TY - JOUR A1 - Rudolph, Matthias A1 - Dörner, Ralf A1 - Heymann, Peter T1 - GaAs HBT Operating as Integrated V- to W-Band Gunn Oscillator Y1 - 2002 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Schnieder, Frank A1 - Heinrich, Wolfgang T1 - Modeling Emitter Breakdown in GaAs-Based HBTs Y1 - 2002 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Dörner, Ralf T1 - Consistent Modeling of Capacitances and Transit Times of GaAs-Based HBTs Y1 - 2005 ER - TY - GEN A1 - Rudolph, Matthias A1 - Lenk, Friedrich A1 - Llopis, O. A1 - Heinrich, Wolfgang T1 - On the Simulation of Low-Frequency Noise Upconversion in InGaP/GaAs HBTs T2 - IEEE transactions on microwave theory and techniques Y1 - 2006 SN - 0018-9480 VL - 54 IS - 7 SP - 2954 EP - 2961 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Meliani, Chafik T1 - On the Correlation between Eye-Diagram and Frequency Characteristics of GaAs-HBT TWAsfor 20 and 40 Gbps NRZ Signals Y1 - 2006 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Behtash, Reza A1 - Dörner, Ralf A1 - Hirche, Klaus A1 - Wurfl, Joachim A1 - Heinrich, Wolfgang A1 - Tränkle, Günther T1 - Analysis of the Survivability of GaN Low-Noise Amplifiers Y1 - 2007 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Korndörfer, Falk A1 - Heymann, Peter A1 - Heinrich, Wolfgang T1 - Compact Large-Signal Shot-Noise Model for HBTs Y1 - 2008 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Meliani, Chafik A1 - Dörner, Ralf A1 - Heinrich, Wolfgang T1 - Bandwidth Potential of HBT-Based TWAs as a Function of Transistor fmax/fT Ratio Y1 - 2008 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Khalil, I. A1 - Liero, Armin A1 - Lossy, Richard A1 - Heinrich, Wolfgang T1 - GaN HEMT Potential for Low Noise Highly Linear RF Applications Y1 - 2008 ER - TY - GEN A1 - Rudolph, Matthias A1 - Bonani, Fabrizio T1 - Low-Frequency Noise in Nonlinear Systems: Its Impact on RF Performance and Implicationsfor Device Modeling and Circuit Simulation Y1 - 2009 ER - TY - GEN A1 - Rudolph, Matthias A1 - Chaturvedi, Nidhi A1 - Hirche, Klaus A1 - Wurfl, K. A1 - Heinrich, Wolfgang A1 - Tränkle, Günther T1 - Highly Rugged 30 GHz GaN Low-Noise Amplifiers Y1 - 2009 ER - TY - GEN A1 - Rudolph, Matthias A1 - Kraemer, Tomas A1 - Schmückle, Franz-Josef A1 - Würfl, Joachim A1 - Tränkle, Günther T1 - InP DHBT Process in Transferred Substrate Technology with ft and fmax over 400 GHz Y1 - 2009 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Tischler, Th. A1 - Kilk, A. A1 - Heinrich, Wolfgang T1 - Via Arrays for Grounding in Multilayer Packaging - Frequency Limits and Design Rules Y1 - 2003 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Dörner, Ralf T1 - Large-Signal HBT Model Requirements to Predict Nonlinear Behaviour Y1 - 2004 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Dörner, Ralf T1 - Large-Signal Modeling of High-Voltage GaAs Power HBTs Y1 - 2005 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Meliani, Chafik A1 - Heinrich, Wolfgang T1 - A 40 Gbps GaAs-HBT Distributed Amplifier with an Over-fT Cut-Off Frequency: Analyticaland Experimental Study Y1 - 2005 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Behtash, Reza A1 - Hirche, Klaus A1 - Würfl, Joachim A1 - Heinrich, Wolfgang A1 - Tränkle, Günther T1 - A Highly Survivable 3-7 GHz GaN Low-Noise Amplifier Y1 - 2006 ER - TY - GEN A1 - Rudolph, Matthias A1 - Meliani, Chafik A1 - Kurpas, Paul A1 - Schmidt, L. A1 - Rheinfelder, C. N. A1 - Heinrich, Wolfgang T1 - A 2.4 GHz GaAs-HBT Class-E MMIC Amplifier with 65% PAE Y1 - 2007 