TY - GEN
A1 - Körner, Roman
A1 - Schwarz, Daniel
A1 - Fischer, Inga Anita
A1 - Augel, Lion
A1 - Bechler, Stefan
A1 - Hänel, Linda A.
A1 - Kern, Michael
A1 - Oehme, Michael
A1 - Rolseth, Erlend Granbo
A1 - Schwartz, Bernhard
A1 - Weißhaupt, David
A1 - Zhang, Wogong
A1 - Schulze, Jörg
T1 - The Zener-Emitter: A Novel Superluminescent Ge Optical Waveguide-Amplifier with 4.7 dB Gain at 92 mA Based on Free-Carrier Modulation by Drect Zener Tunneling Monolithically Integrated on Si
T2 - 2016 IEEE International Electronic Devices Meeting (IEDM), 3-7 Dec. 2016
Y1 - 2016
SN - 978-1-5090-3901-2
SN - 978-1-5090-3902-9
SP - 22.5.1
EP - 22.5.4
PB - IEEE
CY - Piscataway, NJ
ER -
TY - GEN
A1 - Funk, Hannes S.
A1 - Kern, Michael
A1 - Weisshaupt, David
A1 - Sürgers, Christoph
A1 - Fischer, Inga Anita
A1 - Oehme, Michael
A1 - Slageren, Joris van
A1 - Schulze, Jörg
T1 - Magnetic Characterization of a Mn Based Ferromagnet on SixGe(1-x-y)Sny with High Sn Content
T2 - ECS Transactions
Y1 - 2019
U6 - https://doi.org/10.1149/09301.0101ecst
SN - 1938-5862
SN - 1938-6737
VL - 93
IS - 1
SP - 101
EP - 104
ER -
TY - GEN
A1 - Funk, Hannes S.
A1 - Kern, Michael
A1 - Weißhaupt, David
A1 - Sürgers, Christoph
A1 - Fischer, Inga Anita
A1 - Oehme, Michael
A1 - Slageren, Joris van
A1 - Schulze, Jörg
T1 - Composition and magnetic properties of thin films grown by interdiffusion of Mn and Sn-Rich, Ge lattice matched SixGe1-x-ySny layers
T2 - Journal of Magnetism and Magnetic Materials
Y1 - 2022
U6 - https://doi.org/10.1016/j.jmmm.2021.168731.
SN - 0304-8853
VL - 546
ER -
TY - GEN
A1 - Schwartz, Bernhard
A1 - Klossek, Andre
A1 - Kittler, Martin
A1 - Oehme, Michael
A1 - Kasper, Erich
A1 - Schulze, Jörg
T1 - Electroluminescence of Germanium-LEDs on Silicon
T2 - Physica Status Solidi C
Y1 - 2014
U6 - https://doi.org/10.1002/pssc.201400056
VL - 11
IS - 11-12
SP - 1686
EP - 1691
ER -
TY - CHAP
A1 - Arguirov, Tzanimir V.
A1 - Kittler, Martin
A1 - Oehme, Michael
A1 - Abrosimov, Nikolay V.
A1 - Vyvenko, Oleg F.
A1 - Kasper, Erich
A1 - Schulze, Jörg
T1 - Luminescence from Germanium and Germanium on Silicon
T2 - Gettering and defect engineering in semiconductor technology XV, selected papers from the 15th Gettering and Defect Engineering in Semiconductor Technology Conference, September 22 - 27, 2013, Oxford, UK
Y1 - 2014
U6 - https://doi.org/10.4028/www.scientific.net/SSP.205-206.383
SN - 1662-9779
SP - 383
EP - 393
PB - Trans Tech Publ.
CY - Durnten-Zurich [u.a.]
ER -
TY - GEN
A1 - Oehme, Michael
A1 - Kostecki, Konrad
A1 - Arguirov, Tzanimir V.
A1 - Mussler, Gregor
A1 - Ye, Kaiheng
A1 - Gollhofer, Martin
A1 - Schmid, Marc
A1 - Kaschel, Mathias
A1 - Körner, Roman
A1 - Kittler, Martin
A1 - Buca, Dan
A1 - Kasper, Erich
A1 - Schulze, Jörg
T1 - GeSn Heterojunction LEDs on Si Substrates
T2 - IEEE Photonics Technology Letters
Y1 - 2014
U6 - https://doi.org/10.1109/LPT.2013.2291571
SN - 1041-1135
VL - 26
IS - 2
SP - 187
EP - 189
ER -
TY - GEN
A1 - Oehme, Michael
A1 - Widmann, Daniel
A1 - Kostecki, Konrad
A1 - Zaumseil, Peter
A1 - Schwartz, Bernhard
A1 - Gollhofer, Martin
A1 - Körner, Roman
A1 - Bechler, Stefan
A1 - Kittler, Martin
A1 - Kasper, Erich
A1 - Schulze, Jörg
T1 - GeSn/Ge Multi Quantum Well Photodetectors on Si Substrates
T2 - Optics Letters
Y1 - 2014
U6 - https://doi.org/10.1364/OL.39.004711
SN - 1539-4794
VL - 39
IS - 16
SP - 4711
EP - 4714
ER -
TY - GEN
A1 - Schwartz, Bernhard
A1 - Arguirov, Tzanimir V.
