TY - GEN A1 - Kot, Małgorzata A1 - Kegelmann, Lukas A1 - Das, Chittaranjan A1 - Kus, Peter A1 - Tsud, Nataliya A1 - Matolínová, Iva A1 - Albrecht, Steve A1 - Matolin, Vladimir A1 - Schmeißer, Dieter T1 - Room temperature atomic layer deposited Al₂O₃ improves perovskite solar cells efficiency over time T2 - ChemSusChem N2 - Electrical characterisation of perovskite solar cells consisting of room-temperature atomic-layer-deposited aluminium oxide (RT-ALD-Al₂O₃) film on top of a methyl ammonium lead triiodide (CH₃NH₃PbI₃) absorber showed excellent stability of the power conversion efficiency (PCE) over along time. Under the same environmental conditions (for 355 d), the average PCE of solar cells without the ALD layer decreased from 13.6 to 9.6 %, whereas that of solar cells containing 9 ALD cycles of depositing RT-ALD-Al₂O₃on top of CH₃NH₃PbI₃ increased from 9.4 to 10.8 %. Spectromicroscopic investigations of the ALD/perovskite interface revealed that the maximum PCE with the ALD layer is obtained when the so-called perovskite cleaning process induced by ALD precursors is complete. The PCE enhancement over time is probably related to a self-healing process induced by the RT-ALD-Al₂O₃ film. This work may provide a new direction for further improving the long-term stability and performance of perovskite solar cells. KW - Perovskite Solar Cells (PSCs) KW - Atomic layer deposition (ALD) KW - long time stabilty KW - X-Ray photoelectron spectroscopy (XPS) KW - Field-emission scanning electron microscopy (FESEM) Y1 - 2018 U6 - https://doi.org/10.1002/cssc.201801434 SN - 1864-5631 SN - 1864-564X VL - 11 IS - 20 SP - 3640 EP - 3648 ER -