TY - GEN A1 - Sowinska, Małgorzata A1 - Bertaud, Thomas A1 - Walczyk, Damian A1 - Thiess, Sebastian A1 - Schubert, Markus Andreas A1 - Lukosius, Mindaugas A1 - Drube, W. A1 - Walczyk, Christian A1 - Schröder, Thomas T1 - Hard X-ray Photoelectron Spectroscopy study of the electroforming in Ti/HfO2-based resistive switching structures T2 - Applied Physics Letters Y1 - 2012 SN - 0003-6951 VL - 100 IS - 23 SP - 233509 EP - 233514 ER - TY - GEN A1 - Lukosius, Mindaugas A1 - Lippert, Gunther A1 - Dabrowski, Jarek Marek A1 - Kitzmann, Julia A1 - Lisker, Marco A1 - Kulse, Philipp A1 - Krüger, Andreas A1 - Fursenko, Oksana A1 - Costina, Ioan A1 - Trusch, Andreas A1 - Yamamoto, Yuji A1 - Wolff, Andre A1 - Mai, Andreas A1 - Schröder, Thomas T1 - Graphene Synthesis and Processing on Ge Substrates T2 - ECS transactions Y1 - 2016 U6 - https://doi.org/10.1149/07508.0533ecst SN - 1938-6737 SN - 1938-5862 VL - 75 IS - 8 SP - 533 EP - 540 ER - TY - GEN A1 - Lukosius, Mindaugas A1 - Dabrowski, Jarek Marek A1 - Lisker, Marco A1 - Kitzmann, Julia A1 - Schulze, Sebastian A1 - Lippert, Gunther A1 - Fursenko, Oksana A1 - Yamamoto, Yuji A1 - Schubert, Markus Andreas A1 - Krause, Hans-Michael A1 - Wolff, Andre A1 - Mai, A. A1 - Schröder, Thomas A1 - Lupina, Grzegorz T1 - Metal-free, CVD Graphene synthesis on 200 mm Ge / Si(001) substrates T2 - ACS Applied Materials and Interfaces Y1 - 2016 U6 - https://doi.org/10.1021/acsami.6b11397 SN - 1944-8244 SN - 1944-8252 VL - 8 IS - 49 SP - 33786 EP - 33793 ER - TY - GEN A1 - Akhtar, Fatima A1 - Dabrowski, Jaroslaw A1 - Lukose, Rasuole A1 - Wenger, Christian A1 - Lukosius, Mindaugas T1 - Chemical Vapor Deposition Growth of Graphene on 200 mm Ge (110)/Si Wafers and Ab Initio Analysis of Differences in Growth Mechanisms on Ge (110) and Ge (001) T2 - ACS Applied Materials & Interfaces N2 - For the fabrication of modern graphene devices, uniform growth of high-quality monolayer graphene on wafer scale is important. This work reports on the growth of large-scale graphene on semiconducting 8 inch Ge(110)/Si wafers by chemical vapor deposition and a DFT analysis of the growth process. Good graphene quality is indicated by the small FWHM (32 cm–1) of the Raman 2D band, low intensity ratio of the Raman D and G bands (0.06), and homogeneous SEM images and is confirmed by Hall measurements: high mobility (2700 cm2/Vs) and low sheet resistance (800 Ω/sq). In contrast to Ge(001), Ge(110) does not undergo faceting during the growth. We argue that Ge(001) roughens as a result of vacancy accumulation at pinned steps, easy motion of bonded graphene edges across (107) facets, and low energy cost to expand Ge area by surface vicinals, but on Ge(110), these mechanisms do not work due to different surface geometries and complex reconstruction. KW - Graphene KW - Chemical Vapor Deposition Y1 - 2023 U6 - https://doi.org/10.1021/acsami.3c05860 SN - 1944-8244 VL - 15 IS - 30 SP - 36966 EP - 36974 ER - TY - GEN A1 - Capista, Daniele A1 - Lukose, Rasuole A1 - Majnoon, Farnaz A1 - Lisker, Marco A1 - Wenger, Christian A1 - Lukosius, Mindaugas T1 - Study on the metal -graphene contact resistance achieved with one -dimensional contact architecture T2 - IEEE Nanotechnology Materials and Devices Conference (NMDC 2023), Paestum, Italy, 22-25 October 2023 N2 - Graphene has always been considered as one of the materials with the greatest potential for the realization of improved microelectronic and photonic devices. But to actually reach its full potential in Si CMOS technology, graphene -based devices need to overcome different challenges. They do not only need to have better performances than standard devices, but they also need to be compatible with the production of standard Si based devices. To address the first challenge the main route requires the optimization of the contact resistance, that highly reduces the devices performance, while the second challenges requires the integration of graphene inside the standard production lines used for microelectronic. In this work we used an 8” wafer pilot -line to realize our devices and we studied the behavior of the contact resistance between metal and graphene obtained by one -dimensional contact architecture between the two materials. The contact resistance has been measured by means of Transmission Line Method (TLM) with several contact patterning. KW - Graphene Y1 - 2023 SN - 979-8-3503-3546-0 U6 - https://doi.org/10.1109/NMDC57951.2023.10343775 SP - 118 EP - 119 PB - Institute of Electrical and Electronics Engineers (IEEE) ER - TY - GEN A1 - Lukosius, Mindaugas A1 - Lukose, Rasuolė A1 - Lisker, Marco A1 - Dubey, P. K. A1 - Raju, A. I. A1 - Capista, Daniele A1 - Majnoon, Farnaz A1 - Mai, A. A1 - Wenger, Christian T1 - Developments of Graphene devices in 200 mm CMOS pilot line T2 - Proc. Nanotechnology Materials and Devices Conference (NMDC 2023),Paestum, Italy, 22-25 October 2023 N2 - Due to the unique electronic band structure, graphene has opened great potential to extend the functionality of a large variety of devices. Despite the significant progress in the fabrication of various graphene based microelectronic devices, the integration of graphene devices still lack the stability and compatibility with Si-technology processes. Therefore, the investigation and preparation of graphene devices in conditions resembling as close as possible the Si technology environment is of highest importance. This study aims to explore various aspects of graphene research on a 200mm pilot line, with a focus on simulations and fabrication of graphene modulator. To be more precise, it includes design and fabrication of the layouts, necessary mask sets, creation of the flows, fabrication, and measurements of the Gr modulators on 200 mm wafers. KW - Graphene Y1 - 2023 SN - 979-8-3503-3546-0 U6 - https://doi.org/10.1109/NMDC57951.2023.10343569 SP - 505 EP - 506 PB - Institute of Electrical and Electronics Engineers (IEEE) ER - TY - GEN A1 - Franck, Max A1 - Dabrowski, Jaroslaw A1 - Schubert, Markus Andreas A1 - Wenger, Christian A1 - Lukosius, Mindaugas T1 - Towards the Growth of Hexagonal Boron Nitride on Ge(001)/Si Substrates by Chemical Vapor Deposition T2 - Nanomaterials N2 - The growth of hexagonal boron nitride (hBN) on epitaxial Ge(001)/Si substrates via high-vacuum chemical vapor deposition from borazine is investigated for the first time in a systematic manner. The influences of the process pressure and growth temperature in the range of 10−7–10−3 mbar and 900–980 °C, respectively, are evaluated with respect to morphology, growth rate, and crystalline quality of the hBN films. At 900 °C, nanocrystalline hBN films with a lateral crystallite size of ~2–3 nm are obtained and confirmed by high-resolution transmission electron microscopy images. X-ray photoelectron spectroscopy confirms an atomic N:B ratio of 1 ± 0.1. A three-dimensional growth mode is observed by atomic force microscopy. Increasing the process pressure in the reactor mainly affects the growth rate, with only slight effects on crystalline quality and none on the principle growth mode. Growth of hBN at 980 °C increases the average crystallite size and leads to the formation of 3–10 well-oriented, vertically stacked layers of hBN on the Ge surface. Exploratory ab initio density functional theory simulations indicate that hBN edges are saturated by hydrogen, and it is proposed that partial de-saturation by H radicals produced on hot parts of the set-up is responsible for the growth KW - Boron nitride KW - 2d materials KW - Chemical vapour deposition Y1 - 2022 U6 - https://doi.org/10.3390/nano12193260 SN - 2079-4991 VL - 12 IS - 19 ER - TY - GEN A1 - Lukosius, Mindaugas A1 - Lukose, Rasuolė A1 - Lisker, Marco A1 - Luongo, G. A1 - Elviretti, M. A1 - Mai, Andreas A1 - Wenger, Christian T1 - Graphene Research in 200 mm CMOS Pilot Line T2 - 45th Jubilee International Convention on Information, Communication and Electronic Technology (MIPRO), 2022 N2 - Due to the unique electronic structures, graphene and other 2D Materials are considered as materials which can enable and extend the functionalities and performance in a large variety of applications, among them in microelectronics. At this point, the investigation and preparation of graphene devices in conditions resembling as close as possible the Si technology environment is of highest importance.Towards these goals, this paper focuses on the full spectra of graphene research aspects in 200mm pilot line. We investigated different process module developments such as CMOS compatible growth of high quality graphene on germanium and its growth mechanisms, transfer related challenges on target substrates, patterning, passivation and various concepts of contacting of graphene on a full 200 mm wafers. Finally, we fabricated proof-of-concept test structures e.g. TLM, Hall bars and capacitor structures to prove the feasibility of graphene processing in the pilot line of IHP. KW - Graphene KW - CMOS Y1 - 2022 SN - 978-953-233-103-5 SN - 978-953-233-102-8 SN - 978-1-6654-8434-3 U6 - https://doi.org/10.23919/MIPRO55190.2022.9803362 SN - 2623-8764 SN - 1847-3938 SP - 113 EP - 117 ER -