A1 - Kittler, Martin
A1 - Oehme, Michael
A1 - Kostecki, Konrad
A1 - Kasper, Erich
A1 - Schulze, Jörg
T1 - Comparison of EL emitted by LEDs on Si substrates containing Ge and Ge/GeSn MQW as active layers
T2 - Silicon Photonics X, 9-12 February 2015, San Francisco, California, United States
Y1 - 2015
U6 - https://doi.org/10.1117/12.2080816
PB - International Society for Optics and Photonics
ER -
TY - GEN
A1 - Schwartz, Bernhard
A1 - Oehme, Michael
A1 - Kostecki, Konrad
A1 - Widmann, Daniel
A1 - Gollhofer, Martin
A1 - Körner, Roman
A1 - Bechler, Stefan
A1 - Fischer, Inga Anita
A1 - Wendav, Torsten
A1 - Kasper, Erich
A1 - Schulze, Jörg
A1 - Kittler, Martin
T1 - Electroluminescence of GeSn/Ge MQW LEDs on Si substrate
T2 - Optics Letters
Y1 - 2015
U6 - https://doi.org/10.1364/OL40.003209
VL - 40
IS - 13
SP - 3209
EP - 3212
ER -
TY - GEN
A1 - Schwartz, Bernhard
A1 - Saring, Philipp
A1 - Arguirov, Tzanimir V.
A1 - Oehme, Michael
A1 - Kostecki, Konrad
A1 - Kasper, Erich
A1 - Schulze, J.
A1 - Kittler, Martin
T1 - Analysis of EL Emitted by LEDs on Si Substrates Containing GeSn/Ge Multi Quantum Wells as Active Layers
T2 - Solid State Phenomena
Y1 - 2015
U6 - https://doi.org/10.4028/www.scientific.net/SSP.242.361
SN - 1012-0394
VL - 242
SP - 361
EP - 367
ER -
TY - GEN
A1 - Oehme, Michael
A1 - Gollhofer, Martin
A1 - Kostecki, Konrad
A1 - Körner, Roman
A1 - Bechler, Stefan
A1 - Widmann, Daniel
A1 - Aguirov, Tzanimir
A1 - Kittler, Martin
A1 - Schulze, Jörg
T1 - Ge and GeSn Light Emitters on Si
T2 - Solid State Phenomena
Y1 - 2016
U6 - https://doi.org/10.4028/www.scientific.net/SSP.242.353
SN - 1012-0394
VL - 242
SP - 353
EP - 360
ER -
TY - CHAP
A1 - Schwartz, Bernhard
A1 - Oehme, Michael
A1 - Körner, Roman
A1 - Bechler, Stefan
A1 - Schulze, Jörg
A1 - Kittler, Martin
T1 - Luminescence of strained Ge on GeSn virtual substrate grown on Si (001)
T2 - Silicon Photonics XII, 30 January-1 February 2017, San Francisco, California, United States
Y1 - 2017
SN - 978-1-5106-0657-9
U6 - https://doi.org/10.1117/12.2249564
PB - SPIE
CY - Bellingham, Washington
ER -
TY - GEN
A1 - Augel, Lion
A1 - Fischer, Inga Anita
A1 - Gollhofer, Martin
A1 - Oehme, Michael
A1 - Schulze, Jörg
T1 - Comparing Fourier transform infrared spectroscopy results with photocurrent measurements for Ge-on-Si PIN photodetectors with and without Al nanoantennas
T2 - Journal of Applied Physics
Y1 - 2020
U6 - https://doi.org/10.1063/5.0012279
SN - 1089-7550
VL - 128
IS - 1
SP - 013105-1
EP - 013105-8
ER -
TY - GEN
A1 - Weißhaupt, David
A1 - Funk, Hannes S.
A1 - Kern, Michal
A1 - Dettling, Marco M.
A1 - Schwarz, Daniel
A1 - Oehme, Michael
A1 - Sürgers, Christoph
A1 - Slageren, Joris van
A1 - Fischer, Inga Anita
A1 - Schulze, Jörg
T1 - Weak localization and weak antilocalization in doped Ge1-ySny layers with up to 8% Sn
T2 - Journal of Physics: Condensed Matter
Y1 - 2021
U6 - https://doi.org/10.1088/1361-648X/abcb68
SN - 1361-648X
VL - 33
IS - 8
ER -
TY - GEN
A1 - Bergmann, Fritz
A1 - Ayasse, Markus
A1 - Schlipf, Jon
A1 - Mörz, Florian
A1 - Weißhaupt, David
A1 - Oehme, Michael
A1 - Prucnal, Slawomir
A1 - Kawaguchi, Yuma
A1 - Schwarz, Daniel
A1 - Fischer, Inga Anita
A1 - Schulze, Jörg
T1 - Plasmonic gratings from highly doped Ge1−ySny films on Si
T2 - Journal of Physics D: Applied Physics
Y1 - 2021
SN - 1361-6463
VL - 54
IS - 44
ER -
TY - GEN
A1 - Weißhaupt, David
A1 - Funk, Hannes S.
