TY - GEN A1 - Körner, Roman A1 - Schwarz, Daniel A1 - Fischer, Inga Anita A1 - Augel, Lion A1 - Bechler, Stefan A1 - Hänel, Linda A. A1 - Kern, Michael A1 - Oehme, Michael A1 - Rolseth, Erlend Granbo A1 - Schwartz, Bernhard A1 - Weißhaupt, David A1 - Zhang, Wogong A1 - Schulze, Jörg T1 - The Zener-Emitter: A Novel Superluminescent Ge Optical Waveguide-Amplifier with 4.7 dB Gain at 92 mA Based on Free-Carrier Modulation by Drect Zener Tunneling Monolithically Integrated on Si T2 - 2016 IEEE International Electronic Devices Meeting (IEDM), 3-7 Dec. 2016 Y1 - 2016 SN - 978-1-5090-3901-2 SN - 978-1-5090-3902-9 SP - 22.5.1 EP - 22.5.4 PB - IEEE CY - Piscataway, NJ ER - TY - GEN A1 - Funk, Hannes S. A1 - Kern, Michael A1 - Weisshaupt, David A1 - Sürgers, Christoph A1 - Fischer, Inga Anita A1 - Oehme, Michael A1 - Slageren, Joris van A1 - Schulze, Jörg T1 - Magnetic Characterization of a Mn Based Ferromagnet on SixGe(1-x-y)Sny with High Sn Content T2 - ECS Transactions Y1 - 2019 U6 - https://doi.org/10.1149/09301.0101ecst SN - 1938-5862 SN - 1938-6737 VL - 93 IS - 1 SP - 101 EP - 104 ER - TY - GEN A1 - Funk, Hannes S. A1 - Kern, Michael A1 - Weißhaupt, David A1 - Sürgers, Christoph A1 - Fischer, Inga Anita A1 - Oehme, Michael A1 - Slageren, Joris van A1 - Schulze, Jörg T1 - Composition and magnetic properties of thin films grown by interdiffusion of Mn and Sn-Rich, Ge lattice matched SixGe1-x-ySny layers T2 - Journal of Magnetism and Magnetic Materials Y1 - 2022 U6 - https://doi.org/10.1016/j.jmmm.2021.168731. SN - 0304-8853 VL - 546 ER - TY - GEN A1 - Schwartz, Bernhard A1 - Klossek, Andre A1 - Kittler, Martin A1 - Oehme, Michael A1 - Kasper, Erich A1 - Schulze, Jörg T1 - Electroluminescence of Germanium-LEDs on Silicon T2 - Physica Status Solidi C Y1 - 2014 U6 - https://doi.org/10.1002/pssc.201400056 VL - 11 IS - 11-12 SP - 1686 EP - 1691 ER - TY - CHAP A1 - Arguirov, Tzanimir V. A1 - Kittler, Martin A1 - Oehme, Michael A1 - Abrosimov, Nikolay V. A1 - Vyvenko, Oleg F. A1 - Kasper, Erich A1 - Schulze, Jörg T1 - Luminescence from Germanium and Germanium on Silicon T2 - Gettering and defect engineering in semiconductor technology XV, selected papers from the 15th Gettering and Defect Engineering in Semiconductor Technology Conference, September 22 - 27, 2013, Oxford, UK Y1 - 2014 U6 - https://doi.org/10.4028/www.scientific.net/SSP.205-206.383 SN - 1662-9779 SP - 383 EP - 393 PB - Trans Tech Publ. CY - Durnten-Zurich [u.a.] ER - TY - GEN A1 - Oehme, Michael A1 - Kostecki, Konrad A1 - Arguirov, Tzanimir V. A1 - Mussler, Gregor A1 - Ye, Kaiheng A1 - Gollhofer, Martin A1 - Schmid, Marc A1 - Kaschel, Mathias A1 - Körner, Roman A1 - Kittler, Martin A1 - Buca, Dan A1 - Kasper, Erich A1 - Schulze, Jörg T1 - GeSn Heterojunction LEDs on Si Substrates T2 - IEEE Photonics Technology Letters Y1 - 2014 U6 - https://doi.org/10.1109/LPT.2013.2291571 SN - 1041-1135 VL - 26 IS - 2 SP - 187 EP - 189 ER - TY - GEN A1 - Oehme, Michael A1 - Widmann, Daniel A1 - Kostecki, Konrad A1 - Zaumseil, Peter A1 - Schwartz, Bernhard A1 - Gollhofer, Martin A1 - Körner, Roman A1 - Bechler, Stefan A1 - Kittler, Martin A1 - Kasper, Erich A1 - Schulze, Jörg T1 - GeSn/Ge Multi Quantum Well Photodetectors on Si Substrates T2 - Optics Letters Y1 - 2014 U6 - https://doi.org/10.1364/OL.39.004711 SN - 1539-4794 VL - 39 IS - 16 SP - 4711 EP - 4714 ER - TY - GEN A1 - Schwartz, Bernhard A1 - Arguirov, Tzanimir