TY - CHAP A1 - Vyvenko, Oleg F. A1 - Krüger, O. A1 - Kittler, Martin T1 - Temperature-dependent Cross-sectional EBIC Study of Hydrogen Passivation of Defects in mc-Si Y1 - 2001 ER - TY - JOUR A1 - Kittler, Martin A1 - Yu, Xuegong A1 - Vyvenko, Oleg F. A1 - Birkholz, Mario A1 - Seifert, Winfried A1 - Reiche, Manfred A1 - Wilhelm, T. A1 - Arguirov, Tzanimir V. A1 - Wolff, A. A1 - Fritzsche, W. A1 - Seibt, M. T1 - Self-organized pattern formation of biomolecules at Si surfaces: Intended application of a dislocation network Y1 - 2006 ER - TY - GEN A1 - Kittler, Martin A1 - Yu, Xuegong A1 - Mtchedlidze, T. A1 - Arguirov, Tzanimir V. A1 - Vyvenko, Oleg F. A1 - Seifert, Winfried A1 - Reiche, Manfred A1 - Wilhelm, T. A1 - Seibt, M. A1 - Voss, O. A1 - Wolff, A. A1 - Fritzsche, W. T1 - Regular dislocation networks in silicon as a tool for nanostructures devices used in optics, biology and electronics Y1 - 2007 ER - TY - JOUR A1 - Kittler, Martin A1 - Arguirov, Tzanimir V. A1 - Mtchedlidze, T. A1 - Seifert, Winfried A1 - Vyvenko, Oleg F. A1 - Wilhelm, T. A1 - Yu, Xuegong T1 - Dislocations in silicon as a tool to be used in optics, electronics and biology Y1 - 2008 ER - TY - JOUR A1 - Ratzke, Markus A1 - Yu, Xuegong A1 - Vyvenko, Oleg F. A1 - Reif, Jürgen A1 - Kittler, Martin A1 - Reiche, Manfred T1 - Scanning Probe studies of the electrical activity at interfaces formed by silicon wafer direct bonding JF - Physica Status Solidi C Y1 - 2007 SN - 1610-1634 VL - 4 IS - 8 SP - 2893 EP - 3897 ER - TY - JOUR A1 - Yu, Xuegong A1 - Vyvenko, Oleg F. A1 - Seifert, Winfried A1 - Arguirov, Tzanimir V. A1 - Wilhelm, T. A1 - Reiche, Manfred T1 - Luminescence of dislocation network in directly bonded silicon wafers Y1 - 2007 ER - TY - CHAP A1 - Arguirov, Tzanimir V. A1 - Kittler, Martin A1 - Oehme, Michael A1 - Abrosimov, Nikolay V. A1 - Vyvenko, Oleg F. A1 - Kasper, Erich A1 - Schulze, Jörg T1 - Luminescence from Germanium and Germanium on Silicon T2 - Gettering and defect engineering in semiconductor technology XV, selected papers from the 15th Gettering and Defect Engineering in Semiconductor Technology Conference, September 22 - 27, 2013, Oxford, UK Y1 - 2014 U6 - https://doi.org/10.4028/www.scientific.net/SSP.205-206.383 SN - 1662-9779 SP - 383 EP - 393 PB - Trans Tech Publ. CY - Durnten-Zurich [u.a.] ER - TY - JOUR A1 - Kittler, Martin A1 - Seifert, Winfried A1 - Yu, Xuegong A1 - Jia, G. A1 - Vyvenko, Oleg F. A1 - Mtchedlidze, T. A1 - Reiche, Manfred A1 - Sha, J. A1 - Yang, D. A1 - Arguirov, Tzanimir V. T1 - Silicon naostructures for IR light emitters JF - Materials Sience and Engineering C Y1 - 2007 SN - 1873-0191 VL - 27 IS - 5-8 SP - 1252 EP - 1259 ER - TY - GEN A1 - Trushin, Maxim A1 - Varlamov, A. A1 - Loshachenko, A. A1 - Vyvenko, Oleg F. A1 - Kittler, Martin T1 - Combined DLTS/MCTS investigations of deep electrical levels of regular dislocation networks in silicon T2 - Journal of Physics: Conference Series N2 - Local electronic states of regular dislocation networks produced by n- and p-type silicon wafer bonding with different screw dislocation density were studied with deep-level transient spectroscopy (DLTS) and minority carrier transient spectroscopy (MCTS). A drastic sadden changes of the electric level spectrum with increasing of dislocation density from two shallow bands located near the edges of valence and conduction bands towards two deep bands with energy positions about Ec - (0.22-0.26) eV and Ev + (0.4-0.53) eV were found. The origin of the electric level spectrum changes is ascribed to the changes of dislocation core structure from dissociated to perfect ones that occur when interdislocation distances became comparable with the dislocation equilibrium dissociation width. The obtained results correlate well with the results of recent studies of recombination activity of grain boundaries in mc-Si. Y1 - 2019 U6 - https://doi.org/10.1088/1742-6596/1190/1/012005 SN - 1742-6596 SN - 1742-6588 VL - 1190 IS - 1 ER - TY - JOUR A1 - Vyvenko, Oleg F. A1 - Krüger, O. A1 - Kittler, Martin T1 - Depth Profiling of the Recombination Activity of Defects Measured by Temperature-dependent Cross-sectional EBIC Y1 - 2001 ER -