TY - GEN A1 - Liero, Armin A1 - Dewitz, Mike A1 - Kühn, Silvio A1 - Chaturvedi, Nidhi A1 - Xu, Jijun A1 - Rudolph, Matthias T1 - On the Recovery Time of Highly Robust Low-Noise Amplifiers T2 - IEEE transactions on microwave theory and techniques KW - Amplifier noise KW - integrated circuit noise KW - microwave field-effect transistor (FET) amplifiers KW - monolithic microwave integrated circuit (MMIC) amplifiers KW - noise KW - semiconductor device noise KW - integrated circuit (MMIC) amplifiers Y1 - 2010 U6 - https://doi.org/10.1109/TMTT.2010.2041519 SN - 0018-9480 VL - 58 IS - 4 SP - 781 EP - 787 ER - TY - GEN A1 - Rudolph, Matthias A1 - Heymann, Peter A1 - Boss, Hermann T1 - Impact of Receiver Bandwidth and Nonlinearity on Noise Measurement Methods Y1 - 2010 U6 - https://doi.org/http://dx.doi.org/10.1109/MMM.2010.937715 ER - TY - GEN A1 - Rudolph, Matthias A1 - Lenk, Friedrich A1 - Llopis, O. A1 - Heinrich, Wolfgang T1 - On the Simulation of Low-Frequency Noise Upconversion in InGaP/GaAs HBTs T2 - IEEE transactions on microwave theory and techniques Y1 - 2006 SN - 0018-9480 VL - 54 IS - 7 SP - 2954 EP - 2961 ER - TY - GEN A1 - Rudolph, Matthias A1 - Bonani, Fabrizio T1 - Low-Frequency Noise in Nonlinear Systems: Its Impact on RF Performance and Implicationsfor Device Modeling and Circuit Simulation Y1 - 2009 ER - TY - GEN A1 - Rudolph, Matthias A1 - Chaturvedi, Nidhi A1 - Hirche, Klaus A1 - Wurfl, K. A1 - Heinrich, Wolfgang A1 - Tränkle, Günther T1 - Highly Rugged 30 GHz GaN Low-Noise Amplifiers Y1 - 2009 ER - TY - GEN A1 - Rudolph, Matthias A1 - Kraemer, Tomas A1 - Schmückle, Franz-Josef A1 - Würfl, Joachim A1 - Tränkle, Günther T1 - InP DHBT Process in Transferred Substrate Technology with ft and fmax over 400 GHz Y1 - 2009 ER - TY - GEN A1 - Rudolph, Matthias A1 - Dewitz, Mike A1 - Liero, Armin A1 - Khalil, I. A1 - Chaturvedi, Nidhi A1 - Wipf, Christian A1 - Bertenburg, R. M. A1 - Miller, J. A1 - Würfl, Joachim A1 - Heinrich, Wolfgang A1 - Tränkle, Günther T1 - Highly Robust X-Band LNA with Extremely Short Recovery Time Y1 - 2009 ER - TY - GEN A1 - Schnieder, Frank A1 - Rudolph, Matthias T1 - Thermal Coupling in AlGaN/GaN Power Transistors T2 - Frequenz Y1 - 2013 U6 - https://doi.org/10.1515/freq-2012-0031 SN - 2191-6349 SN - 0016-1136 VL - 67 IS - 1-2 SP - 21 EP - 26 ER - TY - GEN A1 - Schnieder, Frank A1 - Bengtsson, Olof A1 - Schmückle, Franz-Josef A1 - Rudolph, Matthias A1 - Heinrich, Wolfgang T1 - Simulation of RF Power Distribution in a Packaged GaN Power Transistor Using an Electro-Thermal Large-Signal Description T2 - IEEE transactions on microwave theory and techniques Y1 - 2013 U6 - https://doi.org/10.1109/TMTT.2013.2261089 SN - 0018-9480 VL - 61 IS - 7 SP - 2603 EP - 2609 ER - TY - GEN A1 - Johansen, Tom K. A1 - Rudolph, Matthias A1 - Jensen, Thomas A1 - Kraemer, Tomas A1 - Weimann, Nils A1 - Schnieder, Frank A1 - Krozer, Viktor A1 - Heinrich, Wolfgang T1 - Small- and large-signal modeling of InP HBTs in transferred-substrate technology T2 - International Journal of Microwave and Wireless Technologies Y1 - 2014 U6 - https://doi.org/10.1017/S1759078714000051 VL - 6 IS - 3-4 SP - 243 EP - 251 ER - TY - GEN A1 - Apte, Anisha M. A1 - Poddar, Ajay K. A1 - Rudolph, Matthias A1 - Rohde, Ulrich L. T1 - A Novel Low Phase Noise X-Band Oscillator T2 - IEEE Microwave Magazine Y1 - 2015 U6 - https://doi.org/10.1109/MMM.2014.2367957 SN - 1527-3342 VL - 16 IS - 1 SP - 127 EP - 135 ER - TY - GEN A1 - Rudolph, Matthias A1 - Escotte, Laurent A1 - Dörner, Ralf T1 - Modeling Nonlinear White Noise in GaN HEMT Devices T2 - Frequenz Y1 - 2015 VL - 69 IS - 1-2 SP - 47 EP - 55 ER - TY - GEN A1 - Nosaeva, Ksenia A1 - Weimann, Nils A1 - Rudolph, Matthias A1 - John, Wilfred A1 - Krüger, Olaf A1 - Heinrich, Wolfgang T1 - Improved thermal management of InP transistors in transferred-substrate technology with diamond heat-spreading layer T2 - Electronics Letters Y1 - 2015 U6 - https://doi.org/10.1049/el.2015.1135 SN - 1350-911X VL - 51 IS - 13 SP - 1010 EP - 1012 ER - TY - GEN A1 - Nosaeva, Ksenia A1 - Weimann, Nils A1 - Rudolph, Matthias A1 - John, Wilfred A1 - Krüger, Olaf A1 - Heinrich, Wolfgang T1 - Thin ice: Diamond films could more than double the power output achievable with transistors in the ‘Terahertz gap’ by improving thermal management T2 - Electronics Letters Y1 - 2015 U6 - https://doi.org/10.1049/el.2015.1943 SN - 1350-911X VL - 51 IS - 13 SP - S. 959 ER - TY - GEN A1 - Nosaeva, Ksenia A1 - Al-Sawaf, Thualfiqa A1 - John, Wilfred A1 - Stoppel, Dimitri A1 - Rudolph, Matthias A1 - Schmückle, Franz-Josef A1 - Janke, Bernd A1 - Krüger, Olaf A1 - Krozer, Viktor A1 - Heinrich, Wolfgang A1 - Weimann, Nils T1 - Multifinger Indium Phosphide Double-Heterostructure Transistor Circuit Technology With Integrated Diamond Heat Sink Layer T2 - IEEE Transactions on Electron Devices Y1 - 2016 U6 - https://doi.org/10.1109/TED.2016.2533669 SN - 0018-9383 SN - 1557-9646 VL - 63 IS - 5 SP - 1846 EP - 1852 ER -