V. A1 - Kittler, Martin A1 - Oehme, Michael A1 - Kostecki, Konrad A1 - Kasper, Erich A1 - Schulze, Jörg T1 - Comparison of EL emitted by LEDs on Si substrates containing Ge and Ge/GeSn MQW as active layers T2 - Silicon Photonics X, 9-12 February 2015, San Francisco, California, United States Y1 - 2015 U6 - https://doi.org/10.1117/12.2080816 PB - International Society for Optics and Photonics ER - TY - GEN A1 - Schwartz, Bernhard A1 - Oehme, Michael A1 - Kostecki, Konrad A1 - Widmann, Daniel A1 - Gollhofer, Martin A1 - Körner, Roman A1 - Bechler, Stefan A1 - Fischer, Inga Anita A1 - Wendav, Torsten A1 - Kasper, Erich A1 - Schulze, Jörg A1 - Kittler, Martin T1 - Electroluminescence of GeSn/Ge MQW LEDs on Si substrate T2 - Optics Letters Y1 - 2015 U6 - https://doi.org/10.1364/OL40.003209 VL - 40 IS - 13 SP - 3209 EP - 3212 ER - TY - GEN A1 - Schwartz, Bernhard A1 - Saring, Philipp A1 - Arguirov, Tzanimir V. A1 - Oehme, Michael A1 - Kostecki, Konrad A1 - Kasper, Erich A1 - Schulze, J. A1 - Kittler, Martin T1 - Analysis of EL Emitted by LEDs on Si Substrates Containing GeSn/Ge Multi Quantum Wells as Active Layers T2 - Solid State Phenomena Y1 - 2015 U6 - https://doi.org/10.4028/www.scientific.net/SSP.242.361 SN - 1012-0394 VL - 242 SP - 361 EP - 367 ER - TY - GEN A1 - Oehme, Michael A1 - Gollhofer, Martin A1 - Kostecki, Konrad A1 - Körner, Roman A1 - Bechler, Stefan A1 - Widmann, Daniel A1 - Aguirov, Tzanimir A1 - Kittler, Martin A1 - Schulze, Jörg T1 - Ge and GeSn Light Emitters on Si T2 - Solid State Phenomena Y1 - 2016 U6 - https://doi.org/10.4028/www.scientific.net/SSP.242.353 SN - 1012-0394 VL - 242 SP - 353 EP - 360 ER - TY - CHAP A1 - Schwartz, Bernhard A1 - Oehme, Michael A1 - Körner, Roman A1 - Bechler, Stefan A1 - Schulze, Jörg A1 - Kittler, Martin T1 - Luminescence of strained Ge on GeSn virtual substrate grown on Si (001) T2 - Silicon Photonics XII, 30 January-1 February 2017, San Francisco, California, United States Y1 - 2017 SN - 978-1-5106-0657-9 U6 - https://doi.org/10.1117/12.2249564 PB - SPIE CY - Bellingham, Washington ER - TY - GEN A1 - Augel, Lion A1 - Fischer, Inga Anita A1 - Gollhofer, Martin A1 - Oehme, Michael A1 - Schulze, Jörg T1 - Comparing Fourier transform infrared spectroscopy results with photocurrent measurements for Ge-on-Si PIN photodetectors with and without Al nanoantennas T2 - Journal of Applied Physics Y1 - 2020 U6 - https://doi.org/10.1063/5.0012279 SN - 1089-7550 VL - 128 IS - 1 SP - 013105-1 EP - 013105-8 ER - TY - GEN A1 - Weißhaupt, David A1 - Funk, Hannes S. A1 - Kern, Michal A1 - Dettling, Marco M. A1 - Schwarz, Daniel A1 - Oehme, Michael A1 - Sürgers, Christoph A1 - Slageren, Joris van A1 - Fischer, Inga Anita A1 - Schulze, Jörg T1 - Weak localization and weak antilocalization in doped Ge1-ySny layers with up to 8% Sn T2 - Journal of Physics: Condensed Matter Y1 - 2021 U6 - https://doi.org/10.1088/1361-648X/abcb68 SN - 1361-648X VL - 33 IS - 8 ER - TY - GEN A1 - Bergmann, Fritz A1 - Ayasse, Markus A1 - Schlipf, Jon A1 - Mörz, Florian A1 - Weißhaupt, David A1 - Oehme, Michael A1 - Prucnal, Slawomir A1 - Kawaguchi, Yuma A1 - Schwarz, Daniel A1 - Fischer, Inga Anita A1 - Schulze, Jörg T1 - Plasmonic gratings from highly doped Ge1−ySny films on Si T2 - Journal of Physics D: Applied Physics Y1 - 2021 SN - 1361-6463 VL - 54 IS - 44 ER - TY - GEN A1 - Weißhaupt, David A1 - Funk, Hannes S. A1 - Sürgers, Christoph