TY - GEN A1 - Apte, Anisha M. A1 - Rohde, Ulrich L. A1 - Poddar, Ajay K. A1 - Rudolph, Matthias T1 - Optimizing Phase-Noise Performance: Theory and Design Techniques for a Crystal Oscillator T2 - IEEE Microwave Magazine Y1 - 2017 U6 - https://doi.org/10.1109/MMM.2017.2679998 SN - 1527-3342 VL - 18 IS - 4 SP - 108 EP - 123 ER - TY - CHAP A1 - Rudolph, Matthias A1 - Andrei, Cristina A1 - Dörner, Ralf A1 - Chevtchenko, Serguei A. A1 - Heinrich, Wolfgang T1 - Noise in GaN HEMTs and Circuits T2 - 24th International Conference on Noise and Fluctuations (ICNF), Vilnius, Lithuania, June 20-23, 2017 Y1 - 2017 SN - 978-1-5090-2760-6 U6 - https://doi.org/10.1109/ICNF.2017.7985978 SP - 1 EP - 4 PB - IEEE CY - Piscataway, NJ ER - TY - CHAP A1 - Bonani, Fabrizio A1 - Rudolph, Matthias T1 - Simulating Noise in Nonlinear Circuits T2 - IEEE MTT-S International Microwave Symposium (IMS), 4-9 June 2017, Honololu, HI, USA, Workshop WSP: Recent Advances in Microwave Noise: from Device Modeling to Network Design and Characterization Y1 - 2017 UR - https://ims2017.org/technical-programs/filter/search/rudolph ER - TY - CHAP A1 - Luo, Peng A1 - Bengtsson, Olof A1 - Rudolph, Matthias T1 - A Drain Lag Model for GaN HEMT based on Chalmers Model and Pulsed S-Parameter Measurements T2 - IEEE MTT-S International Microwave Symposium (IMS), 4-9 June 2017, Honololu, HI, USA Y1 - 2017 SN - 978-1-5090-6360-4 U6 - https://doi.org/10.1109/MWSYM.2017.8059085 SP - 240 EP - 243 PB - IEEE CY - Piscataway, NJ ER - TY - CHAP A1 - Andrei, Cristina A1 - Dörner, Ralf A1 - Chevtchenko, Serguei A. A1 - Heinrich, Wolfgang A1 - Rudolph, Matthias T1 - On the Optimization of GaN HEMT Layout for Highly Rugged Low-Noise Amplifier Design T2 - 12th European Microwave Integrated Circuits Conference (EuMIC), 8-10 Oct. 2017, Nuremberg, Germany Y1 - 2017 SN - 978-2-87487-048-4 U6 - https://doi.org/10.23919/EuMIC.2017.8230705 SP - 244 EP - 247 PB - IEEE CY - Piscataway, NJ ER - TY - CHAP A1 - Kaule, Evelyne A1 - Dörner, Ralf A1 - Weimann, Nils A1 - Rudolph, Matthias T1 - Noise modeling of transferred-substrate InP-DHBTs T2 - IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems (COMCAS), 13-15 Nov. 2017, Tel-Aviv, Israel 2017 Y1 - 2017 SN - 978-1-5386-3169-0 U6 - https://doi.org/10.1109/COMCAS.2017.8244768 SP - 1 EP - 4 PB - IEEE CY - Piscataway, NJ ER - TY - CHAP A1 - Nasser, Caram A1 - Ritter, Dan A1 - Rudolph, Matthias T1 - Bias dependence of the access resistance in GaN HEMTs T2 - 2018 22nd International Microwave and Radar Conference (MIKON), Poznán, May 14-17, 2018, Poland Y1 - 2018 UR - https://ieeexplore.ieee.org/document/8405197 SN - 978-83-949421-1-3 U6 - https://doi.org/10.23919/MIKON.2018.8405197 SP - 271 EP - 273 PB - IEEE CY - Piscataway, NJ ER - TY - CHAP A1 - Luo, Peng A1 - Schnieder, Frank A1 - Rudolph, Matthias T1 - Chalmers GaN HEMT charge model revisited T2 - German Microwave Conference (GeMiC), 12-14 March 2018, Freiburg, Germany Y1 - 2018 SN - 978-3-9812668-8-7 U6 - https://doi.org/10.23919/GEMIC.2018.8335055 SP - 164 EP - 167 PB - IEEE CY - Piscataway, NJ ER - TY - CHAP A1 - Luo, Peng A1 - Schnieder, Frank A1 - Bengtsson, Olof A1 - Heinrich, Wolfgang A1 - Rudolph, Matthias