TY - JOUR A1 - Torche, Mohamed T1 - The interaction of titanium to Pr2O3 thin films dielectrics Y1 - 2005 ER - TY - GEN A1 - Henkel, Karsten A1 - Sohal, Rakesh A1 - Torche, Mohamed A1 - Paloumpa, Ioanna A1 - Müller, Klaus A1 - Hoffmann, Patrick A1 - Schmeißer, Dieter T1 - Grenzflächenoptimierung für funktionale Dünnschichtsysteme: Oxide und Polymere T2 - Forum der Forschung Y1 - 2005 SN - 0947-6989 VL - 9 IS - 18 SP - 49 EP - 56 ER - TY - CHAP A1 - Sohal, Rakesh A1 - Torche, Mohamed A1 - Schmeißer, Dieter T1 - Al-Oxynitrides as a Buffer Layer for Pr2O3/SiC Interfaces Y1 - 2006 ER - TY - JOUR A1 - Torche, Mohamed A1 - Henkel, Karsten A1 - Schmeißer, Dieter T1 - The interaction of Al, Ag, Au and Ti to Pr2O3 thin film dielectrics KW - thin films KW - Pr2O3 Y1 - 2006 ER - TY - JOUR A1 - Henkel, Karsten A1 - Sohal, Rakesh A1 - Schmeißer, Dieter A1 - Schwiertz, Carola A1 - Burkov, Yevgen A1 - Torche, Mohamed T1 - Al-oxynitride buffer layer facilities for PrOx/SiC interfaces Y1 - 2007 ER - TY - GEN A1 - Henkel, Karsten A1 - Torche, Mohamed A1 - Sohal, Rakesh A1 - Karavaev, Konstantin A1 - Burkov, Yevgen A1 - Schwiertz, Carola A1 - Schmeißer, Dieter T1 - Pr-O-Al-N dielectrics for metal insulator semiconductor stacks KW - semiconductor KW - dielectric Y1 - 2011 ER - TY - GEN A1 - Henkel, Karsten A1 - Burkov, Yevgen A1 - Karavaev, Konstantin A1 - Torche, Mohamed A1 - Schwiertz, Carola A1 - Schmeißer, Dieter T1 - Optimization of the AION buffer layer for PrxOy/Si stacks KW - AION buffer Y1 - 2009 ER - TY - CHAP A1 - Henkel, Karsten A1 - Burkov, Yevgen A1 - Bergholz, Matthias A1 - Karavaev, Konstantin A1 - Sohal, Rakesh A1 - Torche, Mohamed A1 - Schmeißer, Dieter T1 - Al-Oxynitride as a buffer layer for high-k dielectrics T2 - Proceedings of 15th Workshop on Dielectrics in Microelectronics, Bad Saarow, 23 - 25 June 2008, Bad Saarow (Berlin) KW - buffer layer KW - high-k KW - dielectric Y1 - 2008 SP - 161 EP - 162 ER - TY - JOUR A1 - Henkel, Karsten A1 - Karavaev, Konstantin A1 - Torche, Mohamed A1 - Schwiertz, Carola A1 - Burkov, Yevgen A1 - Schmeißer, Dieter T1 - Al-Oxyxynitride interfacial layer investigations for PrXOY on SiC and Si Y1 - 2008 ER - TY - CHAP A1 - Henkel, Karsten A1 - Torche, Mohamed A1 - Sohal, Rakesh A1 - Schwiertz, Carola A1 - Hoffmann, Patrick A1 - Schmeißer, Dieter ED - Dudley, Michael T1 - Pr-O-N Dielectrics for MIS Stacks on Silicon and Silicon Carbide Surfaces T2 - Silicon carbide 2006 - materials, processing and devices, symposium held April 18 - 20, 2006, San Francisco, California, U.S.A. Y1 - 2006 SN - 978-1-55899-867-4 SP - 353 EP - 358 PB - Materials Research Society CY - Warrendale, Pa. ER - TY - THES A1 - Torche, Mohamed T1 - Praseodymium oxide as dielectric in MIS stacks KW - high-k KW - Pr2O3 KW - X-ray photoelectron spectroscopy KW - XPS Y1 - 2006 CY - Cottbus ER - TY - CHAP A1 - Henkel, Karsten A1 - Sohal, Rakesh A1 - Torche, Mohamed A1 - Schwiertz, Carola A1 - Burkov, Yevgen A1 - Schmeißer, Dieter T1 - PrOx/AlON stacks as a high-k candidate on SiC T2 - Verhandlungen der Deutschen Physikalischen Gesellschaft ; Reihe 6, Bd. 42 N2 - We study the chemical stability and electrical properties of Pr-oxides-SiC MIS stacks. In MISFET devices for high power applications the electric field scaling at the interface between semiconductor and insulator is determined by the ratio of their permittivity values. A high-k material can be used to optimize the performance of such devices. In previous studies we had to understand that the chemical reactivity of the PrOx/SiC interface causes a destructive interaction yielding silicate and graphite formation as well as poor electrical performance after direct deposition of PrOx onto SiC. Therefore we introduced an additional chemically inert layer and in this contribution we focus on PrOx/AlON as a suitable insulator stack. In our spectroscopic investigations we recognized a stable AlON/3C-SiC interface even for annealing steps up to 900∘C. First electrical characterizations are performed on Si substrates and we find a strong improvement in the leakage current by several orders of magnitude down to values of 10−7 A/cm2 at an EOT of 4nm and interface state densities of mean values of 5*1011/eVcm2. We also report on our ongoing electrical characterization of such stacks on SiC substrates. This work is supported by Deutsche Forschungsgemeinschaft within priority program 1157 (DSCH 745/9-2). Y1 - 2007 UR - http://www.dpg-verhandlungen.de/year/2007/conference/regensburg/part/df/session/10/contribution/8 SN - 0420-0195 SP - S. 215 PB - Deutsche Physikalische Gesellschaft CY - Bad Honnef ER - TY - CHAP A1 - Henkel, Karsten A1 - Torche, Mohamed A1 - Schwiertz, Carola A1 - Paloumpa, Ioanna A1 - Sohal, Rakesh A1 - Müller, Klaus A1 - Schmeißer, Dieter T1 - Inorganic and organic layers for high-k and organic memory applications T2 - Verhandlungen der Deutschen Physikalischen Gesellschaft, Reihe 6, Bd. 41 N2 - We report about organic and inorganic MIS stacks for new possibilities for high frequency and high power applications as well as for non volatile memory cell. The organic stack contains a ferroelectric polymer as the functional layer. Poly[vinylidene fluoride trifluoroethylene] (P[VDF/TrFE]) is spin coated from a solution onto oxidised silicon substrates. We report on the polarisation induced flatband voltage shifts. For the inorganic stack our attempt is to combine higk-k dielectrics with high band gap semiconductors (SiC). Praseodymium oxide layers are prepared by electron beam evaporation from Pr6O11 powder and in situ controlling of interface and volume composition (XPS). Praseodymium silicate layers were prepared either by metal evaporation onto a thin ox- ide on top of the semiconductor and following annealing steps or by a wet chemical process out of aqueous Pr(NO3)3 solutions. Using spectro-scopic characterisation we investigate the stability of the various inter-faces within the stacks as well as the reactivity of the metal electrodes on thin Pr2O3. We report the results of electrical characterisation consisting of permittivity values, leakage current and density of interface states. Y1 - 2006 UR - http://www.dpg-verhandlungen.de/year/2006/conference/dresden/part/df/session/1/contribution/4 SN - 0420-0195 SP - S. 127 PB - Deutsche Physikalische Gesellschaft CY - Bad Honnef ER - TY - CHAP A1 - Torche, Mohamed A1 - Müller, Klaus A1 - Henkel, Karsten A1 - Lupina, Grzegorz A1 - Goryako, Andrey A1 - Wollweber, Jürgen A1 - Schmeißer, Dieter T1 - Investigations of 3C-SiC growth on Si (001) T2 - Verhandlungen der Deutschen Physikalischen Gesellschaft N2 - Carbide was grown on Si (001) - substrates with supply of C2H2. Investigation of the interface Si/SiC (buffer layer) is essential for optimized preparation conditions, leading to a high quality of the growing SiC crystal. In addition to the lattice mismatch of 20 per cent between Si and SiC, which causes defects like dislocations or stacking faults, the chemical homogeneity of this layer is important. XPS was used to characterize the first state of SiC crystal growth on the Si substrate. Carbonizing with C2H2 leads to surface reactions which build up the buffer layer. By using electron spectroscopy, it was possible to characterize the SiC/Si (001) buffer layer, depending on the following reaction parameters: Tsubstrate , PC2H2 , PH2 , the ratio of pressures and the reaction time. The measurements were performed in terms of the content of carbide, oxide and roughness/etching-efficiency (Profilometer) for the reaction parameters above. We found, that the most critical parameter is the temperature of the substrate (Tsubstrate). KW - 3C-SiC KW - chemical vapor deposition (CVD) KW - X-ray photoelectron spectroscopy (XPS) Y1 - 2004 UR - http://www.dpg-verhandlungen.de/year/2004/conference/regensburg/part/hl/session/44/contribution/42?lang=de PB - Deutsche Physikalische Gesellschaft CY - Bad Honnef ER - TY - CHAP A1 - Torche, Mohamed A1 - Schmeißer, Dieter T1 - The interaction of Al, Au, Ag, and Ti metal contacts with Pr2O3 thin films T2 - Verhandlungen der Deutschen Physikalischen Gesellschaft N2 - Pr2O3 is one of the promising high-k oxides desirable to replace SiO2 for the sub-100nm field-effect transistors (FETs) and dynamic random access memory (DRAM) capacitors. Here we focus on the metallic contacts used for the MOS and MIM based structures. With the thickness of Pr2O3 being around 3nm the metal interaction is crucial to avoid a reduction of the dielectric properties by metal percolation, crack filling or diffusion processes. We use XPS and SRPS to study the initial interaction as well as the thermal stability of metals (Al, Ag, Au, and Ti) on Pr2O3 films. We show that Al, Ag, Au form initial metallic layer which react already at temperatures around 300∘C. In contrast, Ti is found to be more stable than the other metals. We determine the formation of Ti-oxides at the Ti / Pr2O3 interface and its thermal stability. Ti is found to build a good diffusion barrier between the oxide and the metal. KW - high-k KW - Pr2O3 KW - X-ray photoelectron spectroscopy (XPS) KW - Al, Ag, Au, and Ti electrodes KW - metal dielectric interaction Y1 - 2005 UR - http://www.dpg-verhandlungen.de/year/2005/conference/berlin/part/ds/session/11/contribution/4?lan=en PB - Deutsche Physikalische Gesellschaft CY - Bad Honnef ER -