A1 - Fischer, Gerda A1 - Oehme, Michael A1 - Schwarz, Daniel A1 - Fischer, Inga Anita A1 - Slageren, Joris van A1 - Schulze, Jörg T1 - Formation of Mn5Ge3 on a Recess-Etched Ge (111) Quantum-Well Structure for Semiconductor Spintronics T2 - 44th International Convention on Information, Communication and Electronic Technology, MIPRO 2021, Opatija, Croatia, September 27 - Oct. 1, 2021 Y1 - 2021 SN - 978-1-6654-4761-4 U6 - https://doi.org/10.23919/MIPRO52101.2021.9596924. SN - 978-953-233-101-1 SP - 45 EP - 49 PB - Piscataway CY - IEEE ER - TY - GEN A1 - Steuer, Oliver A1 - Schwarz, Daniel A1 - Oehme, Michael A1 - Schulze, J. A1 - Maczko, H. A1 - Kudrawiec, Robert A1 - Fischer, Inga Anita A1 - Heller, R. A1 - Hübner, R. A1 - Khan, M. M. A1 - Georgiev, Yordan M. A1 - Zhou, Shengqiang A1 - Helm, M. A1 - Prucnal, Slawomir T1 - Band-gap and strain engineering in GeSn alloys using post-growth pulsed laser melting T2 - Journal of Physics: Condensed Matter Y1 - 2022 U6 - https://doi.org/10.1088/1361-648X/aca3ea SN - 1361-648X VL - 35 IS - 5 ER - TY - GEN A1 - Weißhaupt, David A1 - Sürgers, Christoph A1 - Bloos, Dominik A1 - Funk, Hannes Simon A1 - Oehme, Michael A1 - Fischer, Gerda A1 - Schubert, Markus Andreas A1 - Wenger, Christian A1 - van Slageren, Joris A1 - Fischer, Inga Anita A1 - Schulze, Jörg T1 - Lateral Mn5Ge3 spin-valve in contact with a high-mobility Ge two-dimensional hole gas T2 - Semiconductor Science and Technology N2 - Abstract Ge two-dimensional hole gases (2DHG) in strained modulation-doped quantum-wells represent a promising material platform for future spintronic applications due to their excellent spin transport properties and the theoretical possibility of efficient spin manipulation. Due to the continuous development of epitaxial growth recipes extreme high hole mobilities and low effective masses can be achieved, promising an efficient spin transport. Furthermore, the Ge 2DHG can be integrated in the well-established industrial complementary metal-oxide-semiconductor (CMOS) devices technology. However, efficient electrical spin injection into a Ge 2DHG—an essential prerequisite for the realization of spintronic devices—has not yet been demonstrated. In this work, we report the fabrication and low-temperature magnetoresistance (MR) measurements of a laterally structured Mn5Ge3/Ge 2DHG/ Mn5Ge3 device. The ferromagnetic Mn5Ge3 contacts are grown directly into the Ge quantum well by means of an interdiffusion process with a spacing of approximately 130 nm, forming a direct electrical contact between the ferromagnetic metal and the Ge 2DHG. Here, we report for the first time a clear MR signal for temperatures below 13 K possibly arising from successful spin injection into the high mobility Ge 2DHG. The results represent a step forward toward the realization of CMOS compatible spintronic devices based on a 2DHG. KW - two-dimensional hole gas Y1 - 2024 U6 - https://doi.org/10.1088/1361-6641/ad8d06 SN - 0268-1242 VL - 39 IS - 12 SP - 1 EP - 10 PB - IOP Publishing ER - TY - GEN A1 - Weißhaupt, David A1 - Funk, Hannes S. A1 - Oehme, Michael A1 - Bloos, Dominik A1 - Berkmann, Fritz A1 - Seidel, Lukas A1 - Fischer, Inga Anita A1 - Schulze, Jörg T1 - High mobility Ge 2DHG based MODFETs for low-temperature applications T2 - Semiconductor Science and Technology Y1 - 2023 U6 - https://doi.org/10.1088/1361-6641/acb22f SN - 1361-6641 VL - 38 IS - 3 ER -