T1 - Modeling the Virtual Gate Voltage in Dispersive GaN HEMTs T2 - IEEE/MTT-S International Microwave Symposium, 10-15 June 2018, Philadelphia, PA, USA Y1 - 2018 SN - 978-1-5386-5067-7 U6 - https://doi.org/10.1109/MWSYM.2018.8439389 SP - 728 EP - 731 PB - IEEE CY - Piscataway, NJ ER - TY - GEN A1 - Kaule, Evelyne A1 - Andrei, Cristina A1 - Gerlich, Stefan A1 - Dörner, Ralf A1 - Rudolph, Matthias T1 - Limiting the Output Power of Rugged GaN LNAs T2 - 14th European Microwave Integrated Circuits Conference (EuMIC) N2 - Rugged GaN HEMT low-noise amplifiers are well established, but the common concept of achieving ruggedness by applying the gate supply voltage through a high ohmic resistance might not be sufficient in addition to control the maximum output power. This paper shifts the focus to the protection of subsequent stages and proposes a circuit concept based on an output attenuator and an adaptive drain supply. It is shown that the concept implementation provides an attenuation of up to 28dB under input overdrive condition while leaving small-signal noise Figure unaffected. KW - Power generation; Logic Gates; Gallium nitride; Attenuators; HEMTs; Printed circuits; Power measurement; Limit; GaN; HEMT; ruggedness; low noise amplifier (LNA); receiver Y1 - 2019 SN - 978-2-87487-056-9 SN - 978-1-7281-0768-4 U6 - https://doi.org/10.23919/EuMIC.2019.8909653 SP - 240 EP - 242 CY - Paris, France ER - TY - GEN A1 - Kaule, Evelyne A1 - Andrei, Cristina A1 - Gerlich, Stefan A1 - Dörner, Ralf A1 - Rudolph, Matthias T1 - Limiting the Output Power of Rugged GaN LNAs T2 - Proceedings of 49th European Microwave Conference (EuMC) N2 - Rugged GaN HEMT low-noise amplifiers are well established, but the common concept of achieving ruggedness by applying the gate supply voltage through a high ohmic resistance might not be sufficient in addition to control the maximum output power. This paper shifts the focus to the protection of subsequent stages and proposes a circuit concept based on an output attenuator and an adaptive drain supply. It is shown that the concept implementation provides an attenuation of up to 28 dB under input overdrive condition while leaving small-signal noise figure unaffected. KW - Power generation; Logic Gates; Gallium nitride; Attenuators; HEMTs; Printed circuits; Power measurement; Limit; GaN; HEMT; ruggedness; low noise amplifier (LNA); receiver Y1 - 2019 SN - 978-2-87487-055-2 SN - 978-1-7281-1798-0 U6 - https://doi.org/10.23919/EuMC.2019.8910675 SP - 794 EP - 796 CY - Paris, France ER - TY - GEN A1 - Nasser, Caram A1 - Luo, Peng A1 - Schnieder, Frank A1 - Rudolph, Matthias A1 - Ritter, Dan T1 - Simulation of the RF Power Performance of a GaN HFET and Comparison to Experiment T2 - IEEE Transactions on Electron Devices Y1 - 2019 U6 - https://doi.org/10.1109/TED.2019.2907484 SN - 0018-9383 SN - 1557-9646 VL - 66 IS - 5 SP - 2146 EP - 2150 ER - TY - GEN A1 - Griebel, Wolfgang A1 - Rudolph, Matthias A1 - Rohde, Ulrich L. T1 - Added Noise in Oscillators Caused by the Transistor Base Emitter Breakdown Phenomenon T2 - IETE Journal of Research Y1 - 2020 U6 - https://doi.org/10.1080/03772063.2020.1847702 SN - 0974-780X SP - 1 EP - 11 ER -