A1 - Baki, Aykut A1 - Abdeldayem, Mohamed A1 - Morales, Carlos A1 - Flege, Jan Ingo A1 - Klimm, Detlef A1 - Bierwagen, Oliver A1 - Schwarzkopf, Jutta T1 - Potential of La-Doped SrTiO3 Thin Films Grown by Metal–Organic Vapor Phase Epitaxy for Thermoelectric Applications T2 - Crystal Growth & Design N2 - La-doped SrTiO3 thin films with high structural quality were homoepitaxially grown by the metal–organic vapor phase epitaxy (MOVPE) technique. Thermogravimetric characterization of the metal–organic precursors determines suitable flash evaporator temperatures for transferring the liquid source materials in the gas phase of the reactor chamber. An adjustment of the charge carrier concentration in the films, which is necessary for optimizing the thermoelectric power factor, was performed by introducing a defined amount of the metal–organic compound La(tmhd)3 and tetraglyme to the liquid precursor solution. X-ray diffraction and atomic force microscopy verified the occurrence of the pure perovskite phase exhibiting a high structural quality for all La concentrations. The electrical conductivity of the films obtained from Hall-effect measurements increases linearly with the La concentration in the gas phase, which is attributed to the incorporation of La3+ ions on the Sr2+ perovskite sites by substitution inferred from photoemission spectroscopy. The resulting structural defects were discussed concerning the formation of occasional Ruddlesden–Popper-like defects. The thermoelectric properties determined by Seebeck measurements demonstrate the high potential of SrTiO3 thin films grown by MOVPE for thermoelectric applications. KW - metal−organic vapor phase epitaxy (MoVPE) KW - SrTiO2 KW - La doping KW - X-ray diffraction (XRD) KW - atomicforce microscopy (AFM) KW - photoemissionspectroscopy KW - Seebeck measurements KW - electrical conductivity Y1 - 2023 U6 - https://doi.org/10.1021/acs.cgd.2c01438 SN - 1528-7483 SN - 1528-7505 VL - 23 IS - 4 SP - 2522 EP - 2530 ER -