TY - GEN A1 - Tallarida, Massimo A1 - Adelmann, Christoph A1 - Delabie, Annelies A1 - Elshocht, Sven van A1 - Caymax, Matty A1 - Schmeißer, Dieter T1 - Surface chemistry and Fermi level movement during the self-cleaning of GaAs by trimethyl-aluminum T2 - Applied physics letters Y1 - 2011 U6 - https://doi.org/10.1063/1.3615784 SN - 1077-3118 VL - 99 IS - 4 SP - 042906-1 EP - 042906-3 ER - TY - GEN A1 - Tallarida, Massimo A1 - Weisheit, Martin A1 - Kolanek, Krzysztof A1 - Michling, Marcel A1 - Engelmann, Hans-Jürgen A1 - Schmeißer, Dieter T1 - Atomic layer deposition of nanolaminate oxide films on Si T2 - Journal of Nanoparticle Research Y1 - 2011 U6 - https://doi.org/10.1007/s11051-011-0319-x VL - 13 IS - 11 SP - 5975 EP - 5983 ER - TY - GEN A1 - Kolanek, Krzysztof A1 - Tallarida, Massimo A1 - Michling, Marcel A1 - Karavaev, Konstantin A1 - Schmeißer, Dieter T1 - Atomic layer deposition reactor for fabrication of metal oxides Y1 - 2011 ER - TY - GEN A1 - Tallarida, Massimo A1 - Kukli, Kaupo A1 - Michling, Marcel A1 - Ritala, Mikko A1 - Leskelä, Markku A1 - Schmeißer, Dieter T1 - Substrate Reactivity Effects in the Atomic Layer Deposition of Aluminum Oxide from Trimethylaluminum on Ruthenium T2 - Chemistry of Materials Y1 - 2011 SN - 0897-4756 VL - 23 IS - 13 SP - 3159 EP - 3168 ER - TY - GEN A1 - Tallarida, Massimo A1 - Friedrich, Daniel A1 - Städter, Matthias A1 - Michling, Marcel A1 - Schmeißer, Dieter T1 - Growth of TiO2 with Thermal and Plasma Enhanced Atomic Layer Deposition T2 - Journal of Nanoscience and Nanotechnology Y1 - 2011 SN - 1533-4880 VL - 11 IS - 9 SP - 8049 EP - 8053 ER - TY - GEN A1 - Kukli, Kaupo A1 - Kemell, Marianna A1 - Puukilainen, Esa A1 - Aarik, Jaan A1 - Aidla, Aleks A1 - Sajavaara, Timo A1 - Laitinen, Mikko A1 - Tallarida, Massimo A1 - Sundqvist, Jonas A1 - Ritala, Mikko A1 - Leskelä, Markku T1 - Atomic Layer Deposition of Ruthenium Films from (Ethylcyclopentadienyl)(pyrrolyl)ruthenium and Oxygen T2 - Journal of the Electrochemical Society N2 - Ru films were grown by atomic layer deposition in the temperature range of 275-350 degrees C using (ethylcyclopentadienyl)(pyrrolyl)ruthenium and air or oxygen as precursors on HF-etched Si, SiO(2), ZrO(2), and TiN substrates. Conformal growth was examined on three-dimensional silicon substrates with 20: 1 aspect ratio. ZrO(2) promoted the nucleation of Ru most efficiently compared to other substrates, but the films roughened quickly on ZrO(2) with increasing film thickness. The minimum number of cycles required to form continuous and conductive metal layers could be decreased by increasing the length of the oxygen pulse. In order to obtain well-conducting Ru films growth to thicknesses of at least 8-10 nm on any surface was necessary. Resistivities in the ranges of 30-60 and 14-16 mu Omega . cm were achieved for 4-6 and 10-15 nm thick films, respectively. Delamination became an issue in the Ru films grown to thicknesses about 10 nm and higher. KW - Atomic layer deposition (ALD) KW - Ruthenium Y1 - 2011 U6 - https://doi.org/10.1149/1.3533387 SN - 0013-4651 VL - 158 IS - 3 SP - D158 EP - D165 ER - TY - CHAP A1 - Michling, Marcel A1 - Kolanek, Krzysztof A1 - Schmeißer, Dieter A1 - Tallarida, Massimo T1 - A growth model for the HfO2 ALD process T2 - Verhandlungen der Deutschen Physikalischen Gesellschaft, Reihe 6, Bd. 46 N2 - In this contribution we report on our in-situ2 cycle-by-cycle (up to the 25 cycles) investigation of the HfO2 atomic layer deposition (ALD) process using the method of x-ray photoelectron spectroscopy (XPS) and electron energy loss spectroscopy (EELS). We used Tetrakis-Dimethyl-Amino-Hafnium (TDMA-Hf) and H2O as precursors and p-type Si wafer with native oxide as a substrate. The XPS measurements were carried out at BESSY II in Berlin with primary energies of 150 eV and 640 eV and the EELS measurements were done with a primary energy of 50 eV. We measured the O1s, Si2p core level and the valence band including the Hf 4f core level. From the Hf4f to Si2p ratios taken at each energy we developed a growth model for the first monolayer and for the following layers too. From our data we conclude, that in the first monolayer up to the fourth ALD cycle an island growth occurs. The height of these islands is about 0,5nm. After the first monolayer is completed, a layer- by-layer growth can be expected. In order to proof this observation we have simulated the Hf/Si ratio for different excitation energies and found a very good agreement with our measurement data. The EELS data especially the evaluation of the loss function onset confirm our growth model. Y1 - 2011 UR - http://www.dpg-verhandlungen.de/year/2011/conference/dresden/part/ds/session/12/contribution/1 SN - 0420-0195 SP - S. 294 PB - Deutsche Physikalische Gesellschaft CY - Bad Honnef ER - TY - CHAP A1 - Tallarida, Massimo A1 - Deßmann, Nils A1 - Städter, Matthias A1 - Friedrich, Daniel A1 - Michling, Marcel A1 - Schmeißer, Dieter T1 - Atomic layer deposition of TiO T2 - Verhandlungen der Deutschen Physikalischen Gesellschaft, Reihe 6, Bd. 46 N2 - We present a study of the initial growth of TiO2 on Si(111) by atomic layer deposition (ALD). The Si substrate was etched with NH4F before ALD to remove the native oxide film and to produce a Si-H termination. In−situ experiments by means of photoemission and X-ray absorption spectroscopy were conducted with synchrotron radiation on Ti-oxide films produced using Ti-tetra-iso-propoxide (TTIP) and water as precursors. O1s, Ti2p, C1s, and Si2p core level, and O1s and Ti2p absorption edges show the transition of the Ti-oxide properties during the first layers. The growth starts with a very small growth rate (0.03nm/cycle) due to the growth inhibition of the Si-H termination and proceeds with higher growth rate (0.1nm/cycle) after 1.5nm Ti-oxide has been deposited. Y1 - 2011 UR - http://www.dpg-verhandlungen.de/year/2011/conference/dresden/part/ds/session/12/contribution/2 SN - 0420-0195 PB - Deutsche Physikalische Gesellschaft CY - Bad Honnef ER -