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Heymann, Peter T1 - On Compact HBT RF Noise Modeling Y1 - 2007 ER - TY - JOUR A1 - Rudolph, Matthias T1 - Limitations of Current Compact Transit-Time Models for III-V-Based HBTs Y1 - 2008 ER - TY - GEN A1 - Rudolph, Matthias A1 - Dewitz, Mike A1 - Liero, Armin A1 - Khalil, I. A1 - Chaturvedi, Nidhi A1 - Wipf, Christian A1 - Bertenburg, R. M. A1 - Miller, J. A1 - Würfl, Joachim A1 - Heinrich, Wolfgang A1 - Tränkle, Günther T1 - Highly Robust X-Band LNA with Extremely Short Recovery Time Y1 - 2009 ER - TY - CHAP A1 - Rudolph, Matthias A1 - Dörner, Ralf A1 - Klapproth, L. A1 - Heymann, Peter T1 - New Algorithm for Extraction of FET Noise Model Parameters Y1 - 1998 ER - TY - CHAP A1 - Rudolph, Matthias A1 - Dörner, Ralf A1 - Heymann, Peter T1 - New GaInP/GaAs-HBT Large-Signal Model for Power Applications Y1 - 1998 ER - TY - CHAP A1 - Rudolph, Matthias A1 - Dörner, Ralf A1 - Heymann, Peter A1 - Richter, E. T1 - Scaling of GaInP/GaAs HBT Equivalent-Circuit Elements Y1 - 1999 ER - TY - CHAP A1 - Rudolph, Matthias A1 - Dörner, Ralf A1 - Heymann, Peter T1 - A Universal Measurement System for Microwave Power Transistors Y1 - 1999 ER - TY - CHAP A1 - Rudolph, Matthias A1 - Dörner, Ralf A1 - Heymann, Peter T1 - Multiharmonic Generator for On-Wafer Phase Calibration of Non-Linear Network Analyzer Y1 - 2001 ER - TY - CHAP A1 - Rudolph, Matthias A1 - Kurpas, Paul A1 - Brunner, F. A1 - Doser, W. A1 - Maaßdorf, Andre A1 - Dörner, Ralf A1 - Blanck, H. A1 - Heinrich, Wolfgang A1 - Würfl, Joachim T1 - Development and Characterization of GaInP/GaAs HBTs for High Voltage Operation Y1 - 2001 ER - TY - CHAP A1 - Rudolph, Matthias A1 - Meliani, Chafik A1 - Hilsenbeck, Jochen A1 - Heinrich, Wolfgang T1 - A GaAs-HBT Distributed Amplifier with Near-fT Cut-off Frequency for High-Bitrate Transmissions Y1 - 2004 ER - TY - CHAP A1 - Rudolph, Matthias A1 - Schnieder, Frank A1 - Heinrich, Wolfgang A1 - Schnieder, Frank T1 - Investigation of Thermal Crunching Effects in Fishbone-Type Layout Power GaAs-HBTs Y1 - 2004 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Dörner, Ralf A1 - Klapproth, L. A1 - Heymann, Peter T1 - An HBT Noise Model Valid up to Transit Frequency Y1 - 1999 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Dörner, Ralf A1 - Klapproth, L. A1 - Heymann, Peter A1 - Prinzler, H. A1 - Böck, Georg T1 - Experimental Evaluation of Microwave Field-EffectTransistor Noise Models Y1 - 1999 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Dörner, Ralf A1 - Heymann, Peter T1 - Harmonic Tuning of Power Transistors by Active Load-Pull Measurement Y1 - 2000 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Dörner, Ralf A1 - Heymann, Peter A1 - Beilenhoff, K. T1 - Scalable GaInP/GaAs HBT Large-Signal Model Y1 - 2000 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Dörner, Ralf A1 - Heymann, Peter T1 - Multiharmonic Generators for Relative Phase Calibration of Nonlinear Network Analyzers Y1 - 2001 ER - TY - GEN A1 - Rudolph, Matthias A1 - Würfl, Joachim A1 - Kurpas, Paul A1 - Brunner, F. A1 - Mai, M. T1 - Degradation properties of MOVPE-grown GaInP/GaAs HBTs under combined temperatureand current stressing Y1 - 2001 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Dörner, Ralf A1 - Heymann, R. A1 - Klapproth, L. A1 - Böck, Georg T1 - Direct Extraction of FET Noise Models from Noise Figure Measurements Y1 - 2002 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Dörner, Ralf A1 - Heymann, R. A1 - Beilenhoff, K. T1 - Unified Model for Collector Charge in Heterojunction Bipolar Transistors