A1 - Sürgers, Christoph
A1 - Fischer, Gerda
A1 - Oehme, Michael
A1 - Schwarz, Daniel
A1 - Fischer, Inga Anita
A1 - Slageren, Joris van
A1 - Schulze, Jörg
T1 - Formation of Mn5Ge3 on a Recess-Etched Ge (111) Quantum-Well Structure for Semiconductor Spintronics
T2 - 44th International Convention on Information, Communication and Electronic Technology, MIPRO 2021, Opatija, Croatia, September 27 - Oct. 1, 2021
Y1 - 2021
SN - 978-1-6654-4761-4
U6 - https://doi.org/10.23919/MIPRO52101.2021.9596924.
SN - 978-953-233-101-1
SP - 45
EP - 49
PB - Piscataway
CY - IEEE
ER -
TY - GEN
A1 - Steuer, Oliver
A1 - Schwarz, Daniel
A1 - Oehme, Michael
A1 - Schulze, J.
A1 - Maczko, H.
A1 - Kudrawiec, Robert
A1 - Fischer, Inga Anita
A1 - Heller, R.
A1 - Hübner, R.
A1 - Khan, M. M.
A1 - Georgiev, Yordan M.
A1 - Zhou, Shengqiang
A1 - Helm, M.
A1 - Prucnal, Slawomir
T1 - Band-gap and strain engineering in GeSn alloys using post-growth pulsed laser melting
T2 - Journal of Physics: Condensed Matter
Y1 - 2022
U6 - https://doi.org/10.1088/1361-648X/aca3ea
SN - 1361-648X
VL - 35
IS - 5
ER -
TY - GEN
A1 - Weißhaupt, David
A1 - Sürgers, Christoph
A1 - Bloos, Dominik
A1 - Funk, Hannes Simon
A1 - Oehme, Michael
A1 - Fischer, Gerda
A1 - Schubert, Markus Andreas
A1 - Wenger, Christian
A1 - van Slageren, Joris
A1 - Fischer, Inga Anita
A1 - Schulze, Jörg
T1 - Lateral Mn5Ge3 spin-valve in contact with a high-mobility Ge two-dimensional hole gas
T2 - Semiconductor Science and Technology
N2 - Abstract
Ge two-dimensional hole gases (2DHG) in strained modulation-doped quantum-wells represent a promising material platform for future spintronic applications due to their excellent spin transport properties and the theoretical possibility of efficient spin manipulation. Due to the continuous development of epitaxial growth recipes extreme high hole mobilities and low effective masses can be achieved, promising an efficient spin transport. Furthermore, the Ge 2DHG can be integrated in the well-established industrial complementary metal-oxide-semiconductor (CMOS) devices technology. However, efficient electrical spin injection into a Ge 2DHG—an essential prerequisite for the realization of spintronic devices—has not yet been demonstrated. In this work, we report the fabrication and low-temperature magnetoresistance (MR) measurements of a laterally structured Mn5Ge3/Ge 2DHG/ Mn5Ge3 device. The ferromagnetic Mn5Ge3 contacts are grown directly into the Ge quantum well by means of an interdiffusion process with a spacing of approximately 130 nm, forming a direct electrical contact between the ferromagnetic metal and the Ge 2DHG. Here, we report for the first time a clear MR signal for temperatures below 13 K possibly arising from successful spin injection into the high mobility Ge 2DHG. The results represent a step forward toward the realization of CMOS compatible spintronic devices based on a 2DHG.
KW - two-dimensional hole gas
Y1 - 2024
U6 - https://doi.org/10.1088/1361-6641/ad8d06
SN - 0268-1242
VL - 39
IS - 12
SP - 1
EP - 10
PB - IOP Publishing
ER -
TY - GEN
A1 - Weißhaupt, David
A1 - Funk, Hannes S.
A1 - Oehme, Michael
A1 - Bloos, Dominik
A1 - Berkmann, Fritz
A1 - Seidel, Lukas
A1 - Fischer, Inga Anita
A1 - Schulze, Jörg
T1 - High mobility Ge 2DHG based MODFETs for low-temperature applications
T2 - Semiconductor Science and Technology
Y1 - 2023
U6 - https://doi.org/10.1088/1361-6641/acb22f
SN - 1361-6641
VL - 38
IS - 3
ER -