Y1 - 2002 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Sheinman, B. A1 - Wasige, E. A1 - Dörner, Ralf A1 - Sidorov, V. A1 - Cohen, S. A1 - Ritter, Dan T1 - A Peeling Algorithm for Extraction of the HBT Small-Signal Equivalent Circuit Y1 - 2002 ER - TY - JOUR A1 - Rudolph, Matthias T1 - Uniqueness Problems in Compact HBT Models Caused by Thermal Effects Y1 - 2004 ER - TY - CHAP A1 - Rudolph, Matthias A1 - Heymann, Peter T1 - The Influence of Microwave Two-Port Noise on Residual Phase Noise in GaAs-HBTs Y1 - 2004 ER - TY - CHAP A1 - Rudolph, Matthias A1 - Meliani, Chafik A1 - Hilsenbeck, Jochen A1 - Heinrich, Wolfgang A1 - Meliani, Chafik T1 - A 40 Gbps Broadband Amplifier for Modulator-Driver Applications Using a GaAs HBT Technology Y1 - 2004 ER - TY - CHAP A1 - Rudolph, Matthias A1 - Dörner, Ralf T1 - Key Issues of Compact Models for GaAs Heterojunction Bipolar Transistors Y1 - 2004 ER - TY - CHAP A1 - Rudolph, Matthias A1 - Meliani, Chafik A1 - Heinrich, Wolfgang T1 - On-Chip GaAs-HBT Broadband-Coupled High-Bitrate Modulator Driver TWAs Y1 - 2005 ER - TY - JOUR A1 - Rudolph, Matthias A1 - Beilenhoff, K. A1 - Dörner, Ralf A1 - Heymann, Peter T1 - Scalable GaInP/GaAs HBT Large-Signal Model Y1 - 2000 ER - TY - CHAP A1 - Lenk, Friedrich A1 - Dörner, Ralf A1 - Rumiantsev, Andrej A1 - Rudolph, Matthias T1 - Calibration Residual Error Propagation Analysis Using Conformal Mapping T2 - 77th ARFTG Microwave Measurement Conference (ARFTG 2011), Baltimore, Maryland, USA, 10 June 2011 Y1 - 2011 SN - 978-1-61284-959-1 PB - Piscataway, NJ CY - IEEE ER - TY - CHAP A1 - Rudolph, Matthias A1 - Engelmann, Jens A1 - Schmückle, Franz-Josef ED - Rudolph, Matthias ED - Root, David E. ED - Fager, Christian T1 - Large and packaged Transistors T2 - Nonlinear Transistor Model Parameter Extraction Techniques Y1 - 2011 SN - 978-0-521-76210-6 SP - 171 EP - 205 PB - Cambridge University Press CY - Cambridge ER - TY - CHAP A1 - Rudolph, Matthias A1 - Schnieder, Frank A1 - Schmückle, Franz-Josef A1 - Heinrich, Wolfgang T1 - An Analysis of Source Connections in GaN Power Transistor Packages T2 - Proceedings, Microwave Conference (GeMiC), 2012 The 7th in Ilmenau, Germany Y1 - 2012 SN - 978-3-9812668-4-9 CY - Ilmenau ER - TY - CHAP A1 - Rudolph, Matthias ED - Rudolph, Matthias ED - Fager, Christian ED - Root, David E. T1 - Introduction T2 - Nonlinear transistor model parameter extraction techniques Y1 - 2012 SN - 978-0-521-76210-6 SP - 1 EP - 17 PB - Cambridge University Press CY - Cambridge ER - TY - BOOK A1 - Rohde, Ulrich L. A1 - Rudolph, Matthias T1 - RF/Microwave Circuit Design for Wireless Applications Y1 - 2012 SN - 978-0-470-90181-6 PB - Wiley CY - Hoboken, NJ ET - 2. ed. ER - TY - CHAP A1 - Rudolph, Matthias A1 - Dörner, Ralf A1 - Ngnintedem, Eric A1 - Heinrich, Wolfgang T1 - Noise Modeling of GaN HEMT Devices T2 - Microwave Integrated Circuits Conference (EuMIC), 2012 7th European , Amsterdam Y1 - 2012 UR - http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=6476772 SN - 978-1-4673-2302-4 SN - 978-2-87487-026-2 SP - 159 EP - 162 PB - IEEE CY - Piscataway, NJ ER - TY - CHAP A1 - Andrei, Cristina A1 - Dörner, Ralf A1 - Bengtsson, Olof A1 - Chevtchenko, Serguei A. A1 - Heinrich, Wolfgang A1 - Rudolph, Matthias T1 - Highly Linear X-Band GaN-Based Low-Noise Amplifier T2 - Signals, Systems, and Electronics (ISSSE), 2012 International Symposium on , Potsdam Y1 - 2012 UR - http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=6362332 SN - 978-1-4673-4454-8 SN - 978-1-4673-4453-1 PB - IEEE CY - Piscataway, NJ ER -